MBRH20020 thru MBRH20040R
Silicon Power
Schottky Diode
VRRM = 20 V - 40 V
IF(AV) = 200 A
Features
• High Surge Capability
• Types from 20 V to 40 V VRRM
D-67 Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
Conditions
MBRH20020(R) MBRH20030(R) MBRH20035(R) MBRH20040(R)
Unit
VRRM
20
30
35
40
V
VRMS
14
21
25
28
V
VDC
Tj
Tstg
20
-55 to 150
-55 to 150
30
-55 to 150
-55 to 150
35
-55 to 150
-55 to 150
40
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
Average forward current
(per pkg)
IF(AV)
TC = 125 °C
200
200
200
200
A
Peak forward surge current
IFSM
tp = 8.3 ms, half sine
3000
3000
3000
3000
A
Maximum instantaneous
forward voltage
VF
IFM = 200 A, Tj = 25 °C
0.70
0.70
0.70
0.70
V
Maximum instantaneous
reverse current at rated DC
blocking voltage
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
10
50
1
10
50
1
10
50
1
10
50
mA
0.35
0.35
0.35
0.35
°C/W
Parameter
MBRH20020(R) MBRH20030(R) MBRH20035(R) MBRH20040(R)
Unit
Thermal characteristics
Thermal resistance, junctioncase
RΘJC
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MBRH20020 thru MBRH20040R
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MBRH20020 thru MBRH20040R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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