PD - 97432
IRLML2030TRPbF
HEXFET® Power MOSFET
VDS
VGS Max
30
± 20
V
V
RDS(on) max
100
m
:
154
m
:
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
G 1
3 D
S
Micro3TM (SOT-23)
IRLML2030TRPbF
2
Application(s)
• Load/ System Switch
Features and Benefits
Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1
Multi-vendor compatibility
Easier manufacturing
Environmentally friendly
Increased reliability
results in
⇒
Absolute Maximum Ratings
Symbol
Max.
Units
Drain-Source Voltage
30
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
2.7
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
2.2
IDM
Pulsed Drain Current
11
PD @TA = 25°C
Maximum Power Dissipation
1.3
PD @TA = 70°C
Maximum Power Dissipation
0.8
VDS
Parameter
A
W
Linear Derating Factor
0.01
W/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Symbol
Parameter
e
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (t<10s)
f
Typ.
Max.
–––
100
–––
99
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
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1
11/4/09
IRLML2030TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Min. Typ. Max. Units
30
–––
–––
–––
0.03
–––
–––
123
154
–––
80
100
1.3
1.7
2.3
–––
–––
1
V
Conditions
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
mΩ
V
μA
d
= 2.7A d
VGS = 4.5V, ID = 2.2A
VGS = 10V, ID
VDS = VGS, ID = 25μA
VDS =24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
7.6
–––
Ω
gfs
Forward Transconductance
2.6
–––
–––
S
VDS = 10V, ID = 2.7A
Qg
Total Gate Charge
–––
1.0
–––
Qgs
Gate-to-Source Charge
–––
0.34
–––
nC
VDS =15V
Qgd
Gate-to-Drain ("Miller") Charge
–––
0.34
–––
VGS = 4.5V
td(on)
Turn-On Delay Time
–––
4.1
–––
VDD =15V
tr
Rise Time
–––
3.3
–––
td(off)
Turn-Off Delay Time
–––
4.5
–––
tf
Fall Time
–––
2.9
–––
VGS = 4.5V
Ciss
Input Capacitance
–––
110
–––
VGS = 0V
Coss
Output Capacitance
–––
29
–––
Crss
Reverse Transfer Capacitance
–––
12
–––
IGSS
nA
VGS = 20V
VGS = -20V
ID = 2.7A
ns
pF
d
d
ID = 1.0A
RG = 6.8Ω
VDS = 15V
ƒ = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
c
(Body Diode)
Min. Typ. Max. Units
–––
–––
1.6
A
–––
–––
11
–––
–––
1.0
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Diode Forward Voltage
trr
Reverse Recovery Time
–––
9.0
14
ns
TJ = 25°C, VR = 15V, IF=2.7A
Qrr
Reverse Recovery Charge
–––
0.3
0.4
nC
di/dt = 100A/μs
2
V
TJ = 25°C, IS = 2.7A, VGS = 0V
VSD
d
d
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IRLML2030TRPbF
100
100
TOP
10
BOTTOM
≤60μs PULSE WIDTH
Tj = 150°C
VGS
10.0V
8.00V
4.50V
3.50V
3.25V
3.00V
2.50V
2.25V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
≤60μs PULSE WIDTH
Tj = 25°C
1
0.1
10
BOTTOM
2.25V
0.1
0.01
0.1
1
10
0.1
100
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
10
TJ = 150°C
TJ = 25°C
0.1
VDS = 15V
≤60μs PULSE WIDTH
0.01
RDS(on) , Drain-to-Source On Resistance
(Normalized)
100
ID, Drain-to-Source Current(A)
VGS
10.0V
8.00V
4.50V
3.50V
3.25V
3.00V
2.50V
2.25V
1
2.25V
1
TOP
ID = 2.7A
VGS = 10V
1.5
1.0
0.5
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLML2030TRPbF
1000
12.0
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
VGS, Gate-to-Source Voltage (V)
ID= 2.7A
C, Capacitance (pF)
Coss = Cds + Cgd
Ciss
100
Coss
Crss
10
10.0
VDS = 24V
VDS = 15V
8.0
6.0
4.0
2.0
0.0
1
10
100
0.0
0.5
VDS , Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
TJ = 150°C
1
TJ = 25°C
VGS = 0V
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2.5
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
100μsec
1msec
1
10msec
0.1
TA = 25°C
Tj = 150°C
Single Pulse
0.01
0.0
0.4
2.0
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.2
1.5
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0
1.0
1.2
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLML2030TRPbF
3.0
RD
V DS
ID , Drain Current (A)
2.5
VGS
D.U.T.
RG
2.0
+
- VDD
VGS
1.5
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
VDS
0.0
90%
25
50
75
100
125
150
TA , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( ZthJA )
1000
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
300
( Ω)
RDS(on), Drain-to -Source On Resistance m
RDS(on), Drain-to -Source On Resistance (mΩ)
IRLML2030TRPbF
ID = 2.7A
260
220
180
140
TJ = 125°C
100
60
TJ = 25°C
20
2
4
6
8
10
12
14
16
18
20
150
Vgs = 4.5V
100
Vgs = 10V
50
0
2
4
6
8
10
12
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Id
Vds
Vgs
L
Vgs(th)
Qgodr
Qgd
0
20K
1K
VCC
S
Qgs2 Qgs1
Fig 14a. Basic Gate Charge Waveform
6
DUT
Fig 14b. Gate Charge Test Circuit
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IRLML2030TRPbF
100
80
2.0
Power (W)
VGS(th), Gate threshold Voltage (V)
2.5
1.5
ID = 25uA
60
40
ID = 250uA
1.0
20
0
0.5
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
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1E-005 0.0001
0.001
0.01
0.1
1
10
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRLML2030TRPbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
6
5
SYMBOL
D
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
A
A2
3
6
C
E
E1
1
2
0.15 [0.006] M C B A
0.10 [0.004] C
A1
5
B
MILLIMETERS
3X b
e
0.20 [0.008] M C B A
NOTES:
e1
H 4
L1
Recommended Footprint
c
L2
0.972
0.950
0.802
INCHES
MIN
MAX
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MAX
0.0004 %6&
%6&
REF
BSC
0
8
2.742
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
3X L
7
1.900
Micro3 (SOT-23/TO-236AB) Part Marking Information
Notes : T his part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECEDE D BY LAST DIGIT OF CALENDAR YE AR
PART NUMBE R
Y = YEAR
W = WEEK
LOT
CODE
PART NUMBER CODE REF ERENCE:
A = IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
I = IRLML0030
J = IRLML2030
K = IRLML0100
L = IRLML0060
M = IRLML0040
Note: A line above the work week
(as shown here) indicates Lead - Free.
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
WORK
WEE K
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LET TER
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
WORK
WEE K
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRLML2030TRPbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
IRLML2030TRPbF
Orderable part number
Package Type
IRLML2030TRPbF
Micro3
Standard Pack
Form
Quantity
Tape and Reel
3000
Note
Qualification information†
Qualification level
Moisture Sensitivity Level
Cons umer
(per JE DE C JE S D47F
Micro3
RoHS compliant
††
†††
guidelines )
MS L1
†††
(per IPC/JE DE C J-S T D-020D
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/2009
10
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