UTC MMBT1116AL-L-AE3-R Pnp epitaxial silicon transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBT1116/A
PNP SILICON TRANSISTOR
PNP EPITAXIAL SILICON
TRANSISTOR
3

DESCRIPTION
Complement to UTC MMBT1616/A

1
SOT-23
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MMBT1116L-x-AE3-R
MMBT1116G-x-AE3-R
MMBT1116AL-x-AE3-R
MMBT1116AG-x-AE3-R

2
Package
SOT-23
SOT-23
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
MARKING
11A
L: Lead Free
G: Halogen Free
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Copyright © 2014 Unisonic Technologies Co., LTD
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
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C,unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
-60
Collector to Base Voltage
VCBO
V
-80
-50
Collector to Emitter Voltage
VCEO
V
-60
Emitter to Base Voltage
VEBO
-6
V
DC
IC
-1
A
Collector Current
Pulse(Note2)
ICM
-2
A
Total Power Dissipation
PC
350
mW
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≦10ms, Duty cycle≦50%
MMBT1116
MMBT1116A
MMBT1116
MMBT1116A

ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified.)
PARAMETER
Collector-Emitter Saturation
Voltage(Note)
Base-Emitter Saturation Voltage(Note)
Base Emitter On Voltage(Note)
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
VCE(SAT)
IC=-1A, IB=-50mA
VBE(SAT)
VBE(ON)
ICBO
IEBO
IC=-1A, IB=-50mA
VCE=-2V, IC=-50mA
VCB=-60V, IE=0
VEB=-6V, IC=0
MMBT1116
VCE=-2V,
IC=-100mA
MMBT1116A
VCE=-2V, IC=-1A
VCE=-2V, IC=-100mA
VCB=-10V, IE=0, f=1MHz
VCC=-10V, IC=-100mA
IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V
hFE1
DC Current Gain(Note)
TEST CONDITIONS
Transition Frequency
Output Capacitance
hFE2
fT
Cob
Turn On Time
tON
Storage Time
tSTG
Fall Time
tF
Note: Pulse Test: Pulse width≦350μs, Duty cycle≦2%

MIN
TYP
MAX
-0.2
-600
135
135
81
70
-0.9
-650
UNIT
V
-1.2
-700
-100
-100
600
400
V
mV
nA
nA
120
25
MHz
pF
0.07
μs
0.7
0.07
μs
μs
CLASSIFICATION OF hFE1
RANK
hFE1
Y
135 ~ 270
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
G
200 ~ 400
L
300 ~ 600
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TYPICAL CHARACTERISTICS
Static Characteristic
IB=-250μA
IB=-150μA
-60
IB=-100μA
-40
IB=-50μA
-20
0
0
-0.8
DC Current Gain
VCE=-2V
100
10
1
-0.01
-0.1
-1
Collector Current, Ic (mA)
-10
IB=-3.0mA
IB=-2.5mA
-0.6
IB=-2.0mA
IB=-1.5mA
-0.4
IB=-1.0mA
-0.2
IB=-0.5mA
0.0
0.0
-4
-8
-10
-2
-6
Collector-Emitter Voltage, VCE (V)
1000
DC Current Gain, hFE
Collector Current, Ic (A)
IB=-200μA
-80
Static Characteristic
IB=-5.0mA IB=-4.5mA IB=-4.0mA
IB=-3.5mA
-1.0
Saturation Voltage, VBE(sat), VCE(sat) (V)
Collector Current, Ic (mA)
-100
-10
-0.2 -0.4
-0.6 -0.8
-1.0
Collector-Emitter Voltage, VCE (V)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-1
IC=20IB
VBE(sat)
-0.1
-0.01
-0.01
VCE(sat)
-0.1
-1
Collector Current, IC (A)
-10
Capacitance, Cob (pF)
Time, tON, tSTG, tF (μs)

PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS(Cont.)
1000
Current Gain Bandwidth Product
VCE=-2V
-10
10
-1
100
10
-0.1
1
-0.01
-0.1
-10
-1
Collector Current, IC (mA)
Safe Operating Area
-0.01
-1
m
s
PW
200ms
=1
m
s
DC
-10
-100
Collector-Emitter Voltage, VCE (V)
Power Dissipation, PC (W)

PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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