Cypress CY7C168A 4kx4 ram Datasheet

69A
CY7C168A
4Kx4 RAM
Features
Functional Description
• Automatic power-down when deselected
• CMOS for optimum speed/power
• High speed
— tAA = 15 ns
• Low active power
— 633 mW
• Low standby power
— 110 mW
• TTL-compatible inputs and outputs
• VIH of 2.2V
• Capable of withstanding greater than 2001V electrostatic discharge
The CY7C168A is a high-performance CMOS static RAM organized as 4096 by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. The CY7C168A has an automatic power-down feature,
reducing the power consumption by 77% when deselected.
Writing to the device is accomplished when the Chip Select
(CE) and Write Enable (WE) inputs are both LOW. Data on the
four data input/output pins (I/O0 through I/O3) is written into the
memory location specified on the address pins (A0 through
A11).
Reading the device is accomplished by taking the Chip Enable
(CE) LOW, while Write Enable (WE) remains HIGH. Under
these conditions, the contents of the location specified on the
address pins will appear on the four data input/output pins
(I/O0 through I/O3).
The input/output pins remain in a high-impedance state when
Chip Enable (CE) is HIGH or Write Enable (WE) is LOW.
A die coat is used to insure alpha immunity.
Logic Block Diagram
Pin Configurations
DIP/SOJ
Top View
A4
A5
A6
A7
A8
A9
A10
A11
INPUTBUFFER
SENSE AMP
I/O0
ROW DECODER
A0
A1
A2
A3
A4
A5
A6
128 x 128
ARRAY
CE
GND
I/O1
1
20
2
19
3
18
4
17
5
6
7C168A 16
\
15
7
14
8
13
9
12
10
11
VCC
A3
A2
A1
A0
I/O 0
I/O 1
I/O 2
I/O 3
WE
C168A-2
I/O2
I/O3
COLUMN
DECODER
CE
POWER
DOWN
(7C168A)
WE
A7 A8 A9 A10 A11
C168A-1
Selection Guide
7C168A-15
7C168A-20
7C168A-25
7C168A-35
7C168A-45
Maximum Access Time (ns)
15
20
25
35
45
Maximum Operating
Current (mA)
115
90
90
90
90
-
100
100
100
100
Commercial
Military
Cypress Semiconductor Corporation
Document #: 38-05029 Rev. **
•
3901 North First Street
•
San Jose
•
CA 95134 • 408-943-2600
Revised August 24, 2001
CY7C168A
Maximum Ratings
Output Current into Outputs (Low) .............................. 20 mA
(Above which the useful life may be impaired. For user guidelines, not tested.)
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015)
Storage Temperature .....................................−65°C to +150°C
Latch-Up Current..................................................... >200 mA
Ambient Temperature with
Power Applied..................................................−55°C to +125°C
Operating Range
Supply Voltage to Ground Potential
(Pin 20 to Pin 10)................................................ −0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State .................................................... −0.5V to +7.0V
Range
Ambient
Temperature
VCC
Commercial
0°C to +70°C
5V ± 10%
−55°C to +125°C
5V ± 10%
[1]
Military
DC Input Voltage .................................................−3.0V to +7.0V
Electrical Characteristics Over the Operating Range[2]
7C168A-15
Parameter
Description
Test Conditions
Min.
VOH
Output HIGH Voltage
VCC = Min., IOH = −4.0 mA
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
VIH
Input HIGH Voltage
Max.
2.4
7C168A-20
Min.
2.4
0.4
[3]
Max.
Unit
V
0.4
V
2.2
VCC
2.2
VCC
V
−0.5
0.8
−0.5
0.8
V
VIL
Input LOW Voltage
IIX
Input Load Current
GND < VI < VCC
−10
+10
−10
+10
µA
IOZ
Output Leakage
Current
GND < VO < VCC,
Output Disabled
−10
+10
−10
+10
µA
IOS
Output Short
Circuit Current[4]
VCC = Max., VOUT = GND
−350
−350
mA
ICC
VCC Operating
Supply Current
VCC = Max.,
IOUT = 0 mA
Com’l
115
90
mA
ISB1
Automatic CE
Power-Down Current
Max. VCC,
CE > VIH
Com’l
Automatic CE
Power-Down Current
Max. VCC,
CE > VCC − 0.3V
Com’l
ISB2
Mil
Mil
Mil
-
100
40
40
-
40
20
20
-
20
mA
mA
Notes:
