128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3‡ Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb) • VCC, VCCQ, and VPEN voltages: 2.7V to 3.6V VCC operation 2.7V to 3.6V or 4.5V to 5.5V* VCCQ operation 2.7V to 3.6V, or 5V VPEN application programming • Interface Asynchronous Page Mode Reads: 150ns/25ns read access time (128Mb) 120ns/25ns read access time (64Mb) 110ns/25ns read access time (32Mb) • Enhanced data protection feature with VPEN = VSS Flexible sector locking Sector erase/program lockout during power transition • Security OTP block feature Permanent block locking (Contact factory for availability) • Industry-standard pinout • Inputs and outputs are fully TTL-compatible • Common Flash Interface (CFI) and Scalable Command Set • Automatic write and erase algorithm • 4.7µs-per-byte effective programming time using write buffer • 128-bit protection register 64-bit unique device identifier 64-bit user-programmable OTP cells • 100,000 ERASE cycles per block • Automatic suspend options: Block Erase Suspend-to-Read Block Erase Suspend-to-Program Program Suspend-to-Read 64-Ball FBGA NOTE: MT28F128J3, and MT28F320J3 are preliminary status.‡ MT28F640J3 is production status. OPTIONS • Timing 150ns (128Mb) 120ns (64Mb) 110ns (32Mb) • Operating Temperature Range Commercial Temperature (0ºC to +85ºC) Extended Temperature (-40ºC to +85ºC) 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 • VCCQ Option* 2.7V–3.6V 4.5V–5.5V • Packages 56-pin TSOP Type I 64-ball FBGA (1.0mm pitch) MARKING -15 -12 -11 None F RG FS Part Number Example: MT28F640J3RG-12 ET *Contact factory for availability of the MT28F320J3 and MT28F640J3. None ET 1 ©2002, Micron Technology, Inc. ‡PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically blockerasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F640J3 contains 67,108,864 bits organized as 8,388,608 bytes (8 bits) or 4,194,304 words (16 bits). This 64Mb device is organized as sixty-four 128KB erase blocks. Similarly, the MT28F320J3 contains 33,554,432 bits organized as 4,194,304 bytes (8 bits) or 2,097,152 words (16 bits). This 32Mb device is organized as thirty-two 128KB erase blocks. These three devices feature in-system block locking. They also have common flash interface (CFI) that permits software algorithms to be used for entire families of devices. The software is device-independent, JEDEC ID-independent with forward and backward compatibility. Additionally, the scalable command set (SCS) allows a single, simple software driver in all host systems to work with all SCS-compliant Flash memory devices. The SCS provides the fastest system/device data transfer rates and minimizes the device and system-level implementation costs. To optimize the processor-memory interface, the device accommodates VPEN, which is switchable during block erase, program, or lock bit configuration, or hardwired to VCC, depending on the application. VPEN is treated as an input pin to enable erasing, programming, and block locking. When VPEN is lower than the VCC lockout voltage (VLKO), all program functions are disabled. Block erase suspend mode enables the user to stop block erase to read data from or program data to any other blocks. Similarly, program suspend mode enables the user to suspend programming to read data or execute code from any unsuspended blocks. VPEN serves as an input with 2.7V, 3.3V, or 5V for application programming. VPEN in this Q-Flash family 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 can provide data protection when connected to ground. This pin also enables program or erase lockout during power transition. Micron’s even-sectored Q-Flash devices offer individual block locking that can lock and unlock a block using the sector lock bits command sequence. Status (STS) is a logic signal output that gives an additional indicator