GETEDZ HV500F08 High voltage silicon rectifier diode Datasheet

HV500F08
500mA 8.0kV 100nS--High voltage silicon rectifier diodes
HVGT high voltage silicon rectifier diodes is
made of high quality glass passivated chip and high
SHAPE DISPLAY:
reliability epoxy resin sealing structure, and through
professional testing equipment inspection qualified
after to customers.
FEATURES:
1. High reliability design.
2. High voltage design.
3. High frequency .
4. Conform to RoHS.
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
SIZE: (Unit:mm)
HVGT
NAME:
DO-721
APPLICATIONS:
1. High voltage multiplier circuit
2. Electrostatic generator circuit .
3. General purpose high voltage rectifier.
4. Other.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 2.1 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
VRRM
Ta=25°C
8.0
kV
IF
Ta=55°C; Resistive Load
500
mA
IFSM
Ta=25°C; 1/2 Sine(60Hz); 8.3mS
30
A
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
Data Value Units
Junction Temperature
TJ
-40~+150
°C
Allowable Operation Case Temperature
Tc
125
°C
TSTG
-40~+150
°C
Storage Temperature
ELECTRICAL CHARACTERISTICS:
Items
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Recovery Time
Junction Capacitance
Ta=25°C
(Unless otherwise specified)
Symbols
Condition
Data value Units
VF
at 25°C;IF =IF(AV)
14
V
IR1
at 25°C;VR =VRRM
5.0
uA
IR2
at 100°C;VR =VRRM
50
uA
TRR
at 25°C; IF=0.5IR; IR =IFAVM; IRR =0.25IR
100
nS
CJ
at 25°C; VR=0V; f=1MHz
6.1
pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected]
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638
2017 1 / 2
HV500F08
500mA 8.0kV 100nS--High voltage silicon rectifier diodes
Fig 1
Fig 2
Forward Current Derating Curve
Reverse Recovery Measurement Waveform
Average current rating at 55°C, unless otherwise specified.
Typical data capture points: IF =0.5IR , IR,IRR =0.25IR
Max operating temperature is 150°C ,unless otherwise
specified.
IR is typically the rated average forward current maximum
(IFAVM) of the D.U.T
Fig 3
Non-Repetitive Surge Current
Marking
Type
Code
HV500F08
HV500F 08
Cathode Mark
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected]
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638
2017 2 / 2
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