Fairchild FQPF10N60C 600v n-channel mosfet Datasheet

TM
FQP10N60C/FQPF10N60C
600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
•
•
•
•
•
•
9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
Low gate charge ( typical 44 nC)
Low Crss ( typical 18 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
●
◀
G!
G DS
TO-220
TO-220F
GD S
FQP Series
▲
●
●
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQP10N60C
- Continuous (TC = 100°C)
FQPF10N60C
600
Units
V
9.5
9.5 *
3.3
3.3 *
A
A
38
38 *
A
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
9.5
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
15.6
4.5
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
± 30
V
700
mJ
156
1.25
50
0.4
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
©2003 Fairchild Semiconductor Corporation
FQP10N60C
0.8
FQPF10N60C
2.5
Units
°C/W
Rev. B, October 2003
FQP10N60C/FQPF10N60C
QFET
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
600
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.7
VDS = 600 V, VGS = 0 V
--
--
1
µA
VDS = 480 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.75 A
--
0.6
0.73
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 4.75 A
--
8.0
--
S
--
1570
2040
pF
--
166
215
pF
--
18
24
pF
--
23
55
ns
--
69
150
ns
--
144
300
ns
--
77
165
ns
--
44
57
nC
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 9.5A,
RG = 25 Ω
(Note 4, 5)
VDS = 480 V, ID = 9.5A,
VGS = 10 V
(Note 4, 5)
--
6.7
--
nC
--
18.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
9.5
A
ISM
--
--
38
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 9.5 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
420
--
ns
Qrr
Reverse Recovery Charge
--
4.2
--
µC
VGS = 0 V, IS = 9.5 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 14.2mH, IAS = 9.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003
FQP10N60C/FQPF10N60C
Electrical Characteristics
FQP10N60C/FQPF10N60C
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
1
10
o
150 C
ID, Drain Current [A]
1
10
0
10
0
10
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-1
10
-1
10
0
2
1
10
o
-55 C
o
25 C
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1
1.5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
2.0
VGS = 10V
1.0
VGS = 20V
0.5
10
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
25℃
※ Note : TJ = 25℃
-1
0.0
0
5
10
15
20
25
30
35
10
0.2
0.4
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2500
1.0
1.2
1.4
12
Coss
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
500
VGS, Gate-Source Voltage [V]
2000
Capacitance [pF]
0.8
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
VDS = 120V
10
Ciss
1500
0.6
VSD, Source-Drain voltage [V]
VDS = 300V
VDS = 480V
8
6
4
2
※ Note : ID = 9.5A
0
-1
10
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
0
10
20
30
40
50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, October 2003
FQP10N60C/FQPF10N60C
Typical Characteristics
(Continued)
1.2
3.0
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 4.75 A
0.5
150
200
0.0
-100
-50
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
o
2
10
Operation in This Area
is Limited by R DS(on)
10 µs
Operation in This Area
is Limited by R DS(on)
2
10
10 µs
100 µs
100 µs
1
1 ms
10 ms
100 ms
1
10
ID, Drain Current [A]
ID, Drain Current [A]
10
DC
1 ms
10 ms
100 ms
DC
0
10
0
10
※ Notes :
※ Notes :
-1
o
10
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
2
10
3
10
10
-2
10
0
10
VDS, Drain-Source Voltage [V]
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP10N60C
Figure 9-2. Maximum Safe Operating Area
for FQPF10N60C
10
ID, Drain Current [A]
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003
(Continued)
0
D = 0 .5
0 .2
-1
10
※ N o te s :
1 . Z θ J C ( t) = 0 . 8 ℃ / W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .1
0 .0 5
0 .0 2
θ JC
(t), T h e r m a l R e s p o n s e
10
FQP10N60C/FQPF10N60C
Typical Characteristics
PDM
Z
0 .0 1
t1
s in g le p u ls e
-2
10
10
t2
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]
D = 0 .5
10
0
0 .2
※ N o te s :
1 . Z θ J C (t) = 2 .5 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .1
0 .0 5
10
-1
0 .0 2
θ JC
(t), T h e r m a l R e s p o n s e
Figure 11-1. Transient Thermal Response Curve for FQP10N60C
0 .0 1
Z
PDM
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF10N60C
©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003
FQP10N60C/FQPF10N60C
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2003 Fairchild Semiconductor Corporation
ID (t)
VDS (t)
VDD
tp
Time
Rev. B, October 2003
FQP10N60C/FQPF10N60C
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003
FQP10N60C/FQPF10N60C
Package Dimensions
(Continued)
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003
FQP10N60C/FQPF10N60C
Package Dimensions
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
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which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
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when properly used in accordance with instructions for use
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result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I5