1. TA is the “instant on” case temperature.
2. See the last page of this specification for Group A subgroup testing information.
3. VIL min. = −3.0V for pulse durations less than 30 ns.
4. Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
Document #: 38-05029 Rev. **
Page 2 of 10
CY7C168A
Electrical Characteristics Over the Operating Range[2] (continued)
Parameter
Description
Test Conditions
VOH
Output HIGH Voltage
VCC = Min., IOH = −4.0 mA
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
VIH
Input HIGH Voltage
7C168A-25
7C168A-35
7C168A-45
Min.
Min.
Min.
Max.
2.4
Max.
2.4
0.4
2.2
Max.
Unit
2.4
0.4
V
0.4
V
V
VCC
2.2
VCC
2.2
VCC
VIL
Input LOW Voltage
−0.5
0.8
−0.5
0.8
−0.5
0.8
V
IIX
Input Load Current
GND < VI < VCC
−10
+10
−10
10
−10
10
µA
IOZ
Output Leakage
Current
GND < VO < VCC
Output Disabled
−10
+10
−50
50
−50
50
µA
IOS
Output Short
Circuit Current[4]
VCC = Max., VOUT = GND
−350
−350
mA
ICC
VCC Operating
Supply Current
VCC = Max.,
IOUT = 0 mA
Com’l
90
90
90
mA
Mil
100
100
100
Automatic CE
Power-Down Current
Max. VCC,
CE > VIH
Com’l
20
20
20
Mil
20
20
20
Automatic CE
Power-Down Current
Max. VCC,
CE > VCC − 0.3 V
Com’l
20
20
20
Mil
20
20
20
ISB1
ISB2
[3]
−350
mA
mA
Capacitance[5]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
Max.
Unit
10
pF
10
pF
TA = 25°C, f = 1 MHz,
VCC = 5.0V
Note:
5. Tested initially and after any design or process changes that may affect these parameters.
AC Test Loads and Waveforms
R1 481 Ω
5V
OUTPUT
R1 481 Ω
5V
ALL INPUT PULSES
OUTPUT
R2
255Ω
30 pF
INCLUDING
JIG AND
SCOPE
Equivalent to:
3.0V
R2
255Ω
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
C168A-3
GND
< 5 ns
90%
10%
90%
10%
< 5 ns
C168A-4
THÉVENIN EQUIVALENT
167Ω
OUTPUT
Document #: 38-05029 Rev. **
1.73V
Page 3 of 10
CY7C168A
Switching Characteristics Over the Operating Range[2,6]
Parameter
Description
7C168A-15
7C168A-20
7C168A-25
7C168A-35
7C168A-45
Min.
Min.
Min.
Min.
Min.
Max.
Max.
Max.
Max.
Max. Unit
READ CYCLE
tRC
Read Cycle Time
15
tAA
Address to Data Valid
tOHA
Output Hold from Address Change
tACE
Power Supply Current
tLZCE
CE LOW to Low Z[7]
20
15
20
5
5
15
5
5
8
35
25
20
5
[7, 8]
25
35
5
25
5
8
45
45
5
35
5
ns
45
5
ns
ns
CE HIGH to High Z
tPU
CE LOW to Power Up
tPD
CE HIGH to Power-Down
tRCS
Read Command Set-Up
0
0
0
0
0
ns
tRCH
Read Command Hold
0
0
0
0
0
ns
0
15
0
20
15
ns
tHZCE
0
10
ns
0
20
15
0
20
ns
ns
25
ns
[9]
WRITE CYCLE
tWC
Write Cycle Time
15
20
20
25
40
ns
tSCE
CE LOW to Write End
12
15
20
25
30
ns
tAW
Address Set-Up to Write End
12
15
20
25
30
ns
tHA
Address Hold from Write End
0
0
0
0
0
ns
tSA
Address Set-Up to Write Start
0
0
0
0
0
ns
tPWE
WE Pulse Width
12
15
15
20
20
ns
tSD
Data Set-Up to Write End
10
10
10
15
15
ns
tHD
Data Hold from Write End
0
0
0
0
0
ns
[7]
tLZWE
WE HIGH to Low Z
7
7
7
5
5
ns
tHZWE
WE LOW to High Z[7, 8]
5
5
5
5
10
ns
Switching Waveforms
Read Cycle No. 1 [10, 11]
tRC
ADDRESS
tOHA
DATA OUT
PREVIOUS DATA VALID
tAA
DATA VALID
C168A-5
Notes:
6. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
7. At any given temperature and voltage condition, tHZ is less than tLZ for all devices. Transition is measured ±500 mV from steady state voltage with specified loading in part
(b) of AC Test Loads and Waveforms.
