Order this document by MPS3638/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –25 Vdc Collector – Emitter Voltage VCES –25 Vdc Collector – Base Voltage VCBO –25 Vdc Emitter – Base Voltage VEBO –4.0 Vdc Collector Current — Continuous IC –500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/W RqJC 83.3 °C/W Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage (IC = –100 mAdc, VBE = 0) V(BR)CES –25 — Vdc Collector – Emitter Sustaining Voltage(2) (IC = –10 mAdc, IB = 0) VCEO(sus) –25 — Vdc Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) V(BR)CBO –25 — Vdc Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) V(BR)EBO –4.0 — Vdc — — –0.035 –2.0 Characteristic OFF CHARACTERISTICS mAdc Collector Cutoff Current (VCE = –15 Vdc, VBE = 0) (VCE = –15 Vdc, VBE = 0, TA = –65°C) ICES Emitter Cutoff Current (VEB = –3.0 V, IC = 0) IEBO — –35 nA IB — –0.035 mAdc Base Current (VCE = –15 Vdc, VBE = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. v v Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPS3638,A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(2) DC Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc) MPS3638A hFE 80 — (IC = –10 mAdc, VCE = –10 Vdc) MPS3638 MPS3638A 20 100 — — (IC = –50 mAdc, VCE = –1.0 Vdc) MPS3638 MPS3638A 30 100 — — (IC = –300 mAdc, VCE = –2.0 Vdc) MPS3638 MPS3638A 20 20 — — — — –0.25 –1.0 — –0.80 –1.1 –2.0 100 150 — — — — 20 10 — — 65 25 — 2000 — — 26 15 25 100 — — hoe — 1.2 mmhos td — 20 ns tr — 70 ns ts — 140 ns Fall Time (VCC = –10 Vdc, IC = –300 mAdc, IB1 = –30 mAdc, IB2 = –30 mAdc) tf — 70 ns Turn–On Time (IC = –300 mAdc, IB1 = –30 mAdc) ton — 75 ns Turn–Off Time (IC = –300 mAdc, IB1 = –30 mAdc, IB2 = 30 mAdc) toff — 170 ns Collector – Emitter Saturation Voltage (IC = –50 mAdc, IB = –2.5 mAdc) (IC = –300 mAdc, IB = –30 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = –50 mAdc, IB = –2.5 mAdc) (IC = –300 mAdc, IB = –30 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (VCE = –3.0 Vdc, IC = –50 mAdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) fT MPS3638 MPS3638A Cobo MPS3638 MPS3638A Small–Signal Current Gain (IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) pF Cibo MPS3638 MPS3638A Input Impedance (IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) MHz hie pF X 10– 4 hre MPS3638 MPS3638A hfe MPS3638 MPS3638A Output Admittance (IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) kΩ — SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time (VCC = –10 Vdc, IC = –300 mAdc, IB1 = –30 mAdc) 2. Pulse Test: Pulse Width 2 v 300 ms; Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS3638,A SWITCHING TIME EQUIVALENT TEST CIRCUIT – 30 V – 30 V 200 Ω < 2 ns 200 Ω < 20 ns +2 V +14 V 0 0 1.0 kΩ – 16 V 1.0 kΩ CS* < 10 pF 10 to 100 µs, DUTY CYCLE = 2% –16 V CS* < 10 pF 1.0 to 100 µs, DUTY CYCLE = 2% + 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time Figure 2. Turn–Off Time TRANSIENT CHARACTERISTICS 25°C 100°C 30 10 7.0 5.0 VCC = 30 V IC/IB = 10 Ceb 3.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 10 7.0 Ccb 5.0 2.0 1.0 0.7 0.5 QT 0.3 QA 0.2 2.0 0.1 0.2 0.3 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS) 20 30 Figure 3. Capacitances Motorola Small–Signal Transistors, FETs and Diodes Device Data 0.1 10 20 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 500 Figure 4. Charge Data 3 MPS3638,A TRANSIENT CHARACTERISTICS (Continued) 25°C 100°C 100 100 IC/IB = 10 70 70 50 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 20 t r , RISE TIME (ns) t, TIME (ns) VCC = 30 V IC/IB = 10 50 30 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 200 100 300 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise Time 300 500 200 t s′, STORAGE TIME (ns) IC/IB = 10 100 IC/IB = 20 70 50 IB1 = IB2 ts′ = ts – 1/8 tf 30 20 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS3638,A SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VCE = –10 Vdc, TA = 25°C Bandwidth = 1.0 Hz 10 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8 IC = 1.0 mA, RS = 430 Ω IC = 500 µA, RS = 560 Ω IC = 50 µA, RS = 2.7 kΩ IC = 100 µA, RS = 1.6 kΩ 6 4 2 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 IC = 50 µA 100 µA 500 µA 1.0 mA 6 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 8. Frequency Effects Figure 9. Source Resistance Effects 50 k h PARAMETERS VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C selected from both the 2N4402 and 2N4403 lines, and the This group of graphs illustrates the relationship between same units were used to develop the correspondingly– hfe and other “h” parameters for this series of transistors. To numbered curves on each graph. obtain these curves, a high–gain and a low–gain unit were 100 k 700 50 k hfe , CURRENT GAIN 500 300 200 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 100 70 50 hie , INPUT IMPEDANCE (OHMS) 1000 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 100 5.0 7.0 10 0.3 0.5 0.7 1.0 2.0 3.0 Figure 10. Current Gain Figure 11. Input Impedance 5.0 7.0 10 500 10 hoe, OUTPUT ADMITTANCE (m mhos) h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 0.2 IC, COLLECTOR CURRENT (mAdc) 20 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.1 IC, COLLECTOR CURRENT (mAdc) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 50 20 10 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance Motorola Small–Signal Transistors, FETs and Diodes Device Data 5.0 7.0 10 5 MPS3638,A STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125°C 25°C 1.0 – 55°C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 70 50 100 200 300 500 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 0.5 TJ = 25°C 0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(sat) @ VCE = 10 V COEFFICIENT (mV/ °C) VOLTAGE (VOLTS) 1.0 0.4 0.2 qVC for VCE(sat) 0.5 1.0 1.5 qVS for VBE 2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 16. “On” Voltages 6 500 2.5 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 Figure 17. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS3638,A PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 7 MPS3638,A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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