IXFN360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 100 V G VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C (Chip Capability) 360 A ILRMS IDM Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM 200 900 A A IA EAS TC = 25°C TC = 25°C 100 3 A J PD TC = 25°C 830 W dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque t = 1 Minute t = 1 Second Weight S D G = Gate S = Source Features z z z z z z Characteristic Values Min. Typ . Max. BVDSS VGS = 0V, ID = 1mA 100 VGS(th) VDS = VGS, ID = 3mA 2.5 IGSS z Easy to Mount Space Savings High Power Density Applications V 4.5 V VGS = ±20V, VDS = 0V ±200 nA IDSS VDS = VDSS, VGS = 0V 25 2.5 μA mA RDS(on) VGS = 10V, ID = 100A, Note 1 © 2009 IXYS CORPORATION, All Rights Reserved International Standard Package 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. z TJ = 150°C 100V 360A Ω 2.6mΩ 130ns 2.6 mΩ z z z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100088A(10/09) IXFN360N10T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 110 180 S 33 nF 3160 pF 400 pF 1.20 Ω 47 ns 100 ns 80 ns 160 ns 525 nC 145 nC 165 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd (M4 screws (4x) supplied) 0.18 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IRM IF = 100A, VGS = 0V QRM -di/dt = 100A/μs VR = 50V 360 A 1440 A 1.2 V 130 6.60 ns A 0.33 μC Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN360N10T Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 360 400 VGS = 15V 10V 8V 7V 300 7V 300 240 6V ID - Amperes ID - Amperes VGS = 15V 10V 8V 350 180 5.5V 120 6V 250 200 150 5.5V 100 5V 5V 60 50 4V 4V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.5 1.0 1.5 VDS - Volts 360 3.0 3.5 2.6 VGS = 15V 10V 8V 7V VGS = 10V R DS(on) - Normalized 2.2 240 ID - Amperes 2.5 Fig. 4. RDS(on) Normalized to ID = 180A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 300 2.0 VDS - Volts 6V 180 5V 120 60 I D = 360A 1.8 I D = 180A 1.4 1.0 0.6 4V 0 0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Normalized RDS(on) vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 3.0 175 220 VGS = 10V 200 2.6 External Lead Current Limit 180 TJ = 175ºC 160 2.2 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 1.8 1.4 140 120 100 80 60 TJ = 25ºC 40 1.0 20 0.6 0 0 40 80 120 160 200 240 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 280 320 360 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFN360N10T Fig. 7. Input Admittance Fig. 8. Transconductance 200 350 TJ = - 40ºC 180 300 160 250 g f s - Siemens ID - Amperes 140 120 TJ = 150ºC 100 25ºC 80 - 40ºC 60 25ºC 200 150ºC 150 100 40 50 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 500 550 Fig. 10. Gate Charge 10 320 VDS = 50V 9 280 I D = 180A 8 240 I G = 10mA 7 200 VGS - Volts IS - Amperes 100 ID - Amperes 160 120 TJ = 150ºC 6 5 4 3 80 2 TJ = 25ºC 40 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 50 100 150 200 250 300 350 400 450 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 100.0 RDS(on) Limit 100µs 100 10.0 External Lead Limit ID - Amperes Capacitance - NanoFarads 25µs Ciss Coss 1ms 10 1.0 TJ = 175ºC Crss f = 1 MHz 10ms TC = 25ºC Single Pulse DC 100ms 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXFN360N10T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 280 320 RG = 1Ω , VGS = 10V RG = 1Ω , VGS = 10V 280 VDS = 50V I D = 200A t r - Nanoseconds 240 t r - Nanoseconds VDS = 50V 240 200 160 120 I D 200 TJ = 125ºC 160 TJ = 25ºC 120 = 100A 80 80 40 40 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 700 300 90 200 60 100 30 0 4 5 6 7 8 9 90 I D = 200A 200 80 I D = 100A 70 100 25 10 35 45 55 65 75 85 95 105 115 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance td(off) - - - - 600 110 TJ = 125ºC 200 100 150 90 TJ = 25ºC 100 80 50 70 550 VDS = 50V 120 250 td(off) - - - - TJ = 125ºC, VGS = 10V 500 450 400 350 I D = 200A 300 250 I D = 100A 200 0 40 60 80 100 120 140 160 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 180 60 200 150 100 50 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds VDS = 50V 650 tf 130 t f - Nanoseconds tf RG = 1Ω, VGS = 10V 60 125 700 140 t d(off) - Nanoseconds t f - Nanoseconds 250 RG - Ohms 400 300 100 150 0 3 t f - Nanoseconds 120 I D = 100A 300 t d(off) - Nanoseconds 150 400 350 110 VDS = 50V I D = 200A 2 200 td(off) - - - - RG = 1Ω, VGS = 10V 350 t d(on) - Nanoseconds t r - Nanoseconds 180 TJ = 125ºC, VGS = 10V 1 180 120 tf td(on) - - - - VDS = 50V 500 160 400 210 600 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 120 ID - Amperes IXFN360N10T Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximum Transient Thermal Impedance .sadgsfgsf 0.300 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_360N10T(8V)9-23-09