EMLSI EM743FV8AU-55L 512k x8 bit super low power and low voltage full cmos static ram Datasheet

merging Memory & Logic Solutions Inc.
EM641FV8FT Series
Low Power, 512Kx8 SRAM
Document Title
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
History
0.0
Initial Draft
0.1
2’nd Draft
Draft Date
May 25 , 2003
Add Pb-free part number
Remark
Preliminary
February 13 , 2004
Emerging Memory & Logic Solutions Inc.
IT Venture Tower Eastside 11F, 78, Karac-Dong, Songpa-Ku, Seoul, Rep.of Korea Zip Code : 138-160
Tel : +82-2-2142-1759~1766 Fax : +82-2-2142-1769 / Homepage : www.emlsi.com
The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
EM641FV8FT Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
FEATURES
GENERAL DESCRIPTION
•
•
•
•
•
•
The EM641FV8FT families are fabricated by EMLSI’s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale
Package for user flexibility of system design. The families also supports low data retention voltage for battery
back-up operation with low data retention current.
Process Technology : 0.18µm Full CMOS
Organization : 512K x 8 bit
Power Supply Voltage : 2.7V ~ 3.6V
Low Data Retention Voltage : 1.5V(Min)
Three state output and TTL Compatible
Package Type : 32-TSOP1
PRODUCT FAMILY
Power Dissipation
Product
Family
EM641FV8FT
Operating
Temperature
Vcc
Range
Speed
Standby
(ISB1 , Typ)
Industrial (-40 ~ 85oC)
2.7V~3.6V
551) / 70ns
1 µA2)
Operating
(I CC1.Max)
3 mA
PKG Type
32- TSOP1
1. The parameter is measured with 30pF test load.
2. Typical values are measured at Vcc=3.3V, T A =25o C and not 100% tested.
FUNCTIONAL BLOCK DIAGRAM
A11
1
32
OE
A9
2
31
A10
A8
3
30
CS
A13
4
29
IO8
WE
A17
5
6
28
27
IO7
IO6
A15
7
26
IO5
VCC
A18
8
9
25
24
IO4
VSS
A16
A14
A12
10
11
23
22
I/O3
I/O2
12
21
I/O1
A7
A6
13
20
A0
14
15
19
A1
A5
A4
16
18
17
A2
A3
32 - TSOP
Type1 - Forward
Pre-charge Circuit
A0
A1
A2
VCC
Row S elect
PIN DESCRIPTION
A3
A4
A5
A6
A7
I/O1 ~ I/O4
Function
Name
Chip select inputs
WE
Write Enable input
OE
Output Enable input
Vcc
Power Supply
Address Inputs
Vss
Ground
Data Inputs/outputs
NC
No Connection
Data
Cont
I/O Circuit
Column Select
A11 A12 A13 A14 A15 A16 A17 A18
WE
I/O1 ~I/O 8
Data
Cont
Function
CS
A 0 ~A18
2048 x 2048
A8
A9
A10
I/O5 ~ I/O8
Name
VSS
Memory Array
OE
CS
2
Control Logic
EM641FV8FT Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
ABSOLUTE MAXIMUM RATINGS *
Parameter
Symbol
Voltage on Any Pin Relative to Vss
Ratings
Unit
VIN , VOUT
-0.2 to Vcc+0.3(Max.4.0V)
V
VCC
-0.2 to 4.0V
V
Power Dissipation
PD
1.0
W
Operating Temperature
TA
-40 to 85
oC
Voltage on Vcc supply relative to Vss
* Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
FUNCTIONAL DESCRIPTION
CS
OE
WE
I/O
Mode
Power
H
X
X
High-Z
Deselected
Stand by
L
H
H
High-Z
Output Disabled
Active
L
L
H
Data Out
Read
Active
L
X
L
Data In
Write
Active
Note: X means don’t care. (Must be low or high state)
3
EM641FV8FT Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter
1.
2.
3.
4.
