LM614
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SNOSC21C – MAY 1998 – REVISED MARCH 2013
LM614 Quad Operational Amplifier and Adjustable Reference
Check for Samples: LM614
FEATURES
1
Op Amp
23
•
•
•
•
•
•
•
•
Low Operating Current: 450μA
Wide Supply Voltage Range: 4V to 36V
Wide Common-Mode Range: V − to (V+− 1.8V)
Wide Differential Input Voltage: ±36V
Reference
Adjustable Output Voltage: 1.2V to 5.0V
Initial Tolerance: ±2.0%
Wide Operating Current Range: 17μA to
20mA
Tolerant of Load Capacitance
APPLICATIONS
•
•
•
•
Transducer Bridge Driver and Signal
Processing
Process and Mass Flow Control Systems
Power Supply Voltage Monitor
Buffered Voltage References for A/D's
DESCRIPTION
The LM614 consists of four op-amps and a
programmable voltage reference in a 16-pin package.
The op-amp out-performs most single-supply opamps by providing higher speed and bandwidth along
with low supply current. This device was specifically
designed to lower cost and board space requirements
in transducer, test, measurement and data acquisition
systems.
Combining a stable voltage reference with four wide
output swing op-amps makes the LM614 ideal for
single supply transducers, signal conditioning and
bridge driving where large common-mode-signals are
common. The voltage reference consists of a reliable
band-gap design that maintains low dynamic output
impedance (1Ω typical), initial tolerance (2.0%), and
the ability to be programmed from 1.2V to 5.0V via
two external resistors. The voltage reference is very
stable even when driving large capacitive loads, as
are commonly encountered in CMOS data acquisition
systems.
As a member of TI's new Super-Block™ family, the
LM614 is a space-saving monolithic alternative to a
multichip solution, offering a high level of integration
without sacrificing performance.
Connection Diagram
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Super-Block is a trademark of dcl_owner.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1998–2013, Texas Instruments Incorporated
LM614
SNOSC21C – MAY 1998 – REVISED MARCH 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1) (2)
36V (Max) (3)
−0.3V (Min) (4)
Voltage on Any Pins except VR
(referred to V− pin)
Current through Any Input Pin & VR Pin
Differential Input Voltage
±20
LM614I
±36V
LM614C
±32V
−65°C ≤ TJ ≤ +150°C
Storage Temperature Range
Maximum Junction Temperature
150°C
Thermal Resistance, Junction-to-Ambient (5)
150°C
Soldering Information (Soldering, 10 sec.)
220°C
ESD Tolerance (6)
(1)
(2)
(3)
(4)
(5)
(6)
±1kV
Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply
when operating the device beyond its rated operating conditions.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
Input voltage above V+ is allowed.
More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a
diode drop below V−, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below
the Maximum Rating. Operation is undefined and unpredictable when any parasitic diode or transistor is conducting.
Junction temperature may be calculated using TJ = TA + P DθjA. The given thermal resistance is worst-case for packages in sockets in
still air. For packages soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal θjA is
90°C/W for the DW package.
Human body model, 100 pF discharged through a 1.5 kΩ resistor.
Operating Temperature Range
−40°C ≤ TJ ≤ +85°C
LM614I
0°C ≤ TJ ≤ +70°C
LM614C
Electrical Characteristics
These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100μA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for TJ = 25°C; limits in Boldface type apply over the Operating
Temperature Range.
Symbol
Parameter
IS
Total Supply Current
VS
Supply Voltage Range
Conditions
RLOAD = ∞,
4V ≤ V+ ≤ 36V (32V for LM614C)
Typ (1)
LM614I
LM614C
Limits (2)
Units
450
550
1000
1070
μA max
μA max
2.2
2.9
2.8
3
V min
V min
46
43
32
32
V max
V max
OPERATIONAL AMPLIFIER
VOS1
VOS Over Supply
4V ≤ V+ ≤ 36V
(4V ≤ V+ ≤ 32V for LM614C)
1.5
2.0
5.0
7.0
mV max
mV max
VOS2
VOS Over VCM
V CM = 0V through VCM =
(V + − 1.8V), V+ = 30V
1.0
1.5
5.0
7.0
mV max
mV max
VOS3
ΔT
Average VOS Drift
See
IB
Input Bias Current
10
11
35
40
nA max
nA max
IOS
Input Offset Current
0.2
0.3
4
5
nA max
nA max
(1)
(2)
2
(2)
μV/°C
max
15
Typical values in standard typeface are for TJ = 25°C; values in boldface type apply for the full operating temperature range. These
values represent the most likely parametric norm.
