Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 29 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 17.5 dB Drain Efficiency — 30% Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 100 Watts CW Peak Tuned Output Power • Pout @ 1 dB Compression Point w 100 W CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Designed for Digital Predistortion Error Correction Systems • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 1930 - 1990 MHz, 29 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF7S19100NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF7S19100NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +200 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 82°C, 100 W CW Case Temperature 79°C, 29 W CW RθJC 0.57 0.68 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF7S19100NR1 MRF7S19100NBR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 500 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 320 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1000 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3.2 Adc) VDS(on) 0.2 0.24 0.4 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.54 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 553.5 — pF Off Characteristics On Characteristics Dynamic Characteristics (2) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 29 W Avg., f1 = 1930 MHz, f2 = 1990 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 16.5 17.5 19.5 dB Drain Efficiency ηD 28.5 30 — % PAR 5.7 6.1 — dB ACPR — - 38 - 36 dBc IRL — - 12 - 10 dB Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. VGG = 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF7S19100NR1 MRF7S19100NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 1000 mA, 1930 - 1990 MHz Bandwidth Video Bandwidth @ 100 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) VBW MHz — 30 — Gain Flatness in 60 MHz Bandwidth @ Pout = 29 W Avg. GF — 1 — dB Average Group Delay @ Pout = 100 W CW, f = 1960 MHz Delay — 2.15 — ns Part - to - Part Insertion Phase Variation @ Pout = 100 W CW, f = 1960 MHz, Six Sigma Window ΔΦ — 28.8 — ° Gain Variation over Temperature ( - 30°C to +85°C) ΔG — 0.019 — dB/°C ΔP1dB — 0.015 — dBm/°C Output Power Variation over Temperature ( - 30°C to +85°C) MRF7S19100NR1 MRF7S19100NBR1 RF Device Data Freescale Semiconductor 3 Z6 R1 VBIAS VSUPPLY + C1 R2 C2 C3 C4 C5 C6 Z5 Z12 RF INPUT R3 Z1 Z2 Z3 Z7 Z8 Z9 Z10 Z4 RF OUTPUT Z11 C8 Z13 C7 DUT VSUPPLY C9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.744″ 0.383″ 0.600″ 0.505″ 1.086″ 0.452″ 0.161″ x 0.084″ x 0.084″ x 0.230″ x 0.800″ x 0.080″ x 0.080″ x 0.880″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z8 Z9 Z10 Z11 Z12, Z13 PCB C10 C11 0.319″ x 0.880″ Microstrip 0.390″ x 0.215″ Microstrip 0.627″ x 0.084″ Microstrip 0.743″ x 0.084″ Microstrip 1.326″ x 0.121″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, εr = 2.55 Figure 1. MRF7S19100NR1(NBR1) Test Circuit Schematic Table 6. MRF7S19100NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 10 μF, 35 V Tantalum Capacitor T491D106K035AT Kemet C2, C5, C6, C10, C11 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C3, C7 5.1 pF Chip Capacitors ATC100B5R1BT500XT ATC C4, C9 8.2 pF Chip Capacitors ATC100B8R2BT500XT ATC C8 10 pF Chip Capacitor ATC100B100BT500XT ATC R1 1 KΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R2 10 KΩ, 1/4 W Chip Resistor CRCW12061002FKEA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay MRF7S19100NR1 MRF7S19100NBR1 4 RF Device Data Freescale Semiconductor R2 C3 C4 R1 C1 C5 C6 C10 C11 C2 R3 C8 CUT OUT AREA C7 MRF7S19100N/NB Rev. 1 C9 Figure 2. MRF7S19100NR1(NBR1) Test Circuit Component Layout MRF7S19100NR1 MRF7S19100NBR1 RF Device Data Freescale Semiconductor 5 18 Gps 32 17 ηD 31 16 14 30 VDD = 28 Vdc, Pout = 29 W (Avg.), IDQ = 1000 mA 29 Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF) −1.4 13 −1.5 15 IRL 12 −1.6 −10 −15 −20 −25 PARC 11 1880 1900 1920 1940 1960 1980 2000 −1.7 2040 2020 −30 IRL, INPUT RETURN LOSS (dB) 33 PARC (dB) Gps, POWER GAIN (dB) 19 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) 17 38 Gps 16 VDD = 28 Vdc, Pout = 47 W (Avg.), IDQ = 1000 mA Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF) 15 14 39 ηD IRL 13 36 −10 −3 −15 −3.1 12 11 1880 37 −3.2 PARC 1900 1920 1940 1960 1980 2000 −20 −25 −3.3 2040 2020 −30 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 18 40 PARC (dB) 19 ηD, DRAIN EFFICIENCY (%) Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 29 Watts Avg. f, FREQUENCY (MHz) Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 47 Watts Avg. 20 −10 Gps, POWER GAIN (dB) 19 18 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1500 mA 1250 mA 1000 mA 750 mA 17 16 500 mA 15 VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz Two−Tone Measurements, 10 MHz Tone Spacing VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz Two−Tone Measurements, 10 MHz Tone Spacing −20 −30 IDQ = 500 mA 1500 mA −40 1000 mA −50 1250 mA 750 mA −60 1 10 100 200 1 10 100 200 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF7S19100NR1 MRF7S19100NBR1 6 RF Device Data Freescale Semiconductor −10 IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, IDQ = 1000 mA f1 = 1955 MHz, f2 = 1965 MHz Two−Tone Measurements, 10 MHz Tone Spacing −20 −30 −40 3rd Order −50 5th Order −60 7th Order −70 0 VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz −10 −20 IM3−U −30 IM3−L IM5−U −40 IM5−L IM7−U −50 IM7−L −60 1 10 100 200 1 10 TWO−TONE SPACING (MHz) Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (dB) 1 50 Ideal 0 45 −1 −2 100 40 −1 dB = 25 W 35 −2 dB = 35 W −3 30 −3 dB = 47 W −4 Actual ηD, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 25 VDD = 28 Vdc, IDQ = 1000 mA f = 1960 MHz, Input PAR = 7.5 dB −5 20 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power 60 −30_C TC = −30_C 19 Gps 25_C 85_C 25_C 18 40 85_C 17 30 16 15 50 20 VDD = 28 Vdc IDQ = 1000 mA f = 1960 MHz ηD 10 14 1 10 100 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 20 0 300 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF7S19100NR1 MRF7S19100NBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 19 108 IDQ = 1000 mA f = 1960 MHz MTTF (HOURS) Gps, POWER GAIN (dB) 18 17 16 107 106 VDD = 32 V 15 24 V 28 V 14 0 40 80 120 160 105 90 200 110 Pout, OUTPUT POWER (WATTS) CW 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) Figure 11. Power Gain versus Output Power This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 29 W Avg., and ηD = 30%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF Factor versus Junction Temperature W - CDMA TEST SIGNAL 100 −10 3.84 MHz Channel BW −20 10 −40 Input Signal −50 0.1 (dB) PROBABILITY (%) −30 1 −60 0.01 −70 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 0 2 4 6 −80 −ACPR in 3.84 MHz Integrated BW −90 8 10 −ACPR in 3.84 MHz Integrated BW −100 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal −110 −9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 14. Single - Carrier W - CDMA Spectrum MRF7S19100NR1 MRF7S19100NBR1 8 RF Device Data Freescale Semiconductor Zo = 5 Ω f = 2040 MHz f = 1880 MHz Zsource f = 2040 MHz Zload f = 1880 MHz VDD = 28 Vdc, IDQ = 1000 mA, Pout = 29 W Avg. f MHz Zsource W Zload W 1880 4.257 - j2.758 2.143 - j3.408 1900 4.388 - j2.617 2.038 - j3.236 1920 4.521 - j2.560 1.944 - j3.066 1940 4.568 - j2.630 1.858 - j2.898 1960 4.424 - j2.758 1.775 - j2.725 1980 4.124 - j2.800 1.708 - j2.550 2000 3.819 - j2.611 1.643 - j2.387 2020 3.567 - j2.292 1.572 - j2.223 2040 3.525 - j1.844 1.487 - j2.029 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF7S19100NR1 MRF7S19100NBR1 RF Device Data Freescale Semiconductor 9 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 62 62 Ideal 58 P3dB = 51.61 dBm (144.90 W) 56 P1dB = 50.39 dBm (109.50 W) 54 Actual 52 50 VDD = 28 Vdc, IDQ = 1000 mA Pulsed CW, 12 μsec(on), 10% Duty Cycle, f = 1960 MHz 48 P6dB = 52.81 dBm (190.80 W) 60 P6dB = 52.12 dBm (162.60 W) Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) 60 58 P3dB = 52.20 dBm (165.90 W) 56 P1dB = 50.94 dBm (124.20 W) 54 Actual 52 50 VDD = 32 Vdc, IDQ = 1000 mA Pulsed CW, 12 μsec(on), 10% Duty Cycle, f = 1960 MHz 48 46 46 30 32 34 36 38 40 42 44 46 30 32 Pin, INPUT POWER (dBm) 34 36 38 40 42 44 46 Pin, INPUT POWER (dBm) NOTE: Measured in a Peak Tuned Load Pull Fixture NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level P3dB Ideal Zsource Ω Zload Ω 4.39 - j5.66 1.81 - j3.27 Figure 16. Pulsed CW Output Power versus Input Power Test Impedances per Compression Level P3dB Zsource Ω Zload Ω 4.39 - j5.66 1.81 - j3.27 Figure 17. Pulsed CW Output Power versus Input Power MRF7S19100NR1 MRF7S19100NBR1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7S19100NR1 MRF7S19100NBR1 RF Device Data Freescale Semiconductor 11 MRF7S19100NR1 MRF7S19100NBR1 12 RF Device Data Freescale Semiconductor MRF7S19100NR1 MRF7S19100NBR1 RF Device Data Freescale Semiconductor 13 MRF7S19100NR1 MRF7S19100NBR1 14 RF Device Data Freescale Semiconductor MRF7S19100NR1 MRF7S19100NBR1 RF Device Data Freescale Semiconductor 15 MRF7S19100NR1 MRF7S19100NBR1 16 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 3 Jan. 2008 Description • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2 • Updated Typical Performance table to provide better definition of characterization attributes, p. 3 • Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 4 • Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part numbers, p. 4 • Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to better match the device’s capabilities, p. 7 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 8 • Updated Fig. 13, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal, to better represent production test signal, p. 8 • Replaced Case Outline 1486 - 03, Issue C, with 1486 - 03, Issue D, p.11 - 13. Added pin numbers 1 through 4 on Sheet 1. • Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue E, p. 14 - 16. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. • Added Product Documentation and Revision History, p. 17 MRF7S19100NR1 MRF7S19100NBR1 RF Device Data Freescale Semiconductor 17 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. MRF7S19100NR1 MRF7S19100NBR1 Document Number: MRF7S19100N Rev. 3, 12/2008 18 RF Device Data Freescale Semiconductor