BWTECH BW3402 N-channel enhancement-mode mosfet Datasheet

BW3402
N-Channel Enhancement-Mode
MOSFETs
Mechanical Data
• Case: SOT-23 Molded plastic
• Epoxy: UL94V-O rate flame retardant
• RoHS compliant package
Packing & Order Information
3,000/Reel
Graphic symbol
Publication Order Number: [BW3402]
© Bruckewell Technology Corporation Rev. A -2014
BW3402
N-Channel Enhancement-Mode
MOSFETs
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings (Tc=25°C unless otherwise noted)
Parameter
Symbol
BW3402
Unit
Drain-Source Voltage
BVDSS
30
V
Gate- Source Voltage
VGS
12
V
ID
4.6
A
Drain Current (pulsed)
IDM
16
A
Thermal resistance,junction to ambient air
PD
1380
mW
Junction
TJ
150
°C
TSTG
-55 to +150
°C
Drain Current (continuous)
Storage Temperature
Maximum Ratings (Tc=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Breakdown Voltage (ID = 250uA,VGS = 0 V)
BVDSS
Gate Threshold Voltage (ID = 250uA,VGS = VDS)
VGS(th)
Diode Forward Voltage Drop (IS = 1 A,VGS = 0 V)
VSD
Min
Typ.
Max.
Units
30
--
V
0.7
18
V
--
1
V
Zero Gate Voltage Drain Current
(VGS=0V, VDS= 24V)
1
IDSS
5
(VGS=0V, VDS= 24V, TA=55°C)
Maximum Ratings (Tc=25°C unless otherwise noted)
Parameter
Symbol
Gate Body Leakage (VGS =+12 V, VDS = 0 V)
IGSS
RDS(ON)
Static Drain-Source On-State Resistance
(ID = 4.6 A,VGS = 10 V)
Static Drain-Source On-State Resistance
(ID = 4 A,VGS = 4.5 V)
Min
Typ.
uA
Max.
Units
--
+/-100
nA
--
30
mΩ
--
50
mΩ
100
pF
Static Drain-Source On-State Resistance
(ID = 1 A,VGS = 2.5 V)
Input Capacitance (VGS = 0 V, VDS = 15 V,f = 1MHz)
CISS
954
--
pF
Output Capacitance (VGS = 0 V, VDS = 15 V,f = 1MHz)
COSS
115
--
pF
Turn-ON Time (VDS = 15 V, VGS = 10 V, RGEN = 6 Ω)
t(on)
6.3
--
ns
Turn-OFF Time (VDS = 15 V, VGS = 10 V, RGEN = 6 Ω)
t(off)
38.2
--
ns
--
Pulse Width<300μs; Duty Cycle<2.0%
Publication Order Number: [BW3402]
© Bruckewell Technology Corporation Rev. A -2014
BW3402
N-Channel Enhancement-Mode
MOSFETs
■Characteristics Curve
FIG.1-On-Region Characteristics
FIG.2-Transfer Characteristics
FIG.3-On-Resistance vs. Drain Current and Gate
FIG.4-On-Resistance vs. Junction Temperature
Voltage
Publication Order Number: [BW3402]
© Bruckewell Technology Corporation Rev. A -2014
BW3402
N-Channel Enhancement-Mode
MOSFETs
■Characteristics Curves
FIG.5-On-Resistance vs. Gate-Source Voltage
FIG.6-Body-Diode Characteristics
FIG.7-Gate-Charge Characteristics
FIG.8-Capacitance Characteristics
Publication Order Number: [BW3402]
© Bruckewell Technology Corporation Rev. A -2014
BW3402
N-Channel Enhancement-Mode
MOSFETs
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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generic applications.
Such statements are not binding statements about the suitability of products for a particular
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described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [BW3402]
© Bruckewell Technology Corporation Rev. A -2014
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