Altera HC332 Hardcopy iii device Datasheet

Section I. HardCopy III Device Datasheet
This section provides the datasheet for the HardCopy ® III device family. This section
includes the following chapter:
■
Chapter 1, DC and Switching Characteristics of HardCopy III Devices
Revision History
Refer to each chapter for its own specific revision history. For information on when
each chapter was updated, refer to the Chapter Revision Dates section, which appears
in the full handbook.
© December 2008
Altera Corporation
HardCopy III Device Handbook, Volume 3
i–2
HardCopy III Device Handbook, Volume 3
Section I: HardCopy III Device Datasheet
© December 2008
Altera Corporation
1. DC and Switching Characteristics of
HardCopy III Devices
HIII53001-2.0
Electrical Characteristics
This chapter provides information about the absolute maximum ratings,
recommended operating conditions, DC electrical characteristics, and other
specifications for HardCopy ® III devices. HardCopy III devices are offered in both
commercial and industrial grades.
Operating Conditions
When HardCopy III devices are implemented in a system, they are rated according to
a set of defined parameters. To maintain the highest possible performance and
reliability, you must consider the operating requirements described in this chapter.
HardCopy III devices are not speed binned like Stratix® III devices because
HardCopy III devices are designed and built to function at a target frequency based
on timing constraints, and operate at either commercial or industrial temperatures.
Absolute Maximum Ratings
Absolute maximum ratings define the maximum operating conditions for
HardCopy III devices. The values are based on experiments conducted with the
device and theoretical modeling of breakdown and damage mechanisms. The
functional operation of the device is not implied by these conditions. Conditions
beyond those listed in Table 1–1 can cause permanent damage to the device.
Additionally, device operation at the absolute maximum ratings for extended periods
of time can have adverse effects on the device.
Table 1–1. HardCopy III Device Absolute Maximum Ratings – Preliminary (Part 1 of 2) (Note 1)
Symbol
Parameter
Minimum
Maximum
Unit
VCCL
Core voltage power supply
–0.5
1.35
V
VCC
I/O registers power supply
–0.5
1.35
V
VCCD_PLL
PLL digital power supply
–0.5
1.35
V
VCCA_PLL
PLL analog power supply
–0.5
3.75
V
VCCPT (2)
Power supply for the temperature sensing
diode
–0.5
3.75
V
VCCPGM
Configuration pins power supply
–0.5
3.9
V
VCCPD
I/O pre-driver power supply
–0.5
3.9
V
VCCIO
I/O power supply
–0.5
3.9
V
VCC_CLKIN
Differential clock input power supply (top and
bottom I/O banks only)
–0.5
3.75
V
VCCBAT (3)
Battery back-up power supply for design
security volatile key register
—
—
V
VI
DC input voltage
–0.5
4.0
V
TJ
Operating junction temperature
–55
125
°C
IOUT
DC output current, per pin
–25
40
mA
© December 2008
Altera Corporation
HardCopy III Device Handbook, Volume 3
1–2
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Electrical Characteristics
Table 1–1. HardCopy III Device Absolute Maximum Ratings – Preliminary (Part 2 of 2) (Note 1)
Symbol
TSTG
Parameter
Storage temperature (no bias)
Minimum
Maximum
Unit
–65
150
°C
Notes to Table 1–1:
(1) Supply voltage specifications apply to voltage readings taken at the device pins and not the power supply.
(2) In Stratix III devices, this power supply is also used for programmable power technology.
(3) In HardCopy III devices, this power supply is not used.
Maximum Allowed Overshoot and Undershoot Voltage
During transitions, input signals may overshoot to the voltage shown in Table 1–2 and
undershoot to –2.0 V for input currents less than 100 mA and periods shorter than
20 ns.
Table 1–2 lists the maximum allowed input overshoot voltage. The maximum allowed
overshoot duration is specified as the percentage of high time over the lifetime of the
device. A DC signal is equivalent to 100% duty cycle.
Table 1–2. Maximum Allowed Overshoot During Transitions – Preliminary
Symbol
Vi (AC)
HardCopy III Device Handbook, Volume 3
Parameter
AC Input Voltage
Condition
Overshoot
Duration as % of
High Time
Unit
4
100.000
%
4.05
79.330
%
4.1
46.270
%
4.15
27.030
%
4.2
15.800
%
4.25
9.240
%
4.3
5.410
%
4.35
3.160
%
4.4
1.850
%
4.45
1.080
%
4.5
0.630
%
4.55
0.370
%
4.6
0.220
%
4.65
0.130
%
4.7
0.074
%
4.75
0.043
%
4.8
0.025
%
4.85
0.015
%
© December 2008
Altera Corporation
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Electrical Characteristics
1–3
Figure 1–1 shows the methodology to determine the overshoot duration. The
overshoot voltage is displayed in red and is present at the HardCopy III pin, up to
4.1 V. From Table 1–2, for an overshoot of up to 4.1 V, the percentage of high time for
overshoot > 3.15 V can be as high as 46% over an 11.4 year period. The percentage of
high-time is calculated as (delta T/T) × 100. This 11.4 year period assumes the device
is always turned on with 100% I/O toggle rate and 50% duty cycle signal. For lower
I/O toggle rates and situations where the device is in an idle state, lifetimes are
increased.
Figure 1–1. Overshoot Duration
4.1 V
3.15 V
3.0 V
ΔT
T
Recommended Operating Conditions
This section lists the functional operation limits for AC and DC parameters for
HardCopy III devices. The steady-state voltage and current values expected from
HardCopy III devices are provided in Table 1–3. All supplies are required to
monotonically reach their full-rail values within tRAMP maximum. Allowed ripple on
power supplies is bounded by the minimum and maximum specifications listed in
Table 1–3.
Table 1–3. HardCopy III Device Recommended Operating Conditions – Preliminary (Part 1 of 2)
Symbol
Parameter
Conditions
Minimum
Typical
Maximum
Unit
VCCL (1)
Core voltage power supply for
internal logic and input buffers
—
0.87
0.9
0.93
V
VCC (1)
I/O registers power supply
—
0.87
0.9
0.93
V
VCCD_PLL (1)
PLL digital power supply
—
0.87
0.9
0.93
V
VCCA_PLL
PLL analog power supply
—
2.375
2.5
2.625
V
VCCPT (2)
Power supply for the temperature
sensing diode
—
2.375
2.5
2.625
V
Configuration pins power supply,
3.0 V
—
2.85
3.0
3.15
V
Configuration pins power supply,
2.5 V
—
2.375
2.5
2.625
V
Configuration pins power supply,
1.8 V
—
1.71
1.8
1.89
V
VCCPGM
© December 2008
Altera Corporation
HardCopy III Device Handbook, Volume 3
1–4
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Electrical Characteristics
Table 1–3. HardCopy III Device Recommended Operating Conditions – Preliminary (Part 2 of 2)
Symbol
Parameter
Conditions
Minimum
Typical
Maximum
Unit
I/O pre-driver power supply, 3.0 V
—
2.85
3.0
3.15
V
I/O pre-driver power supply, 2.5 V
—
2.375
2.5
2.625
V
I/O power supply, 3.0 V
—
2.85
3.0
3.15
V
I/O power supply, 2.5 V
—
2.375
2.5
2.625
V
I/O power supply, 1.8 V
—
1.71
1.8
1.89
V
I/O power supply, 1.5 V
—
1.425
1.5
1.575
V
I/O power supply, 1.2 V
—
1.14
1.2
1.26
V
Differential clock input power
supply (top and bottom I/O banks
only)
—
2.375
2.5
2.625
V
VCC_CLKIN
Battery back-up power supply for
design security volatile key
register
—
—
—
—
V
VCCBAT (4)
VI
DC input voltage
—
–0.3
—
3.6
V
VO
Output voltage
—
0
—
VCCIO
V
0
—
85
°C
For industrial
use
–40
—
100
°C
Normal POR
(PORSEL=0)
50 µs
—
300 ms
—
Fast POR
(PORSEL=1)
50 µs
—
12 ms
—
VCCPD (3)
VCCIO
Operating junction temperature
TJ
tRAMP
Power supply ramp time
For
commercial
use
Notes to Table 1–3:
(1)
(2)
(3)
(4)
In Stratix III devices, V CCL can also be 1.1 V, while VCC and VCCD_PLL are 1.1 V. In HardCopy III devices, all three supplies are 0.9 V.