All limits are ensured at room temperature (standard type face) or at operating temperature extremes (bold type face).
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Electrical Characteristics (continued)
These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100μA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for TJ = 25°C; limits in Boldface type apply over the Operating
Temperature Range.
Symbol
Parameter
IOS1
ΔT
Average Offset
Drift Current
RIN
Input Resistance
Conditions
Typ (1)
LM614I
LM614C
Limits (2)
Units
4
pA/°C
Differential
1800
MΩ
Common-Mode
3800
MΩ
CIN
Input Capacitance
Common-Mode Input
5.7
pF
en
Voltage Noise
f = 100 Hz, Input Referred
74
nV/√Hz
In
Current Noise
f = 100 Hz, Input Referred
58
fA/√Hz
CMRR
PSRR
+
+
= 30V, 0V ≤ VCM ≤ (V − 1.8V),
Common-Mode
V
95
75
dB min
Rejection Ratio
CMRR = 20 log (ΔVCM/ΔVOS)
90
70
dB min
Power Supply
4V ≤ V+ ≤ 30V, VCM = V+/2,
110
75
dB min
Rejection Ratio
PSRR = 20 log (ΔV+/ΔVOS)
100
70
dB min
500
50
94
40
V/mV
min
±0.50
±0.45
V/μs
+
AV
Open Loop
Voltage Gain
R L = 10 kΩ to GND, V = 30V,
5V ≤ VOUT ≤ 25V
SR
Slew Rate
V + = 30V (3)
±0.70
±0.65
GBW
Gain Bandwidth
C L = 50 pF
0.8
0.52
VO1
Output Voltage
Swing High
R L = 10 kΩ to GND
V + = 36V (32V for LM614C)
V + − 1.4
V+ − 1.6
V + − 1.8
V+ − 1.9
V min
V min
VO2
Output Voltage
Swing Low
R L = 10 kΩ to V+
V + = 36V (32V for LM614C)
V − + 0.8
V− + 0.9
V − + 0.95
V− + 1.0
V max
V max
IOUT
Output Source
V OUT = 2.5V, V+IN = 0V,
V −IN = −0.3V
25
15
16
13
mA min
mA min
I SINK
Output Sink
Current
V OUT = 1.6V, V+IN = 0V,
V −IN = 0.3V
17
9
13
8
mA min
mA min
ISHORT
Short Circuit Current
V OUT = 0V, V+IN = 3V,
V −IN = 2V, Source
30
40
50
60
mA max
mA max
V OUT = 5V, V+IN = 2V,
V −IN = 3V, Sink
30
32
70
90
mA max
mA max
MHz
MHz
VOLTAGE REFERENCE
VR
Voltage Reference
See
(4)
1.244
1.2191
1.2689
(±2.0%)
V min
V max
ΔVR
ΔT
Average Temperature Drift
See
(5)
10
150
PPM/°C
max
ΔVR
ΔTJ
Hysteresis
See
(6)
V R Change
with Current
V R(100 μA) − VR(17 μA)
0.05
0.1
1
1.1
mV max
mV max
VR(10 mA) − VR(100 μA) (7)
1.5
2.0
5
5.5
mV max
mV max
ΔVR
ΔIR
(3)
(4)
(5)
(6)
(7)
μV/°C
3.2
Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V,
and the output voltage transition is sampled at 10V and @20V. For falling slew rate, the input voltage is driven from 25V to 5V, and the
output voltage transition is sampled at 20V and 10V.
VR is the Cathode-feedback voltage, nominally 1.244V.
Average reference drift is calculated from the measurement of the reference voltage at 25°C and at the temperature extremes. The drift,
in ppm/°C, is 106•ΔV R/(VR[25°C] •ΔTJ), where ΔV R is the lowest value subtracted from the highest, VR[25°C] is the value at 25°C, and ΔTJ
is the temperature range. This parameter is ensured by design and sample testing.
Hysteresis is the change in VR caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that
is minimize the hysteresis to the typical value, cycle its junction temperature in the following pattern, spiraling in toward 25°C: 25°C,
85°C, −40°C, 70°C, 0°C, 25°C.
