MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon www.onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • Compliant S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol VCBO Collector Current − Peak (Note 3) 3 Vdc 1 60 75 2 VEBO MMBT2222L MMBT2222AL, SMMBT2222AL Collector Current − Continuous Vdc 30 40 MMBT2222L MMBT2222AL, SMMBT2222AL Emitter −Base Voltage Unit VCEO MMBT2222L MMBT2222AL, SMMBT2222AL Collector −Base Voltage Value SOT−23 CASE 318 STYLE 6 Vdc 5.0 6.0 IC 600 mAdc ICM 1100 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD RqJA PD Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Reference SOA curve. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 11 1 xxx M G G 1 xxx = 1P or M1B M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: MMBT2222LT1/D MMBT2222L, MMBT2222AL, SMMBT2222AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222 MMBT2222A V(BR)CEO 30 40 − − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) MMBT2222 MMBT2222A V(BR)CBO 60 75 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) MMBT2222 MMBT2222A V(BR)EBO 5.0 6.0 − − Vdc − 10 Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A, SMMBT2222A ICEX Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125°C) (VCB = 60 Vdc, IE = 0, TA = 125°C) MMBT2222 MMBT2222A, SMMBT2222A MMBT2222 MMBT2222A, SMMBT2222A ICBO − − − − 0.01 0.01 10 10 mAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A, SMMBT2222A IEBO − 100 nAdc IBL − 20 nAdc 35 50 75 35 100 50 30 40 − − − − 300 − − − MMBT2222 MMBT2222A, SMMBT2222A − − 0.4 0.3 MMBT2222 MMBT2222A, SMMBT2222A − − 1.6 1.0 MMBT2222 MMBT2222A, SMMBT2222A − 0.6 1.3 1.2 MMBT2222 MMBT2222A, SMMBT2222A − − 2.6 2.0 250 300 − − − 8.0 − − 30 25 2.0 0.25 8.0 1.25 − − 8.0 4.0 50 75 300 375 Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A, SMMBT2222A nAdc ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 4) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 4) (IC = 500 mAdc, VCE = 10 Vdc) (Note 4) Collector −Emitter Saturation Voltage (Note 4) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base −Emitter Saturation Voltage (Note 4) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE MMBT2222A only MMBT2222 MMBT2222A, SMMBT2222A − VCE(sat) Vdc VBE(sat) Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 5) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT MMBT2222 MMBT2222A, SMMBT2222A Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MHz Cobo pF Cibo MMBT2222 MMBT2222A, SMMBT2222A Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A MMBT2222A, SMMBT2222A Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A MMBT2222A, SMMBT2222A Small −Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A MMBT2222A, SMMBT2222A pF hie kW X 10− 4 hre hfe www.onsemi.com 2 − MMBT2222L, MMBT2222AL, SMMBT2222AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 5.0 25 35 200 − 150 − 4.0 Unit SMALL− SIGNAL CHARACTERISTICS mmhos hoe Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A MMBT2222A, SMMBT2222A Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A, SMMBT2222A rb, Cc Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz) MMBT2222A, SMMBT2222A ps NF dB SWITCHING CHARACTERISTICS (MMBT2222A only) Delay Time Rise Time (VCC = 30 Vdc, VBE(off) = − 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 10 tr − 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 tf − 60 Storage Time Fall Time ns ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 5. fT is defined as the frequency at which |hfe| extrapolates to unity. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% +16 V 200 +16 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 200 0 0 -2 V 1 kW < 2 ns 1k -14 V CS* < 10 pF < 20 ns CS* < 10 pF 1N914 -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn−On Time Figure 2. Turn−Off Time hFE , DC CURRENT GAIN 1000 700 500 TJ = 125°C 300 200 25°C 100 70 50 -55°C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain www.onsemi.com 3 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) MMBT2222L, MMBT2222AL, SMMBT2222AL 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region 200 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 500 Figure 5. Turn −On Time 200 300 500 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE IC = 1.0 mA, RS = 150 W 500 mA, RS = 200 W 100 mA, RS = 2.0 kW 50 mA, RS = 4.0 kW f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 6.0 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 6. Turn −Off Time 10 8.0 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, TIME (ns) t, TIME (ns) 100 70 50 4.0 2.0 IC = 50 mA 100 mA 500 mA 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 50 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects www.onsemi.com 4 50 k 100 k f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) MMBT2222L, MMBT2222AL, SMMBT2222AL 30 CAPACITANCE (pF) 20 Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1 0.2 0.3 20 30 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 50 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 Figure 9. Capacitances 70 100 IC/IB = 10 1.2 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 50 1.3 IC/IB = 10 150°C 0.1 −55°C 25°C 1.1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.01 0.001 0.01 0.1 0.001 1 0.01 1 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Collector Emitter Saturation Voltage vs. Collector Current Figure 12. Base Emitter Saturation Voltage vs. Collector Current 1.2 +0.5 VCE = 1 V 0 1.0 0.9 COEFFICIENT (mV/ °C) VBE(on), BASE−EMITTER VOLTAGE (V) 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 10. Current−Gain Bandwidth Product 1 1.1 2.0 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 RqVC for VCE(sat) -0.5 -1.0 -1.5 RqVB for VBE -2.0 0.3 0.2 -2.5 0.001 0.01 0.1 1 0.1 0.2 IC, COLLECTOR CURRENT (A) 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 14. Temperature Coefficients Figure 13. Base Emitter Voltage vs. Collector Current www.onsemi.com 5 500 MMBT2222L, MMBT2222AL, SMMBT2222AL 10 10 ms 100 ms 1 1 ms 1s IC (A) Thermal Limit 0.1 0.01 0.001 Single Pulse Test @ TA = 25°C 0.01 0.1 1 10 100 VCE (Vdc) Figure 15. Safe Operating Area ORDERING INFORMATION Device MMBT2222LT1G MMBT2222ALT1G, SMMBT2222ALT1G MMBT2222LT3G MMBT2222ALT3G, SMMBT2222ALT3G Specific Marking Code Package Shipping† M1B SOT−23 (Pb−Free) 3000 / Tape & Reel 1P SOT−23 (Pb−Free) 3000 / Tape & Reel M1B SOT−23 (Pb−Free) 10,000 / Tape & Reel 1P SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 6 MMBT2222L, MMBT2222AL, SMMBT2222AL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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