AO3406 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3406 is Pb-free (meets ROHS & Sony 259 specifications). AO3406L is a Green Product ordering option. AO3406 and AO3406L are electrically identical. VDS (V) = 30V ID = 3.6A (VGS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 105mΩ (VGS = 4.5V) TO-236 (SOT-23) Top View D G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V 15 1.4 W 0.9 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 2.9 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 3.6 TA=25°C Power Dissipation A Maximum 30 RθJA RθJL Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W AO3406 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 15 TJ=55°C VGS=10V, ID=3.6A 105 VDS=5V, ID=3.6A 7 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time A 75 Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Rg V VGS=4.5V, ID=2.8A Forward Transconductance Crss 3 100 gFS Output Capacitance 1.9 0.79 288 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=3.6A VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω µA nA 74 TJ=125°C Units 100 65 Static Drain-Source On-Resistance Coss 5 50 VSD IS Max V VDS=24V, VGS=0V IDSS RDS(ON) Typ mΩ mΩ S 1 V 2.5 A 375 pF 57 pF 39 pF 3 6 Ω 6.5 8.5 nC 3.1 4 nC 1.2 nC 1.6 nC 4.6 ns 1.9 ns 20.1 ns 2.6 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=3.6A, dI/dt=100A/µs 10.2 Qrr Body Diode Reverse Recovery Charge IF=3.6A, dI/dt=100A/µs 3.5 14 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 5 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha and Omega Semiconductor, Ltd. AO3406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V 4.5V 8 12 6V 6 ID(A) 9 ID (A) VDS=5V 4V 3.5V 6 4 125°C VGS=3V 3 2 0 25°C 0 0 1 2 3 4 1.5 5 2 100 3 3.5 4 4.5 5 Normalized On-Resistance 1.8 90 RDS(ON) (mΩ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 80 70 60 50 VGS=10V 40 ID=3.6A 1.6 VGS=4.5V VGS=10V 1.4 1.2 1 0.8 0 2 4 6 8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 200 ID=3.6A 1.0E+00 125° 150 100 IS (A) RDS(ON) (mΩ) 1.0E-01 125°C 1.0E-02 25° 1.0E-03 50 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 10 VDS=15V ID=3.6A Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 300 200 Coss 0 0 0 1 2 3 4 5 6 7 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 TJ(Max)=150°C TA=25°C RDS(ON) limited 100µs 20 25 30 TJ(Max)=150°C TA=25°C 15 10µs Power (W) 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ID (Amps) Crss 100 1ms 0.1s 10ms 1.0 10 1s 5 10s DC 0.1 0.1 1 10 0 0.001 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha and Omega Semiconductor, Ltd. 100 1000