SemiHow HTT1A80AS 3 quadrants 1a triac Datasheet

HTT1A80AS
VDRM = 1000 V
IT(RMS) = 1 A
ITSM = 11 A
IGT = 10mA
HTT1A80AS
3 Quadrants 1A TRIAC
Symbol
FEATURES
‰ Repetitive Peak Off-State Voltage : 1000V
‰ R.M.S On–State Current (IT(RMS) = 1A)
‰ Gate Trigger Current : 10mA
‰ dV/dt • 600V/us
SOT-223
General Description
2
Intended for use in AC static switching and industrial control
systems, driving low power highly inductive load like solenoid,
pump, fan ad micro-motor.
Absolute Maximum Ratings
Symbol
1.T1
3. G
(TJ=25୅ unless otherwise specified )
Parameter
VDRM
Repetitive Peak Off-State Voltage
VRRM
Repetitive Peak Reverse Voltage
VDSM
Non-Repetitive Surge Peak Off-State Voltage
VRSM
Non-Repetitive Peak Reverse Voltage
IT(RMS)
3
1
2. T2
Conditions
Sine wave, 50/60Hz,
Gate open
57oC
Ratings
Unit
1000
V
1000
V
1100
V
1100
V
1
A
R.M.S. On-State Current
Full sine wave, TC =
Non-Repetitive Surge Peak On-State Current
Full sine wave, 50Hz/60Hz
10/11
A
Fusing Current
t = 10ms
1.12
A2S
Forward Peak Gate Power
Dissipation
TJ = 125 πC
1
W
Forward Average Gate Power
Dissipation
TJ = 125 πC
1
W
IGM
Peak Gate Current
tp=20us, TJ = 125 πC
1
A
TJ
Operating Junction Temperature
-40~+125
oC
Storage Temperature
-40~+150
oC
ITSM
I2 t
PGM
PG(AV)
TSTG
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(TJ=25୅ unless otherwise specified )
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IDRM
Repetitive Peak Off-State Current
TJ=25oC
-
-
10
uA
TJ=125oC
-
-
500
uA
IRRM
Repetitive Peak Reverse Current
TJ=25oC
-
-
10
uA
-
-
500
uA
IGT
Gate Trigger Current
1+
-
-
6
mA
1-, 3-
-
-
10
mA
VGT
Gate Trigger Voltage
VD = 12V, RL=30Ÿ
1+, 1-, 3-
-
-
1.5
V
VGD
Non-Trigger Gate Voltage
VD = 2/3VDRM, RL=3.3KŸ,
TJ=125oC
0.2
-
-
V
IL
Latching Current
IG= 1.2IGT
1+, 3-
-
-
15
mA
1-
-
-
25
mA
IH
Holding Current
IT= 100mA
-
-
10
mA
VTM
Peak On-State Voltage
IT = 1.4A, tp = 380uS
-
-
1.5
V
dv/dt
Critical Rate of Rise of Off-State
Voltage
VD = 2/3 VDRM, Gate open,
TJ=125oC
600
-
-
V/us
Min
Typ
Max
Unit
40
oC/W
VD = VDRM
VR = VRRM
=125oC
TJ
VD = 12V, RL=30Ÿ
Thermal Characteristics
Symbol
RșJC
Parameter
Thermal Resistance
Conditions
Junction to Case
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HTT1A80AS
Electrical Characteristics
HTT1A80AS
Typical Characteristics
Fig 1. R.M.S. current vs. Power dissipation
Fig 2. R.M.S. current vs. Case temperature
Fig 3. Surge on state characteristics
Fig 4. Surge on state current rating
Fig 5. Gate trigger current vs.
junction temperature
Fig 6. Holding and latching current vs.
junction temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͻΒΟ͑ͣͥ͑͢͡
HTT1A80AS
Package Dimension
zv{TYYZG
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