MPSW51, MPSW51A One Watt High Current Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Symbol MPSW51 MPSW51A MPSW51 MPSW51A Emitter −Base Voltage VCEO VCBO Value Unit Vdc −30 −40 −5.0 Vdc Collector Current − Continuous IC −1000 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 W mW/°C TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic 1 EMITTER Vdc −40 −50 VEBO Operating and Storage Junction Temperature Range 2 BASE Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Resistance, Junction−to−Case RqJC 50 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 12 1 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK TO−92 1 WATT (TO−226) CASE 29−10 STYLE 1 MARKING DIAGRAM MPS W51x AYWW G G x = 51A Devices A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 August, 2010 − Rev. 4 1 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: MPSW51/D MPSW51, MPSW51A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −30 −40 − − −40 −50 − − −5.0 − − − −0.1 −0.1 − −0.1 55 60 50 − − − − −0.7 − −1.2 50 − − 30 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0) MPSW51 MPSW51A Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) MPSW51 MPSW51A Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO Collector Cutoff Current (VCB = −30 Vdc, IE = 0) (VCB = −40 Vdc, IE = 0) MPSW51 MPSW51A Emitter Cutoff Current (VEB = −3.0 Vdc, IC = 0) ICBO IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) (IC = −1000 mAdc, VCE = −1.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −1000 mAdc, IB = −100 mAdc) VCE(sat) Base −Emitter On Voltage (IC = −1000 mAdc, VCE = −1.0 Vdc) VBE(on) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS fT Current−Gain − Bandwidth Product (IC = −50 mAdc, VCE = −10 Vdc, f = 20 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo MHz pF 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Package Shipping† MPSW51G TO−92 (Pb−Free) 5000 Units / Bulk MPSW51AG TO−92 (Pb−Free) 5000 Units / Bulk MPSW51RLRAG TO−92 (Pb−Free) 2000 / Tape & Reel MPSW51ARLRPG TO−92 (Pb−Free) 2000 / Ammo Pack Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MPSW51, MPSW51A -1.0 VCE , COLLECTOR VOLTAGE (VOLTS) h FE , CURRENT GAIN 200 100 70 VCE = -1.0 V TJ = 25°C 50 20 -10 -20 -50 -100 -200 -500 -1000 VBE(ON) @ VCE = -1.0 V VCE(SAT) @ IC/IB = 10 -5.0 -10 -20 -50 -100 -200 qV B, TEMPERATURE COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) -0.6 -0.4 -0.2 TJ = 25°C 0 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 Figure 2. Collector Saturation Region VBE(SAT) @ IC/IB = 10 0 -1.0 -2.0 IC = IC = IC = IC = -100 -250 -500 mA -1000 mA mA mA Figure 1. DC Current Gain -0.4 -0.2 IC = -50 mA IB, BASE CURRENT (mA) TJ = 25°C -0.6 IC = -10 mA IC, COLLECTOR CURRENT (mA) -1.0 -0.8 -0.8 -500 -1000 -0.8 -1.2 -1.6 qVB for VBE -2.0 -2.4 -2.8 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. “ON” Voltages Figure 4. Temperature Coefficient http://onsemi.com 3 -500 -1000 300 160 TJ = 25°C C, CAPACITANCE (pF) 200 VCE = -10 V TJ = 25°C f = 20 MHz 100 70 50 120 80 Cibo 40 Cobo 30 -10 0 -20 -50 -100 -200 -500 Cobo Cibo -1000 IC, COLLECTOR CURRENT (mA) -5.0 -1.0 Figure 5. Current Gain — Bandwidth Product -20 -10 -15 -2.0 -3.0 -4.0 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance -1.0 k 1.0 ms I C , COLLECTOR CURRENT (mA) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) MPSW51, MPSW51A -500 100 ms TA = 25°C TC = 25°C -200 -100 1.0 ms DUTY CYCLE ≤ 10% MPSW51 MPSW51A -50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -20 -10 -1.0 -2.0 -5.0 -10 -20 -30 -40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Active Region — Safe Operating Area http://onsemi.com 4 -25 -5.0 MPSW51, MPSW51A PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE O A B R STRAIGHT LEAD BULK PACK P L F K D X X G J H V C SECTION X−X N 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DI MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR A BENT LEAD TAPE & REEL AMMO PACK R B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.094 0.102 0.018 0.024 0.500 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 2.40 2.80 0.46 0.61 12.70 --2.04 2.66 --2.54 3.43 --3.43 --- ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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