DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF450 PNP medium frequency transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 11 Philips Semiconductors Product specification PNP medium frequency transistor BF450 FEATURES PINNING • Low current (max. 25 mA) PIN • Low voltage (max. 40 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION • HF and IF stages in radio receivers • Mixer stages in AM receivers. handbook, halfpage1 DESCRIPTION 3 2 3 1 PNP medium frequency transistor in a TO-92; SOT54 plastic package. 2 MAM271 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V ICM peak collector current − −25 mA Ptot total power dissipation − 300 mW hFE DC current gain IC = −1 mA; VCE = −10 V 50 − fT transition frequency IC = −1 mA; VCE = −10 V; f = 100 MHz 350 − 1997 Jul 11 Tamb ≤ 25 °C 2 MHz Philips Semiconductors Product specification PNP medium frequency transistor BF450 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −4 V IC collector current (DC) − −25 mA ICM peak collector current − −25 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 420 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IE = 0; VCB = −30 V MIN. − MAX. −50 UNIT ICBO collector cut-off current IE = 0; VCB = −30 V; Tamb = 150 °C − −4 µA IEBO emitter cut-off current IC = 0; VEB = −3 V − −100 nA hFE DC current gain IC = −1 mA; VCE = −10 V 50 − VBE base-emitter voltage IC = −1 mA; VCE = −10 V −680 −780 mV Cre feedback capacitance IC = 0; VCB = −10 V; f = 1 MHz − 0.55 pF fT transition frequency IC = −1 mA; VCE = −10 V; f = 100 MHz 350 − MHz 1997 Jul 11 3 nA Philips Semiconductors Product specification PNP medium frequency transistor BF450 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1997 Jul 11 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 4 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP medium frequency transistor BF450 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jul 11 5 Philips Semiconductors Product specification PNP medium frequency transistor BF450 NOTES 1997 Jul 11 6 Philips Semiconductors Product specification PNP medium frequency transistor BF450 NOTES 1997 Jul 11 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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