Dynex DSF11060SG Fast recovery diode Datasheet

DSF11060SG
DSF11060SG
Fast Recovery DioGH
DS4548 - JXO\ 20 /1 31791)
KEY PARAMETERS
VRRM
6000V
IF(AV)
400A
IFSM
4200A
Qr
700µC
trr
6.0µs
APPLICATIONS
■ Snubber Diode For GTO Circuits
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ Low Recovery Charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
6000
5800
5600
5500
Conditions
VRSM = VRRM + 100V
Lower voltage grades available.
Outline type code: M779b.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
400
A
IF(RMS)
RMS value
Tcase = 65oC
631
A
Continuous (direct) forward current
Tcase = 65oC
585
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
265
A
IF(RMS)
RMS value
Tcase = 65oC
420
A
Continuous (direct) forward current
Tcase = 65oC
365
A
IF
1/6
DSF11060SG
SURGE RATINGS
Symbol
IFSM
I2t
IFSM
I2t
Conditions
Parameter
Max.
Units
4.2
kA
88 x 103
A2s
3.4
kA
57.8 x 103
A2s
Surge (non-repetitive) forward current
10ms half sine; with 0% VRRM, Tj = 150oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% VRRM, Tj = 150oC
I2t for fusing
THERMAL AND MECHANICAL DATA
Symbol
Conditions
Parameter
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Min.
Max.
Units
dc
-
0.032
o
Anode dc
-
0.064
o
Cathode dc
-
0.064
o
Double side
-
0.008
o
Single side
-
0.016
o
-
135
o
C/W
C/W
Single side cooled
Rth(c-h)
Thermal resistance - case to heatsink
Clamping force 12kN
with mounting compound
C/W
C/W
C/W
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
125
o
Clamping force
10.8
13.2
kN
Typ.
Max.
Units
-
Forward (conducting)
C
C
CHARACTERISTICS
Symbol
Conditions
VFM
Forward voltage
At 600A peak, Tcase = 25oC
-
3.8
V
IRRM
Peak reverse current
At VRRM, Tcase = 125oC
-
70
mA
6.0
-
µs
-
1000
µC
350
-
A
1.7
-
-
trr
QRA1
Reverse recovery time
Recovered charge (50% chord)
IF = 1000A, diRR/dt = 100A/µs
IRM
Reverse recovery current
Tcase = 125oC, VR = 100V
K
Soft factor
VTO
Threshold voltage
At Tvj = 125oC
-
1.5
V
rT
Slope resistance
At Tvj = 125oC
-
2.9
mΩ
Forward recovery voltage
di/dt = 1000A/µs, Tj = 100oC
-
400
V
VFRM
2/6
Parameter
DSF11060SG
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
dIR/dt
t1
k = t1/t2
t2
τ
0.5x IRR
IRR
CURVES
100000
QS = ∫
IF
50µs
Conditions:
0
Tj = 125˚C,
VR = 100V
Reverse recovered charge QS - (µC)
QS
tp = 1ms
dIR/dt
10000
IRR
A
B
C
1000
D
E
A: IF = 2000A
B: IF = 1000A
C: IF = 500A
D: IF = 200A
100
E: IF = 100A
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig. 1 Recovered charge
3/6
DSF11060SG
10000
Conditions:
Tj = 125˚C,
Reverse recovery current IRR - (A)
VR = 100V
1000
A
B
C
D
E
100
A: IF = 2000A
B: IF = 1000A
C: IF = 500A
D: IF = 200A
10
E: IF = 100A
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig. 5 typical reverse recovery current vs rate of rise of reverse current
0.100
Thermal impedance - (˚C/W)
d.c. Double side cooled
0.010
0.001
0.01
0.1
1
Time - (s)
10
Fig. 3 Maximum (limit) transient thermal impedance - junction to case - (˚CW)
4/6
100
DSF11060SG
PACKAGE DETAILS
(Alternative outline G includes gate connections, all other details are the same as M779b).
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6x2.0 deep (in both electrodes)
Cathode
Ø58.5 max
27.0
25.4
Ø34 nom
Ø34 nom
Anode
Nominal weight: 310g
Clamping force: 12kN ±10%
Package outine type code: M779b
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Recommendations for clamping power semiconductors
AN4839
Thyristor and diode measurement with a multi-meter
AN4853
Use of VTO, rT on-state characteristic
AN5001
5/6
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Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the
product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include
potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design
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DYNEX SEMICONDUCTOR LIMITED
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Technical Documentation – Not for resale.
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