Freescale MRF7S19100NR1 Rf power field effect transistors n-channel enhancement-mode lateral mosfet Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF7S19100N
Rev. 3, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF7S19100NR1
MRF7S19100NBR1
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1000 mA, Pout = 29 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 17.5 dB
Drain Efficiency — 30%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 100 Watts CW
Peak Tuned Output Power
• Pout @ 1 dB Compression Point w 100 W CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Designed for Digital Predistortion Error Correction Systems
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
1930 - 1990 MHz, 29 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF7S19100NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF7S19100NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +200
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 82°C, 100 W CW
Case Temperature 79°C, 29 W CW
RθJC
0.57
0.68
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S19100NR1 MRF7S19100NBR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
500
nAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 320 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 1000 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3.2 Adc)
VDS(on)
0.2
0.24
0.4
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.54
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
553.5
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (2)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 29 W Avg., f1 = 1930 MHz,
f2 = 1990 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
16.5
17.5
19.5
dB
Drain Efficiency
ηD
28.5
30
—
%
PAR
5.7
6.1
—
dB
ACPR
—
- 38
- 36
dBc
IRL
—
- 12
- 10
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. VGG = 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S19100NR1 MRF7S19100NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 1000 mA, 1930 - 1990 MHz Bandwidth
Video Bandwidth @ 100 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
MHz
—
30
—
Gain Flatness in 60 MHz Bandwidth @ Pout = 29 W Avg.
GF
—
1
—
dB
Average Group Delay @ Pout = 100 W CW, f = 1960 MHz
Delay
—
2.15
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 100 W CW,
f = 1960 MHz, Six Sigma Window
ΔΦ
—
28.8
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.019
—
dB/°C
ΔP1dB
—
0.015
—
dBm/°C
Output Power Variation over Temperature
( - 30°C to +85°C)
MRF7S19100NR1 MRF7S19100NBR1
RF Device Data
Freescale Semiconductor
3
Z6
R1
VBIAS
VSUPPLY
+
C1
R2
C2
C3
C4
C5
C6
Z5
Z12
RF
INPUT
R3
Z1
Z2
Z3
Z7
Z8
Z9
Z10
Z4
RF
OUTPUT
Z11
C8
Z13
C7
DUT
VSUPPLY
C9
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.744″
0.383″
0.600″
0.505″
1.086″
0.452″
0.161″
x 0.084″
x 0.084″
x 0.230″
x 0.800″
x 0.080″
x 0.080″
x 0.880″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z8
Z9
Z10
Z11
Z12, Z13
PCB
C10
C11
0.319″ x 0.880″ Microstrip
0.390″ x 0.215″ Microstrip
0.627″ x 0.084″ Microstrip
0.743″ x 0.084″ Microstrip
1.326″ x 0.121″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, εr = 2.55
Figure 1. MRF7S19100NR1(NBR1) Test Circuit Schematic
Table 6. MRF7S19100NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
10 μF, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C2, C5, C6, C10, C11
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C3, C7
5.1 pF Chip Capacitors
ATC100B5R1BT500XT
ATC
C4, C9
8.2 pF Chip Capacitors
ATC100B8R2BT500XT
ATC
C8
10 pF Chip Capacitor
ATC100B100BT500XT
ATC
R1
1 KΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 KΩ, 1/4 W Chip Resistor
CRCW12061002FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF7S19100NR1 MRF7S19100NBR1
4
RF Device Data
Freescale Semiconductor
R2
C3
C4
R1
C1
C5
C6
C10
C11
C2
R3
C8
CUT OUT AREA
C7
MRF7S19100N/NB Rev. 1
C9
Figure 2. MRF7S19100NR1(NBR1) Test Circuit Component Layout
MRF7S19100NR1 MRF7S19100NBR1
RF Device Data
Freescale Semiconductor
5
18
Gps
32
17
ηD
31
16
14
30
VDD = 28 Vdc, Pout = 29 W (Avg.), IDQ = 1000 mA
29
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
−1.4
13
−1.5
15
IRL
12
−1.6
−10
−15
−20
−25
PARC
11
1880
1900
1920
1940
1960
1980
2000
−1.7
2040
2020
−30
IRL, INPUT RETURN LOSS (dB)
33
PARC (dB)
Gps, POWER GAIN (dB)
19
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
17
38
Gps
16
VDD = 28 Vdc, Pout = 47 W (Avg.), IDQ = 1000 mA
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
15
14
39
ηD
IRL
13
36
−10
−3
−15
−3.1
12
11
1880
37
−3.2
PARC
1900
1920
1940
1960
1980
2000
−20
−25
−3.3
2040
2020
−30
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
18
40
PARC (dB)
19
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 29 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 47 Watts Avg.
