Ordering number : ENN6899
CPH5802
CPH5802
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
DC / DC Converter Applications
Package Dimensions
unit : mm
2171
[CPH5802]
2.9
0.15
0.2
4
3
2.8
0.6
5
1.6
Composite type with a P-Channel Sillicon MOSFET
(MCH3306) and a Schottky Barrier Diode (SBS004)
contained in one package facilitating high-density
mounting.
[MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• Ultralow voltage drive (1.8V drive).
[SBD]
• Short reverse recovery time.
• Low forward voltage.
1
0.05
2
0.95
0.4
0.4
0.9
0.7
0.2
•
0.6
Features
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
--20
VDSS
VGSS
ID
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
Allowable Power Dissipation
PD
Mounted on a ceramic board (600mm2✕0.8mm) 1unit
V
±10
V
--2
A
--8
A
0.9
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +125
°C
[SBD]
Repetitive Peak Reverse Voltage
VRRM
15
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
IO
15
V
1
A
Average Output Current
Surge Forward Current
Junction Temperature
IFSM
Tj
Storage Temperature
Tstg
50Hz sine wave, 1 cycle
10
A
--55 to +125
°C
--55 to +125
°C
Marking : QC
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com
Rev.0 I Page
1 of 5 I www.onsemi.com
Publication Order Number:
CPH5802/D
CPH5802
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
VDS=--20V, VGS=0
VGS=±8V, VDS=0
--20
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
--0.3
Forward Transfer Admittance
VGS(off)
yfs
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--1A, VGS=--4V
ID=--0.5A, VGS=--2.5V
Input Capacitance
RDS(on)3
Ciss
ID=--0.1A, VGS=--1.8V
VDS=--10V, f=1MHz
Zero-Gate Voltage Drain Current
IDSS
IGSS
Gate-to-Source Leakage Current
Cutoff Voltage
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
2.1
µA
±10
µA
--1.0
V
110
145
mΩ
140
200
mΩ
180
260
mΩ
3.0
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
td(off)
tf
Fall Time
V
--10
S
410
pF
60
pF
40
pF
See specified Test Circuit
9
ns
See specified Test Circuit
27
ns
See specified Test Circuit
42
ns
See specified Test Circuit
38
ns
10
nC
0.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--2A
VDS=--10V, VGS=--10V, ID=--2A
VDS=--10V, VGS=--10V, ID=--2A
Diode Forward Voltage
VSD
IS=--2A, VGS=0
VR
VF1
IR=1mA
IF=0.5A
VF2
IF=1A
VR=6V
VR=10V, f=1MHz, 1 cycle
1.2
nC
--0.88
--1.2
V
0.30
0.35
V
0.35
0.40
V
500
µA
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
IR
Interterminal Capacitance
C
Reverse Recovery Time
trr
Thermal Resistance
15
V
42
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm2✕0.8mm)
Rth(j-a)
pF
15
110
ns
°C / W
Electrical Connection (Top view)
A
S
G
D
Switching Time Test Circuit
trr Test Circuit
[MOSFET]
[SBD]
Duty≤10%
VDD= --10V
VIN
D
PW=10µs
D.C.≤1%
50Ω
10µs
10Ω
--5V
G
P.G
100Ω
100mA
ID= --1A
RL= --10Ω
VOUT
VIN
100mA
0V
--4V
10mA
C
50Ω
trr
S
CPH5802
(MOSFET)
Rev.0 I Page 2 of 5 I www.onsemi.com
CPH5802
ID -- VDS
[MOSFET]
VDS= --10V
--3.5
--0.8
--2.5
--2.0
--1.5
--1.0
--0.4
25
°C
--0.5
--25
°C
VGS= --1.0V
--3.0
Ta=
75°
C
--1.2
ID -- VGS
--4.0
Drain Current, ID -- A
--10V --4.0V -3.0V
Drain Current, ID -- A
--1.6
[MOSFET]
--1.
