M61018GP MOTOR DRIVER FOR CAMERA REJ03F0071-0100Z Rev.1.0 Sep.19.2003 Description M61018GP is a semiconductor integrated circuit built-in motor driver for compact camera All power transistors which have been used as external parts so far are built in by using minute bi-polar process ,so it contributes to reduction of the part cost and the miniaturization of the system . Features • • • • Built-in DC/DC converter (Presser type,TYP 5.0V) Built-in Regulator circuit for Auto Focus (Depressor type,TYP 4.1V) Built-in IRED drive circuit (TYP Io=1A) Built-in DC motor driver circuit of 1.5CH Application Motor driver for compact camera etc. Recommend Operating Condition Rated supply voltage·······································3.0V Supply voltage range·······································1.8 to 3.5V Pin Configuration 24 23 22 21 20 19 18 17 VCH 25 CT 26 VDD 27 SGND 28 NC 29 SH 15 BF4CON T VBMON VB1 14 M61018GP VREF 30 VAF 31 VWL2 32 1 2 3 4 5 6 Outline Rev.1.0, Sep.19.2003, page 1 of 17 16 7 8 32P6B 13 12 11 SML1 10 9 SML3 SML2 NC M61018GP Block Diagram VWL VWL SML SML SML SML 2 1 4 3 2 1 VBMON CT 14 26 32 1 8 10 11 VB2 VB1 12 13 4 NC NC 9 29 VCH 25 DC/DC Circuit Battery Check Circuit Oscillator VDD DC motor drive 27 VB VDD 31 VAF Control Logic M 5 M OUT3 3 Regulator Circuit VB Lensdrive Shutter drive SH VREF BF4CONT 7 OUT2 30 15 Film widing OUT1 Buffer driver BF4 20 BF4 Buffer driver BF3 Buffer driver BF2 Buffer driver BF1 19 21 23 VB VB LED BF3 VB LED BF2 VB Red -eye IRED BF1 16 Shutter drive SRICONT 17 28 18 22 24 2 6 SGND PGND PGND PGND PGND PGND 5 4 3 2 1 Absolute Maximum Ratings (Ta=25°C, unless otherwise noted) Parameter Symbol Ratings Unit Remark Supply voltage Supply voltage VB VDD 4.0 6.0 V V note1 note1 Power dissipation Thermal derating Pd Kθ 550 4.4 mW mW/ °C Ta=25°C Ta≥25°C Pin input voltage Another pin VIF VI/O 6.0 0 to VDD+0.3 V V 3,4,11,12,13,14,17pin note2 Operating temperature Storage temperature Topr Tstg - 20 to 60 - 40 to 150 °C °C Rev.1.0, Sep.19.2003, page 2 of 17 M61018GP Thermal Derating (Maximum Rating) POWER DISSIPATION Pd (mW) 700 600 - 4.4mW/˚C 500 400 300 200 100 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (˚C) Rev.1.0, Sep.19.2003, page 3 of 17 120 140 160 M61018GP Electrical Characterristics (Ta=25°C,VB=3.0V,unless otherwise noted) Limits Classification Parameter Symbol Operating supply VB Test condition min typ max Unit 1.8 3.0 3.5 V Note voltage range Consuming While STAND BY current consuming current While STAND BY IB1 VWL1:H,VWL2:H 5.0 µA IDD1 VWL1:H,VWL2:H 5.0 µA IDD2 Consuming current When driver don't 5.0 10.0 mA 1.8 V *1 