Renesas HAF2026RJ Silicon n channel power mos fet power switching Datasheet

Preliminary Datasheet
HAF2026RJ
R07DS0122EJ0300
(Previous: REJ03G1255-0200)
Rev.3.00
Sep 01, 2010
Silicon N Channel Power MOS FET
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features





Logic level operation (5 to 6 V Gate drive)
Built-in the over temperature shut-down circuit
High endurance capability against to the shut-down circuit
Latch type shut down operation (need 0 voltage recovery)
Built-in the current limitation circuit
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 (FP-8DAV))
8
5
7 6
D
D
1
2
G
Temperature
Sensing
Circuit
7
4
23
Gate Resistor
Latch
Circuit
Current
Limitation
Circuit
MOS1
5
4
G
Gate
Shut-down
Circuit
Temperature
Sensing
Circuit
1
S
D
D
8
Gate Resistor
Latch
Circuit
MOS2
6
Current
Limitation
Circuit
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Gate
Shut-down
Circuit
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
VDSS
60
Gate to source voltage
VGSS
16
Gate to source voltage
VGSS
–2.5
Drain current
ID
0.6
Body-drain diode reverse drain current
IDR
1
Note3
Avalanche current
IAP
0.6
Avalanche energy
EARNote3
1.54
Cannel dissipation
PchNote1
1
Cannel dissipation
PchNote2
1.5
Cannel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
2. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
3. Tc = 25C, Rg  50 
R07DS0122EJ0300 Rev.3.00
Sep 01, 2010
Unit
V
V
V
A
A
A
mJ
W
W
C
C
Page 1 of 7
HAF2026RJ
Preliminary
Typical Operation Characteristics
(Ta=25°C)
Item
Symbol
VIH
VIL
IIH1
IIH2
Input voltage
Input current
(Gate non shut down)
IIL
IIH(sd)1
Input current
(Gate shut down)
IIH(sd)2
Tsd
Vop
ID limt
Shut down temperature
Gate operation voltage
Drain current (Current limitation)
Min
3.5
—
—
—
—
—
—
—
3.5
0.6
Typ
—
—
—
—
—
0.53
0.23
175
—
—
Max
—
1.2
100
50
10
—
—
—
12
1.0
Unit
V
V
A
A
A
mA
mA
C
V
A
Test Conditions
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Vi = 1.2 V, VDS = 0
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Cannel temperature
Vi = 5 V, VDS = 3 V
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
ID1
ID2
ID3
Drain to source breakdown
voltage
V(BR)DSS
Gate to source breakdown
voltage
V(BR)GSS
Min
0.25
—
0.6
60
Typ
—
—
—
—
Max
—
10
1.0
—
Unit
A
mA
A
V
Test Conditions
VGS = 3.5 V, VDS = 2 V
VGS = 1.2 V, VDS = 2 V
VGS = 5 V, VDS = 3 V
ID = 10 mA, VGS = 0
—
—
—
—
—
—
0.53
0.23
—
—
—
1.3
200
150
140
2.9
11
0.9
1
0.9
—
—
100
50
10
–100
—
—
10
10
2.5
—
300
210
—
—
—
—
—
—
V
V
A
A
A
A
mA
mA
A
A
V
S
m
m
pF
s
s
s
s
V
IG = 800 A, VDS = 0
IG = –100 A, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 60 V, VGS = 0
VDS = 48 V, VGS = 0, Ta = 125C
VDS = 10 V, ID = 1 mA
ID = 0.5 A, VDS = 10 VNote4
ID = 0.5 A, VGS = 5 VNote4
ID = 0.5 A, VGS = 10 VNote4
VDS = 10 V, VGS = 0, f = 1MHz
VGS = 5 V, ID= 0.5 A, RL = 60 
Body-drain diode forward
voltage
VDF
16
–2.5
—
—
—
—
—
—
—
—
1.4
0.26
—
—
—
—
—
—
—
—
Body-drain diode reverse
recovery time
trr
—
61
—
ns
IF = 1 A, VGS = 0, diF/dt = 50 A/s
tos1
—
—
85
30
—
—
ms
ms
VGS = 5 V, VDD = 16 V
VGS = 5 V, VDD = 24 V
Gate to source leak current
Input current (shut down)
Zero gate voltage drain
current
Gate to source cut off voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
Rise time
Turn off delay time
Fall time
Over load shut down
note5
operation time
V(BR)GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS(OP)1
IGS(OP)2
IDSS1
IDSS2
VGS(off)
|yfs|
RDS(on)
RDS(on)
Coss
td(on)
tr
td(off)
tf
tos2
IF = 1 A, VGS = 0
Notes: 4. Pulse test
5. Including the junction temperature rise of the over lorded condition.
R07DS0122EJ0300 Rev.3.00
Sep 01, 2010
Page 2 of 7
HAF2026RJ
Preliminary
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
10
2.0
50
n
0.1
1 shot Pulse
1 Driver Operation
n
100
150
0.01
0.01 0.03 0.1 0.3
200
3
10
30 100
Note 6:
When using the glass epoxy board.