In Stratix III devices, this power supply is also used for programmable power technology.
VCCPD is either 2.5 V or 3.0 V. For a 3.0-V I/O standard, VCCPD = 3.0 V. For a 2.5 V or lower I/O standard, VCCPD = 2.5 V.
In HardCopy III devices, this power supply is not used.
DC Characteristics
This section lists the input pin capacitances, on-chip termination tolerance, and hot
socketing specifications.
Supply Current
Standby current is the current the device draws after the device enters user mode with
no inputs/outputs toggling and no activity in the device. Since these currents vary
largely with the resources used, use the Excel-based Early Power Estimator (EPE) to
get supply current estimates for your design.
HardCopy III Device Handbook, Volume 3
© December 2008
Altera Corporation
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Electrical Characteristics
1–5
Table 1–4 lists supply current specifications for VCC_CLKIN and VCCPGM. Use the EPE to get
supply current estimates for the remaining power supplies.
Table 1–4. Supply Current Specifications for VCC_CLKIN and VCCPGM – Preliminary (Note 1)
Symbol
Parameter
Min
Max
Unit
ICLKIN
VCC_CLKIN current specifications
0
TBD
mA
IPGM
VCCPGM current specifications
0
TBD
mA
Note to Table 1–4:
(1) Pending silicon characterization.
I/O Pin Leakage Current
Table 1–5 defines HardCopy III I/O pin leakage current specifications.
Table 1–5. HardCopy III I/O Pin Leakage Current – Preliminary (Note 1), (2)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
II
Input pin leakage current
VI = VC CIOM AX to 0 V
–10
—
10
μA
IOZ
Tri-stated I/O pin leakage
current
VO = VCC IOM AX to 0 V
–10
—
10
μA
Notes To Table 1–5:
(1) This value is specified for normal device operation. The value may vary during power up. This applies for all VCC IO
settings (3.0, 2.5, 1.8, 1.5, and 1.2 V).
(2) The 10 mA I/O leakage current limit is applicable when the internal clamping diode is off. A higher current is
observed when the diode is on.
On-Chip Termination (OCT) Specifications
If OCT calibration is enabled, calibration is automatically performed at power up for
I/Os connected to the calibration block. Table 1–6 lists the HardCopy III OCT
calibration block accuracy specifications.
Table 1–6. HardCopy III On-Chip Termination Calibration Accuracy Specifications – Preliminary (Part 1 of 2) (Note 1)
Calibration Accuracy
Symbol
Description
Conditions
Commercial (2)
Industrial
Unit
25−Ω RS 3.0/2.5
Internal series termination with calibration
(25-Ω setting)
VCC IO = 3.0/2.5 V
TBD
—
%
50−Ω RS 3.0/2.5
Internal series termination with calibration
(50-Ω setting)
VCC IO = 3.0/2.5 V
TBD
—
%
50−Ω RT 2.5
Internal parallel termination with calibration
(50-Ω setting)
VC CIO = 2.5 V
TBD
—
%
25−Ω RS 1.8
Internal series termination with calibration
(25-Ω setting)
VC CIO = 1.8 V
TBD
—
%
50−Ω RS 1.8
Internal series termination with calibration
(50-Ω setting)
VC CIO = 1.8 V
TBD
—
%
50−Ω RT 1.8
Internal parallel termination with calibration
(50-Ω setting)
VC CIO = 1.8 V
TBD
—
%
50−Ω RS 1.5
Internal series termination with calibration
(50-Ω setting)
VC CIO = 1.5 V
TBD
—
%
© December 2008
Altera Corporation
HardCopy III Device Handbook, Volume 3
1–6
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Electrical Characteristics
Table 1–6. HardCopy III On-Chip Termination Calibration Accuracy Specifications – Preliminary (Part 2 of 2) (Note 1)
Calibration Accuracy
Symbol
Description
Conditions
Commercial (2)
Industrial
Unit
50−Ω RT 1.5
Internal parallel termination with calibration
(50-Ω setting)
VC CIO = 1.5 V
TBD
—
%
50−Ω RS 1.2
Internal series termination with calibration
(50-Ω setting)
VC CIO = 1.2 V
TBD
—
%
50−Ω RT 1.2
Internal parallel termination with calibration
(50-Ω setting)
VC CIO = 1.2 V
TBD
—
%
Notes to Table 1–6:
(1) OCT calibration accuracy is valid at the time of calibration only.
(2) Pending silicon characterization.
The accuracy listed in Table 1–6 is valid at the time of calibration. If the voltage or
temperature changes, the termination resistance value varies. Table 1–7 lists the
resistance tolerance for HardCopy III on-chip termination.
Table 1–7. On-Chip Termination Resistance Tolerance Specification for I/Os – Preliminary (Note 1)
Resistance Tolerance
Symbol
Description
Commercial Max
Industrial Max
Unit
ROCT_UNCAL
Internal series termination without calibration
TBD
—
%
ROCT_CAL
Internal series termination with calibration
(2)
—
%
Notes to Table 1–7:
(1) Pending silicon characterization.
(2) For resistance tolerance after power-up calibration, refer to Table 1–8.
Table 1–8 lists OCT variation with temperature and voltage after power-up
calibration. Use Table 1–8 and Equation 1–1 to determine OCT variation without
re-calibration.
Equation 1–1.
dR
dR
R O CT = R CAL ⎛⎝ 1 + ------- × ΔT + ------- × ΔV ⎞⎠
dT
dV
1
Note that R CAL is calibrated on-chip termination at power-up. ΔT and ΔV are
variations in temperature and voltage (VCCIO) at power-up.
HardCopy III Device Handbook, Volume 3
© December 2008
Altera Corporation
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Electrical Characteristics
1–7
Table 1–8. On-Chip Termination Variation after Power-up Calibration – Preliminary (Note 1), (2)
Symbol
Description
OCT variation with voltage without
re-calibration
dR/dV
OCT variation with temperature without
re-calibration
dR/dT
VCC IO (V)
Commercial
Typical
Unit
3.0
TBD
%/mV
2.5
TBD
%/mV
1.8
TBD
%/mV
1.5
TBD
%/mV
1.2
TBD
%/mV
3.0
TBD
%/°C
2.5
TBD
%/°C
1.8
TBD
%/°C
1.5
TBD
%/°C
1.2
TBD
%/°C
Note to Table 1–8:
(1) Valid for VC CIO range of ± 5% and temperature range of 0° to 85° C.
(2) Pending silicon characterization.
Pin Capacitance
Table 1–9 shows the HardCopy III device family pin capacitance.