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
2.7
3.3
3.6
V
Ground
VSS
0
0
0
V
Input high voltage
VIH
2.2
-
VCC + 0.22)
V
Input low voltage
VIL
-0.2 3)
-
0.6
V
TA= -40 to 85oC, otherwise specified
Overshoot: V CC +2.0 V in case of pulse width < 20ns
Undershoot: -2.0 V in case of pulse width < 20ns
Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE 1) (f =1MHz, TA=25oC)
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C IN
VIN=0V
-
8
pF
Input/Ouput capacitance
CIO
VIO =0V
-
10
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
V IN=V SS to V CC
-1
-
1
µA
Output leakage current
ILO
CS=VIH or OE = VIH or WE=V IL, VIO =VSS to V CC
-1
-
1
µA
Operating power supply
ICC
I IO=0mA, CS = VIL , VIN = VIH or V IL
-
-
3
mA
-
-
3
mA
55ns
-
-
25
70ns
-
-
20
I CC1
Cycle time=1µs, 100% duty, I IO=0mA,
CS<0.2V, V I N<0.2V or V IN> V CC-0.2V
Average operating current
I CC2
Cycle time = Min, I IO =0mA, 100% duty,
CS= VIL , V IN=V IL or V IH
Output low voltage
VOL
I OL = 2.1mA
-
-
0.4
V
Output high voltage
VOH
I O H = -1.0mA
2.4
-
-
V
-
-
0.3
mA
-
11)
12
µA
Standby Current (TTL)
ISB
CS=VIH , Other inputs=VIH or VIL
CS>V CC -0.2V,
Standby Current (CMOS)
ISB1
Other inputs=0~VCC
(Typ. condition : V C C=3.3V @ 25 oC)
o
(Max. condition : V CC=3.6V @ 85 C)
NOTES
1. Typical values are measured at Vcc=3.3V, TA= 25o C and not 100% tested.
4
LL
LF
mA
EM641FV8FT Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
VTM 3)
AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
R12)
Input Pulse Level : 0.4 to 2.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 1.5V
Output Load (See right) : CL = 100pF+ 1 TTL
R22)
CL1)
CL 1) = 30pF + 1 TTL
1. Including scope and Jig capacitance
2. R1 =3070Ω,
R 2 =3150Ω
3. VTM=2.8V
READ CYCLE (V cc =2.7 to 3.6V, Gnd = 0V, T A = -40oC to +85oC)
Parameter
55ns
Symbol
70ns
Min
Max
Min
Max
Unit
Read cycle time
tRC
55
-
70
-
ns
Address access time
tAA
-
55
-
70
ns
Chip select to output
tco
-
55
-
70
ns
Output enable to valid output
tO E
-
25
-
35
ns
Chip select to low-Z output
tLZ
10
-
10
-
ns
Output enable to low-Z output
tOLZ
5
-
5
-
ns
Chip disable to high-Z output
tHZ
0
20
0
25
ns
Output disable to high-Z output
tOHZ
0
20
0
25
ns
Output hold from address change
tOH
10
-
10
-
ns
WRITE CYCLE (Vcc =2.7 to 3.6V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
55ns
Symbol
70ns
Unit
Min
Max
Min
Max
Write cycle time
tWC
55
-
70
-
ns
Chip select to end of write
tCW
45
-
60
-
ns
Address setup time
tAs
0
-
0
-
ns
Address valid to end of write
tAW
45
-
60
-
ns
Write pulse width
tWP
40
-
50
-
ns
Write recovery time
tWR
0
-
0
-
ns
Write to ouput high-Z
tWHZ
0
20
0
20
ns
Data to write time overlap
tDW
25
Data hold from write time
tDH
0
-
0
-
ns
End write to output low-Z
tOW
5
-
5
-
ns
5
30
ns
merging Memory & Logic Solutions Inc.
EM641FV8FT Series
Low Power, 512Kx8 SRAM
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1).
(Address Controlled, CS=OE=V IL, WE=V IH )
tRC
Address
tAA
tOH
Data Out
Previous Data Valid
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE = VIH)
tRC
Address
tAA
tOH
tCO
CS
tHZ
tOE
OE
tOHZ
tOLZ
Data Out
High-Z
Data Valid
tLZ
NOTES (READ CYCLE)
1. t HZ and tOHZ are defined as the outputs achieve the open circuit conditions and are not referanced to output voltage levels.
2. At any given temperature and voltage condition, t HZ(Max.) is less than t LZ(Min.) both for a given device and from device to device
interconnection.