( FR4 40 x 40 x 1.6 mm)
Typical Transfer Characteristics
1.0
2.0
Pulse Test
VDS = 10 V
Pulse Test
1.6
Drain Current ID (A)
Drain Current ID (A)
1
Drain Source Voltage VDS (V)
Typical Output Characteristics
0.8
m
s
0.03 Ta = 25°C
atio
Ambient Temperature Ta (°C)
1.2
10
s
10
per
=
e6
ot
rO
Operation
in this area
is limited by RDS(on)
N
tio
rive
0
Op
era
1D
PW
0.3
<
PW
er
1.0
1 ms
1
n
tio
ra
pe
riv
3
O
2D
Thermal shut down
operation area
C
Drain Current ID (A)
3.0
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
D
Channel Dissipation Pch (W)
4.0
10 V
5V
VGS = 3.5 V
0.4
0.8
0.6
0.4
75°C
0.2
25°C
Tc = -25°C
2
4
6
8
10
0
2
3
4
5
Gate to Source Voltage VGS (V)
Drain to Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source State Resistance
vs. Drain Current
200
Pulse Test
160
120
ID = 0.5 A
80
40
0
1
Drain to Source Voltage VDS (V)
Drain Source On Sate Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage
VDS(on) (mV)
0
0.2 A
2
4
6
8
Gate to Source Voltage VGS (V)
R07DS0122EJ0300 Rev.3.00
Sep 01, 2010
10
500
VGS = 5 V
200
100
VGS = 10 V
50
20
10
0.01 0.02
Pulse Test
0.05 0.1 0.2
0.5
1
2
Drain Current ID (A)
Page 3 of 7
HAF2026RJ
Preliminary
Forward Transfer Admittance vs.
Drain Current
400
ID = 0.5 A, 0.2 A
300
VGS = 5 V
200
ID = 0.5 A, 0.2 A
100
0
–25
VGS = 10 V
0
25
50
75
100 125 150
10
VDS =10 V
3 Pulse Test
1
25°C
0.3
75°C
0.1
0.03
0.01
0.003
0.001
0.01
0.1
0.3
1
Body to Drain Diode Reverse
Recovery Time
Switching Characteristics
100
Switching Time t (μs)
200
100
50
20
10
5
2
1
0.01 0.02
di / dt = 50 A / μs
VGS = 0, Ta = 25°C
0.05
0.1
0.2
0.5
VGS = 5 V, VDD = 30 V
PW = 300 μs, duty < 1 %
30
tr
10
td(on)
3
tf
1
td(off)
0.3
0.1
0.001 0.003 0.01 0.03
1
0.1
0.3
Reverse Drain Current IDR (A)
Drain Current ID (A)
Reverse Drain Current vs.
Source to Drain Voltage
Typical capacitance vs.
Drain to Source Voltage
1
1000
Pulse Test
0.8
VGS = 5 V
0V
0.4
0.2
0
0.03
Drain Current ID (A)
500
0.6
Tc = –25°C
Case Temperature Tc (°C)
1000
1.0
Reverse Drain Current IDR (A)
Pulse Test
Forward Transfer Admittance |yfs| (S)
500
Capacitance Coss (pF)
Reverse Recovery Time trr (ns)
Drain Source On State Resistance
RDS(on) (mΩ)
Drain to Source On State Resistance
vs. Temperature
100
10
VGS = 0
f = 1 MHz
1
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage VSD (V)
R07DS0122EJ0300 Rev.3.00
Sep 01, 2010
0
10
20
30
40
50
Drain to Source VDS (V)
Page 4 of 7
HAF2026RJ
Preliminary
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
Gate to Source Voltage VGS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
12
10
VDD = 16 V
8
6
24 V
4
2
0
0.001
0.01
0.1
1
200
180
160
140
120
100
0
Shutdown Time of Lord-Short Test
PW (S)
ID = 0.2 A
2
4
6
8
10
Gate to Source Voltage VGS (V)
Repetitive Avalanche Energy EAR (mJ)
Avalanche Energy vs.
Channel Temperature Derating
2.0
IAP = 0.6 A
VDD = 25 V
duty < 0.1 %
Rg > 50 Ω
1.5
1
0.5
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
EAR =
L
1
2
VDSS
• L • IAP2 •
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
D. U. T
VDS
VDD
ID
Vin
5V
50 Ω
0
R07DS0122EJ0300 Rev.3.00
Sep 01, 2010
VDD
Page 5 of 7
Normalized Transient Thermal Impedance γs (t)
HAF2026RJ
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
D=1
0.5
0.1
0.1
0.05
0.2
0.02
0.01
θch-f(t) = γs (t) • θch - f
θch-f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
0.01
e
uls
p
ot
PDM
h
0.001
1s
D=
PW
T
PW
T
0.0001
10 μ
100 μ
1m
10 m
100 m
1
10
100
1000
10000
Normalized Transient Thermal Impedance γs (t)
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
θch-f(t) = γs (t) • θch - f
θch-f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
0.01
e
uls
0.001
PDM
p
ot
D=
h
1s
PW
T
PW
T
0.0001
10 μ
100 μ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vout
Vin
5V
50 Ω
VDD
= 30 V
10%
10%
90%
td(on)
R07DS0122EJ0300 Rev.3.00
Sep 01, 2010
10%
tr
90%
td(off)
tf
Page 6 of 7
HAF2026RJ
Preliminary
Package Dimensions
JEITA Package Code
P-SOP8-3.95 × 4.9-1.27
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
F
Package Name
SOP-8
*1 D
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
* 3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference
Symbol
A1
A
L1
L
y
D
E
A2
A1
A
bp
b1
c
c1
HE
e
x
y
Z
L
L1
Detail F
Dimension in Millimeters
Min
Nom Max
4.90 5.3
3.95
0.10 0.14 0.25
1.75
0.34 0.40 0.46
0.15 0.20
0.25
0°
8°
5.80 6.10 6.20
1.27
0.25
0.1
0.75
0.40 0.60 1.27
1.08
Ordering Information
Part Name
HAF2026RJ-EL-E
Quantity
2500 pcs
R07DS0122EJ0300 Rev.3.00
Sep 01, 2010
Shipping Container
Taping
Page 7 of 7
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