MOTOROLA MPS3638A Switching transistor Datasheet

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by MPS3638/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–25
Vdc
Collector – Emitter Voltage
VCES
–25
Vdc
Collector – Base Voltage
VCBO
–25
Vdc
Emitter – Base Voltage
VEBO
–4.0
Vdc
Collector Current — Continuous
IC
–500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA(1)
200
°C/W
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage
(IC = –100 mAdc, VBE = 0)
V(BR)CES
–25
—
Vdc
Collector – Emitter Sustaining Voltage(2)
(IC = –10 mAdc, IB = 0)
VCEO(sus)
–25
—
Vdc
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
V(BR)CBO
–25
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
V(BR)EBO
–4.0
—
Vdc
—
—
–0.035
–2.0
Characteristic
OFF CHARACTERISTICS
mAdc
Collector Cutoff Current
(VCE = –15 Vdc, VBE = 0)
(VCE = –15 Vdc, VBE = 0, TA = –65°C)
ICES
Emitter Cutoff Current
(VEB = –3.0 V, IC = 0)
IEBO
—
–35
nA
IB
—
–0.035
mAdc
Base Current
(VCE = –15 Vdc, VBE = 0)
1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
300 ms; Duty Cycle
2.0%.
v
v
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
MPS3638,A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(2)
DC Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc)
MPS3638A
hFE
80
—
(IC = –10 mAdc, VCE = –10 Vdc)
MPS3638
MPS3638A
20
100
—
—
(IC = –50 mAdc, VCE = –1.0 Vdc)
MPS3638
MPS3638A
30
100
—
—
(IC = –300 mAdc, VCE = –2.0 Vdc)
MPS3638
MPS3638A
20
20
—
—
—
—
–0.25
–1.0
—
–0.80
–1.1
–2.0
100
150
—
—
—
—
20
10
—
—
65
25
—
2000
—
—
26
15
25
100
—
—
hoe
—
1.2
mmhos
td
—
20
ns
tr
—
70
ns
ts
—
140
ns
Fall Time
(VCC = –10 Vdc, IC = –300 mAdc,
IB1 = –30 mAdc, IB2 = –30 mAdc)
tf
—
70
ns
Turn–On Time
(IC = –300 mAdc, IB1 = –30 mAdc)
ton
—
75
ns
Turn–Off Time
(IC = –300 mAdc, IB1 = –30 mAdc, IB2 = 30 mAdc)
toff
—
170
ns
Collector – Emitter Saturation Voltage
(IC = –50 mAdc, IB = –2.5 mAdc)
(IC = –300 mAdc, IB = –30 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage
(IC = –50 mAdc, IB = –2.5 mAdc)
(IC = –300 mAdc, IB = –30 mAdc)
VBE(sat)
—
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(VCE = –3.0 Vdc, IC = –50 mAdc, f = 100 MHz)
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
fT
MPS3638
MPS3638A
Cobo
MPS3638
MPS3638A
Small–Signal Current Gain
(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
pF
Cibo
MPS3638
MPS3638A
Input Impedance
(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
MHz
hie
pF
X 10– 4
hre
MPS3638
MPS3638A
hfe
MPS3638
MPS3638A
Output Admittance
(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
kΩ
—
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
(VCC = –10 Vdc, IC = –300 mAdc, IB1 = –30 mAdc)
2. Pulse Test: Pulse Width
2
v 300 ms; Duty Cycle v 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPS3638,A
SWITCHING TIME EQUIVALENT TEST CIRCUIT
– 30 V
– 30 V
200 Ω
< 2 ns
200 Ω
< 20 ns
+2 V
+14 V
0
0
1.0 kΩ
– 16 V
1.0 kΩ
CS* < 10 pF
10 to 100 µs,
DUTY CYCLE = 2%
–16 V
CS* < 10 pF
1.0 to 100 µs,
DUTY CYCLE = 2%
+ 4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
TRANSIENT CHARACTERISTICS
25°C
100°C
30
10
7.0
5.0
VCC = 30 V
IC/IB = 10
Ceb
3.0
Q, CHARGE (nC)
CAPACITANCE (pF)
20
10
7.0
Ccb
5.0
2.0
1.0
0.7
0.5
QT
0.3
QA
0.2
2.0
0.1
0.2 0.3
2.0 3.0 5.0 7.0 10
0.5 0.7 1.0
REVERSE VOLTAGE (VOLTS)
20
30
Figure 3. Capacitances
Motorola Small–Signal Transistors, FETs and Diodes Device Data
0.1
10
20
200
30
50 70 100
IC, COLLECTOR CURRENT (mA)
