IXYS IXFN360N10T Gigamos trench hiperfet power mosfet Datasheet

IXFN360N10T
GigaMOSTM Trench
HiperFETTM
Power MOSFET
VDSS
ID25
=
=
≤
≤
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
miniBLOC, SOT-227
E153432
S
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 175°C
100
V
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
100
V
G
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C (Chip Capability)
360
A
ILRMS
IDM
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
200
900
A
A
IA
EAS
TC = 25°C
TC = 25°C
100
3
A
J
PD
TC = 25°C
830
W
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
20
V/ns
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
Md
Mounting Torque
Terminal Connection Torque
t = 1 Minute
t = 1 Second
Weight
S
D
G = Gate
S = Source
Features
z
z
z
z
z
z
Characteristic Values
Min.
Typ . Max.
BVDSS
VGS = 0V, ID = 1mA
100
VGS(th)
VDS = VGS, ID = 3mA
2.5
IGSS
z
Easy to Mount
Space Savings
High Power Density
Applications
V
4.5
V
VGS = ±20V, VDS = 0V
±200
nA
IDSS
VDS = VDSS, VGS = 0V
25
2.5
μA
mA
RDS(on)
VGS = 10V, ID = 100A, Note 1
© 2009 IXYS CORPORATION, All Rights Reserved
International Standard Package
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
Fast Intrinsic Rectifier
Low RDS(on)
Advantages
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
z
TJ = 150°C
100V
360A
Ω
2.6mΩ
130ns
2.6 mΩ
z
z
z
z
z
z
z
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
DS100088A(10/09)
IXFN360N10T
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 10V, ID = 60A, Note 1
110
180
S
33
nF
3160
pF
400
pF
1.20
Ω
47
ns
100
ns
80
ns
160
ns
525
nC
145
nC
165
nC
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
td(on)
tr
td(off)
tf
Gate Input Resistance
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
Qg(on)
Qgs
SOT-227B (IXFN) Outline
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
(M4 screws (4x) supplied)
0.18 °C/W
RthJC
RthCS
0.05
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = 100A, VGS = 0V, Note 1
trr
IRM
IF = 100A, VGS = 0V
QRM
-di/dt = 100A/μs
VR = 50V
360
A
1440
A
1.2
V
130
6.60
ns
A
0.33
μC
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFN360N10T
Fig. 2. Extended Output Characteristics @ T J = 25ºC
Fig. 1. Output Characteristics @ T J = 25ºC
360
400
VGS = 15V
10V
8V
7V
300
7V
300
240
6V
ID - Amperes
ID - Amperes
VGS = 15V
10V
8V
350
180
5.5V
120
6V
250
200
150
5.5V
100
5V
5V
60
50
4V
4V
0
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0
0.5
1.0
1.5
VDS - Volts
360
3.0
3.5
2.6
VGS = 15V
10V
8V
7V
VGS = 10V
R DS(on) - Normalized
2.2
240
ID - Amperes
2.5
Fig. 4. RDS(on) Normalized to ID = 180A Value
vs. Junction Temperature
Fig. 3. Output Characteristics @ T J = 150ºC
300
2.0
VDS - Volts
6V
180
5V
120
60
I D = 360A
1.8
I D = 180A
1.4
1.0
0.6
4V
0
0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Normalized RDS(on) vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
3.0
175
220
VGS = 10V
200
2.6
External Lead Current Limit
180
TJ = 175ºC
160
2.2
ID - Amperes
R DS(on) - Normalized
-25
VDS - Volts
1.8
1.4
140
120
100
80
60
TJ = 25ºC
40
1.0
20
0.6
0
0
40
80
120
160
200
240
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
280
320
360
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXFN360N10T
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
350
TJ = - 40ºC
180
300
160
250
g f s - Siemens
ID - Amperes
140
120
TJ = 150ºC
100
25ºC
80
- 40ºC
60
25ºC
200
150ºC
150
100
40
50
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
20
40
60
80
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
120
140
160
180
200
500
550
Fig. 10. Gate Charge
10
320
VDS = 50V
9
280
I D = 180A
8
240
I G = 10mA
7
200
VGS - Volts
IS - Amperes
100
ID - Amperes
160
120
TJ = 150ºC
6
5
4
3
80
2
TJ = 25ºC
40
1
0
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1.1
50
100
150
200
250
300
350
400
450
QG - NanoCoulombs
VSD - Volts
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1,000
100.0
RDS(on) Limit
100µs
100
10.0
External Lead Limit
ID - Amperes
Capacitance - NanoFarads
25µs
Ciss
Coss
1ms
10
1.0
TJ = 175ºC
Crss
f = 1 MHz
10ms
TC = 25ºC
Single Pulse
DC
100ms
1
0.1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1
10
VDS - Volts
100
IXFN360N10T
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
280
320
RG = 1Ω , VGS = 10V
RG = 1Ω , VGS = 10V
280
VDS = 50V
I
D
= 200A
t r - Nanoseconds
240
t r - Nanoseconds
VDS = 50V
240
200
160
120
I
D
200
TJ = 125ºC
160
TJ = 25ºC
120
= 100A
80
80
40
40
25
35
45
55
65
75
85
95
105
115
40
125
60
80
100
TJ - Degrees Centigrade
700
300
90
200
60
100
30
0
4
5
6
7
8
9
90
I D = 200A
200
80
I D = 100A
70
100
25
10
35
45
55
65
75
85
95
105
115
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
td(off) - - - -
600
110
TJ = 125ºC
200
100
150
90
TJ = 25ºC
100
80
50
70
550
VDS = 50V
120
250
td(off) - - - -
TJ = 125ºC, VGS = 10V
500
450
400
350
I D = 200A
300
250
I D = 100A
200
0
40
60
80
100
120
140
160
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
180
60
200
150
100
50
1
2
3
4
5
6
RG - Ohms
7
8
9
10
t d(off) - Nanoseconds
VDS = 50V
650
tf
130
t f - Nanoseconds
tf
RG = 1Ω, VGS = 10V
60
125
700
140
t d(off) - Nanoseconds
t f - Nanoseconds
250
RG - Ohms
400
300
100
150
0
3
t f - Nanoseconds
120
I D = 100A
300
t d(off) - Nanoseconds
150
400
350
110
VDS = 50V
I D = 200A
2
200
td(off) - - - -
RG = 1Ω, VGS = 10V
350
t d(on) - Nanoseconds
t r - Nanoseconds
180
TJ = 125ºC, VGS = 10V
1
180
120
tf
td(on) - - - -
VDS = 50V
500
160
400
210
600
140
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
tr
120
ID - Amperes
IXFN360N10T
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximum Transient Thermal Impedance
.sadgsfgsf
0.300
Z (th)JC - ºC / W
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_360N10T(8V)9-23-09
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