of the internal state machine (ISM) activity by providing a hardware signal of both status and status masking. This status indicator minimizes central processing unit (CPU) overhead and system power consumption. In the default mode, STS acts as an RY/BY# pin. When LOW, STS indicates that the ISM is performing a block erase, program, or lock bit configuration. When HIGH, STS indicates that the ISM is ready for a new command. Three chip enable (CE) pins are used for enabling and disabling the device by activating the device’s control logic, input buffer, decoders, and sense amplifiers. BYTE# enables selecting x8 or x16 READs/WRITEs to the device. BYTE# at logic LOW selects an 8-bit mode with address A0 selecting between the low byte and the high byte. BYTE# at logic HIGH enables 16-bit operation. RP# is used to reset the device. When the device is disabled and RP# is at VCC, the standby mode is enabled. A reset time ( t RWH) is required after RP# switches HIGH until outputs are valid. Likewise, the device has a wake time (tRS) from RP# HIGH until WRITEs to the command user interface (CUI) are recognized. When RP# is at GND, it provides write protection, resets the ISM, and clears the status register. A variant of the MT28F320J3 also supports the new security block lock feature for additional code security. This feature provides an OTP function for locking the top two blocks, the bottom two blocks, or the entire device. (Contact factory for availability.) 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY DEVICE MARKING Due to the size of the package, Micron’s standard part number is not printed on the top of each device. Instead, an abbreviated device mark comprised of a five-digit alphanumeric code is used. The abbreviated device marks are cross referenced to Micron part numbers in Table 1. Table 1 Cross Reference for Abbreviated Device Marks PART NUMBER MT28F320J3FS-11 MT28F320J3FS-11 ET MT28F640J3FS-12 MT28F640J3FS-12 ET MT28F128J3FS-15 MT28F128J3FS-15 ET PRODUCT MARKING ENGINEERING SAMPLE QUALIFIED SAMPLE FW201 FW207 FW202 FW209 FW203 FW501 FX201 FX207 FX202 FX209 FX203 FX501 FQ201 FQ207 FQ202 FQ209 FQ203 FQ501 PIN /BALL ASSIGNMENT (Top View) 64-Ball FBGA 56-Pin TSOP Type I A22 CE1 A21 A20 A19 A18 A17 A16 VCC A15 A14 A13 A12 CE0 VPEN RP# A11 A10 A9 A8 VSS A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 NC WE# OE# STS DQ15 DQ7 DQ14 DQ6 VSS DQ13 DQ5 DQ12 DQ4 VCCQ VSS DQ11 DQ3 DQ10 DQ2 VCC DQ9 DQ1 DQ8 DQ0 A0 BYTE# A23 CE2 1 2 3 4 5 6 7 8 A A1 A6 A8 VPEN A13 VCC A18 A22 B A2 VSS A9 CE0 A14 DNU A19 CE1 C A3 A7 A10 A12 A15 DNU A20 A21 D A4 A5 A11 RP# DNU DNU A16 A17 E DQ8 DQ1 DQ9 DQ3 DQ4 DNU DQ15 STS F BYTE# DQ0 DQ10 DQ11 DQ12 DNU DNU OE# G A23 A0 DQ2 VCCQ DQ5 DQ6 DQ14 WE# H CE2 DNU VCC VSS DQ13 VSS DQ7 NC Top View (Ball Down) NOTE: 1. A22 only exists on the 64Mb and 128Mb devices. On the 32Mb, this pin/ball is a no connect (NC). 2. A23 only exists on the 128Mb device. On the 32Mb and 64Mb, this pin/ball is a no connect (NC). 3. The # symbol indicates signal is active LOW. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY FUNCTIONAL BLOCK DIAGRAM (128Mb) Input Buffer I/O Control Logic Addr. A0–A23 X - Decoder/Block Erase Control Buffer/ Latch Power (Current) Control CE0 CE1 CE2 OE# WE# RP# VCC Addr. Counter 128KB Memory Block (0) 128KB Memory Block (1) 128KB Memory Block (2) Write Buffer DQ0–DQ15 128KB Memory Block (125) 128KB Memory Block (126) 128KB Memory Block (127) CE Logic Command Execution State Logic Machine YDecoder Sense Amplifiers Write/Erase-Bit Compare and Verify VPP Switch/ Pump STS VPEN Y - Select Gates Identification Register Status Register Query Output Buffer FUNCTIONAL BLOCK DIAGRAM (64Mb) Input Buffer I/O Control Logic Addr. A0–A22 X - Decoder/Block Erase Control Buffer/ Latch Power (Current) Control CE0 CE1 CE2 OE# WE# RP# VCC Addr. Counter VPEN