Table 1–9. HardCopy III Device Capacitance – Preliminary (Note 1)
Symbol
Parameter
Typical
Unit
CIOTB
Input capacitance on top and bottom I/O pins
TBD
pF
CIOLR
Input capacitance on left and right I/O pins
TBD
pF
CC LKTB
Input capacitance on top and bottom dedicated clock input pins
TBD
pF
CCLK LR
Input capacitance on left and right dedicated clock input pins
TBD
pF
COUTFB
Input capacitance on dual-purpose clock output and feedback pins
TBD
pF
Input capacitance for dedicated clock input pins
TBD
pF
CC LK1, CC LK3, CCLK8, and CCLK 10
Note to Table 1–9:
(1) Pending silicon characterization.
Hot Socketing
Table 1–10 lists the hot socketing specifications for HardCopy III devices.
Table 1–10. HardCopy III Hot Socketing Specifications – Preliminary (Note 1)
Symbol
Parameter
Maximum
IIOPIN(DC )
DC current per I/O pin
300 μA
IIOPIN(A C)
AC current per I/O pin
8 mA for ≤ 10 ns
Note to Table 1–10:
(1) Pending silicon characterization.
© December 2008
Altera Corporation
HardCopy III Device Handbook, Volume 3
1–8
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Electrical Characteristics
Internal Weak Pull-Up Resistor
Table 1–11 lists the weak pull-up resistor values for HardCopy III devices.
Table 1–11. HardCopy III Internal Weak Pull-Up Resistor – Preliminary (Note 1), (2)
Symbol
RPU
Parameter
Value of I/O pin pull-up resistor
before and during user mode, if the
pull-up resistor option is enabled
Conditions
Min
Typ
Max
Unit
VCCIO = 3.0 V ± 5% (3)
—
25
—
kΩ
VCCIO = 2.5 V ± 5% (3)
—
25
—
kΩ
VCCIO = 1.8 V ± 5% (3)
—
25
—
kΩ
VCCIO = 1.5 V ± 5% (3)
—
25
—
kΩ
VCCIO = 1.2 V ± 5% (3)
—
25
—
kΩ
Notes to Table 1–11:
(1) Pending silicon characterization.
(2) All I/O pins have an option to enable weak pull-up except test and JTAG pins.
(3) Pin pull-up resistance values may be lower if an external source drives the pin higher than VCCIO.
I/O Standard Specifications
Table 1–12 through Table 1–17 list input voltage sensitivities (VIH and VIL), output
voltage (VOH and VOL), and current drive characteristics (IOH and IOL) for all I/O
standards supported by HardCopy III devices. Refer to Table 1–33 on page 1–21 for an
explanation of terms used in Table 1–12 through Table 1–17. VOL and VOH values are
valid at the corresponding IOL and IOH , respectively.
Table 1–12. Single-Ended I/O Standards Specifications — Preliminary
VCC IO (V)
VIL (V)
VIH (V)
VO L (V)
VO H (V)
I/O Standard
Min
Typ
Max
Min
Max
Min
Max
Max
Min
IOL (mA)
IOH (mA)
3.0-V LVTTL
2.85
3
3.15
–0.3
0.8
1.7
3.6
0.4
2.4
2
–2
3.0-V
LVCMOS
2.85
3
3.15
–0.3
0.8
1.7
3.6
0.2
VCC IO –
0.2
0.1
–0.1
2.375
2.5
2.625
–0.3
0.7
1.7
3.6
0.2
2.1
0.1
–0.1
2.5
2.625
–0.3
0.7
1.7
3.6
0.4
2
1
–1
2.5
2.625
–0.3
0.7
1.7
3.6
0.7
1.7
2
–2
2.5V LVTTL/
LVCMOS
1.8V LVTTL/
LVCMOS
1.71
1.8
1.89
–0.3
0.35 ×
VC CIO
0.65 ×
VCC IO
VC CIO +
0.3
0.45
VCC IO –
0.45
2
–2
1.5 V LVTTL/
LVCMOS
1.425
1.5
1.575
–0.3
0.35 ×
VC CIO
0.65 ×
VCC IO
VC CIO +
0.3
0.25 ×
VC CIO
0.75 ×
VCC IO
2
–2
1.2V LVTTL/
LVCMOS
1.14
1.2
1.26
–0.3
0.35 ×
VC CIO
0.65 ×
VCC IO
VC CIO +
0.3
0.25 ×
VC CIO
0.75 ×
VCC IO
2
–2
2.85
3
3.15
—
0.3 ×
VC CIO
0.5 ×
VCC IO
3.6
0.1 ×
VC CIO
0.9 ×
VCC IO
1.5
–0.5
2.85
3
3.15
—
0.35 ×
VC CIO
0.5 ×
VCC IO
—
0.1 ×
VC CIO
0.9 ×
VCC IO
1.5
–0.5
3.0-V PCI
3.0-V PCI-X
HardCopy III Device Handbook, Volume 3
© December 2008
Altera Corporation
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Electrical Characteristics
1–9
Refer to Figure 1–6 in the row “Single-Ended Voltage Referenced I/O Standard” in
Table 1–33 for an example of a voltage referenced receiver input waveform and
explanation of terms used in Table 1–13.
Table 1–13. Single-Ended SSTL and HSTL I/O Reference Voltage Specifications – Preliminary
VCC IO (V)
VREF (V)
VTT (V)
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
SSTL-2 CLASS I, II
2.375
2.5
2.625
0.49 ×
VCC IO
0.5 ×
VC CIO
0.51 ×
VCC IO
VREF –
0.04
VREF
VREF +
0.04
SSTL-18 CLASS I, II
1.71
1.8
1.89
0.833
0.9
0.969
VREF –
0.04
VREF
VREF +
0.04
SSTL-15 CLASS I, II
1.425
1.5
1.575
0.47 ×
VCC IO
0.5 ×
VC CIO
0.53 ×
VCC IO
0.47 ×
VC CIO
VREF
0.53 ×
VCC IO
HSTL-18 CLASS I, II
1.71
1.8
1.89
0.85
0.9
0.95
—
VC CIO/2
—
HSTL-15 CLASS I, II
1.425
1.5
1.575
0.68
0.75
0.9
—
VC CIO/2
—
HSTL-12 CLASS I, II
1.14
1.2
1.26
0.47 ×
VCC IO
0.5 ×
VC CIO
0.53 ×
VCC IO
—
VC CIO/2
—
I/O Standard
Table 1–14. Single-Ended SSTL and HSTL I/O Standards Signal Specifications – Preliminary (Part 1 of 2)
VIL (D C) (V)
VIH (D C) (V)
VIL(A C) (V)
VIH(AC ) (V)
VO L (V)
VOH (V)
I/O Standard
Min
Max
Min
Max
Max
Min
Max
Min
IO L (mA)
IOH (mA)
SSTL-2 CLASS I
–0.3
VREF –
0.15
VREF +
0.15
VCC IO +
0.3
VREF –
