Diode Semiconductor Korea BR805---BR810 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 8.0 A SILICON BRIDGE RECTIFIERS FEATURES BR8 Rating to 1000V PRV Ideal for printed circuit board Reliable low cost construction utilizing molded φ 1 .3± 0.1 23.2± 1.5 7.1± 0.4 Surge overload rating to 125 Amperes peak plastic technique results in inexpensive product Lead solderable per MIL-STD-202 method 208 18.9± 0.4 12.6± 0.5 Mounting: thru hole for # 6 screw mounting 12.6± 0.5 18.9± 0.4 φ 3.84 TYP. Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BR805 BR81 BR82 BR84 BR86 BR88 BR810 UNITS Maximum recurrent peak reverse voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage V DC 50 100 200 400 600 800 1000 V Maximum average forw ard output current @TA=50 IF(AV) 8.0 A IFSM 125.0 A VF 1.1 V 10.0 μA 1.0 mA Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 4.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA=100 Operating junction temperature range Storage temperature range IR TJ - 55 ---- + 125 TSTG - 55 ---- + 150 www.diode.kr Diode Semiconductor Korea BR805---BR810 125 100 8.3ms Single Half Sine Wave T J =125 75 50 25 0 1 100 10 FIG.2 -- FORWARD DERATING CURVE AVERAGE FORWARD OUTPUT CURRENT, AMPERES PEAK FORWARD SURGE CURRENT, AMPERES FIG.1 -- PEAK FORWARD SURGE CURRENT 10 8 6 4 2 0 0 50 NUMBER OF CYCLES AT 60HZ 10 1.0 T J =25 0.1 .7 .8 .9 1 1.1 1.2 1.3 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.4 -- TYPICAL REVERSE CHARACTERISTIC INSTANTANEOUS REVERSE CURRENT, MICRO AMPERES INSTANTANEOUS FORWARD CURRENT, AMPERES 100 .6 150 AMBIENT TEMPERATURE, FIG.3 -- TYPICAL FORWARD CHARACTERISTIC .01 100 10 1.0 0.1 TJ=25 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE www.diode.kr