300
500
Figure 4. Charge Data
3
MPS3638,A
TRANSIENT CHARACTERISTICS (Continued)
25°C
100°C
100
100
IC/IB = 10
70
70
50
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0
30
20
t r , RISE TIME (ns)
t, TIME (ns)
VCC = 30 V
IC/IB = 10
50
30
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50
70
200
100
300
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Rise Time
300
500
200
t s′, STORAGE TIME (ns)
IC/IB = 10
100
IC/IB = 20
70
50
IB1 = IB2
ts′ = ts – 1/8 tf
30
20
10
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPS3638,A
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = –10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
10
10
f = 1 kHz
8
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8
IC = 1.0 mA, RS = 430 Ω
IC = 500 µA, RS = 560 Ω
IC = 50 µA, RS = 2.7 kΩ
IC = 100 µA, RS = 1.6 kΩ
6
4
2
4
2
RS = OPTIMUM SOURCE RESISTANCE
0
0.01 0.02 0.05 0.1 0.2
IC = 50 µA
100 µA
500 µA
1.0 mA
6
0
0.5 1.0 2.0 5.0
10
20
50
100
50
100
200
500
1k
2k
5k
10 k 20 k
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
50 k
h PARAMETERS
VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C
selected from both the 2N4402 and 2N4403 lines, and the
This group of graphs illustrates the relationship between
same units were used to develop the correspondingly–
hfe and other “h” parameters for this series of transistors. To
numbered curves on each graph.
obtain these curves, a high–gain and a low–gain unit were
100 k
700
50 k
hfe , CURRENT GAIN
500
300
200
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
100
70
50
hie , INPUT IMPEDANCE (OHMS)
1000
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
20 k
10 k
5k
2k
1k
500
200
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
100
5.0 7.0 10
0.3
0.5 0.7 1.0
2.0
3.0
Figure 10. Current Gain
Figure 11. Input Impedance
5.0 7.0
10
500
10
hoe, OUTPUT ADMITTANCE (m mhos)
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 )
0.2
IC, COLLECTOR CURRENT (mAdc)
20
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
5.0
2.0
1.0
0.5
0.2
0.1
0.1
0.1
IC, COLLECTOR CURRENT (mAdc)
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
100
50
20
10
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
5.0
2.0
1.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
Figure 13. Output Admittance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5.0 7.0 10
5
MPS3638,A
STATIC CHARACTERISTICS
h FE, NORMALIZED CURRENT GAIN
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
30
70
50
100
200
300
500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 14. DC Current Gain
1.0
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
7.0
10
20
30
50
Figure 15. Collector Saturation Region
0.5
TJ = 25°C
0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(sat) @ VCE = 10 V
COEFFICIENT (mV/ °C)
VOLTAGE (VOLTS)
1.0
0.4
0.2
qVC for VCE(sat)
0.5
1.0
1.5
qVS for VBE
2.0
VCE(sat) @ IC/IB = 10
0
0.1 0.2
0.5
50 100 200
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 16. “On” Voltages
6
500
2.5
0.1 0.2
0.5
50 100 200
1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
500
Figure 17. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPS3638,A
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
7
MPS3638,A
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8
◊
Motorola Small–Signal Transistors, FETs and Diodes Device
Data
MPS3638/D
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