8. tHZCE and tHZWE are tested with CL = 5 pF as in part (a) of Test Loads and Waveforms. Transition is measured ±500 mV from steady state voltage.
9. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signal must be LOW to initiate a write and either signal can terminate a
write by going high. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
10. WE is HIGH for read cycle.
11. Device is continuously selected, CE = VIL.
Document #: 38-05029 Rev. **
Page 4 of 10
CY7C168A
Switching Waveforms (continued)
Read Cycle
[10, 12]
tRC
CE
tACE
tLZCE
DATA OUT
tHZCE
HIGH IMPEDANCE
HIGH
IMPEDANCE
DATA VALID
tPD
tPU
ICC
VCC
SUPPLY
CURRENT
50%
50%
WE
ISB
tRCH
tRCS
C168A-6
[9]
Write Cycle No. 1 (WE Controlled)
tWC
ADDRESS
tSCE
CE
tAW
tSA
tHA
tPWE
WE
tSD
DATA IN
tHD
DATAIN VALID
tHZWE
DATA I/O
tLZWE
HIGH IMPEDANCE
DATA UNDEFINED
C168A-7
Write Cycle No. 2 (CS Controlled)
[9, 13]
tWC
ADDRESS
tSA
tSCE
CE
tHA
tAW
tPWE
WE
tSD
DATA IN
tHD
DATA IN VALID
tHZWE
HIGH IMPEDANCE
DATA I/O
DATA UNDEFINED
C168A-8
Notes:
12. Address valid prior to or coincident with CE transition LOW.
13. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
Document #: 38-05029 Rev. **
Page 5 of 10
CY7C168A
NORMALIZED SUPPLY CURRENT
vs. AMBIENT TEMPERATURE
NORMALIZED SUPPLY CURRENT
vs. SUPPLY VOLTAGE
1.2
NORMALIZED I CC , I SB
1.2
ICC
0.8
VIN = 5.0V
TA = 25°C
0.6
0.4
0.8
0.6
0.4
VCC = 5.0V
VIN = 5.0V
0.2
0.2
0.0
4.0
ISB
ISB
4.5
5.0
5.5
0.0
−55
6.0
NORMALIZED ACCESS TIME
vs. AMBIENT TEMPERATURE
1.4
1.6
1.3
1.4
NORMALIZED t AA
NORMALIZED t AA
NORMALIZED ACCESS TIME
vs. SUPPLY VOLTAGE
1.2
1.1
TA = 25°C
1.0
1.2
1.0
VCC = 5.0V
0.8
0.9
4.5
5.0
5.5
0.6
−55
6.0
25
2.5
25.0
DELTA tAA (ns)
TYPICAL ACCESS TIME CHANGE
vs. OUTPUT LOADING
30.0
2.0
1.5
1.0
0.5
20.0
15.0
10.0
VCC = 4.5V
TA = 25°C
5.0
1.0
2.0
3.0
4.0
SUPPLY VOLTAGE (V)
Document #: 38-05029 Rev. **
100
80
VCC = 5.0V
TA = 25°C
60
40
20
0
0.0
5.0
0.0
0
200
400
600
800 1000
CAPACITANCE (pF)
1.0
2.0
3.0
4.0
OUTPUT VOLTAGE (V)
OUTPUT SINK CURRENT
vs. OUTPUT VOLTAGE
140
120
100
80
60
VCC = 5.0V
TA = 25°C
40
20
0
0.0
125
TYPICAL POWER-ON CURRENT
vs. SUPPLY VOLTAGE
3.0
0.0
0.0
120
1.0
2.0
3.0
4.0
OUTPUT VOLTAGE (V)
AMBIENT TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
NORMALIZED I PO
125
OUTPUT SOURCE CURRENT
vs. OUTPUT VOLTAGE
AMBIENT TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
