APTGF25H120T3G Full - Bridge NPT IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 19 Q2 22 7 23 8 CR2 26 Q3 11 10 CR4 Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Q4 4 27 3 29 31 30 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 40 25 100 ±20 208 Tj = 125°C 50A@1150V TC = 25°C TC = 80°C TC = 25°C Unit V July, 2006 CR3 CR1 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGF25H120T3G – Rev 1 Q1 18 VCES = 1200V IC = 25A @ Tc = 80°C APTGF25H120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Tj = 25°C Tj = 125°C T VGE =15V j = 25°C IC = 25A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM Min Test Conditions IF Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Typ 1650 250 110 160 10 70 60 50 305 Max 250 500 3.7 IF = 25A VGE = 0V IF = 25A VR = 600V di/dt =1000A/µs www.microsemi.com µA V 6 400 V nA Max Unit pF nC ns 60 50 346 ns 40 3.5 mJ 1.5 Typ Max 1200 VR=1200V Unit 30 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 3.2 4.0 4 Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 25A R G = 22Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 25A R G = 22Ω VGE = 15V Tj = 125°C VBus = 400V IC = 25A Tj = 125°C R G = 22Ω Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time 2.5 VGE = 15V VBus = 300V IC =25A Fall Time Tf Typ VGE = 0V VCE = 1200V Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Min Unit V Tj = 25°C Tj = 125°C 100 250 Tc = 80°C Tj = 25°C Tj = 125°C 25 2.1 1.9 Tj = 25°C 95 Tj = 125°C 190 Tj = 25°C 2.1 Tj = 125°C Tj = 25°C Tj = 125°C 4.5 0.75 1.5 µA A V July, 2006 ICES Test Conditions ns µC mJ 2-6 APTGF25H120T3G – Rev 1 Symbol Characteristic APTGF25H120T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.6 1.2 Unit T: Thermistor temperature Thermal and package characteristics VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Symbol Characteristic RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 110 °C N.m g 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGF25H120T3G – Rev 1 28 17 1 July, 2006 SP3 Package outline (dimensions in mm) APTGF25H120T3G Typical Performance Curve Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 70 TJ=25°C 60 50 TJ=125°C 40 30 20 10 16 TJ=25°C 12 8 TJ=125°C 4 1 2 3 4 5 6 7 VCE, Collector to Emitter Voltage (V) 0 8 VGE, Gate to Emitter Voltage (V) Transfer Characteristics 120 250µs Pulse Test < 0.5% Duty cycle 100 80 60 40 TJ=125°C 20 T J=25°C 0 2.5 5 7.5 10 12.5 VGE, Gate to Emitter Voltage (V) TJ = 125°C 250µs Pulse Test < 0.5% Duty cycle 8 7 Ic=50A 6 5 Ic=25A 4 3 2 Ic=12.5A 1 0 9 10 11 12 13 14 2 IC = 25A 16 2.5 3 3.5 V CE =240V TJ = 25°C V CE=600V 14 12 10 V CE =960V 8 6 4 2 0 0 15 16 6 30 60 90 120 150 180 On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 5 3 Ic=12.5A 2 1 0 -50 60 Ic, DC Collector Current (A) 1.05 1.00 0.95 0.90 0.85 0.80 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 50 40 30 July, 2006 Breakdown Voltage vs Junction Temp. 1.10 Ic=50A Ic=25A 4 VGE, Gate to Emitter Voltage (V) Collector to Emitter Breakdown Voltage (Normalized) 1.5 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. 9 1 Gate Charge 18 15 VCE, Collector to Emitter Voltage (V) 0 0.5 VCE, Collector to Emitter Voltage (V) 20 10 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 www.microsemi.com -50 -25 0 25 50 75 100 TC, Case Temperature (°C) 125 150 4-6 APTGF25H120T3G – Rev 1 0 Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle 0 0 VCE, Collector to Emitter Voltage (V) Output Characteristics (VGE=10V) 20 Ic, Collector Current (A) Ic, Collector Current (A) 80 APTGF25H120T3G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) V CE = 600V RG = 22Ω 70 65 V GE = 15V 60 55 50 5 15 25 35 45 400 V GE=15V, TJ=125°C 350 300 250 200 55 5 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current V CE = 600V RG = 22Ω 120 45 tf, Fall Time (ns) tr, Rise Time (ns) 35 45 55 Current Fall Time vs Collector Current 80 V GE=15V 40 0 5 T J = 125°C 40 35 TJ = 25°C 30 15 25 35 45 V CE = 600V, VGE = 15V, RG = 22Ω 20 55 5 ICE, Collector to Emitter Current (A) V CE = 600V R G = 22Ω 8 TJ=125°C, V GE=15V 6 TJ=25°C, V GE =15V 4 2 0 55 4 V CE = 600V V GE = 15V RG = 22Ω 3 TJ = 125°C 2 TJ = 25°C 1 0 5 15 25 35 45 ICE, Collector to Emitter Current (A) 55 5 Switching Energy Losses vs Gate Resistance 15 25 35 45 ICE, Collector to Emitter Current (A) 55 Reverse Bias Safe Operating Area 60 IC, Collector Current (A) Eon, 25A 3 Eoff, 25A 2 1 0 50 40 30 20 July, 2006 VCE = 600V VGE = 15V T J= 125°C 4 15 25 35 45 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 10 Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 25 50 25 Switching Energy Losses (mJ) 15 ICE, Collector to Emitter Current (A) 160 5 V GE=15V, TJ=25°C V CE = 600V R G = 22Ω 10 0 0 10 20 30 40 50 60 Gate Resistance (Ohms) 0 400 800 1200 VCE, Collector to Emitter Voltage (V) www.microsemi.com 5-6 APTGF25H120T3G – Rev 1 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 75 APTGF25H120T3G Fmax, Operating Frequency (kHz) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 Cies 1000 Coes 100 Cres 10 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) Thermal Impedance (°C/W) 0.5 100 80 ZVS VCE = 600V D = 50% RG = 22Ω TJ = 125°C TC= 75°C 60 40 Hard switching ZCS 20 50 0 0 10 20 30 IC, Collector Current (A) 40 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 Operating Frequency vs Collector Current 120 0.9 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGF25H120T3G – Rev 1 July, 2006 Rectangular Pulse Duration (Seconds)