0.31
VREF +
0.31
VTT –
0.57
VTT +
0.57
8.1
–8.1
SSTL-2 CLASS II
–0.3
VREF –
0.15
VREF +
0.15
VCC IO +
0.3
VREF –
0.31
VREF +
0.31
VTT –
0.76
VTT +
0.76
16.2
–16.2
SSTL-18 CLASS I
–0.3
VREF –
0.125
VREF +
0.125
VCC IO +
0.3
VREF –
0.25
VREF +
0.25
VTT –
0.475
VTT +
0.475
6.7
–6.7
SSTL-18 CLASS II
–0.3
VREF –
0.125
VREF +
0.125
VCC IO +
0.3
VREF –
0.25
VREF +
0.25
0.28
VC CIO –
0.28
13.4
–13.4
SSTL-15 CLASS I
–0.3
VREF –
0.1
VREF +
0.1
VCC IO +
0.3
VREF –
0.175
VREF +
0.175
0.2 ×
VC CIO
0.8 ×
VC CIO
8
–8
SSTL-15 CLASS II
–0.3
VREF –
0.1
VREF +
0.1
VCC IO +
0.3
VREF –
0.175
VREF +
0.175
0.2 ×
VC CIO
0.8 ×
VC CIO
16
–16
HSTL-18 CLASS I
–0.3
VREF –
0.1
VREF +
0.1
VCC IO +
0.3
VREF –
0.2
VREF +
0.2
0.4
VC CIO –
0.4
8
–8
HSTL-18 CLASS II
–0.3
VREF –
0.1
VREF +
0.1
VCC IO +
0.3
VREF –
0.2
VREF +
0.2
0.4
VC CIO –
0.4
16
–16
HSTL-15 CLASS I
–0.3
VREF –
0.1
VREF +
0.1
VCC IO +
0.3
VREF –
0.2
VREF +
0.2
0.4
VC CIO –
0.4
8
–8
HSTL-15 CLASS II
–0.3
VREF –
0.1
VREF +
0.1
VCC IO +
0.3
VREF –
0.2
VREF +
0.2
0.4
VC CIO –
0.4
16
–16
© December 2008
Altera Corporation
HardCopy III Device Handbook, Volume 3
1–10
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Electrical Characteristics
Table 1–14. Single-Ended SSTL and HSTL I/O Standards Signal Specifications – Preliminary (Part 2 of 2)
VIL (D C) (V)
VIH (D C) (V)
VIL(A C) (V)
VIH(AC ) (V)
VO L (V)
VOH (V)
I/O Standard
Min
Max
Min
Max
Max
Min
Max
Min
IO L (mA)
IOH (mA)
HSTL-12 CLASS I
–0.15
VREF –
0.08
VREF +
0.08
VCC IO +
0.15
VREF –
0.15
VREF +
0.15
0.25 ×
VC CIO
0.75 ×
VC CIO
8
–8
HSTL-12 CLASS II
–0.15
VREF –
0.08
VREF +
0.08
VCC IO +
0.15
VREF –
0.15
VREF +
0.15
0.25 ×
VC CIO
0.75 ×
VC CIO
16
–16
Refer to Figure 1–2 in the row “Differential I/O Standards” in Table 1–33 for receiver
input and transmitter output waveforms, and for all differential I/O standards
(LVDS, mini-LVDS, RSDS). VCC_CLKIN is the power supply for differential column clock
input pins. VCCPD is the power supply for row I/Os and all other column I/Os.
Table 1–15. Differential SSTL I/O Standard Specifications – Preliminary
VC CIO (V)
VSW ING (DC ) (V)
VX (A C) (V)
VSW ING (AC ) (V)
VOX (A C) (V)
Min
Typ
Max
Min
Max
Min
Typ
Max
Min
Max
Min
Typ
Max
SSTL-2
CLASS I,
CLASS II
2.375
2.5
2.625
0.3
VCCIO +
0.6
V CCIO/2
– 0.2
—
VCCIO/2
+ 0.2
0.6
VCCIO
V CCIO/2
– 0.15
—
VCCIO/2
+ 0.15
SSTL-18
CLASS I,
CLASS II
1.71
VCCIO +
0.6
V CCIO/2
–
0.175
—
VCCIO/2
+
0.175
0.5
—
+ 0.6
V CCIO/2
–
0.125
VCCIO/2
+
0.125
SSTL-15
CLASS I,
CLASS II
1.425
—
—
VCCIO/2
—
0.4
—
—
VCCIO/2
—
I/O Standard
1.8
1.89
1.5
0.3
1.575
0.2
+ 0.6
VCCIO
Table 1–16. Differential HSTL I/O Standards Specifications – Preliminary
VCC IO (V)
VDIF(DC ) (V)
VX (A C) (V)
VC M (D C) (V)
VD IF(AC ) (V)
I/O Standard
Min
Typ
Max
Min
Max
Min
Typ
Max
Min
Typ
Max
Min
Max
HSTL-18
CLASS I, II
1.71
1.8
1.89
0.2
—
0.78
—
1.12
0.78
—
1.12
0.4
—
HSTL-15
CLASS I, II
1.425
1.5
1.575
0.2
—
0.68
—
0.9
0.68
—
0.9
0.4
—
HSTL-12
CLASS I, II
1.14
1.2
1.26
0.16
VC CIO +
0.3
—
0.5 ×
VC CIO
—
0.4 ×
VCC IO
0.5 ×
VC CIO
0.6 ×
VCC IO
0.3
VC CIO +
0.48
Table 1–17. Differential I/O Standard Specifications – Preliminary (Part 1 of 2)
V
C C IO
I/O Standard
2.5V LVDS
(Row I/O)
(V)
V (mV)
V
ID
IC M (DC )
(V)
V (V) (1)
V (V) (1)
OD
OCM
Min
Typ
Max
Min
Condition
Max
Min
Condition
Max
Min
Typ
Max
Min
Typ
Max
2.375
2.5
2.625
100
V CM = 1.25V
—
0.05
(2)
Dmax ≤ 700
Mbps
1.8
(2)
0.247
—
0.6
1.125
1.25
1.375
2.375
2.5
2.625
100
V CM = 1.25V
—
1.05
(2)
Dmax > 700
Mbps
1.55
(2)
—
—
—
—
—
—
HardCopy III Device Handbook, Volume 3
© December 2008
Altera Corporation
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Electrical Characteristics
1–11
Table 1–17. Differential I/O Standard Specifications – Preliminary (Part 2 of 2)
V
C C IO
(V)
V (mV)
V
ID
(V)
IC M (DC )
V (V) (1)
V (V) (1)
OD
OCM
I/O Standard
Min
Typ
Max
Min
Condition
Max
Min
Condition
Max
Min
Typ
Max
Min
Typ
Max
2.5V LVDS
(Column
I/O)
2.375
2.5
2.625
100
V CM = 1.25V
—
0.05
(2)
Dmax ≤ 700
Mbps
1.8
(2)
0.247
—
0.6
1.0
1.25
1.5
2.375
2.5
2.625
100
V CM = 1.25V
—
1.05
(2)
Dmax > 700
Mbps
1.55
(2)
—
—
—
—
—
1.5
RSDS
(Row I/O)
2.375
2.5
2.625
100
V CM = 1.25V
—
0.3
—
1.4
0.1
0.2
0.6
0.5
1.2
1.4
RSDS
(Column
I/O)
2.375
2.5
2.625
100
V CM = 1.25V
—
0.3
—
1.4
0.1
0.2
0.6
0.5
1.2
1.5
Mini-LVDS
(Row I/O)
2.375
2.5
2.625
200
—
600
0.4
—
1.325
0.25
—
0.6
0.5
1.2
1.4
Mini-LVDS
(Column
I/O)
2.375
2.5
2.625
200
—
600
0.4
—
1.325
0.25
—
0.6
0.5
1.2
1.5
2.375
(4)
2.5
(4)
2.625
(4)
300
—
—
0.6
Dmax ≤ 700
Mbps
1.8
(5)
—
—
—
—
—
—
—
—
—
—
—
—
0.6
Dmax ≤ 700
Mbps
1.6
(5)
—
—
—
—
—
—
LVPECL (3)
Notes to Table 1–17:
(1) RL range: 90 ≤ RL ≤ 110 Ω .
