MPSW45, MPSW45A MPSW45A is a Preferred Device One Watt Darlington Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSW45A MPSW45 VCES 40 50 Vdc Collector −Base Voltage MPSW45A MPSW45 VCBO 50 60 Vdc VEBO 12 Vdc Collector Current − Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 W mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Resistance, Junction−to−Case RqJC 50 °C/W Emitter −Base Voltage Operating and Storage Junction Temperature Range EMITTER 1 1 2 TO−92 (TO−226) CASE 29−10 STYLE 1 3 MARKING DIAGRAM THERMAL CHARACTERISTICS MPS W45x AYWW G G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MPSW45x = Device Code x = 45A Devices A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 3 1 Publication Order Number: MPSW45/D MPSW45, MPSW45A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 50 − − 50 60 − − 12 − − − 100 100 − 100 25,000 15,000 4,000 150,000 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES MPSW45 MPSW45A Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Vdc V(BR)CBO MPSW45 MPSW45A Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Vdc ICBO MPSW45 MPSW45A Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO Vdc nAdc nAdc ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) − Collector −Emitter Saturation Voltage (IC = 1.0 Adc, IB = 2.0 mAdc) VCE(sat) − 1.5 Vdc Base− Emitter Saturation Voltage (IC = 1.0 Adc, IB = 2.0 mAdc) VBE(sat) − 2.0 Vdc Base −Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc) VBE(on) − 2.0 Vdc fT 100 − MHz Ccb − 6.0 pF SMALL− SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 MPSW45, MPSW45A NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 2.0 BANDWIDTH = 1.0 Hz RS ≈ 0 200 BANDWIDTH = 1.0 Hz i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 500 100 10 mA 50 100 mA 20 IC = 1.0 mA 10 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 mA 0.1 0.07 0.05 10 mA 0.03 5.0 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 0.02 10 20 50k 100k 50 100 200 Figure 3. Noise Current 200 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) IC = 10 mA 70 50 100 mA 30 20 1.0 mA 10 1.0 2.0 10 10 mA 8.0 100 mA 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 1000 0 1.0 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) Figure 5. Wideband Noise Figure http://onsemi.com 3 500 1000 MPSW45, MPSW45A SMALL−SIGNAL CHARACTERISTICS 4.0 |h fe |, SMALL−SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 25°C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 VCE = 5.0 V f = 100 MHz TJ = 25°C 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 1.0 200k hFE , DC CURRENT GAIN TJ = 125°C 100k 70k 50k 25°C 30k 20k 10k 7.0k 5.0k −55 °C VCE = 5.0 V 3.0k 2.0k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 TJ = 25°C 2.5 IC = 10 mA RθV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1000 Figure 9. Collector Saturation Region 1.6 0.6 500 3.0 Figure 8. DC Current Gain 0.8 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 7. High Frequency Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 2.0 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 −1.0 −2.0 *APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C *RqVC FOR VCE(sat) −55 °C TO 25°C −3.0 25°C TO 125°C −4.0 qVB FOR VBE −5.0 −55 °C TO 25°C −6.0 5.0 7.0 10 Figure 10. “On” Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients http://onsemi.com 4 500 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MPSW45, MPSW45A 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.05 0.1 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE ZθJC(t) = r(t) • RθJCTJ(pk) − TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJATJ(pk) − TA = P(pk) ZθJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0k 700 500 FIGURE A 1.0 ms 300 TA = 25°C 200 tP TC = 25°C 100 ms PP 1.0 s 100 70 50 t1 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 PP 0.4 0.6 1/f 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) t DUTYCYCLE + t1f + 1 tP PEAK PULSE POWER = PP 40 Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data ORDERING INFORMATION Device MPSW45 MPSW45G MPSW45RLRE MPSW45RLREG MPSW45A MPSW45AG MPSW45ARLRA MPSW45ARLRAG MPSW45AZL1 MPSW45AZL1G Package Shipping † TO−92 5,000 Units / Box TO−92 (Pb−Free) 5,000 Units / Box TO−92 2,000 / Tape & Reel TO−92 (Pb−Free) 2,000 / Tape & Reel TO−92 5,000 Units / Box TO−92 (Pb−Free) 5,000 Units / Box TO−92 2,000 / Tape & Reel TO−92 (Pb−Free) 2,000 / Tape & Reel TO−92 2,000 / Ammo Pack TO−92 (Pb−Free) 2,000 / Ammo Pack †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MPSW45, MPSW45A PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−10 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. A B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R D G H J R 1 2 3 N C SECTION X−X N INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.135 −−− MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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