Low contact resistance is required for accurate measurement.
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Electrical Characteristics (continued)
These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100μA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for TJ = 25°C; limits in Boldface type apply over the Operating
Temperature Range.
Symbol
R
Parameter
Resistance
Conditions
ΔV R(10→0.1 mA)/9.9 mA
ΔV R(100→17 μA)/83 μA
ΔVR
AVRO
ΔVR
ΔV+
Typ (1)
LM614I
LM614C
Limits (2)
Units
0.2
0.6
0.56
13
Ω max
Ω max
V R Change
with High VRO
V R(Vro = Vr) − VR(Vro = 5.0V)
(3.76V between Anode and FEEDBACK)
2.5
2.8
7
10
mV max
mV max
V R Change with
V+ Change
V R(V + = 5V) − VR(V + = 36V)
(V+ = 32V for LM614C)
0.1
0.1
1.2
1.3
mV max
mV max
VR(V + = 5V) − VR(V + = 3V)
0.01
0.01
1
1.5
mV max
mV max
50
55
nA max
nA max
IFB
FEEDBACK Bias Current
V ANODE ≤ VFB ≤ 5.06V
22
29
en
Voltage Noise
BW = 10 Hz to 10 kHz, VRO = VR
30
4
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μV RMS
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Typical Performance Characteristics (Reference)
TJ = 25°C, FEEDBACK pin shorted to V− = 0V, unless otherwise noted
Reference Voltage vs Temperature
on 5 Representative Units
Reference Voltage Drift
Figure 1.
Figure 2.
Accelerated Reference Voltage Drift vs. Time
Reference Voltage vs. Current and Temperature
Figure 3.
Figure 4.
Reference Voltage vs. Current and Temperature
Reference Voltage vs. Reference Current
Figure 5.
Figure 6.
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Typical Performance Characteristics (Reference) (continued)
TJ = 25°C, FEEDBACK pin shorted to V− = 0V, unless otherwise noted
6
Reference Voltage vs. Reference Current
Reference AC Stability Range
Figure 7.
Figure 8.
FEEDBACK Current vs. FEEDBACK-to-Anode Voltage
FEEDBACK Current vs. FEEDBACK-to-Anode Voltage
Figure 9.
Figure 10.
Reference Noise Voltage vs. Frequency
Reference Small-Signal Resistance vs. Frequency
Figure 11.
Figure 12.
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Typical Performance Characteristics (Reference) (continued)
TJ = 25°C, FEEDBACK pin shorted to V− = 0V, unless otherwise noted
Reference Power-Up Time
Reference Voltage with FEEDBACK Voltage Step
Figure 13.
Figure 14.
Reference Voltage with 100∼
∼12 μA Current Step
Reference Step Response for 100 μA ∼ 10 mA Current Step
Figure 15.
Figure 16.
Reference Voltage Change with Supply Voltage Step
Figure 17.
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Typical Performance Characteristics (Op Amps)
+
−
V = 5V, V = GND = 0V, VCM = V+/2, VOUT = V+/2, TJ = 25°C, unless otherwise noted
8
Input Common-Mode Voltage Range vs. Temperature
VOS vs. Junction Temperature on 9 Representative Units
Figure 18.
Figure 19.
Input Bias Current vs. Common-Mode Voltage
Slew Rate vs. Temperature and Output Sink Current
Figure 20.
Figure 21.
Large-Signal Step Response
Output Voltage Swing vs. Temp. and Current
Figure 22.
Figure 23.
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Typical Performance Characteristics (Op Amps) (continued)
+
−
V = 5V, V = GND = 0V, VCM = V+/2, VOUT = V+/2, TJ = 25°C, unless otherwise noted
Output Source Current vs. Output Voltage and Temp.
Output Sink Current vs. Output Voltage and Temp.
Figure 24.
Figure 25.
Output Swing, Large Signal
Output Impedance vs. Frequency and Gain
Figure 26.
Figure 27.
Small-Signal Pulse Response vs. Temp.
Small-Signal Pulse Response vs. Load
Figure 28.
Figure 29.
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Typical Performance Characteristics (Op Amps) (continued)
+
−
V = 5V, V = GND = 0V, VCM = V+/2, VOUT = V+/2, TJ = 25°C, unless otherwise noted
10
Op Amp Voltage Noise vs. Frequency
Op Amp Current Noise vs. Frequency
Figure 30.