(2) For data rate: Dma x > 700 Mbps, the minimum input voltage is 1.0 V, the maximum input voltage is 1.6 V. For Dm ax ≤ 700 Mbps, the minimum input
voltage is 0 V, the maximum input voltage is 1.85 V.
(3) Column and Row I/O banks support LVPECL I/O standards for input operation only on dedicated clock input pins. Differential clock inputs in
column I/O use VCC_CLKIN which should be powered by 2.5 V. Differential clock inputs in row I/Os are powered by VCCPD.
(4) Power supply for column I/O LVPECL differential clock input buffer is VCC _C LKIN.
(5) For data rate Dm ax > 700 Mbps, the minimum input voltage is 0.85 V, and the maximum input voltage is 1.75 V. For data rate Dm ax ≤ 700 Mbps, the
minimum input voltage is 0.45 V, and the maximum input voltage is 1.95 V.
Power Consumption
Altera offers two ways to estimate power for a design: the Excel-based Early Power
Estimator and the Quartus® II PowerPlay Power Analyzer feature.
Use the interactive Excel-based Early Power Estimator prior to designing in order to
get a magnitude estimate of the device power. The Quartus II PowerPlay Power
Analyzer provides better quality estimates based on the specifics of the design after
the place-and-route is complete. The PowerPlay Power Analyzer can apply a
combination of user-entered, simulation-derived, and estimated signal activities
which, combined with detailed circuit models, can yield very accurate power
estimates.
See Table 1–4 on page 1–5 for supply current estimates for VCCPGM and VCC_CLKIN . Use
the EPE and PowerPlay Power Analyzer for current estimates of the remaining power
supplies.
f
© December 2008
For more information about power estimation tools, refer to the Power Play Early
Power Estimator User Guide and the PowerPlay Power Analysis chapter in volume 3 of
the Quartus II Device Handbook.
Altera Corporation
HardCopy III Device Handbook, Volume 3
1–12
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Switching Characteristics
Switching Characteristics
This section provides performance characteristics of HardCopy III core and periphery
blocks for commercial grade devices. HardCopy III devices are designed to meet, at
minimum, the –3 speed grade of the Stratix III devices. Silicon characterization
determines the actual performance of the HardCopy III devices. These characteristics
can be designated as Preliminary or Final, as defined below.
■
Preliminary—Preliminary characteristics are created using simulation results,
process data, and other known parameters.
■
Final—Final numbers are based on actual silicon characterization and testing.
These numbers reflect the actual performance of the device under worst-case
silicon process, voltage, and junction temperature conditions.
Core Performance Specifications
This sections describes the clock tree, phase-locked loop (PLL), digital signal
processing (DSP), TriMatrix, configuration, and JTAG specifications.
Clock Tree Specifications
Table 1–18 lists clock tree performance specifications for the logic array, DSP blocks,
and TriMatrix Memory blocks for HardCopy III devices.
Table 1–18. HardCopy III Clock Tree Performance – Preliminary
(Note 1)
Device
Commercial Grade (MHz)
Unit
HC311
500
MHz
HC321
500
MHz
HC322
500
MHz
HC331
500
MHz
HC332
500
MHz
HC351
500
MHz
HC352
500
MHz
HC361
500
MHz
HC362
500
MHz
HC372
500
MHz
Note to Table 1–18:
(1) Pending silicon characterization.
HardCopy III Device Handbook, Volume 3
© December 2008
Altera Corporation
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Switching Characteristics
1–13
PLL Specifications
Table 1–19 describes the HardCopy III PLL specifications when operating in both the
commercial junction temperature range (0° to 85° C) and the industrial junction
temperature range (–40° to 100°C). Refer to Figure 1–4 in the “PLL Specifications” row
in Table 1–33 for a PLL block diagram.
Table 1–19. HardCopy III PLL Specifications – Preliminary (Part 1 of 2) (Note 1)
Symbol
Parameter
Min
Typ
Max
Unit
5
—
717 (2)
MHz
fIN
Input clock frequency
fINPF D
Input frequency to the PFD
5
—
325
MHz
fVC O
PLL VCO operating range
600
—
1300
MHz
tEINDUTY
Input clock or external feedback clock input duty cycle
40
—
60
%
fOUT
Output frequency for internal global or regional clock
—
—
717 (3)
MHz
fOUT_EXT
Output frequency for external clock output
—
—
717 (3)
MHz
tOUTDUTY
Duty cycle for external clock output (when set to 50%)
45
50
55
%
tFC OMP
External feedback clock compensation time
—
—
10
ns
tCONF IGPLL
Time required to reconfigure PLL scan chain
—
—
—
scanclk cycles
tCONF IGPHAS E
Time required to reconfigure phase shift
—
—
—
scanclk cycles
fSC ANC LK
scanclk frequency
—
—
100
MHz
tLOCK
Time required to lock from end of device power up (4)
—
—
—
ms
tDLOCK
Time required to lock dynamically (after switchover or
reconfiguring any non-post-scale counters/delays)
—
—
—
ms
fCLB W
PLL closed-loop low bandwidth
—
—
—
MHz
PLL closed-loop medium bandwidth
—
—
—
MHz
PLL closed-loop high bandwidth (5)
—
—
—
MHz
tPLL_P SERR
Accuracy of PLL phase shift
—
—
—
ps
tARES ET
Minimum pulse width on areset signal
10
—
—
ns
tINCC J (4)
Input clock cycle to cycle jitter (FREF ≥ 100 MHz)
—
—
—
UI (p–p)
Input clock cycle to cycle jitter (FREF < 100 MHz)
—
—
—
ps (p–p)
Period jitter for dedicated clock output (FOUT ≥ 100 MHz)
—
—
—
ps (p–p)
Period jitter for dedicate clock output (FOUT < 100 MHz)
—
—
—
mUI (p–p)
tOUTCC J_DC (6) Cycle to cycle jitter for dedicated clock output (FOUT ≥ 100 MHz)
—
—
—
ps (p–p)
Cycle to cycle jitter for dedicated clock output (FOUT < 100 MHz)
—
—
—
mUI (p–p)
Period jitter for clock output on regular I/O (F OUT ≥ 100 MHz)
—
—
—
ps (p–p)
Period jitter for clock output on regular I/O (FOUT < 100 MHz)
—
—
—
mUI (p–p)
Cycle to cycle jitter for clock output on regular I/O (FOUT ≥
100 MHz)
—
—
—
ps (p–p)
Cycle to cycle jitter for clock output on regular I/O (FOUT <
100 MHz)
—
—
—
mUI (p–p)
tOUTPJ _DC (6)
tOUTPJ _IO (6)
tOUTCC J_IO (6)
© December 2008
Altera Corporation
HardCopy III Device Handbook, Volume 3
1–14
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Switching Characteristics
Table 1–19. HardCopy III PLL Specifications – Preliminary (Part 2 of 2) (Note 1)
Symbol
fDRIFT
Parameter
Min
Typ
Max
Unit
Frequency drift after PFDENA is disabled for duration of 100 ms
—
—
—
%
Notes to Table 1–19:
(1) Pending silicon characterization.
(2) This specification is limited in the Quartus II software by the I/O maximum frequency. The maximum I/O frequency is different for each I/O
standard.
(3) This specification is limited by the lower of the two: I/O fMAX or fOUT of the PLL.
(4) A high input jitter directly affects the PLL output jitter. To have low PLL output clock jitter, you must provide a clean clock source, which is less
than 200 ps.
(5) High bandwidth PLL settings are not supported in external feedback mode.
