Vishay LH1511BT 1 form b solid state relay Datasheet

LH1511BAB/ BABTR/ BT
VISHAY
Vishay Semiconductors
1 Form B Solid State Relay
DIP
SMD
Features
•
•
•
•
•
•
•
Isolation Test Voltage 3750 VRMS
Typical RON 10 Ω
Load Voltage 200 V
Linear, AC/DC Operation
Clean Bounce Free Switching
Low Power Consumption
SMD Lead Available on Tape and Reel
S DC
6
5
S'
S'
1
Agency Approvals
S'
4
2
3
i179031
• UL - File No. E52744
structed as a multi-chip hybrid device. Actuation
control is via an Infrared LED. The output switch is a
combination of a photodiode array with MOSFET
switches and control circuity. The relays can be configured for AC/DC or DC only operation.
• CSA - Certification 093751
• BSI
Applications
General Telecom Switching
Security Equipment
Instrumentation
Industrial Controls
Order Information
Part
LH1511BAB
Remarks
Gullwing, Tubes, SMD-6
Description
LH1511BABTR
Gullwing, Tape and Reel, SMD-6
The LH1511 relays are SPST normally closed
switches (1 Form B) that can replace electromechanical relays in many applications. The relays are con-
LH1511BT
Tubes, DIP-6
Absolute Maximum Ratings, Tamb = 25 °C
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Ratings for extended periods of time can adversely affect reliability.
SSR
Parameter
Test condition
LED continuous forward current
Symbol
Value
Unit
IF
50
mA
LED reverse voltage
IR ≤ 10 µA
VR
8.0
V
DC or peak AC load voltage
IL ≤ 50 µA
VL
200
V
Continuous DC load current bidirectional operation
IL
200
mA
Continuous DC load current unidirectional operation
IL
300
mA
mA
Peak load current (single shot)
IP
400
Ambient temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 125
°C
Document Number 83811
Rev. 1.2, 15-Mar-04
t = 100 ms
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1
LH1511BAB/ BABTR/ BT
VISHAY
Vishay Semiconductors
Symbol
Value
Pin soldering temperature
Parameter
t = 10 s max
Test condition
Tsld
260
°C
Input/output isolation voltage
VRMS t = 1.0 s, IISO = 10 µA max
VISO
3750
VRMS
Pdiss
550
mW
Output power dissipation
(continuous)
Unit
Electrical Characteristics, Tamb = 25 °C
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Input
Symbol
Min
Typ.
LED forward current, switch
turn-on
Parameter
IL = ± 200 mA, t = 10 ms
Test condition
IFon
0.2
0.9
LED forward current, switch
turn-off
VL = ± 150 V
IFoff
LED forward voltage
IF = 10 mA
VF
Symbol
Max
Unit
mA
1.0
2.0
mA
1.15
1.26
1.45
V
Min
Output
Typ.
Max
Unit
ON-resistance ac/dc :
Pin 4, 6 (+) to 5 (-)
Parameter
IF = 0 mA, IL = 50 mA
Test condition
RON
10
15
Ω
ON-resistance dc:
Pin 4, 6 (+) to 5 (-)
IF = 0 mA, IL = 100 mA
RON
2.5
3.75
Ω
Off-resistance
IF = 5.0 mA, VL = ± 100 V
ROFF
Off-state leakage current
IF = 5.0 mA, VL = ± 200 V
Output capacitance
IF = 5.0 mA, VL = 50 V
0.1
1.4
0.07
GΩ
1.0
50
nA
pf
Transfer
Parameter
Test condition
Capacitance (input-output)
Symbol
Min
Typ.
Max
Unit
VISO = 1.0 V
CIO
3.0
Turn-on time
IF = 10 mA, IL = 50 mA
ton
1.2
3.0
ms
Turn-off time
IF = 10 mA, IL = 50 mA
toff
1.0
3.0
ms
pF
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Fig. 1 Recommended Operating Conditions
LOAD CURRENT (mA)
150
5.0 mA
120
90
60
30
0
-40
-20
0
20
40
60
80
AMBIENT TEMPERATURE (°C)
ilh1511bt_00
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Document Number 83811
Rev. 1.2, 15-Mar-04
LH1511BAB/ BABTR/ BT
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
DIP
.330 (8.38)
.100 (2.54)
.250 (6.35)
.360 (9.14)
ISO Method A
.018 (.46)
6-.031 (6-.80) Dia. .100 (2.54)
.300 (7.62)
.130 (3.30)
.250 (6.35)
.360 (9.14) .285 (7.24)Typ.
.360 (9.14)
.200 (5.08)
i178015
Package Dimensions in Inches (mm)
SMD
.330 (8.38)
.100 (2.54)
.100 (2.54)
.250 (6.35)
.327 (8.31)
.375 (9.53)
.075 (1.90)
.018 (.46)
.059 (1.50)
.300 (7.62)
.175 (4.45)
ISO Method A
i178016
Document Number 83811
Rev. 1.2, 15-Mar-04
.130 (3.30)
.025 (.64)Typ.
.010 (.25)Typ.
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LH1511BAB/ BABTR/ BT
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83811
Rev. 1.2, 15-Mar-04
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