6
EM641FV8FT Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE CONTROLLED)
tWC
Address
tCW (2)
tWR(4)
CS
tA W
tWP (1)
WE
tAS(3)
Data in
tDW
High-Z
High-Z
Data Valid
tWHZ
Data out
tDH
tOW
Data Undefined
TIMING WAVEFORM OF WRITE CYCLE(2) (CS CONTROLLED)
tWC
Address
tAS(3)
tCW (2)
tWR (4)
CS
tAW
tWP (1)
WE
tDW
Data in
Data out
tDH
Data Valid
High-Z
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(t WP) of low CS and low WE. A write begins at the latest transition among CS goes low and
WE goes low. A write ends at the earliest transition when CS goes high and WE goes high. The tWP is measured from the
beginning of write to the end of write.
2. t CW is measured from the CS going low to end of write.
3. t A S is measured from the address valid to the beginning of write.
4. t WR is measured from the end or write to the address change. tWR applied in case a write ends as CS or WE going high.
7
EM641FV8FT Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
DATA RETENTION CHARACTERISTICS
Parameter
Symbol
VCC for Data Retention
VDR
Data Retention Current
I DR
Chip Deselect to Data Retention Time
tSDR
Operation Recovery Time
Test Condition
ISB1 Test Condition
(Chip Disabled)
1)
VCC =1.5V, ISB1 Test Condition
(Chip Disabled) 1)
Min
Typ2)
Max
Unit
1.5
-
3.6
V
-
0.5
-
µA
0
-
-
t RC
-
-
See data retention wave form
tRDR
ns
NOTES
1. See the IS B 1 measurement condition of datasheet page 4.
2. Typical values are measured at T A= 25o C and not 100% tested.
DATA RETENTION WAVE FORM
CS Controlled
tSDR
Data Retention Mode
Vcc
2.7V
2.2V
VDR
CS > Vcc-0.2V
CS
GND
8
tRDR
merging Memory & Logic Solutions Inc.
EM641FV8FT Series
Low Power, 512Kx8 SRAM
Unit : millimeters/Inches
9
merging Memory & Logic Solutions Inc.
EM641FV8FT Series
Low Power, 512Kx8 SRAM
MEMORY FUNCTION GUIDE
EM X XX X X X XX X X - XX XX
1. EMLSI Memory
11. Power
2. Device Type
10. Speed
3. Density
4. Option
9. Packages
5. Technology
8. Version
6. Operating Voltage
7. Orgainzation
1. Memory Component
7. Orginzation
8 ---------------------- x8 bit
16 ---------------------- x16 bit
32 ---------------------- x32 bit
2. Device Type
6 ------------------------ Low Power SRAM
7 ------------------------ STRAM
8. Version
Blank ----------------- Mother Die
A ----------------------- First revision
B ----------------------- Second revision
C ----------------------- Third revision
D ----------------------- Fourth revision
E ----------------------- Fifth revision
F ----------------------- Sixth revision
3. Density
1 ------------------------- 1M
2 ------------------------- 2M
4 ------------------------- 4M
8 ------------------------- 8M
16 ----------------------- 16M
32 ----------------------- 32M
64 ----------------------- 64M
9. Package
Blank ---------------------- FPBGA
S ---------------------------- 32 sTSOP1
T ---------------------------- 32 TSOP1
U ---------------------------- 44 TSOP2
W ---------------------------- Wafer
4. Mode Option
0 -------- Dual CS
1 -------- Single CS
2 -------- Multiplexed Address
3 -------- Single CS with LB,UB (tBA=tOE)
4 -------- Single CS with LB,UB (tBA=tCO)
5 -------- Dual CS with LB,UB (tBA=tOE)
6 -------- Dual CS with LB,UB (tBA=tCO)
10. Speed
45 ---------------------- 45ns
55 ---------------------- 55ns
70 ---------------------- 70ns
85 ---------------------- 85ns
10 --------------------- 100ns
12 --------------------- 120ns
5. Technology
Blank ------------------ CMOS
F ------------------------ Full CMOS
6. Operating Voltage
Blank ------------------- 5V
V ------------------------- 2.7V~3.6V
U ------------------------- 3.0V
S ------------------------- 2.5V
R ------------------------- 2.0V
P ------------------------- 1.8V
11. Power
LL ---------------------- Low Low Power
LF ---------------------- Low Low Power (Pb-free)
L ---------------------- Low Power
S ---------------------- Standard Power
10
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