(6) Peak-to-peak jitter with a probability level of 10–12 (14 sigma, 99.99999999974404% confidence level). The output jitter specification applies to
the intrinsic jitter of the PLL, when an input jitter of 30 ps is applied.
DSP Block Specifications
Table 1–20 describes the HardCopy III DSP performance specifications.
Table 1–20. HardCopy III DSP Block Performance Specifications – Preliminary
Mode
(Note 1), (2)
Number of Multipliers Max Unit
9 × 9-bit multiplier (a, c, e, g) (3)
1
365 MHz
9 × 9-bit multiplier (b, d, f, h) (3)
1
410 MHz
12 × 12-bit multiplier (a, e) (4)
1
365 MHz
12 × 12-bit multiplier (b, d, f, h) (4)
1
410 MHz
18 × 18-bit multiplier
1
495 MHz
36 × 36-bit multiplier
1
365 MHz
Double mode
1
365 MHz
18 × 18-bit multiply adder
2
405 MHz
18 × 18-bit multiply adder
4
405 MHz
18 × 18-bit multiply adder with loop back (5)
2
405 MHz
18 × 18-bit multiply accumulator
4
390 MHz
18 × 18-bit multiply adder with chainout
4
390 MHz
Input Cascade Independent output of 4 18 × 18 bit multiplier
4
455 MHz
36-bit shift (32 bit data)
1
390 MHz
Notes to Table 1–20:
(1) Maximum is for fully pipelined block with round and saturation disabled.
(2) Pending silicon characterization.
(3) The DSP block implements eight independent 9 × 9-bit multipliers using a, b, c, and d for the top half of the DSP
block and e, f, g, and h for the bottom DSP half block multipliers.
(4) The DSP block implements six independent 12 × 12-bit multipliers using a, b, and d for the top half of the DSP half
block and e, f, and h for the bottom DSP half block multipliers.
(5) Maximum for non-pipelined block with loopback input registers disabled with round and saturation disabled.
HardCopy III Device Handbook, Volume 3
© December 2008
Altera Corporation
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Switching Characteristics
1–15
TriMatrix Memory Block Specifications
Table 1–21 describes the HardCopy III TriMatrix memory block specifications.
Table 1–21. HardCopy III TriMatrix Memory Block Performance Specifications – Preliminary (Part 1 of 2) (Note 1)
Memory
Block Type
MLAB
M9K
TriMatrix
Memory
Max
Unit
Single port 16 × 10
1
500
MHz
Simple dual-port 16 × 20 single clock
1
500
MHz
ROM 64 × 10
1
500
MHz
ROM 32 × 20
1
500
MHz
Single-port 8K × 1
1
465
MHz
Single-port 4K × 2 or 2K × 4
1
485
MHz
Single-port 1K × 9, 512 × 18, or 256 × 36
1
475
MHz
Simple dual-port, 8K × 1 single clock
1
460
MHz
Simple dual-port, 4K × 2 or 2K × 4, single clock
1
480
MHz
Simple dual-port, 1K × 9, 512 × 18, or 256 × 36, single clock
1
475
MHz
Simple dual-port, 8K × 1, 4K × 2, or 2K × 4 single clock, with the
read-during-write option set to “Old Data”
1
312
MHz
Simple dual-port, 1K × 9, 512 × 18, or 256 × 36, single clock, with the
read-during-write option set to “Old Data”
1
312
MHz
True dual-port, 8K × 1 single clock
1
440
MHz
True dual-port, 4K × 2 or 2K × 4, single clock
1
480
MHz
True dual-port, 1K × 9 or 512 × 18, single clock
1
460
MHz
True dual-port, 8K × 1, 4K × 2, or 2K × 4, single clock, with the
read-during-write option set to “Old Data”
1
295
MHz
True dual-port, 1K × 9 or 512 × 18, single clock, with the read-during-write
option set to “Old Data”
1
285
MHz
ROM 1P, 8K × 1, 4K × 2, or 2K × 4, single clock, with the read-during-write
option set to “Old Data”
1
485
MHz
ROM 1P, 1K × 9, 512 × 18, single clock, with the read-during-write option
set to “Old Data”
1
485
MHz
ROM 2P, 8K × 1, 4K × 2, or 2K × 4
1
485
MHz
ROM 2P, 1K × 9, or 512 × 18
1
485
MHz
Min Pulse Width (Clock High Time)
—
800
ps
Mode
© December 2008
Altera Corporation
HardCopy III Device Handbook, Volume 3
1–16
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Switching Characteristics
Table 1–21. HardCopy III TriMatrix Memory Block Performance Specifications – Preliminary (Part 2 of 2) (Note 1)
Memory
Block Type
M144K
TriMatrix
Memory
Max
Unit
True dual-port 16K × 9 or 8K × 18, dual clock
1
300
MHz
True dual-port 4K × 36 dual clock
1
430
MHz
Simple dual-port 16K × 9 or 8K × 18, dual clock
1
300
MHz
Simple dual-port 4K × 36 or 2K × 72, dual clock
1
470
MHz
ROM 1 Port
1
500
MHz
ROM 2 Port
1
450
MHz
Single-port 16K × 9 or 8K × 18
1
330
MHz
Single-port 4K × 36
1
500
MHz
True dual-port 16K × 9, 8K × 18, or 4K × 36, dual clock with the
read-during-write option set to “Old Data”
1
270
MHz
Simple dual-port 16K × 9, 8K × 18, 4K × 36, or 2K × 72, dual clock with the
read-during-write option set to “Old Data”
1
292
MHz
Simple dual-port 2K × 64 dual clock (with ECC)
1
210
MHz
Min Pulse Width (Clock High Time)
—
1000
ps
Mode
Note to Table 1–21:
(1) Pending silicon characterization.
JTAG Specifications
Table 1–22 shows the JTAG timing parameters and values for HardCopy III devices.
Refer to Figure 1–3 in the “HIGH-SPEED I/O Block” row in Table 1–33 for JTAG
timing requirements.
Table 1–22. HardCopy III JTAG Timing Parameters and Values – Preliminary
Symbol
Parameter
Min
Max
Unit
tJC P
TCK clock period
30
—
ns
tJC H
TCK clock high time
14
—
ns
tJC L
TCK clock low time
14
—
ns
tJP SU (TDI)
JTAG port setup time for TDI
1
—
ns
tJP SU (TMS)
JTAG port setup time for TMS
3
—
ns
tJP H
JTAG port hold time
5
—
ns
tJP CO
JTAG port clock to output
—
11
ns
tJP ZX
JTAG port high impedance to valid output
—
14
ns
tJP XZ
JTAG port valid output to high impedance
—
14
ns
Periphery Performance
This section describes the periphery performance, including high-speed I/O, external
memory interface, and OCT calibration block specifications.
HardCopy III Device Handbook, Volume 3
© December 2008
Altera Corporation
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Switching Characteristics
1–17
High-Speed I/O Specifications
Refer to Table 1–33 for definitions of high-speed timing specifications.
Table 1–23 shows the high-speed I/O timing for HardCopy III devices.
