CDIL BCW65B General purpose transistor Datasheet

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW65A, BCW65B
BCW65C
GENERAL PURPOSE TRANSISTOR
N–P–N transistor
Marking
BCW65A = EA
BCW65B = EB
BCW65C = EC
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation at Tamb = 25°C
D.C. current gain
–IC = 100 mA; –VCE = 10 V
65B
60
32
5
800
225
65C
60
32
5
800
225
35
50
80
IC = 10 mA; VCE = 1 V
min.
75
max. 220
110
180
IC = 100 mA; VCE = 1 V
min. 100
max. 250
160
400
250
630
IC = 500 mA; VCE = 2 V
min.
60
100
Continental Device India Limited
–V CBO
–V CEO
–V EBO
–IC
Ptot
BCW65A
max. 60
max. 32
max.
5
max. 800
max 225
hFE
min.
Data Sheet
35
V
V
V
mA
mW
Page 1 of 3
BCW65A, BCW65B
BCW65C
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
–V CBO
Collector–emitter voltage (open base)
–V CEO
Emitter–base voltage (open collector)
–V EBO
Collector current (d.c.)
–IC
Ptot
Total power dissipation at Tamb = 25°C
Storage temperature
Tstg
max. 60
max. 32
max.
5
max. 800
max 225
–55
60
60
32
32
5
5
800
800
225
225
to +150
V
V
V
mA
mW
°C
THERMAL CHARACTERISTICS
Tj = P (Rth j–t + Rth s–a) + Tamb
Thermal resistance
from junction to ambient
556
556
°C/mW
Rth j–a
556
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector–emitter breakdown voltage
–V(BR)CEO min.
32
–IC = 10 mA; IB = 0
Collector–base breakdown voltage
–V(BR)CES min.
60
–IC = 10 mA; VEB = 0
Emitter–base breakdown voltage
–V(BR)EBO min.
5
–IE = 10 mA; IC = 0
Collector cut–off current
–I CES
max. 20
–VCE = 32 V; IE = 0
Emitter cut–off current
IEBO
max. 20
VEB = 4 V; IC =0
Output capacitance at f = 1 MHz
Cc
max. 12
IE = 0; –VCB = 10 V
Input capacitance at f = 100 kHz
Ce
max. 80
IC = 0; –VEB = 0.5 V
32
32
V
60
60
V
5
5
V
20
20
nA
20
20
nA
12
12
pF
80
80
pF
Saturation voltages
–IC = 500 mA; –IB = 50 mA
–IC = 100 mA; –IB = 10 mA
–IC = 500 mA; –IB = 50 mA
Noise figure at RS = 1 kW
–IC = 0.2 mA; –VCE = 5 V
f = 1 KHz, BW = 200 Hz
–VCEsat
–VCEsat
–VBEsat
max.
typ.
max.
0.7
0.3
2
0.7
0.3
2
0.7 V
0.3 V
2 V
NF
max.
10
10
10
Current Gain-Band width Product
IC = 20 mA, VCE = 10V, f = 100 MHz
fT
min
100
100
100 MHz
Continental Device India Limited
Data Sheet
dB
Page 2 of 3
Notes
Disclaimer
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for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
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CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail [email protected]
www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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