consuming current Usual consuming current operate (Operating only DC/DC converter) DC/DC Operating start voltage Vstart VB voltage converter Operating stop voltage Vstop VB voltage 1.0 V *1 Oscillation frequency fosc C=330pF 35K 50K 65K Hz *1 DUTY duty 66 78 90 % *1 Output voltage ∆Vout VDD voltage 4.5 5.0 5.5 V *1 Input stability ∆Vout1 VB=2.0 to 3.3V Iout=50mA 100 mV *1 Load stability ∆Vout2 VB=2.85V Iout=0 to 100mA 100 mV *1 Maximum output Iout VB=2.85V Vout≥4.5V 100 mA *1 Output voltage VAF VDD=4.5 to 5.5V IAF=50mA 3.90 4.10 4.30 V Load stability ∆VAF VDD=5V IAF=0 to 20mA -10 10 mV Ripple voltage Vrip VB=2.85V VDD ≥4.5V 0 10 MVP-P current Regulator Response time TAF CVAF=10µF CVREF=0.1µF 0 10 ms DC Operating voltage VB(DC motor) VB voltage 1.6 3.5 V motor driver Maximum output Iomax t=10S 1.8 A 500 mA 0 0.5 V 1.5 V current Continual maximum Iocont output current Output saturation Vsat(DC voltage motor) Io=500mA Upper side+Lower side Spark killer diode VSF(DC forward voltage motor) Overheat protection Taohp 135 150 165 °C ∆Taohp 25 40 55 °C (saturation voltage total) Io=600mA circuit operating temperature Overheat protection hysteresis Shutter Operating voltage VB(shutter) VB voltage 1.6 3.5 V driver Simple output bias Isht1 1Ω Between SRICONT to GND 480 580 680 mA 700 mA current Maximum output Isht2 current Output saturation Vsat(shutter) Io=500mA SRICONT=0V 0.5 V VSF(shutter) Io=600mA 1.5 V voltage Spark killer diode forward voltage Note : *1 L=47µH, CVDD=100µF Rev.1.0, Sep.19.2003, page 4 of 17 M61018GP Electrical Characterristics (cont.) (Ta=25°C,VB=3.0V,unless otherwise noted) Limits Classification Parameter Symbol Test condition min typ max Unit Buffer1 Operating voltage VB(BF1) VB voltage 1.6 3.5 V Maximum output Ibf1 t=1S 2.0 A Vsat(BF1) Io=1A 0.5 V current Output saturation voltage Buffer2 Operating voltage VB(BF2) VB voltage 1.6 3.5 V Maximum output Ibf2 t=1S 800 mA Vsat(BF2) Io=500mA 0.5 V current Output saturation voltage Buffer3 Operating voltage VB(BF3) VB voltage 1.6 3.5 V Maximum output Ibf3 t=1S 800 mA Vsat(BF3) Io=500mA 0.5 V Operating voltage VB(BF4) VB voltage Maximum output Ibf4 current Output saturation voltage Buffer4 1.6 3.5 V 150 mA current Vsat(BF4) Io =100mA 0.5 V Input current Ibf4cont BF4CONT=0V -70 -50 -30 µA H input voltage VinH 4.2 6.0 V L input voltage VinL Output voltage Vbc Output saturation voltage BC VB=1.6 to 3.5V 0 0.3 V 2/3VB 2/3VB 2/3VB V -0.15 Rev.1.0, Sep.19.2003, page 5 of 17 +0.15 Note M61018GP VWL truth table VWL1 VWL2 Output condition H H Output OFF condition H L Oscillation start (Oscillator ON) condition L L L H