Table 1–23. High Speed I/O Specifications – Preliminary
Min
Typ
Max
Unit
Clock boost factor W = 2 to 32 (4)
5
—
625
MHz
Clock boost factor W = 1 (SERDES bypassed)
5
—
600
MHz
Clock boost factor W = 1 (SERDES used)
150
—
717
MHz
SERDES factor J = 3 to 10
150
—
1250
Mbps
SERDES factor J = 2, uses DDR registers
—
—
TBD (5)
Mbps
SERDES factor J = 1, uses SDR register
—
—
TBD (5)
Mbps
Symbol
fHSCLK (input clock frequency)
Dedicate LVDS-fHSDR (data
rate)
(Note 1), (2), (3)
Conditions
Dedicated LVDS-f HSDRDPA (data
rate)
—
150
—
1250
Mbps
LVDS_E_3R-f HSDR
—
—
—
340
Mbps
LVDS_E_1R-f HSDR (data rate)
—
—
—
200
Mbps
Transmitter
tX jitter
Total jitter for data rate, 600 Mbps - 1.25 Gbps
—
—
160
ps
Total jitter for data rate, < 600 Mbps
—
—
0.1
UI
Dedicated LVDS Output t RISE
and tFALL
All differential I/O standards
—
—
200
ps
tDUTY
TX output clock duty cycle
45
50
55
%
TCCS
All differential I/O standards
—
—
100
ps
—
—
—
(5)
UI
Soft CDR jitter tolerance
—
—
—
(5)
ps
Soft CDR run length
—
—
—
(5)
UI
Soft-CDR PPM tolerance
—
—
—
(5)
PPM
—
—
(5)
ps
DPA mode
DPA run length
Soft CDR mode
Non DPA mode
Sampling window
All differential I/O standards
Notes to Table 1–23:
(1) When J = 3 to 10, the serializer/deserializer (SERDES) block is used.
(2) When J = 1 or 2, the SERDES block is bypassed.
(3) The minimum specification is dependent on the clock source (PLL and clock pin, for example) and the clock routing resource (global, regional,
or local) utilized. The I/O differential buffer and input register do not have a minimum toggle rate.
(4) The input clock frequency and the W factor must satisfy the following Left and Right PLL output frequency specification: 150 MHz input clock
frequency × W ≤ 1250 MHz.
(5) Pending silicon characterization.
© December 2008
Altera Corporation
HardCopy III Device Handbook, Volume 3
1–18
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Switching Characteristics
Table 1–24. DPA Lock Time Specifications – Preliminary
Standard
SPI-4
Parallel Rapid I/O
Miscellaneous
(Note 1)
Training Pattern
Transition Density
Min
Typ
Max
Unit
00000000001111111111
10%
TBD
—
—
Number of repetitions
00001111
25%
TBD
—
—
Number of repetitions
10010000
50%
TBD
—
—
Number of repetitions
10101010
100%
TBD
—
—
Number of repetitions
01010101
100%
TBD
—
—
Number of repetitions
Note to Table 1–24:
(1) Pending silicon characterization.
External Memory Interface Specifications
Table 1–25 through Table 1–30 list the external memory interface specifications for the
HardCopy III device family. Use these tables to perform memory interface timing
analysis.
Table 1–25. HardCopy III Maximum Clock Rate Support for External Memory Interfaces with
Half-Rate Controller – Preliminary (Note 1)
(MHz)
Memory Standards
Top and Bottom I/O Banks
Left and Right I/O Banks
TBD
TBD
DDR2 SDRAM
TBD
TBD
DDR SDRAM
TBD
TBD
QDRII+ SRAM
TBD
TBD
QDRII SRAM
TBD
TBD
RLDRAM II
TBD
TBD
DDR3 SDRAM
Note to Table 1–25:
(1) Pending silicon characterization.
Table 1–26. HardCopy III Maximum Clock Rate Support for External Memory Interfaces with
Full-Rate Controller – Preliminary (Note 1)
(MHz)
Memory Standards
Top and Bottom I/O Banks
Left and Right I/O Banks
DDR2 SDRAM
TBD
TBD
DDR SDRAM
TBD
TBD
Note to Table 1–26:
(1) Pending silicon characterization.
HardCopy III Device Handbook, Volume 3
© December 2008
Altera Corporation
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Switching Characteristics
1–19
External Memory I/O Timing Specifications
Table 1–27 and Table 1–28 list HardCopy III device timing uncertainties on the read
and write data paths. Use these specifications to determine timing margins for source
synchronous paths between the HardCopy III FPGA and the external memory device.
Refer to Figure 1–5 in the “SW (sampling window)” row in Table 1–33.
Table 1–27. Sampling Window (SW), Read Side – Preliminary (Note 1)
Sampling Window (ps)
Location (2)
Memory Type
Setup
Hold
VIO
DDR3
TBD
TBD
VIO
DDR2
TBD
TBD
VIO
DDR1
TBD
TBD
VIO
QDRII / II +
TBD
TBD
VIO
RLDRAM II
TBD
TBD
HIO
DDR3
TBD
TBD
HIO
DDR2
TBD
TBD
HIO
DDR1
TBD
TBD
HIO
QDRII / II +
TBD
TBD
HIO
RLDRAM
TBD
TBD
Notes to Table 1–27:
(1) Pending silicon characterization.
(2) VIO (vertical I/O) refers to I/Os in the top and bottom banks; HIO (horizontal I/O) refers to I/Os in the left and right
banks.
Table 1–28. Transmitter Channel-to-Channel Skew (TCCS), Write Side – Preliminary (Note 1)
TCCS (ps)
Location (2)
Memory Type
Lead
Lag
VIO
DDR3
TBD
TBD
VIO
DDR2
TBD
TBD
VIO
DDR1
TBD
TBD
VIO
QDRII / II +
TBD
TBD
VIO
RLDRAM II
TBD
TBD
HIO
DDR3
TBD
TBD
HIO
DDR2
TBD
TBD
HIO
DDR1
TBD
TBD
HIO
QDRII / II +
TBD
TBD
HIO
RLDRAM II
TBD
TBD
Notes to Table 1–28:
(1) Pending silicon characterization.
(2) VIO (vertical I/O) refers to I/Os in the top and bottom banks; HIO (horizontal I/O) refers to I/Os in the left and right
banks.
© December 2008
Altera Corporation
HardCopy III Device Handbook, Volume 3
1–20
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Switching Characteristics
DLL and DQS Logic Block Specifications
Table 1–29 describes the delay-locked loop (DLL) frequency range specifications for
HardCopy III devices.
Table 1–29. HardCopy III DLL Frequency Range Specifications – Preliminary (Note 1)
Frequency Mode
Frequency Range (MHz)
Resolution (Degrees)
0
TBD
22.5
1
TBD
30
2
TBD
36
3
TBD
45
4
TBD
30
5
TBD
36
6
TBD
45
Note to Table 1–29:
(1) Pending silicon characterization.
Table 1–30 describes the DQS phase offset delay per setting for HardCopy III devices.
Table 1–30. Average DQS Phase Offset Delay per Setting – Preliminary (Note 1), (2), (3), (4)
Min
Typ
Max
Unit
7
11
15
ps
Notes to Table 1–30:
(1) The valid settings for phase offset are –64 to +63 for frequency modes 0 to 3 and –32 to +31 for frequency modes
4 to 6.
(2) The typical value equals the average of the minimum and maximum values.
(3) The delay settings are linear with a cumulative delay variation of ±20ps for all speed grades.
(4) Pending silicon characterization.
OCT Calibration Block Specifications
Table 1–31 shows the on-chip termination calibration block specifications for
HardCopy III devices.
Table 1–31. On-Chip Termination Calibration Block Specification – Preliminary
Symbol
Description
Min
Typical
Max
Unit
OCTUSRCLK
Clock required by OCT calibration blocks
—
—
20
MHz
tOCTC AL
Number of OCTUSRCLK clock cycles required for OCT RS and
RT calibration
—
1000
—
cycles
tOCTS HIFT
Number of OCTUSRCLK clock cycles required for OCT code to
shift out per OCT calibration block
—
28
—
cycles
tRS_RT
Time required to dynamically switch from RS to RT
—
2.5
—
ns
HardCopy III Device Handbook, Volume 3
© December 2008
Altera Corporation
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
I/O Timing Model
1–21
Duty Cycle Distortion (DCD) Specifications
Table 1–32 lists the worst case DCD for HardCopy III devices. Detailed information on
duty cycle distortion are published after characterization.