20
−10
Gps, POWER GAIN (dB)
19
18
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 1500 mA
1250 mA
1000 mA
750 mA
17
16
500 mA
15
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
IDQ = 500 mA
1500 mA
−40
1000 mA
−50
1250 mA
750 mA
−60
1
10
100
200
1
10
100
200
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S19100NR1 MRF7S19100NBR1
6
RF Device Data
Freescale Semiconductor
−10
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 1000 mA
f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
−40
3rd Order
−50
5th Order
−60
7th Order
−70
0
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−10
−20
IM3−U
−30
IM3−L
IM5−U
−40
IM5−L
IM7−U
−50
IM7−L
−60
1
10
100
200
1
10
TWO−TONE SPACING (MHz)
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
1
50
Ideal
0
45
−1
−2
100
40
−1 dB = 25 W
35
−2 dB = 35 W
−3
30
−3 dB = 47 W
−4
Actual
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
25
VDD = 28 Vdc, IDQ = 1000 mA
f = 1960 MHz, Input PAR = 7.5 dB
−5
20
20
30
40
50
60
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
60
−30_C
TC = −30_C
19
Gps
25_C
85_C
25_C
18
40
85_C
17
30
16
15
50
20
VDD = 28 Vdc
IDQ = 1000 mA
f = 1960 MHz
ηD
10
14
1
10
100
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
20
0
300
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF7S19100NR1 MRF7S19100NBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
19
108
IDQ = 1000 mA
f = 1960 MHz
MTTF (HOURS)
Gps, POWER GAIN (dB)
18
17
16
107
106
VDD = 32 V
15
24 V
28 V
14
0
40
80
120
160
105
90
200
110
Pout, OUTPUT POWER (WATTS) CW
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Power Gain versus Output Power
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 29 W Avg., and ηD = 30%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100
−10
3.84 MHz
Channel BW
−20
10
−40
Input Signal
−50
0.1
(dB)
PROBABILITY (%)
−30
1
−60
0.01
−70
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ "5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on
CCDF
0.001
0.0001
0
2
4
6
−80
−ACPR in 3.84 MHz
Integrated BW
−90
8
10
−ACPR in 3.84 MHz
Integrated BW
−100
PEAK−TO−AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−110
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 14. Single - Carrier W - CDMA Spectrum
MRF7S19100NR1 MRF7S19100NBR1
8
RF Device Data
Freescale Semiconductor
Zo = 5 Ω
f = 2040 MHz
f = 1880 MHz
Zsource
f = 2040 MHz
Zload
f = 1880 MHz
VDD = 28 Vdc, IDQ = 1000 mA, Pout = 29 W Avg.
f
MHz
Zsource
W
Zload
W
1880
4.257 - j2.758
2.143 - j3.408
1900
4.388 - j2.617
2.038 - j3.236
1920
4.521 - j2.560
1.944 - j3.066
1940
4.568 - j2.630
1.858 - j2.898
1960
4.424 - j2.758
1.775 - j2.725
1980
4.124 - j2.800
1.708 - j2.550
2000
3.819 - j2.611
1.643 - j2.387
2020
3.567 - j2.292
1.572 - j2.223
2040
3.525 - j1.844
1.487 - j2.029
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF7S19100NR1 MRF7S19100NBR1
RF Device Data
Freescale Semiconductor
9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
62
62
Ideal
58
P3dB = 51.61 dBm (144.90 W)
56
P1dB = 50.39 dBm
(109.50 W)
54
Actual
52
50
VDD = 28 Vdc, IDQ = 1000 mA
Pulsed CW, 12 μsec(on),
10% Duty Cycle, f = 1960 MHz
48
P6dB = 52.81 dBm (190.80 W)
60
P6dB = 52.12 dBm (162.60 W)
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
60
58
P3dB = 52.20 dBm (165.90 W)
56
P1dB = 50.94 dBm
(124.20 W)
54
Actual
52
50
VDD = 32 Vdc, IDQ = 1000 mA
Pulsed CW, 12 μsec(on),
10% Duty Cycle, f = 1960 MHz
48
46
46
30
32
34
36
38
40
42
44
46
30
32
Pin, INPUT POWER (dBm)
34
36
38
40
42
44
46
Pin, INPUT POWER (dBm)
NOTE: Measured in a Peak Tuned Load Pull Fixture
NOTE: Measured in a Peak Tuned Load Pull Fixture
Test Impedances per Compression Level
P3dB
Ideal
Zsource
Ω
Zload
Ω
4.39 - j5.66
1.81 - j3.27
Figure 16. Pulsed CW Output Power
versus Input Power
Test Impedances per Compression Level
P3dB
Zsource
Ω
Zload
Ω
4.39 - j5.66
1.81 - j3.27
Figure 17. Pulsed CW Output Power
versus Input Power
MRF7S19100NR1 MRF7S19100NBR1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF7S19100NR1 MRF7S19100NBR1
RF Device Data
Freescale Semiconductor
11
MRF7S19100NR1 MRF7S19100NBR1
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RF Device Data
Freescale Semiconductor
MRF7S19100NR1 MRF7S19100NBR1
RF Device Data
Freescale Semiconductor
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MRF7S19100NR1 MRF7S19100NBR1
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RF Device Data
Freescale Semiconductor
MRF7S19100NR1 MRF7S19100NBR1
RF Device Data
Freescale Semiconductor
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MRF7S19100NR1 MRF7S19100NBR1
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RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
3
Jan. 2008
Description
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
• Updated Typical Performance table to provide better definition of characterization attributes, p. 3
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 4
• Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
• Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to better match the
device’s capabilities, p. 7
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 8
• Updated Fig. 13, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test
Signal, to better represent production test signal, p. 8
• Replaced Case Outline 1486 - 03, Issue C, with 1486 - 03, Issue D, p.11 - 13. Added pin numbers 1 through 4
on Sheet 1.
• Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue E, p. 14 - 16. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
• Added Product Documentation and Revision History, p. 17
MRF7S19100NR1 MRF7S19100NBR1
RF Device Data
Freescale Semiconductor
17
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claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2006, 2008. All rights reserved.
MRF7S19100NR1 MRF7S19100NBR1
Document Number: MRF7S19100N
Rev. 3, 12/2008
18
RF Device Data
Freescale Semiconductor
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