Figure 31.
Small-Signal Voltage Gain vs. Frequency and Temperature
Small-Signal Voltage Gain vs. Frequency and Load
Figure 32.
Figure 33.
Follower Small-Signal Frequency Response
Common-Mode Input Voltage Rejection Ratio
Figure 34.
Figure 35.
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Typical Performance Characteristics (Op Amps) (continued)
+
−
V = 5V, V = GND = 0V, VCM = V+/2, VOUT = V+/2, TJ = 25°C, unless otherwise noted
Power Supply Current vs. Power Supply Voltage
Positive Power Supply Voltage Rejection Ratio
Figure 36.
Figure 37.
Negative Power Supply Voltage Rejection Ratio
Input Offset Current vs. Junction Temperature
Figure 38.
Figure 39.
Input Bias Current vs. Junction Temperature
Figure 40.
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Typical Performance Distributions
12
Average VOS Drift Industrial Temperature Range
Average VOS Drift Commercial Temperature Range
Figure 41.
Figure 42.
Average IOS Drift Industrial Temperature Range
Average IOS Drift Commercial Temperature Range
Figure 43.
Figure 44.
Voltage Reference Broad-BandNoise Distribution
Op Amp Voltage Noise Distribution
Figure 45.
Figure 46.
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Typical Performance Distributions (continued)
Op Amp Current Noise Distribution
Figure 47.
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APPLICATION INFORMATION
VOLTAGE REFERENCE
Reference Biasing
The voltage reference is of a shunt regulator topology that models as a simple zener diode. With current Ir
flowing in the “forward” direction there is the familiar diode transfer function. Ir flowing in the reverse direction
forces the reference voltage to be developed from cathode to anode. The cathode may swing from a diode drop
below V− to the reference voltage or to the avalanche voltage of the parallel protection diode, nominally 7V. A
5.0V reference with V+ = 3V is allowed.
Figure 48. Voltages Associated with Reference
(Current Source Ir is External)
The reference equivalent circuit reveals how Vris held at the constant 1.2V by feedback, and how the
FEEDBACK pin passes little current.
To generate the required reverse current, typically a resistor is connected from a supply voltage higher than the
reference voltage. Varying that voltage, and so varying Ir, has small effect with the equivalent series resistance of
less than an ohm at the higher currents. Alternatively, an active current source, such as the LM134 series, may
generate Ir.
Figure 49. Reference Equivalent Circuit
Figure 50. 1.2V Reference
14
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Capacitors in parallel with the reference are allowed. See Reference AC Stability Range typical curve for
capacitance values—from 20 μA to 3 mA any capacitor value is stable. With the reference's wide stability range
with resistive and capacitive loads, a wide range of RC filter values will perform noise filtering.
Adjustable Reference
The FEEDBACK pin allows the reference output voltage, Vro, to vary from 1.24V to 5.0V. The reference attempts
to hold Vr at 1.24V. If Vr is above 1.24V, the reference will conduct current from Cathode to Anode; FEEDBACK
current always remains low. If FEEDBACK is connected to Anode, then Vro = Vr = 1.24V. For higher voltages
FEEDBACK is held at a constant voltage above Anode—say 3.76V for Vro = 5V. Connecting a resistor across the
constant Vr generates a current I=Vr/R1 flowing from Cathode into FEEDBACK node. A Thevenin equivalent
3.76V is generated from FEEDBACK to Anode with R2=3.76/I. For a 1% error, use R1 such that I is greater than
one hundred times the FEEDBACK bias current. For example, keep I ≥ 5.5μA.
Figure 51. Thevenin Equivalent
of Reference with 5V Output
R1 = Vr/I = 1.24/32μ = 39k
R2 = R1 {(Vro/Vr) − 1} = 39k {(5/1.24) − 1)} = 118k
Figure 52. Resistors R1 and R2 Program
Reference Output Voltage to be 5V
Understanding that Vr is fixed and that voltage sources, resistors, and capacitors may be tied to the FEEDBACK
pin, a range of Vr temperature coefficients may be synthesized.
