OM6017SA OM6019SA OM6018SA OM6020SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels Same as IRFM 150 - 450 Series Ceramic Feedthroughs Available DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS @ 25°C PART NUMBER OM6017SA OM6018SA OM6019SA OM6020SA VDS 100 V 200 V 400 V 500 V SCHEMATIC 4 11 R4 Supersedes 1 07 R3 RDS(on) .065 .100 .33 .42 ID 25 A 25 A 13 A 11 A POWER RATING 3.1 - 85 3.1 (TC = 25°C unless otherwise noted) STATIC P/N OM6017SA Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) Gate-Threshold Voltage IGSSF IGSSR IDSS Min. Typ. Max. Units Test Conditions 100 Parameter VGS = 0, BVDSS ID = 250 mA Drain-Source Breakdown Voltage 4.0 V VDS = VGS, ID = 250 mA VGS(th) Gate-Threshold Voltage Gate-Body Leakage Forward 100 nA VGS = +20 V IGSSF Gate-Body Leakage Reverse - 100 nA VGS = -20 V 0.25 mA VDS = Max. Rat., VGS = 0 Zero Gate Voltage Drain ID(on) On-State Drain Current1 VDS(on) Static Drain-Source On-State 0.1 0.2 1.0 35 1.1 Voltage1 Static Drain-Source On-State 1.3 mA (TC = 25°C unless otherwise noted) Static Drain-Source On-State .09 V VGS = 10 V, ID = 20 A 100 nA VGS = + 20 V IGSSR Gate-Body Leakage Reverse -100 nA VGS = - 20 V IDSS Zero Gate Voltage Drain 0.25 mA 0.1 Current 0.2 ID(on) On-State Drain Current1 VDS(on) Static Drain-Source On-State RDS(on) 1.36 1.60 Static Drain-Source On-State mA Static Drain-Source On-State VDS = VGS, ID = 250 mA VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C A VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A .085 .100 VGS = 10 V, ID = 16 A, 0.14 0.17 Resistance1 TC = 125 C 1.0 30 Resistance1 DYNAMIC ID = 250 mA Gate-Body Leakage Forward RDS(on) VGS = 10 V, ID = 20 A, VGS = 0, V Voltage1 VGS = 10 V, ID = 20 A V 2.0 TC = 125° C VDS 2 VDS(on), VGS = 10 V 0.11 200 TC = 125 C DYNAMIC (W ) gfs Forward Transductance1 gfs Forward Transductance1 Ciss Input Capacitance 2700 pF VGS = 0 Ciss Input Capacitance 2400 pF VGS = 0 Coss Output Capacitance 1300 pF VDS = 25 V Coss Output Capacitance 600 pF VDS = 25 V Crss Reverse Transfer Capacitance 470 pF f = 1 MHz Crss Reverse Transfer Capacitance 250 pF f = 1 MHz td(on) Turn-On Delay Time 28 ns VDD = 30 V, ID @ 20 A td(on) Turn-On Delay Time 25 ns VDD = 75 V, ID @ 16 A 9.0 S(W ) VDS 2 VDS(on), ID = 20 A (W ) 3.1 - 86 Resistance1 Min. Typ. Max. Units Test Conditions 4.0 VDS = 0.8 Max. Rat., VGS = 0, A 0.55 0.65 Resistance1 RDS(on) V 2.0 Current RDS(on) ELECTRICAL CHARACTERISTICS: STATIC P/N OM6018SA 10.0 S(W ) VDS 2 VDS(on), ID = 16 A tr Rise Time 45 ns Rg = 5.0 W , VG = 10V tr Rise Time 60 ns Rg = 5.0 W ,VGS = 10V td(off) Turn-Off Delay Time 100 ns td(off) Turn-Off Delay Time 85 ns tf Fall Time 50 ns (MOSFET switching times are essentially independent of operating temperature.) tf Fall Time 38 ns (MOSFET switching times are essentially independent of operating temperature.) BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current - 40 (Body Diode) ISM Source Current1 (Body Diode) VSD Diode Forward Voltage1 trr Reverse Recovery Time 400 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. A - 160 A - 2.5 V ns BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER D IS (Body Diode) symbol showing the integral P-N Continuous Source Current G Junction rectifier. ISM TJ = 150 C, IF = IS, dlF/ds = 100 A/ms (Body Diode) S TC = 25 C, IS = -40 A, VGS = 0 Source Current1 VSD Diode Forward Voltage1 trr Reverse Recovery Time 350 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. - 30 A - 120 A -2 V ns Modified MOSPOWER D symbol showing the integral P-N G Junction rectifier. S TC = 25 C, IS = -30 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms OM6017SA - OM6020SA 3.1 ELECTRICAL CHARACTERISTICS: ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted) STATIC P/N OM6019SA BVDSS Drain-Source Breakdown Voltage VGS(th) Gate-Threshold Voltage IGSSF IGSSR IDSS Min. Typ. Max. Units Test Conditions 400 2.0 ID = 250 mA Drain-Source Breakdown Voltage VDS = VGS, ID = 250 mA VGS(th) Gate-Threshold Voltage Gate-Body Leakage Forward 100 nA VGS = +20 V IGSSF Gate-Body Leakage Reverse - 100 nA VGS = - 20 V 0.25 mA VDS = Max. Rat., VGS = 0 Zero Gate Voltage Drain On-State Drain Current1 VDS(on) Static Drain-Source On-State 0.1 0.2 1.0 15 Voltage1 Static