IPD350N06L G OptiMOS® Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logicl level V DS 60 V R DS(on),max 35 mΩ ID 29 A • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Type IPD350N06L G Package PG-TO252-3-11 Marking 350N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 29 T C=100 °C 20 Unit A Pulsed drain current I D,pulse T C=25 °C1) 116 Avalanche energy, single pulse E AS I D=29 A, R GS=25 Ω 80 mJ Reverse diode dv /dt dv /dt I D=29 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 1) ±20 V 68 W -55 ... 175 °C 55/175/56 See figure 3 Rev. 1.1 page 1 2006-05-08 IPD350N06L G Parameter Values Symbol Conditions Unit min. typ. max. - - 2.2 minimal footprint - - 75 6 cm2 cooling area2) - - 50 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=28 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=60 V, V GS=0 V, T j=125 °C - 1 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=29 A - 27 35 mΩ V GS=4.5 V, I D=19 A - 36 47 - 1.4 - Ω 16 32 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=29 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 2 2006-05-08 IPD350N06L G Parameter Values Symbol Conditions Unit min. typ. max. - 600 800 - 150 200 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 40 60 Turn-on delay time t d(on) - 6 9 Rise time tr - 21 32 Turn-off delay time t d(off) - 29 44 Fall time tf - 20 30 Gate to source charge Q gs - 2 3 Gate charge at threshold Q g(th) - 1 1.3 Gate to drain charge Q gd - 6 9 Switching charge Q sw - 8 11 Gate charge total Qg - 10 13 Gate plateau voltage V plateau - 4.2 - Output charge Q oss - 6 7 - - 29 - - 116 - 0.98 1.3 V - 40 50 ns - 36 45 nC V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=29 A, R G=11 Ω pF ns Gate Charge Characteristics3) V DD=30 V, I D=29 A, V GS=0 to 5 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 3) T C=25 °C V GS=0 V, I F=29 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs A See figure 16 for gate charge parameter definition Rev. 1.1 page 3 2006-05-08 IPD350N06L G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 80 30 70 25 60 20 I D [A] P tot [W] 50 40 15 30 10 20 5 10 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 101 limited by on-state resistance 1 µs 2 10 0.5 10 µs 100 101 1 ms DC 0.2 Z thJC [K/W] I D [A] 100 µs 10 ms 0.1 0.05 10-1 0.02 0 10 0.01 single pulse 10-1 10-2 -1 10 0 1 10 10 2 10 V DS [V] Rev. 1.1 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2006-05-08 IPD350N06L G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 80 60 10 V 5.5 V 4V 3.5 V 3V 5V 50 60 I D [A] 40 R DS(on) [mΩ] 4.5 V 30 4V 4.5 V 40 5V 5.5 V 10 V 20 20 3.5 V 10 3V 0 0 0 1 2 0 3 10 20 V DS [V] 30 40 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 60 50 50 40 40 g fs [S] I D [A] 30 30 20 20 10 10 175 °C 25 °C 0 0 0 1 2 3 4 5 V GS [V] Rev. 1.1 0 10 20 30 40 50 60 I D [A] page 5 2006-05-08 IPD350N06L G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=29 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 100 2.5 80 2 60 V GS(th) [V] R DS(on) [mΩ] 280 µA 98 % 40 1.5 28 µA 1 typ 20 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 102 175 °C 98% 25 °C 103 I F [A] C [pF] Ciss 175 °C 101 25 °C 98% Coss 102 100 Crss 101 10-1 0 10 20 30 40 50 V DS [V] Rev. 1.1 0 1 2 3 V SD [V] page 6 2006-05-08 IPD350N06L G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=29 A pulsed parameter: T j(start) parameter: V DD 102 12 30 V 10 12V 25 °C 48 V 8 V GS [V] I AV [A] 100 °C 101 150 °C 6 4 2 100 0 100 101 102 103 0 5 t AV [µs] 10 15 20 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 75 V GS Qg V BR(DSS) [V] 70 65 V g s(th) 60 55 Q g (th) Q sw Q gs 50 -60 -20 20 60 100 140 Q gate Q gd 180 T j [°C] Rev. 1.1 page 7 2006-05-08 IPD350N06L G PG-TO252-3: Outline packaging: Rev. 1.1 page 8 2006-05-08 IPD350N06L G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 9 2006-05-08