8V
--1
.5V
--2.5V
--2.0
0
0
--0.1
0
--0.3
--0.2
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
0
--1.0
Drain-to-Source Voltage, VDS -- V
IT02753
RDS(on) -- VGS
[MOSFET]
400
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
Gate-to-Source Voltage, VGS -- V
IT02754
RDS(on) -- Ta
[MOSFET]
400
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
300
--1.0A
250
--0.5A
200
150
ID= --0.1A
100
50
0
0
--2
--6
--8
Forward Current, IF -- A
3
5°C
--2
=
a
T
C
75°
2
1.0
7
5
3
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
Drain Current, ID -- A
--40
--20
0
20
40
60
80
100
IF -- VSD
120
140
160
IT02756
[MOSFET]
VGS=0
3
2
--1.0
7
5
3
2
--0.1
7
5
td(off)
tf
tr
td(on)
10
7
5
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--1.2
Diode Forward Voltage, VSD -- V
IT02758
[MOSFET]
Ciss, Coss, Crss -- VDS
1000
VDD= --10V
VGS= --4V
3
2
--0.3
[MOSFET]
f=1MHz
7
5
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
50
--0.01
--0.2
5
3
2
Ciss
3
2
100
7
Coss
5
Crss
3
3
2
1.0
--0.1
100
IT02757
SW Time -- ID
1000
7
5
100
7
5
150
3
2
2
0.1
--0.01
V
= --1.8
, V GS
A
.1
0
I D= ---2.5V
V S=
0.5A, G
-=
ID
= --4.0V
A, V GS
.0
1
-=
ID
200
--10
7
5
5
C
25°
250
Ambient Temperature, Ta -- °C
VDS= --10V
7
300
0
--60
--10
Gate-to-Source Voltage, VGS -- V
IT02755
yfs -- ID
[MOSFET]
10
Forward Transfer Admittance, yfs -- S
--4
350
--25
°C
350
Ta
=7
5
25 °C
°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
2
10
2
3
5
7
--1.0
Drain Current, ID -- A
2
3
5
0
IT02759
Rev.0 I Page 3 of 5 I www.onsemi.com
--2
--4
--6
--8
--10
--12
--14
--16
Drain-to-Source Voltage, VDS -- V
--18
--20
IT02760
CPH5802
VGS -- Qg
--10
--10
7
5
Drain Current, ID -- A
--4
--3
--2
2
3
4
5
6
7
8
9
10
Total Gate Charge, Qg -- nC
D
C
11
op
er
3
2
s
at
io
n
Operation in this
area is limited by RDS(on).
--0.1
7
5
Ta=25°C
Single pulse
Mounted on a ceramic board(600mm2✕0.8mm) 1unit
IT02761
PD -- Ta
1.2
m
--0.01
--0.01 2 3
0
10
--1.0
7
5
3
2
100µs
--5
ID= --2A
s
0m
--6
--1
Allowable Power Dissipation, PD -- W
<10µs
IDP= --8A
10
--7
1
[MOSFET]
s
3
2
--8
0
ASO
1m
--9
Gate-to-Source Voltage, VGS -- V
[MOSFET]
VDS= --10V
ID= --2A
5 7--0.1
2 3
5 7--1.0
2 3
5 7 --10
2 3
5
Drain-to-Source Voltage, VDS -- V
IT02762
IR -- VR
[SBD]
[MOSFET]
1.0
M
0.9
ou
nte
do
0.8
na
ce
ram
ic
0.6
bo
ard
(6
00
mm
0.4
2
✕0
.8m
m)
0.2
1u
nit
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT02763
IF -- VF
[SBD]
3
100
7
5
3
2
°C
25
=1
a
T
7
5
°C
25
0°
C
3
2
°C
10
50
0.1
7
75
°C
Forward Current, IF -- A
1.0
Reverse Current, IR -- mA
2
5
3
2
0.01
100°C
10
7
5
3
2
75°C
1.0
7
5
3
2
50°C
25°C
0.1
7
5
3
2
0.01
0.1
0.2
0.3
0.4
0.5
Forward Voltage, VF -- V
PF(AV) -- IO
0.8
0.6
0.4
Rectangular wave
0.3
θ
0.2
Sine wave
360°
0.1
0
0.2
0.4
0.6
0.8
15
IT00623
C -- VR
1000
[SBD]
f=1MHz
3
2
100
7
5
3
2
10
7
5
3
2
180°
360°
0
10
7
5
(3)
(2) (4)
(1)
0.5
5
Reverse Voltage, VR -- V
[SBD]
(1) Rectangular wave θ=60°
(2) Rectangular wave θ=120°
(3) Rectangular wave θ=180°
(4) Sine wave θ=180°
0.7
0
IT00622
Interterminal Capacitance, C -- pF
0
Average Forward Power Dissipation, PF(AV) -- W
Ta=125°C
1.0
1.2
Average Forward Current, IO -- A
1.4
1.0
1.0
IT00624
Rev.0 I Page 4 of 5 I www.onsemi.com
2
3
5
7
Reverse Voltage, VR -- V
10
2
IT00625
CPH5802
IS -- t
Surge Forward Current, IFSM(Peak) -- A
12
[SBD]
Current waveform 50Hz sine wave
Is
10
20ms
t
8
6
4
2
0
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
Time, t -- s
2
3
IT00626
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products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of
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can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer’s
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* 2/ / 1 CPH5802/D