Drain-Source On-State Resistance1 RDS(on) BVDSS V Current RDS(on) V Parameter VGS = 0, 4.0 ID(on) (TC = 25°C unless otherwise noted) Static Drain-Source On-State 2.0 2.64 0.25 .33 mA 500 2.0 V VGS = 10 V, ID = 8.0 A 100 nA VGS = +20 V IGSSR Gate-Body Leakage Reverse - 100 nA VGS = - 20 V IDSS Zero Gate Voltage Drain 0.25 mA 0.1 Current ID(on) On-State Drain Current1 VDS(on) Static Drain-Source On-State RDS(on) 0.2 RDS(on) Static Drain-Source On-State Static Drain-Source On-State 2.94 0.3 0.42 VDS = VGS, ID = 250 mA VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C A VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.0 A, TC = 125 C DYNAMIC (W ) 3.1 - 87 DYNAMIC 2.1 mA 0.66 0.88 Resistance1 TC = 125 C 1.0 13 Resistance1 VGS = 10 V, ID = 8.0 A, ID = 250 mA Gate-Body Leakage Forward Voltage1 VGS = 10 V, ID = 8.0 A VGS = 0, V TC = 125° C VDS 2 VDS(on), VGS = 10 V V 4.0 VDS = 0.8 Max. Rat., VGS = 0, A 0.50 0.66 Resistance1 Min. Typ. Max. Units Test Conditions (W ) Parameter ELECTRICAL CHARACTERISTICS: STATIC P/N OM6020SA gfs Forward Transductance1 gfs Forward Transductance1 Ciss Input Capacitance 2900 pF VGS = 0 Ciss Input Capacitance 2600 pF VGS = 0 Coss Output Capacitance 450 pF VDS = 25 V Coss Output Capacitance 280 pF VDS = 25 V Crss Reverse Transfer Capacitance 150 pF f = 1 MHz Crss Reverse Transfer Capacitance 40 pF f = 1 MHz td(on) Turn-On Delay Time 30 ns VDD = 200 V, ID @ 8.0 A td(on) Turn-On Delay Time 30 ns VDD = 210 V, ID @ 7.0 A 6.0 S(W ) VDS 2 VDS(on), ID = 8.0 A 6.0 S(W ) VDS 2 VDS(on), ID = 7.0 A tr Rise Time 40 ns Rg =5.0 W , VGS =10V tr Rise Time 46 ns Rg = 5.0 W , VGS = 10 V td(off) Turn-Off Delay Time 80 ns td(off) Turn-Off Delay Time 75 ns tf Fall Time 30 ns (MOSFET switching times are essentially independent of operating temperature.) tf Fall Time 31 ns (MOSFET switching times are essentially independent of operating temperature.) BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current (Body Diode) Source Current1 (Body Diode) VSD Diode Forward Voltage1 trr Reverse Recovery Time 600 A - 60 A - 1.6 V ns D IS the integral P-N G Junction rectifier. ISM TJ = 100 C, IF = IS, dlF/ds = 100 A/ms Source Current1 (Body Diode) S TC = 25 C, IS = -15 A, VGS = 0 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. Continuous Source Current (Body Diode) symbol showing VSD Diode Forward Voltage1 trr Reverse Recovery Time 700 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. - 13 A - 52 A - 1.4 V ns Modified MOSPOWER D symbol showing the integral P-N G Junction rectifier. S TC = 25 C, IS = -13 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms 3.1 OM6017SA - OM6020SA ISM - 15 BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER OM6017SA - OM6020SA ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter OM6017SA OM6018SA OM6019SA OM6020SA Units VDS Drain-Source Voltage 100 200 400 500 V VDGR Drain-Gate Voltage (RGS = 1 M ) 100 200 400 500 V ID @ TC = 25°C Continuous Drain Current2 ±25 ±25 ±13 ±11 A ID @ TC = 100°C Continuous Drain Current2 ±16 ±16 ±8 ±7 A IDM Pulsed Drain Current1 ±100 ±80 ±54 ±40 A VGS Gate-Source Voltage ± 20 ± 20 ±20 ± 20 V PD @ TC = 25°C Maximum Power Dissipation 125 125 125 125 W PD @ TC = 100°C Maximum Power Dissipation 50 50 50 50 W Junction To Case Linear Derating Factor 1.0 1.0 1.0 1.0 W/°C Junction To Ambient Linear Derating Factor .020 .020 .020 .020 W/°C TJ Operating and Tstg Storage Temperature Range -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C 300 300 300 300 °C Lead Temperature (1/16" from case for 10 secs.) 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%. 2 Package Pin Limitation = 15 Amps THERMAL RESISTANCE RthJC Junction-to-Case 1.0 °C/W RthJA Junction-to-Ambient 50 °C/W Free Air Operation MECHANICAL OUTLINE .545 .535 .144 DIA. .050 .040 .940 .260 MAX .740 .540 .200 .100 2 PLCS. 3.1 .040 .290 .125 2 PLCS. .125 DIA. 2 PLS. .540 1 1 2 3 Pin 1: Drain Pin 2: Source Pin 3: Gate .500 MIN. .150 .040 DIA. 3 PLCS. .150 .300 .800 .790 .685 .665 .250 2 .550 .530 3 .550 .510 .005 .045 .035 .150 TYP. .260 .249 .150 TYP. PACKAGE OPTIONS MOD PAK Z-TAB 6 PIN SIP NOTES: Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information. 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246