0.8
4.0
25
OUTPUT SINK CURRENT (mA)
1.0
ICC
1.0
NORMALIZED I CC vs.CYCLE TIME
1.1
NORMALIZED I CC
NORMALIZED I CC, I SB
1.4
OUTPUT SOURCE CURRENT (mA)
Typical DC and AC Characteristics
1.0
0.9
0.8
10
20
30
40
CYCLE FREQUENCY (MHz)
Page 6 of 10
CY7C168A
Ordering Information
Speed
(ns)
ICC
(mA)
15
115
20
90
25
35
45
Ordering Code
Package
Name
Package Type
Operating
Range
CY7C168A-15PC
P5
20-Lead (300-Mil) Molded DIP
CY7C168A-15VC
V5
20-Lead Molded SOJ
CY7C168A-20PC
P5
20-Lead (300-Mil) Molded DIP
CY7C168A-20VC
V5
20-Lead Molded SOJ
CY7C168A-20DMB
D6
20-Lead (300-Mil) CerDIP
Military
CY7C168A-25PC
P5
20-Lead (300-Mil) Molded DIP
Commercial
CY7C168A-25VC
V5
20-Lead Molded SOJ
80
CY7C168A-25DMB
D6
20-Lead (300-Mil) CerDIP
Military
70
CY7C168A-35PC
P5
20-Lead (300-Mil) Molded DIP
Commercial
CY7C168A-35VC
V5
20-Lead Molded SOJ
CY7C168A-35DMB
D6
20-Lead (300-Mil) CerDIP
Military
CY7C168A-45PC
P5
20-Lead (300-Mil) Molded DIP
Commercial
CY7C168A-45VC
V5
20-Lead Molded SOJ
CY7C168A-45DMB
D6
20-Lead (300-Mil) CerDIP
70
70
Commercial
Commercial
Military
MILITARY SPECIFICATIONS
Group A Subgroup Testing
Switching Characteristics
DC Characteristics
Parameter
Parameter
Subgroups
Subgroups
READ CYCLE
VOH
1, 2, 3
VOL
1, 2, 3
VIH
1, 2, 3
VIL Max.
1, 2, 3
IIX
1, 2, 3
IOZ
1, 2, 3
ICC
1, 2, 3
WRITE CYCLE
ISB1
1, 2, 3
tWC
7, 8, 9, 10, 11
ISB2
1, 2, 3
tSCE
7, 8, 9, 10, 11
tAW
7, 8, 9, 10, 11
tHA
7, 8, 9, 10, 11
tSA
7, 8, 9, 10, 11
tPWE
7, 8, 9, 10, 11
tSD
7, 8, 9, 10, 11
tHD
7, 8, 9, 10, 11
Document #: 38-05029 Rev. **
tRC
7, 8, 9, 10, 11
tAA
7, 8, 9, 10, 11
tOHA
7, 8, 9, 10, 11
tACE
7, 8, 9, 10, 11
tRCS
7, 8, 9, 10, 11
tRCH
7, 8, 9, 10, 11
Page 7 of 10
CY7C168A
Package Diagrams
20-Lead (300-Mil) CerDIP D6
MIL-STD-1835 D-8 Config. A
51-80029
20-Lead (300-Mil) Molded DIP P5
51-85011-A
Document #: 38-05029 Rev. **
Page 8 of 10
CY7C168A
Package Diagrams (continued)
20-Lead (300-Mil) Molded SOJ V5
51-85029-A
Document #: 38-05029 Rev. **
Page 9 of 10
© Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
CY7C168A
Document Title: CY7C168A 4K x 4 RAM
Document Number: 38-05029
REV.
ECN NO.
Issue
Date
Orig. of
Change
Description of Change
**
106815
09/10/01
SZV
Change from Spec number: 38-00095 to 38-05029
Document #: 38-05029 Rev. **
Page 10 of 10
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