PD - 95144
IRFL4310PbF
HEXFET® Power MOSFET
l
l
l
l
l
l
l
Surface Mount
Dynamic dv/dt Rating
Fast Switching
Ease of Paralleling
Advanced Process Technology
Ultra Low On-Resistance
Lead-Free
D
VDSS = 100V
RDS(on) = 0.20Ω
G
ID = 1.6A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
S O T -2 2 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
2.2
1.6
1.3
13
2.1
1.0
8.3
± 20
47
1.6
0.10
5.0
-55 to + 150
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
Max.
Units
93
48
120
60
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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04/22/04
IRFL4310PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
100
––– –––
V
VGS = 0V, ID = 250µA
––– 0.12 ––– V/°C Reference to 25°C, I D = 1mA
––– ––– 0.20
Ω
VGS = 10V, ID = 1.6A
2.0
1.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 4.0
––– –––
––– 25
––– 250
––– 100
––– -100
17
25
2.1 3.1
7.8
12
7.8 –––
18 –––
34
–––
20
–––
330 –––
92 –––
54 –––
V
S
µA
nA
nC
ns
pF
VDS = VGS, ID = 250µA
VDS = 50V, ID = 0.80 A
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
ID = 1.6A
VDS = 80V
VGS = 10V, See Fig. 6 and 13
VDD = 50V
ID = 1.6A
RG = 6.2 Ω
RD = 31 Ω, See Fig. 10
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
0.91
–––
–––
13
–––
–––
–––
–––
72
210
1.3
110
320
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 1.6A, VGS = 0V
TJ = 25°C, IF = 1.6A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 9.2 mH
RG = 25Ω, IAS = 3.2A. (See Figure 12)
2
ISD ≤ 1.6A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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IRFL4310PbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HE XF E T PRODUCT MARKING
T HIS IS AN IRF L014
INT E RNAT IONAL
RE CT IF IE R
L OGO
PAR T NUMB E R
F L014
314P
T OP
8
L OT CODE
AXXXX
A = AS S E MB L Y S IT E
DAT E CODE
CODE
(YYWW)
YY = YE AR
WW = WE E K
P = DE S IGNAT E S LE AD-F RE E
PRODUCT (OPT IONAL)
B OT T OM
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IRFL4310PbF
SOT-223 (TO-261AA) Tape & Reel Information
2 .0 5 (.08 0)
1 .9 5 (.07 7)
TR
4 .1 0 (.1 6 1)
3 .9 0 (.1 5 4)
0 .3 5 (.0 13 )
0 .2 5 (.0 10 )
1 .8 5 (.07 2 )
1 .6 5 (.06 5 )
7 .55 (.2 97 )
7 .45 (.2 94 )
1 6.30 (.6 4 1)
1 5.70 (.6 1 9)
7 .60 (.2 99 )
7 .40 (.2 92 )
1 .60 (.06 2)
1 .50 (.05 9)
TYP.
F E E D D IR E C T IO N
2.3 0 (.0 9 0)
2.1 0 (.0 8 3)
7 .10 (.2 79 )
6 .90 (.2 72 )
1 2.1 0 (.47 5 )
1 1.9 0 (.46 9 )
NO TE S :
1. C O N T R O LL IN G D IM E N S IO N : MIL L IM E T E R .
2. O U T LIN E C O N F O R M S T O E IA -4 81 & E IA -5 41 .
3. E A C H O 330 .0 0 (13 .0 0) R E E L C O N T A IN S 2, 50 0 D E V IC E S .
13 .2 0 (.5 1 9)
12 .8 0 (.5 0 4)
1 5.40 (.60 7)
1 1.90 (.46 9)
4
3 3 0.0 0
(13 .0 00 )
M AX.
5 0.00 (1 .9 6 9)
M IN .
N OTES :
1. O U T LIN E C O M F O R M S T O E IA -4 18 -1 .
2. C O N T R O LL IN G D IM E N S IO N : M ILL IM E T E R ..
3. D IM E N S IO N M E A S U R E D @ H U B .
4. IN C L U D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E .
1 8 .4 0 (.72 4)
M AX.
14 .4 0 (.56 6 )
12 .4 0 (.48 8 )
3
4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04
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