DC/DC converter (5V)output condition DC/DC&VAF regulator output condition VBMON output condition * It needs the interval over 2mS in case of moving from the oscillation on to the output condition of DC/DC converter. SML truth table INPUT Motor each output Buffer each output SML1 SML2 SML3 SML4 MOTOR1 MOTOR2 out1 out2 out3 SH BF1 BF2 BF3 Note H H H H Stand-by Stand-by OFF OFF OFF Stand-by OFF OFF OFF MOTOR1 H H H L Forward Stand-by H L OFF Stand-by OFF OFF OFF control H H L H Reverse Stand-by L H OFF Stand-by OFF OFF OFF Stand-by L L OFF Stand-by OFF OFF OFF rotation rotation H H L L Brake H L H H Stand-by Stand-by OFF OFF OFF Stand-by OFF OFF OFF MOTOR2 H L H L Stand-by Forward OFF H L Stand-by OFF OFF OFF control rotation H L L H Stand-by Reverse OFF L H Stand-by OFF OFF OFF H L L L Stand-by Brake OFF L L Stand-by OFF OFF OFF L H H H Stand-by Stand-by OFF OFF OFF Stand-by OFF OFF OFF L H H L Stand-by Stand-by OFF OFF OFF ON OFF OFF OFF L H L H Stand-by Stand-by OFF OFF OFF Stand-by ON OFF OFF BF1 L H L L Stand-by Stand-by OFF OFF OFF ON OFF OFF Shutter+BF1 Shutter control L L H H Stand-by Stand-by OFF OFF OFF Stand-by OFF OFF OFF L L H L Stand-by Stand-by OFF OFF OFF Stand-by OFF ON OFF BF2 L L L H Stand-by Stand-by OFF OFF OFF Stand-by OFF OFF ON BF3 L L L L Stand-by Stand-by OFF OFF OFF Stand-by OFF ON ON BF2+BF3 * Please pass through the Brake or Stand-by mode by all means in case of moving from forward rotation to Reverse rotation or from Reverse rotation to forward rotation by the motor control. (ex.)Forward rotation --> Brake --> Reverse rotation, Reverse rotation-->Stand-by --> Forward rotation BF4 truth table Input Output BF4CONT BF4 H L OFF L Rev.1.0, Sep.19.2003, page 6 of 17 M61018GP Sequence Time Chart Example Input signal VB VWL1 VWL2 Output signal VDD VAF IC control content Oscillator Control SW 1mS 2mS 5mS Regulator(VAF) : ON DC/DC converter(VDD) : ON Oscillator : ON Rev.1.0, Sep.19.2003, page 7 of 17 M61018GP Description of Pin Ta=25°C PIN PIN PERIPHERAL NO. NAME CIRCUIT OF PINS 1 VWL1 Limits Parameter VDD VINH (INPUT) typ max Unit VDD 6.0 V 0.3 V NOTE -0.3 VINL PGND5 2 min 0 IINH 3.0 µA VIH=5.5V IINL -70 -45 -25 µA VIL=0V IOUT 1.8 A VB=3.0V VSAT 0.5 V Io=500mA Upper side+Lower side PGND2 PGND2 3 OUT3 VDD VB2 (saturation voltage total) PGND2 4 VB2 VB2 5 OUT2 VDD VB2 IOUT 1.8 A VB=3.0V VSAT 0.5 V Io=500mA Upper side+Lower side (saturation voltage total) PGND1 6 PGND1 PGND1 7 OUT1 VDD VB1 IOUT 1.8 A VB=3.0V VSAT 0.5 V Io=500mA Upper side+Lower side (saturation voltage total) PGND1 Rev.1.0, Sep.19.2003, page 8 of 17 M61018GP Description of Pin (cont.) Ta=25°C PIN PIN PERIPHERAL NO. NAME CIRCUIT OF PINS 8 SML4 Limits Parameter VDD (INPUT) min typ max Unit VINH 2.0 6.0 V VINL 0 0.3 V NOTE IINH 3.0 µA VIH=5.5V IINL -60 -40 -20 µA VIL=0V VINH 2.0 6.0 V 0.3 V PGND5 9 NC 10 SML3 VDD (INPUT) VINL IINH 3.0 µA VIH=5.5V IINL -60 -40 -20 µA VIL=0V VINH 2.0 6.0 V 0.3 V PGND5 11 SML2 VDD (INPUT) VINL IINH 3.0 µA VIH=5.5V IINL -60 -40 -20 µA VIL=0V VINH 2.0 6.0 V VINL 0 0.3 V PGND5 12 SML1 VDD (INPUT) IINH 3.0 µA VIH=5.5V IINL -60 -40 -20 µA VIL=0V VOUT 2/3VB 2/3VB 2/3VB V VB=1.6 to 3.5V PGND5 13 VB1 VB1 14 VBMON VB1 -0.15 PGND1 Rev.1.0, Sep.19.2003, page 9 of 17 +0.15 M61018GP Description of Pin (cont.) Ta=25°C PIN PIN PERIPHERAL NO. NAME CIRCUIT OF PINS 15 BF4CONT Limits Parameter VDD (INPUT) min typ max Unit VINH 4.2 6.0 V VINL 0 0.3 V NOTE IINH 3.0 µA VIH=5.5V IINL -70 -45 -25 µA VIL=0V IOUT 700 mA VB=3.0V VSAT 0.5 V Io=500mA SRICONT=0V IOUT 700 mA VB=3.0V VOUT 480 580 680 mV 1Ω Between SRICONT to GND PGND5 16 SH VB1 PGND5 17 SRICONT VB1 PGND5 18 PGND5 PGND5 19 BF3 IOUT 800 mA VB=3.0V VSAT 0.5 V Io=500mA IOUT 150 mA VB=3.0V VSAT 0.5 V Io=100mA IOUT 800 mA VB=3.0V VSAT 0.5 V Io=500mA PGND5 20 BF4 PGND5 21 BF2 PGND4 Rev.1.0, Sep.19.2003, page 10 of 17 M61018GP Description of Pin (cont.) Ta=25°C PIN PIN PERIPHERAL NO. NAME CIRCUIT OF PINS Limits 22 PGND4 Parameter min typ max Unit NOTE IOUT 2 A VB=3.0V VSAT 0.5 V Io=1A IOUT 1 A VB=3.0V IOUT1 2.5 5.0 10.0 µA DISCHARGE CURRENT IOUT2 -45 -30 -15 µA CHARGE CURRENT VOUT 4.5 5.0 5.5 V PGND4 23 BF1 PGND4 24 PGND3 PGND3 25 VCH VDD PGND3 26 CT VDD PGND5 PGND3 27 VDD VDD 28 SGND SGND Rev.1.0, Sep.19.2003, page 11 of 17 M61018GP Description of Pin (cont.) Ta=25°C PIN PIN PERIPHERAL NO. NAME CIRCUIT OF PINS Limits 29 NC 30 VREF VDD Parameter min typ max Unit VOUT 1.5 1.6 1.7 V VOUT 3.9 4.1 4.3 V VDD 6.0 V NOTE PGND2 SGND 31 VAF VDD VDD=4.5 to 5.5V IL=0 to 50mA PGND2 SGND 32 VWL2 VDD VINH (INPUT) -0.3 PGND2 Rev.1.0, Sep.19.2003, page 12 of 17 VINL 0 0.3 V IINH 3.0 µA VIH=5.5V IINL -70 -45 -25 µA VIL=0V M61018GP Application Example MICON A/D C4 BATTERY VWL VWL SML SML SML SML 2 1 4 3 2 1 VBMON CT MICON PORT 14 26 32 1 8 10 11 VB2 VB1 12 13 4 NC NC 9 29 VCH 25 L1 D1 DC/DC Circuit Oscillator Battery Check Circuit VDD DC motor drive 27 C1 C5 VDD Control Logic VB C2 31 VAF MICON PORT M M 3 VB Buffer driver BF4 20 BF4 Buffer driver BF3 Buffer driver BF2 19 21 23 VB VB LED IMAX=100mA LED IMAX=500mA BF3 VB BF2 VB Red -eye IMAX=500mA IRED BF1 Shutter drive 16 Shutter drive SRICONT 17 28 18 22 24 2 6 SGND PGND PGND PGND PGND PGND 5 4 3 2 1 IMAX=2A C1:100µF ALUMINUM ELECTROLYTIC CAPACITOR + 2.2µF