Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain –IC = 100 mA; –VCE = 10 V 65B 60 32 5 800 225 65C 60 32 5 800 225 35 50 80 IC = 10 mA; VCE = 1 V min. 75 max. 220 110 180 IC = 100 mA; VCE = 1 V min. 100 max. 250 160 400 250 630 IC = 500 mA; VCE = 2 V min. 60 100 Continental Device India Limited –V CBO –V CEO –V EBO –IC Ptot BCW65A max. 60 max. 32 max. 5 max. 800 max 225 hFE min. Data Sheet 35 V V V mA mW Page 1 of 3 BCW65A, BCW65B BCW65C RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –V CBO Collector–emitter voltage (open base) –V CEO Emitter–base voltage (open collector) –V EBO Collector current (d.c.) –IC Ptot Total power dissipation at Tamb = 25°C Storage temperature Tstg max. 60 max. 32 max. 5 max. 800 max 225 –55 60 60 32 32 5 5 800 800 225 225 to +150 V V V mA mW °C THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient 556 556 °C/mW Rth j–a 556 CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –V(BR)CEO min. 32 –IC = 10 mA; IB = 0 Collector–base breakdown voltage –V(BR)CES min. 60 –IC = 10 mA; VEB = 0 Emitter–base breakdown voltage –V(BR)EBO min. 5 –IE = 10 mA; IC = 0 Collector cut–off current –I CES max. 20 –VCE = 32 V; IE = 0 Emitter cut–off current IEBO max. 20 VEB = 4 V; IC =0 Output capacitance at f = 1 MHz Cc max. 12 IE = 0; –VCB = 10 V Input capacitance at f = 100 kHz Ce max. 80 IC = 0; –VEB = 0.5 V 32 32 V 60 60 V 5 5 V 20 20 nA 20 20 nA 12 12 pF 80 80 pF Saturation voltages –IC = 500 mA; –IB = 50 mA –IC = 100 mA; –IB = 10 mA –IC = 500 mA; –IB = 50 mA Noise figure at RS = 1 kW –IC = 0.2 mA; –VCE = 5 V f = 1 KHz, BW = 200 Hz –VCEsat –VCEsat –VBEsat max. typ. max. 0.7 0.3 2 0.7 0.3 2 0.7 V 0.3 V 2 V NF max. 10 10 10 Current Gain-Band width Product IC = 20 mA, VCE = 10V, f = 100 MHz fT min 100 100 100 MHz Continental Device India Limited Data Sheet dB Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail [email protected] www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3