High Voltage MOSFET N-Channel, Depletion Mode VDSS = 500 V = 20 A ID25 RDS(on) = 0.33 Ω IXTH 20N50D IXTT 20N50D Preliminary Data Sheet TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V DSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C 500 V VGS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 20 A IDM TC = 25°C; pulse width limited by TJM 50 A PD TC = 25°C 400 W -55 ... + 150 °C TJM 150 °C Tstg -55 ... + 150 °C TJ TL 1.6 mm (0.063 in) from case for 10 seconds 300 °C TISOL Plastic case for 10 seconds 300 °C Md Mounting torque Weight TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 g g G G G = Gate S = Source VDSX VGS = -10 V, ID = 250 mA 500 VGS(off) VDS = 25 V, ID = 250 mA -1.5 IGSS VGS = ± 30 VDC, VDS = 0 IDSX(off) VDS = VDSS VGS = -10 V RDS(on) VGS = 10 V, ID = 10 A Note 1 ID(on) VGS = 0 V, VDS= 25 V Note 1 © 2006 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. (TAB) S D (TAB) D = Drain TAB = Drain Features z z Test Conditions S TO-268 (IXTT) z Symbol D Normally ON Mode International standard packages Molding epoxies meet UL 94 V-0 flammability classification Applications V z -3.5 ± 100 V z nA z z TJ = 25°C TJ = 125°C 1.5 25 500 μA μA 0.33 Ω z Level shifting Triggers Solid State Relays Current Regulators Active load A 99192(01/06) IXTH 20N50D IXTT 20N50D Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDS= 30 V, ID =10 A, Note 1 4.0 Ciss 7.5 S 2500 pF 400 pF Crss 100 pF td(on) 35 ns Coss VGS = -10 V, VDS = 25 V, f = 1 MHz tr VGS= 0 V to -10 V, VDS = 0.5 • VDSX 85 ns td(off) ID = 10 A, RG = 4.7 Ω (External), 110 ns 75 ns 125 nC 35 51 nC nC tf 1 VGS = 10 V, VDS = 0.5 • VDSX, ID = 0.5 • ID25 RthJC 0.31 RthCK 0.25 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VSD IF = ID25, VGS = -10 V, Note 1 0.85 trr IF = 20A, -di/dt = 100 A/μs, VR = 100 V vGS= -10 V 510 1.5 V ns 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Qg(on) Qgs Qgd TO-247 AD (IXTH) Outline Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-268 (IXTTH) Outline Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 IXTH 20N50D IXTT 20N50D Fig . 1. Ou tp u t C h ar acte r is tics @ 25 ºC Fig . 2. Exte n d e d Ou tp u t C h ar acte r is tics @ 25 ºC 20 40 V GS = 5V 18 4V V GS = 5V 35 16 4V 0V 3V 30 I D - Amperes I D - Amperes 14 12 10 2V 8 6 1V 25 3V 20 15 2V 10 1V 4 5 2 0V -1V 0 0V 0 0 0 1 2 3 4 VD 5 S 6 7 8 9 6 12 15 18 V D S - V olts 21 24 27 30 Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs . Junction Te m pe rature 2.8 20 V GS = 5V 18 2.6 4V I D = 10A 2.4 R D S ( o n ) - Normalized 16 3V 14 12 2V 10 8 1V 6 4 2.2 2 VGS = 5V 1.8 1.6 V GS = 10V 1.4 1.2 1 0.8 0V 2 0.6 -1V 0 0 2 4 6 8 10 12 14 16 0.4 18 -50 20 -25 Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID 2.4 16 I D - Amperes 18 2.2 VGS = 5V 1.8 VGS = 10V 100 125 150 14 12 10 8 1.4 6 1.2 4 2 TJ = 25ºC 1 75 20 2.6 1.6 50 22 TJ = 125ºC 2 25 Fig. 6. Drain Current vs. Case Tem perature 3 2.8 0 TJ - Degrees Centigrade V D S - V olts R D S ( o n ) - Normalized 9 - V olts Fig. 3. Output Ch ar acte r is tics @ 125 ºC I D - Amperes 3 10 0 0.8 0 5 10 15 I D - Amperes © 2006 IXYS All rights reserved 20 25 30 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTH 20N50D IXTT 20N50D Fig. 7. Input Adm ittance Fig. 8. Trans conductance 25 14 V DS = 30V VDS = 30V 12 15 10 TJ = 125ºC 25ºC 125ºC 8 6 4 25ºC -40ºC 5 TJ = -40ºC 10 g f s - Siemens I D - Amperes 20 2 0 0 -2 -1 0 1 2 3 0 5 10 V G S - V olts Fig. 9. Sour ce Cur r e nt vs . Sour ce -To-Dr ain V oltage 20 25 30 Fig. 10. De pe nde nce of Bre ak dow n and Thr e s hole V oltage s on Te m pe rature 60 1.4 55 BV / V G S ( o f f ) - Normalized V GS = -10V 50 45 I S - Amperes 15 I D - Amperes 40 35 30 25 TJ = 125ºC 20 TJ = 25ºC 15 10 1.3 V GS(off) @ V DS = 25V 1.2 1.1 1 BV DSS @ V GS = -10V 0.9 5 0 0.8 0.5 0.6 0.7 0.8 0.9 1 -50 V S D - V olts -25 25 50 75 100 125 150 35 40 TJ - Degrees Centigrade Fig. 11. Gate Charge Fig. 12. Capacitance 11 10000 VDS = 250V 9 Capacitance - picoFarads I D = 10A 7 I G = 10mA V G S - Volts 0 5 3 1 -1 C iss 1000 C oss 100 C rss f = 1MHz -3 VGS = -10V -5 10 0 20 40 60 80 100 120 140 Q G - nanoCoulombs IXYS reserves the right to change limits, test conditions, and dimensions. 0 5 10 15 20 25 V D S - Volts 30 IXTH 20N50D IXTT 20N50D Fig . 13. Fo r w ar d -Bias Safe Op e r atin g A r e a 100 25μs I D - Amperes R D S(on) Lim it 100μs 10 1m s TJ = 150ºC TC = 25ºC DC 10m s 1 10 100 1000 V D S - V olts Fig. 14. Maximum Transient Thermal Resistance R( t h ) J C - ºC / W 1.00 0.10 0.01 0.1 1 10 Pulse Width - milliseconds © 2006 IXYS All rights reserved 100 1000