Write Buffer DQ0–DQ15 128KB Memory Block (61) 128KB Memory Block (62) 128KB Memory Block (63) CE Logic STS 128KB Memory Block (0) 128KB Memory Block (1) 128KB Memory Block (2) Command Execution State Logic Machine YDecoder Y - Select Gates Sense Amplifiers Write/Erase-Bit Compare and Verify VPP Switch/ Pump Identification Register Status Register Query Output Buffer 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 4 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY FUNCTIONAL BLOCK DIAGRAM (32Mb) Input Buffer I/O Control Logic Addr. A0–A21 X - Decoder/Block Erase Control Buffer/ Latch Power (Current) Control CE0 CE1 CE2 OE# WE# RP# VCC Addr. Counter VPEN Write Buffer DQ0–DQ15 128KB Memory Block (29) 128KB Memory Block (30) 128KB Memory Block (31) CE Logic STS 128KB Memory Block (0) 128KB Memory Block (1) 128KB Memory Block (2) Command Execution State Logic Machine YDecoder Y - Select Gates Sense Amplifiers Write/Erase-Bit Compare and Verify VPP Switch/ Pump Identification Register Status Register Query Output Buffer 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 5 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY PIN/BALL DESCRIPTIONS 56-PIN TSOP NUMBERS 64-BALL FBGA NUMBERS SYMBOL TYPE WE# DESCRIPTION 55 G8 Input Write Enable: Determines if a given cycle is a WRITE cycle. If WE# is LOW, the cycle is either a WRITE to the command execution logic (CEL) or to the memory array. Addresses and data are latched on the rising edge of the WE# pulse. 14, 2, 29 B4, B8, H1 CE0, CE1, Input CE2 Chip Enable: Three CE pins enable the use of multiple Flash devices in the system without requiring additional logic. The device can be configured to use a single CE signal by tying CE1 and CE2 to ground and then using CE0 as CE. Device selection occurs with the first edge of CE0, CE1, or CE2 (CEx) that enables the device. Device deselection occurs with the first edge of CEx that disables the device (see Table 2). 16 D4 RP# Input Reset/Power-Down: When LOW, RP# clears the status register, sets the ISM to the array read mode, and places the device in deep power-down mode. All inputs, including CEx, are “Don’t Care,” and all outputs are High-Z. RP# must be held at VIH during all other modes of operation. 54 F8 OE# Input Output Enables: Enables data ouput buffers when LOW. When OE# is HIGH, the output buffers are disabled. 32, 28, 27, 26, 25, 24, 23, 22, 20, 19, 18, 17, 13, 12, 11, 10, 8, 7, 6, 5, 4, 3, 1, 30 G2, A1, B1, C1, D1, D2, A2, C2, A3, B3, C3, D3, C4, A5, B5, C5, D7, D8, A7, B7, C7, C8, A8, G1 A0–A21/ (A22) (A23) Input Address inputs during READ and WRITE operations. A0 is only used in x8 mode. A22 (pin 1, ball A8) is only available on the 64Mb and 128Mb devices. A23 (pin 30, ball G1) is only available on the 128Mb device. 31 F1 BYTE# Input BYTE# LOW places the device in the x8 mode. BYTE# HIGH places the device in the x16 mode and turns off the A0 input buffer. Address A1 becomes the lowest order address in x16 mode. 15 A4 VPEN Input Necessary voltage for erasing blocks, programming data, or configuring lock bits. Typically, VPEN is connected to VCC. When VPEN ≤ VPENLK, this pin enables hardware write protect. 33, 35, 38, 40, 44, 46, 49, 51, 34, 36, 39, 41, 45, 47, 50, 52 F2, E2, G3, E4, E5, G5, G6, H7, E1, E3, F3, F4, F5, H5, G7, E7 DQ0– DQ15 Input/ Data I/O: Data output pins during any READ operation Output or data input pins during a WRITE. DQ8–DQ15 are not used in byte mode. 53 E8 STS Output Status: Indicates the status of the ISM. When configured in level mode, default mode it acts as an RY/BY# pin. When configured in its pulse mode, it can pulse to indicate program and/or erase completion. Tie STS to VCCQ through a pull-up resistor. (continued on next page) 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 6 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY PIN/BALL DESCRIPTIONS (continued) 56-PIN TSOP NUMBERS 64-BALL FBGA NUMBERS SYMBOL TYPE DESCRIPTION 43 G4 VCCQ 9, 37 H3, A6 VCC Supply Power Supply: 2.7V to 3.6V. 21, 42, 48 B2, H4, H6 VSS Supply Ground. 