HMC741ST89E v01.1209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 Typical Applications Features The HMC741ST89E is ideal for: P1dB Output Power: +18.5 dBm • Cellular/3G & WiMAX/4G Gain: 20 dB • Fixed Wireless & WLAN Output IP3: +42 dBm • CATV, Cable Modem & DBS Cascadable 50 Ohm I/Os • Microwave Radio & Test Equipment Single Supply: +5V • IF & RF Applications Industry Standard SOT89 Package Robust 1000V ESD, Class 1C Stable Current Over Temperature Active Bias Network Functional Diagram General Description The HMC741ST89E is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering 0.05 to 3 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +18.5 dBm output power. The HMC741ST89E offers 20 dB of gain with a +42 dBm output IP3 at 200 MHz, and can operate directly from a +5V supply. The HMC741ST89E exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components. Electrical Specifi cations, Vcc = 5V, TA = +25° C Parameter Min. Frequency Range Gain Max. Min. 150 19 20 Typ. Max. Min. 240 19 21 Typ. Max. Min. 50 - 1000 16 20 12 Typ. Max. Units 50 - 3000 MHz 19 dB Gain Flatness ±0.3 ±0.3 ±0.3 Gain Variation over Temperature 0.004 0.004 0.004 Input Return Loss 16 16 16 12 dB Output Return Loss 17 17 17 12 dB Reverse Isolation 25 25 25 26 dB 16 dBm dBm Output Power for 1 dB Compression (P1dB) 9 - 182 Typ. 16 18.8 16 18.8 16 18.8 ±2.6 0.01 0.004 14 dB 0.01 dB/ °C Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) 40.5 40.5 40.5 30 Noise Figure 2.5 2.5 2.5 2.5 dB Supply Current (Icq) 96 96 96 96 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC741ST89E v01.1209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz IF Band Performance Gain & Return Loss Gain vs. Temperature 9 30 25 20 S21 S11 S22 5 GAIN (dB) RESPONSE (dB) 10 0 -5 -10 20 15 +25C +85C -40C 10 -15 -20 5 -25 0 -30 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 0 1 Noise Figure vs. Temperature 0.4 0.6 FREQUENCY (GHz) 0.8 1 0.8 1 Output IP3 vs. Temperature 50 8 7 45 6 +25C +85C -40C 5 IP3 (dBm) NOISE FIGURE (dB) 0.2 4 3 40 35 +25C +85C -40C 30 2 25 1 0 20 0 0.2 0.4 0.6 0.8 0 1 0.2 0.4 0.6 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Vcc Output IP3 vs. Output Power 50 50 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 25 15 45 40 35 40 IP3 (dBm) IP3 (dBm) 45 35 30 25 20 15 4.5V 5.0V 5.5V 25 30 100MHz 400MHz 1GHz 10 5 0 20 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 -5 0 5 Pout (dBm) 10 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 15 9 - 183 HMC741ST89E v01.1209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Broadband Performance 9 Gain & Return Loss Gain vs. Temperature 25 30 20 25 S21 S11 S22 5 0 GAIN (dB) RESPONSE (dB) 10 -5 -10 15 +25C +85C -40C 10 -20 5 -25 -30 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 Gain vs. Vcc 0 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 -5 RETURN LOSS (dB) 20 15 4.5V 5.0V 5.5V 10 5 -10 -15 +25C +85C -40C -20 -25 -30 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 0 3 Output Return Loss vs. Temperature 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 2.5 3 Input Return Loss vs. Vcc 0 0 +25C +85C -40C -5 RETURN LOSS (dB) RETURN LOSS (dB) 0.5 Input Return Loss vs. Temperature 25 -5 -10 -15 -20 -25 -10 -15 4.5V 5.0V 5.5V -20 -25 -30 0 9 - 184 20 -15 GAIN (dB) DRIVER & GAIN BLOCK AMPLIFIERS - SMT 15 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC741ST89E v01.1209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Noise Figure vs. Temperature 0 NOISE FIGURE (dB) RETURN LOSS (dB) 7 4.5V 5.0V 5.5V -5 -10 -15 -20 -25 6 +25C +85C -40C 5 4 3 2 1 0 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Vcc 0 8 6 REVERSE ISOLATION (dB) 7 NOISE FIGURE (dB) 9 8 4.5V 5.0V 5.5V 5 4 3 2 1 0 -5 +25C +85C -40C -10 -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 0 3 0.5 1 FREQUENCY (GHz) 1.5 2 FREQUENCY (GHz) 2.5 3 2.5 3 Output IP3 vs. Temperature Reverse Isolation vs. Vcc 50 0 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Output Return Loss vs. Vcc 40 35 4.5V 5.0V 5.5V -10 IP3 (dBm) REVERSE ISOLATION (dB) 45 -5 -15 -20 30 25 20 +25C +85C -40C 15 10 -25 5 0 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 0.5 1 1.5 2 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 185 HMC741ST89E v01.1209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz 9 Output IP3 vs. Vcc Current vs. Temperature 140 50 45 CURRENT (mA) IP3 (dBm) 30 25 20 4.5V 5.0V 5.5V 15 10 100 80 60 5 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 20 15 15 +25C +85C -40C 10 4.75 5 VOLTAGE (V) 5.25 5.5 Psat vs. Temperature 20 Psat (dBm) P1dB (dBm) 40 4.5 3 P1dB vs. Temperature 5 +25C +85C -40C 10 5 0 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 Power Compression @ 500 MHz 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 Power Compression @ 2 GHz 25 Pout (dBm), GAIN (dB), PAE (%) 25 Pout (dBm), GAIN (dB), PAE (%) DRIVER & GAIN BLOCK AMPLIFIERS - SMT 35 20 Pout Gain PAE 15 10 5 0 -5 -20 9 - 186 +25C +85C -40C 120 40 -17 -14 -11 -8 -5 INPUT POWER (dBm) -2 1 20 15 Pout Gain PAE 10 5 0 -5 -20 -17 -14 -11 -8 -5 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com -2 1 HMC741ST89E v01.1209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Absolute Maximum Ratings +5.5 Vdc RF Input Power (RFIN) +10 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 10.22 mW/°C above 85 °C) 0.66 W Thermal Resistance (junction to lead) 97.83 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HMB) Class 1C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Collector Bias Voltage (Vcc) Package Information Part Number Package Body Material Lead Finish HMC741ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H741 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 187 HMC741ST89E v01.1209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Pin Descriptions DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 9 - 188 Pin Number Function Description 1 IN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 OUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins and package bottom must be connected to RF/DC ground. Interface Schematic Application Circuit For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC741ST89E v01.1209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Evaluation PCB List of Materials for Evaluation PCB 124390 [1] Item Description J1, J2 PCB Mount SMA Connector J3, J4 DC Pin C1, C2 470 pF Capacitor, 0402 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 μF Capacitor Tantalum L1 820 nH Inductor, 0603 Pkg. U1 HMC741ST89E PCB [2] 119392 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: FR4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 189