CERAMIC CAPACITOR C2:10µF TANTALUM OR ALUMINUM ELECTROLYTIC CAPACITOR C3:0.01µF CERAMIC CAPACITOR C4:330pF CERAMIC CAPACITOR C5:220µF ALUMINUM ELECTROLYTIC CAPACITOR L1:47µH(SUMIDA ELECTRIC CO.,LTD. :CDRH62B-470MC) D1:SCHOTTKY BARRIER DIODE(ROHM CO.,LTD.:RB461F) Note1:Please be separate, and connect SGND with Battery GND. Note2:Please be separate, and connect PGND3 with Battery GND. Rev.1.0, Sep.19.2003, page 13 of 17 Lensdrive R=1 to 3Ω SH Buffer driver BF1 R=1 to 3Ω 5 OUT3 VREF BF4CONT 15 7 OUT2 Regulator Circuit 30 C3 Film widing OUT1 R=1Ω,0.5W (Constant current by this Resistor) M61018GP Typical Performance Data (Ta=25°C) VDD VS. Io VAF VS. Io 5.20 4.2 VB=3V VDD=5V 4.1 5.10 4 5.00 4.90 3.9 4.80 3.8 4.70 3.7 0 20 40 60 Io (mA) 80 0 100 20 40 60 80 100 120 140 Io (mA) VDD VS.VB VAF VS. VDD 4.2 5.20 4.15 5.10 4.1 5.00 4.05 4.90 4 4.80 3.95 4.70 3.9 4 4.5 5 5.5 6 6.5 7 7.5 8 VBMON VS. VDD 5 4 3 2 1 0 2.2 2.6 3 2.2 2.6 VB (V) VDD (V) 1.8 1.8 3.4 VDD (V) Rev.1.0, Sep.19.2003, page 14 of 17 3.8 3 3.4 3.8 M61018GP BF1 Vo(sat) VS. Io BF2 Vo(sat) VS. Io 600 600 500 500 400 400 300 300 200 200 100 100 0 0 1 10 100 1 1000 10 Io(mA) 100 1000 Io(mA) BF3 Vo(sat) VS. Io BF4 Vo(sat) VS. Io 600 600 500 500 400 400 300 300 200 200 100 100 0 0 1 10 100 Io(mA) 1000 SH Vo(sat) VS. Io 600 500 400 300 200 100 0 1 10 100 Io(mA) Rev.1.0, Sep.19.2003, page 15 of 17 1000 1 10 100 Io(mA) 1000 M61018GP OUT1 low side Vo(sat) VS. Io OUT1 hi side Vo(sat) VS. Io 300 300 250 250 200 200 150 150 100 100 50 50 0 0 1 10 100 1000 1 10 Io(mA) 1000 OUT2 low side Vo(sat) VS. Io OUT2 hi side Vo(sat) VS. Io 300 100 Io(mA) 300 250 250 200 200 150 150 100 100 50 50 0 0 1 10 100 1000 1 10 100 1000 Io(mA) Io(mA) OUT3 low side Vo(sat) VS. Io OUT3 hi side Vo(sat) VS. Io 300 300 250 250 200 200 150 150 100 100 50 50 0 0 1 10 100 Io(mA) Rev.1.0, Sep.19.2003, page 16 of 17 1000 1 10 Io(mA) 100 1000 8 1 9 32 b x e HD D y M 16 25 24 JEDEC Code − F 17 E HE Weight(g) 0.17 A Detail F Lp L L1 Lead Mater ial Allo y 42 b2 I2 MD ME x y A3 A A1 A2 b c D E e HD HE L L1 Lp Symbol Dimension in Millimeters Min Nom Max 1.7 − − 0.1 0.2 0 1.4 − 0.3 0.35 0.45 0.105 0.125 0.175 6.9 7.0 7.1 6.9 7.0 7.1 0.8 − − 8.8 9.0 9.2 8.8 9.0 9.2 0.3 0.5 0.7 1.0 − − 0.45 0.6 0.75 − − 0.25 − 0.2 − − − 0.1 − 0˚ 10˚ − − 0.5 1.0 − − 7.4 − − 7.4 − − Recommended Mount P ad I2 MD Plastic 32pin 7✕7mm bod y LQFP e b2 EIAJ Package Code LQFP32-P-77-0.80 A2 Rev.1.0, Sep.19.2003, page 17 of 17 A1 ME 32P6B-A M61018GP Package Dimensions A3 c Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 © 2003. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 1.0