MPSA12 MPSA13 MPSA14 SILICON NPN DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA12 series devices are silicon NPN Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCES Emitter-Base Voltage Operating and Storage Junction Temperature MPSA13 30 MPSA14 30 UNITS V 20 30 30 V VEBO IC Continuous Collector Current Power Dissipation MPSA12 - 10 V 500 mA 625 mW PD TJ, Tstg -65 to +150 °C JA 200 °C/W Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO CHARACTERISTICS: (TA=25°C) TEST CONDITIONS VCB=15V VCB=30V - - - 100 - 100 ICES VCE=15V - 100 - - - - nA IEBO - 100 - 100 - 100 nA BVCES VEB=10V IC=100μA 20 - 30 - 30 - V VCE(SAT) IC=10mA, IB=10μA - 1.0 - - - - V VCE(SAT) IC=100mA, IB=100μA VCE=5.0V, IB=10mA - - - 1.5 - 1.5 V - 1.4 - - - - V - - - 2.0 - 2.0 V 20K - 5K - 10K - - - 10K - 20K - - - 125 - 125 - VBE(ON) VBE(ON) hFE hFE fT VCE=5.0V, IB=100mA VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA VCE=5.0V, IC=10mA, f=100MHz MPSA12 MIN MAX 100 MPSA13 MIN MAX - MPSA14 MIN MAX - UNITS nA nA MHz R1 (18-March 2014) MPSA12 MPSA13 MPSA14 SILICON NPN DARLINGTON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (18-March 2014) w w w. c e n t r a l s e m i . c o m MPSA12 MPSA13 MPSA14 SILICON NPN DARLINGTON TRANSISTORS TYPICAL ELECTRICAL CHARACTERISTICS R1 (18-March 2014) w w w. c e n t r a l s e m i . c o m