Table 1–32. Duty Cycle Distortion on HardCopy III I/O Pins – Preliminary (Note 1), (2)
Symbol
Min
Max
Unit
Output Duty Cycle
45
55
%
Notes to Table 1–32:
(1) Preliminary DCD specification applies to clock outputs from PLLs, global clock tree, IOE driving dedicated, and
general purpose I/O pins.
(2) Detailed DCD specifications pending silicon characterization.
I/O Timing Model
The I/O timing specifications for HardCopy III devices will be available in a future
revision of the DC and Switching Characteristics chapter in volume 3 of the HardCopy III
Device Handbook.
Glossary
Table 1–33 shows the glossary for this chapter.
Table 1–33. Glossary Table
Letter
Subject
Definitions
A
—
—
B
—
—
C
—
—
D
Differential I/O
Standards
Figure 1–2. Receiver Input Waveforms
Single-Ended Waveform
Positive Channel (p) = VIH
VID
Negative Channel (n) = VIL
Single-Ended Waveform
VCM
Positive Channel (p) = VOH
Ground
VOD
Negative Channel (n) = VOL
VCM
Differential Waveform
Ground
VID
p−n=0V
Differential Waveform
VID
VOD
p−n=0V
Transmitter Output Waveforms
VOD
E
F
—
—
fHSCLK
HIGH-SPEED I/O Block: High-speed receiver/transmitter input and output clock frequency.
fHSDR
HIGH-SPEED I/O Block: Maximum/minimum LVDS data transfer rate (f HSDR = 1/TUI),
non-DPA.
fHSDRDPA
HIGH-SPEED I/O Block: Maximum/minimum LVDS data transfer rate (f HSDRDPA = 1/TUI), DPA.
G
—
—
H
—
—
© December 2008
Altera Corporation
HardCopy III Device Handbook, Volume 3
1–22
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Glossary
Table 1–33. Glossary Table
Letter
Subject
Definitions
I
—
—
J
J
HIGH-SPEED I/O Block: Deserialization factor (width of parallel data bus).
JTAG Timing
Specifications
Figure 1–3. JTAG Timing Specifications
TMS
TDI
tJCP
tJCH
tJCL
tJPH
t JPSU
TCK
tJPZX
tJPXZ
tJPCO
TDO
K
—
—
L
—
—
M
—
—
N
—
—
O
—
—
P
PLL
Specifications
The block diagram shown in the following figure highlights the PLL Specification parameters:
Figure 1–4. Diagram of PLL Specifications (Note 1)
Switchover
CLKOUT Pins
fOUT_EXT
CLK
fIN
N
fINPFD
PFD
CP
LF
VCO
fVCO
Core Clock
Counters
C0..C9
fOUT
GCLK
RCLK
M
Key
Reconfigurable in User Mode
External Feedback
Note:
(1) Core Clock can only be fed by dedicated clock input pins or PLL outputs.
Q
R
—
RL
—
Receiver differential input discrete resistor (external to HardCopy III device).
HardCopy III Device Handbook, Volume 3
© December 2008
Altera Corporation
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Glossary
1–23
Table 1–33. Glossary Table
Letter
S
Subject
SW (sampling
window)
Definitions
The period of time during which the data must be valid in order to capture it correctly. The
setup and hold times determine the ideal strobe position within the sampling window.
Figure 1–5. Timing Diagram
Bit Time
0.5 x TCCS
Single-ended
Voltage
Referenced I/O
Standard
RSKM
Sampling Window
(SW)
RSKM
0.5 x TCCS
The JEDEC standard for SSTl and HSTL I/O standards defines both the AC and DC input
signal values. The AC values indicate the voltage levels at which the receiver must meet its
timing specifications. The DC values indicate the voltage levels at which the final logic state
of the receiver is unambiguously defined. Once the receiver input has crossed the AC value,
the receiver is changed to the new logic state.
The new logic state is maintained as long as the input stays beyond the DC threshold. This
approach is intended to provide predictable receiver timing in the presence of input
waveform ringing.
Figure 1–6. Single-Ended Voltage Referenced I/O Standard
VCCIO
VOH
VIH (AC )
VIH(DC)
VREF
VIL(DC)
VIL(AC )
VOL
VSS
T
tC
High-speed receiver and transmitter input and output clock period.
TCCS
(channel-tochannel-skew)
The timing difference between the fastest and the slowest output edges, including t C O
variation and clock skew, across channels driven by the same PLL. The clock is included in
the TCCS measurement (refer to Figure 1–5 under S in this table).
tDUTY
HIGH-SPEED I/O Block: Duty cycle on high-speed transmitter output clock.
Timing Unit Interval (TUI)
The timing budget allowed for skew, propagation delays, and data sampling window. (TUI =
1/(Receiver Input Clock Frequency Multiplication Factor) = t C/w)
tFALL
Signal high-to-low transition time (80-20%)
tINCCJ
Cycle-to-cycle jitter tolerance on PLL clock input
tOUTPJ_IO
Period jitter on general purpose I/O driven by a PLL
tOUTPJ_DC
Period jitter on dedicated clock output driven by a PLL
tRISE
Signal low-to-high transition time (20–80%)
U
© December 2008
—
Altera Corporation
—
HardCopy III Device Handbook, Volume 3
1–24
Chapter 1: DC and Switching Characteristics of HardCopy III Devices
Referenced Documents
Table 1–33. Glossary Table
Letter
V
W
Subject
Definitions
VCM(DC)
DC common mode input voltage.
VICM
Input common mode voltage: The common mode of the differential signal at the receiver.
VID
Input differential voltage swing: The difference in voltage between the positive and
complementary conductors of a differential transmission at the receiver.
VDIF(AC)
AC differential input voltage: Minimum AC input differential voltage required for switching.
VDIF(DC)
DC differential input voltage: Minimum DC input differential voltage required for switching.
VIH
Voltage input high: The minimum positive voltage applied to the input that will be accepted by
the device as a logic high.
VIH(AC)
High-level AC input voltage
VIH(DC)
High-level DC input voltage
VIL
Voltage input low: The maximum positive voltage applied to the input that will be accepted by
the device as a logic low.
VIL(AC)
Low-level AC input voltage
VIL(DC)
Low-level DC input voltage
VOCM
Output common mode voltage: The common mode of the differential signal at the
transmitter.
VOD
Output differential voltage swing: The difference in voltage between the positive and
complementary conductors of a differential transmission at the transmitter.
W
HIGH-SPEED I/O BLOCK: Clock boost factor
X
—
—
Y
—
—
Z
—
—
Referenced Documents
This chapter references the following documents:
■
Power Play Early Power Estimator User Guide
■
PowerPlay Power Analysis chapter in volume 3 of the Quartus II Device Handbook
Document Revision History
Table 1–34 shows the revision history for this document.
Table 1–34. Document Revision History
Date and Document Version
December 2008, v2.0
May 2008, v1.0
HardCopy III Device Handbook, Volume 3
Changes Made
■
Updated Table 1–3.
■
Updated Table 1–19.
■
Updated Table 1–23.
■
Made minor editorial changes.
Initial release.
Summary of Changes
—
—
© December 2008
Altera Corporation