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Figure 53. Output Voltage has Negative Temperature
Coefficient (TC) if R2 has Negative TC
Figure 54. Output Voltage has Positive TC
if R1 has Negative TC
Figure 55. Diode in Series with R1 Causes Voltage
across R1 and R2 to be Proportional to
Absolute Temperature (PTAT)
Connecting a resistor across Cathode-to-FEEDBACK creates a 0 TC current source, but a range of TCs may be
synthesized.
16
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I = Vr/R1 = 1.24/R1
Figure 56. Current Source is Programmed by R1
Figure 57. Proportional-to-Absolute-Temperature
Current Source
Figure 58. Negative-TC Current Source
Hysteresis
The reference voltage depends, slightly, on the thermal history of the die. Competitive micro-power products
vary—always check the data sheet for any given device. Do not assume that no specification means no
hysteresis.
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OPERATIONAL AMPLIFIERS
Any amp or the reference may be biased in any way with no effect on the other amps or reference, except when
a substrate diode conducts (see Electrical Characteristics). One amp input may be outside the common-mode
range, another amp may be operated as a comparator, another with all terminals floating with no effect on the
others (tying inverting input to output and non-inverting input to V− on unused amps is preferred). Choosing
operating points that cause oscillation, such as driving too large a capacitive load, is best avoided.
Op Amp Output Stage
These op amps, like their LM124 series, have flexible and relatively wide-swing output stages. There are simple
rules to optimize output swing, reduce cross-over distortion, and optimize capacitive drive capability:
1. Output Swing: Unloaded, the 42μA pull-down will bring the output within 300 mV of V− over the military
temperature range. If more than 42μA is required, a resistor from output to V− will help. Swing across any
load may be improved slightly if the load can be tied to V+, at the cost of poorer sinking open-loop voltage
gain
2. Cross-over Distortion: The LM614 has lower cross-over distortion (a 1 VBE deadband versus 3 VBE for the
LM124), and increased slew rate as shown in the characteristic curves. A resistor pull-up or pull-down will
force class-A operation with only the PNP or NPN output transistor conducting, eliminating cross-over
distortion
3. Capacitive Drive: Limited by the output pole caused by the output resistance driving capacitive loads, a pulldown resistor conducting 1 mA or more reduces the output stage NPN re until the output resistance is that of
the current limit 25Ω. 200pF may then be driven without oscillation.
Op Amp Input Stage
The lateral PNP input transistors, unlike most op amps, have BVEBO equal to the absolute maximum supply
voltage. Also, they have no diode clamps to the positive supply nor across the inputs. These features make the
inputs look like high impedances to input sources producing large differential and common-mode voltages.
Typical Applications
Figure 59. Simple Low Quiescent Drain Voltage Regulator.
Total supply current approximately 320μA, when VIN = +5V.
18
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*10k must be low
t.c. trimpot.
Figure 60. Ultra Low Noise 10.00V Reference.
Total output noise is typically 14μVRMS.
VOUT = (R1 /Pe + 1) V REF
R1, R2 should be 1% metal film
Pβ should be low T.C. trim pot
Figure 61. Slow Rise Time Upon Power-Up, Adjustable Transducer Bridge Driver.
Rise time is approximately 1ms.
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Set zero code voltage, then adjust 10Ω gain adjust pot for full scale.
Figure 62. Transducer Data Acquisition System.
20
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Simplified Schematic Diagrams
Figure 63. Op Amp
Figure 64. Reference / Bias
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REVISION HISTORY
Changes from Revision B (March 2013) to Revision C
•
22
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 21
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PACKAGE OPTION ADDENDUM
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1-Nov-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
LM614CWM/NOPB
Package Type Package Pins Package
Drawing
Qty
ACTIVE
SOIC
DW
16
45
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
0 to 70
LM614CWM
(4/5)
LM614IWM
NRND
SOIC
DW
16
45
TBD
Call TI
Call TI
0 to 70
LM614IWM
LM614IWM/NOPB
ACTIVE
SOIC
DW
16
45
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
0 to 70
LM614IWM
LM614IWMX/NOPB
ACTIVE
SOIC
DW
16
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
0 to 70
LM614IWM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2013
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
LM614IWMX/NOPB
Package Package Pins
Type Drawing
SOIC
DW
16
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
1000
330.0
16.4
Pack Materials-Page 1
10.9
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
10.7
3.2
12.0
16.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM614IWMX/NOPB
SOIC
DW
16
1000
367.0
367.0
38.0
Pack Materials-Page 2
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