SemiHow HFP2N60U Superior avalanche rugged technology Datasheet

BVDSS = 600 V
RDS(on) typ = ȍ
HFP2N60U
ID = 2 A
600V N-Channel MOSFET
TO-220
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
1
2
3
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 5.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 4 ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
VDSS
TC=25୅ unless otherwise specified
Parameter
Drain-Source Voltage
Value
Units
600
V
Drain Current
– Continuous (TC = 25୅)
2.0
A
Drain Current
– Continuous (TC = 100୅)
1.3
A
IDM
Drain Current
– Pulsed
8.0
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
116
mJ
IAR
Avalanche Current
(Note 1)
2.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
5.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25୅)
- Derate above 25୅
54
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
ID
(Note 1)
0.43
W/୅
-55 to +150
୅
300
୅
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
Junction-to-Case
RșCS
Case-to-Sink
RșJA
Junction-to-Ambient
Typ.
Max.
--
2.32
0.5
--
--
62.5
Units
୅/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͤ͑͢͡
HFP2N60U
Nov 2013
Device Marking
Week Marking
Package
Packing
Quantity
RoHS Status
HFP2N60U
YWWX
TO-220
Tube
50
Pb Free
HFP2N60U
YWWXg
TO-220
Tube
50
Halogen Free
Electrical Characteristics TC=25 qC
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1.0 A
--
4.0
5.0
Ÿ
VGS = 0 V, ID = 250 Ꮃ
600
--
--
V
--
0.6
--
V/୅
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ǻBVDSS Breakdown Voltage Temperature
Coefficient
/ǻTJ
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
ID = 250 Ꮃ, Referenced to 25୅
VDS = 600 V, VGS = 0 V
--
--
1
Ꮃ
VDS = 480 V, TC = 125୅
--
--
10
Ꮃ
VGS = ρ30 V, VDS = 0 V
--
--
ρ100
Ꮂ
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
320
420
Ꮔ
--
38
50
Ꮔ
--
6.5
8.5
Ꮔ
--
20
50
Ꭸ
--
20
50
Ꭸ
--
30
70
Ꭸ
--
20
50
Ꭸ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 300 V, ID = 2.0 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 480 V, ID = 2.0 A,
VGS = 10 V
(Note 4,5)
--
5.5
7.5
nC
--
1.8
--
nC
--
3.5
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
2.0
ISM
Pulsed Source-Drain Diode Forward Current
--
--
8.0
VSD
Source-Drain Diode Forward Voltage
IS = 2.0 A, VGS = 0 V
--
--
1.4
V
IS = 2.0 A, VGS = 0 V
diF/dt = 100 A/ȝV
(Note 4)
--
206
--
Ꭸ
--
0.76
--
ȝ&
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=53mH, IAS=2A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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HFP2N60U
Package Marking and Odering Information
HFP2N60U
Typical Characteristics
10
101
ID, Drain Current [A]
ID, Drain Current [A]
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
25oC
150oC
-25oC
* Notes :
1. 300us Pulse Test
2. TC = 25oC
10-1
* Notes :
1. VDS= 30V
2. 300us Pulse Test
0.1
2
4
VDS, Drain-Source Voltage [V]
6
8
10
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
RDS(ON) [:],
Drain-Source On-Resistance
10
8
VGS = 10V
6
4
VGS = 20V
2
10
1
150oC
25oC
* Notes :
1. VGS= 0V
2. 300us Pulse Test
Note : TJ = 25oC
0
0
2
4
6
0.1
0.0
0.2
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
500
0.4
0.6
* Note ;
1. VGS = 0 V
2. f = 1 MHz
100
Crss
0
10-1
100
VGS, Gate-Source Voltage [V]
Capacitances [pF]
Coss
200
VDS = 120V
VDS = 300V
10
VDS = 480V
8
6
4
2
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
1.2
12
400
300
1.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
0.8
VSD, Source-Drain Voltage [V]
Note : ID = 2.0A
0
0
1
2
3
4
5
6
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͤ͑͢͡
(continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.2
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HFP2N60U
Typical Characteristics
1.1
1.0
0.9
Note :
1. VGS = 0 V
2. ID = 250PA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 1 A
0.5
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
2.0
Operation in This Area
is Limited by R DS(on)
101
100 Ps
ID, Drain Current [A]
100
DC
10-1
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
1.0
0.5
0.0
25
103
50
Figure 9. Maximum Safe Operating Area
100
100
125
150
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
0.2
* Notes :
1. ZTJC(t) = 2.32 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.1
0.05
10-1
75
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
ZTJC(t), Thermal Response
ID, Drain Current [A]
1.5
1 ms
10 ms
100 ms
0.02
PDM
0.01
single pulse
t1
-2
10
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
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HFP2N60U
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͤ͑͢͡
HFP2N60U
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͤ͑͢͡
HFP2N60U
Package Dimension
{vTYYWGOhPG
0
4.50±0.20
1.30±0.20
6.50±0.20
ij
.2
9.19±0.20
2.80±0.20
1.27±0.20
1.52±0.20
±0
2.40±0.20
3.02±0.20
13.08±0.20
15.70±0.20
9.90±0.20
0.80±0.20
2.54typ
2.54typ
0.50±0.20
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͤ͑͢͡
HFP2N60U
Package Dimension
{vTYYWGOiPG
±0.20
0
.2
±0
4.57±0.20
6.30±0.20
1.27±0.20
9.14±0.20
2.74±0.20
15.44±0.20
ij
1.27±0.20
2.67±0.20
13.28±0.20
2.67±0.20
0.81±0.20
2.54typ
2.54typ
0.40±0.20
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͤ͑͢͡