Diodes DDTC115TE Npn pre-biased small signal sot-523 surface mount transistor Datasheet

SPICE MODELS: DDTC113TE DDTC123TE DDTC143TE DDTC114TE DDTC124TE DDTC144TE DDTC115TE DDTC125TE
DDTC (R1-ONLY SERIES) E
NPN PRE-BIASED SMALL SIGNAL SOT-523
SURFACE MOUNT TRANSISTOR
NEW PRODUCT
Features
·
·
·
·
Epitaxial Planar Die Construction
A
Complementary PNP Types Available (DDTA)
C
Built-In Biasing Resistor, R1 only
SOT-523
Lead Free/RoHS Compliant (Note 2)
·
·
·
·
·
·
·
Dim
Min
Max
Typ
A
0.15
0.30
0.22
G
B
0.75
0.85
0.80
H
C
1.45
1.75
1.60
E
B
Mechanical Data
·
·
B C
TOP VIEW
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
D
¾
¾
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
J
0.00
0.10
0.05
K
0.60
0.80
0.75
Terminal Connections: See Diagram
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
a
0°
8°
¾
K
Moisture Sensitivity: Level 1 per J-STD-020C
J
D
Terminals: Solderable per MIL-STD-202, Method 208
Marking: Date Code and Marking Code (See Diagrams &
Page 2)
Weight: 0.002 grams (approx.)
P/N
Maximum Ratings
L
C
R1
B
Ordering Information (See Page 2)
DDTC113TE
DDTC123TE
DDTC143TE
DDTC114TE
DDTC124TE
DDTC144TE
DDTC115TE
DDTC125TE
M
N
All Dimensions in mm
R1 (NOM)
MARKING
1KW
2.2KW
4.7KW
10KW
22KW
47KW
100KW
200KW
N01
N03
N07
N12
N16
N19
N23
N25
E
SCHEMATIC DIAGRAM
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
IC (Max)
100
mA
Pd
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note:
150
mW
RqJA
833
°C/W
Tj, TSTG
-55 to +150
°C
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead
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ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
BVCBO
50
¾
¾
V
IC = 50mA
Collector-Emitter Breakdown Voltage
BVCEO
50
¾
¾
V
IC = 1mA
Emitter-Base Breakdown Voltage
BVEBO
5
¾
¾
V
IE = 50mA
Collector Cutoff Current
ICBO
¾
¾
0.5
mA
VCB = 50V
Emitter Cutoff Current
IEBO
¾
¾
0.5
mA
VEB = 4V
0.3
V
IC/IB = 10mA/1mA
IC/IB = 5mA/0.5mA
IC/IB = 2.5mA/.25mA
IC/IB = 1mA/.1mA
IC/IB = 5mA/0.5mA
IC/IB = 2.5mA/.25mA
IC/IB = 1mA/0.1mA
IC/IB = .5mA/.05mA
Max Unit
IC = 1mA, VCE = 5V
VCE(sat)
¾
¾
DC Current Transfer Ratio
hFE
100
250
600
¾
Input Resistor (R1) Tolerance
DR1
-30
¾
+30
%
Collector-Emitter Saturation Voltage
fT
Gain-Bandwidth Product*
250
¾
¾
MHz
Test Condition
DDTC113TE
DDTC123TE
DDTC143TE
DDTC114TE
DDTC124TE
DDTC144TE
DDTC115TE
DDTC125TE
¾
VCE = 10V, IE = -5mA,
f = 100MHz
* Transistor - For Reference Only
Ordering Information
Notes:
(Note 3)
Device
Packaging
Shipping
DDTC113TE-7-F
SOT-523
3000/Tape & Reel
DDTC123TE-7-F
SOT-523
3000/Tape & Reel
DDTC143TE-7-F
SOT-523
3000/Tape & Reel
DDTC114TE-7-F
SOT-523
3000/Tape & Reel
DDTC124TE-7-F
SOT-523
3000/Tape & Reel
DDTC144TE-7-F
SOT-523
3000/Tape & Reel
DDTC115TE-7-F
SOT-523
3000/Tape & Reel
DDTC125TE-7-F
SOT-523
3000/Tape & Reel
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
NEW PRODUCT
Electrical Characteristics
XXX
XXX = Product Type Marking Code
See Sheet 1 Diagrams
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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DDTC (R1-ONLY SERIES) E
1
VCE(SAT), MAXIMUM COLLECTOR VOLTAGE (V)
PD, POWER DISSIPATION (MILLIWATTS)
250
200
150
100
50
0
-50
0
50
100
IC/IB = 10
0.1
75°C
-25°C
25°C
0.01
0.001
150
10
0
40
30
50
4
VCE = 10
IE = 0mA
COB, CAPACITANCE (pF)
hFE, DC CURRENT GAIN (NORMALIZED)
1000
75°C
20
IC, COLLECTOR CURRENT (mA)
Fig. 2 VCE(SAT) vs. IC
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve
-25°C
25°C
100
10
3
2
1
0
1
0
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
10
5
100
15
30
25
20
VR, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
10
100
75°C
VO = 0.2
25°C
10
Vin, INPUT VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
NEW PRODUCT
TYPICAL CURVES - DDTC114TE
-25°C
1
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
-25°C
25°C
1
Vin, INPUT VOLTAGE (V)
Fig. 5 Collector Current Vs. Input Voltage
DS30315 Rev. 5 - 2
75°C
1
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0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
DDTC (R1-ONLY SERIES) E
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
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ã Diodes Incorporated
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