Diode Semiconductor Korea ERC25-04---ERC25-06 FAST RECOVERY RECT IFIER VOLT AGE RANGE: 400 --- 600 V CURRENT : 1.2 A FEATURES Low cos t Diffus ed junction Low leakage Low forward voltage drop DO - 15 High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol and s im ilar s olvents The plas tic m aterial carries U/L recognition 94V -0 MECHANICAL DATA Cas e:JEDEC DO-15,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces ,0.39 gram s Dimensions in millimeters Mounting pos ition: Any MAXIMUM RATINGS AND ELECT RICAL CHARACTERIST ICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. ERC25 - 04 ERC25 - 06 UNITS Maximum recurrent peak reverse voltage VRRM 400 600 V Maximum RMS voltage V R MS 280 420 V Maximum DC blocking voltage VDC 400 600 V Maximum average f orw ard rectif ied current 9.5mm lead length, @TA =75 IF (AV) 1.2 A IF SM 50.0 A VF 1.1 V Peak f orw ard surge current 8.3ms s ingle half -sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous f orw ard voltage @ 1.2 A Maximum revers e current at rated DC blocking v oltage @TA =25 @TA =100 IR 5.0 100.0 A Maximum revers e recovery time (Note1) t rr 400 ns Typical junction capacitance (Note2) CJ 18 pF Typical thermal resistance (Note3) Rθ JA 45 TJ -55----+150 TSTG -55----+150 Operating junction temperature range Storage temperature range /W N OTE:1. Measured with IF =0.5A, IR =1A, I rr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C . 3. Therm al resistance f rom junction to am bient. www.diode.kr ERC25-04---ERC25-06 Diode Semiconductor Korea FIG.1 -- REVERSE RECOVERY TINE CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 N.1. t rr 10 N.1. +0.5A D.U.T. ( - ) 0 (+) 50VDC (APPROX) (-) PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) 1 N.1. -0.25A ( + ) -1.0A 1cm NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O SET TIMEBASEFOR50/100 ns /cm FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES FIG.2 --TYPICAL FORWARD CHARACTERISTIC 10 2.0 TJ=25 Pulse Width=300uS 1.4 1.2 1.0 0.1 0.04 0 0.6 0.7 0.9 1.1 1.3 1.5 1.7 1.9 1 .4 1 .2 1 .0 0 .8 S ingle P hase H alf W a v e 6 0H z R es is tive o r In du ctiv e L oad 0 .6 0 .4 0 .2 0 0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS 40 20 10 TJ=25 f=1MHz 2 .4 1.0 2 4 10 REVERSE VOLTAGE,VOLTS 20 40 100 PEAK FORWARD SURGE CURRENT AMPERES JUNCTION CAPACITANCE,pF 60 .2 80 100 120 140 FIG.5--PEAK FORWARD SURGE CURRENT 100 1 .1 60 AMBIENT TEMPERATURE, FIG.4--TYPICAL JUNCTION CAPACITANCE 4 40 20 80 70 TJ =125 8.3ms Single Half Sine-Wave 60 50 40 30 20 10 0 1 2 4 8 10 20 40 60 80 100 NUMBER OF CYCLES AT 60 Hz www.diode.kr