56 H8 NC – No Connect: These may be driven or left unconnected. Pin 1 and ball A8 are NCs on the 32Mb device. Pin 30 and ball G1 are NCs on the 32Mb and 64Mb devices. – B6, C6, D5, D6, E6, F6, F7, H2 DNU – Do Not Use: Must float to minimize noise. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 Supply VCCQ controls the output voltages. To obtain output voltage compatible with system data bus voltages, connect VCCQ to the system supply voltage. 7 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MEMORY ARCHITECTURE Table 2 Chip Enable Truth Table The MT28F128J3, MT28F640J3, and MT28F320J3 memory array architecture is divided into one hundred twenty-eight, sixty-four, or thirty-two 128KB blocks, respectively (see Figure 1). The internal architecture allows greater flexibility when updating data because individual code portions can be updated independently of the rest of the code. Figure 1 Memory Map 128KB Block 7FFFFFh 7E0000h 128KB Block 127 63 7FFFFFh 7F0000h 64K-Word Block 3FFFFFh 3F0000h 64K-Word Block 03FFFFh 020000h 01FFFFh 000000h 31 128KB Block 1 128KB Block 0 A0–A23: 128Mb A0–A22: 64Mb A0–A21: 32Mb Byte-Wide (x8) Mode 1FFFFFh 1F0000h 01FFFFh 010000h 00FFFFh 000000h DEVICE VIL VIL VIL Enabled VIL VIL VIH Disabled VIL VIH VIL Disabled VIL VIH VIH Disabled VIH VIL VIL Enabled VIH VIL VIH Enabled VIH VIH VIL Enabled VIH VIH VIH Disabled 64K-Word Block 31 64K-Word Block 1 64K-Word Block 0 high-speed page buffer. A0–A2 select data in the page buffer. Asynchronous page mode, with a page size of four words or eight bytes, is supported with no additional commands required. 64Mb 128KB Block CE0 NOTE: For single-chip applications, CE2 and CE1 can be connected to GND. 63 32Mb 3FFFFFh 3E0000h CE1 127 128Mb FFFFFFh FE0000h CE2 OUTPUT DISABLE The device outputs are disabled with OE# at a logic HIGH level (VIH). Output pins DQ0–DQ15 are placed in High-Z. A1–A23: 128Mb A1–A22: 64Mb A1–A21: 32Mb Word-Wide (x16) Mode BUS OPERATION STANDBY All bus cycles to and from the Flash memory must conform to the standard microprocessor bus cycles. The local CPU reads and writes Flash memory insystem. CE0, CE1, and CE2 can disable the device (see Table 2) and place it in standby mode, which substantially reduces device power consumption. DQ0–DQ15 outputs are placed in High-Z, independent of OE#. If deselected during block erase, program, or lock bit configuration, the ISM continues functioning and consuming active power until the operation completes. READ Information can be read from any block, query, identifier codes, or status register, regardless of the VPEN voltage. The device automatically resets to read array mode upon initial device power-up or after exit from reset/power-down mode. To access other read mode commands (READ ARRAY, READ QUERY, READ IDENTIFIER CODES, or READ STATUS REGISTER), these commands should be issued to the CUI. Six control pins dictate the data flow in and out of the device: CE0, CE1, CE2, OE#, WE#, and RP#. In system designs using multiple Q-Flash devices, CE0, CE1, and CE2 (CEx) select the memory device (see Table 2). To drive data out of the device and onto the I/O bus, OE# must be active and WE# must be inactive (VIH). When reading information in read array mode, the device defaults to asynchronous page mode, thus providing a high data transfer rate for memory subsystems. In this state, data is internally read and stored in a 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 RESET/POWER-DOWN RP# puts the device into the reset/power-down mode when set to VIL. During read, RP# LOW deselects the memory, places output drivers in High-Z, and turns off internal circuitry. RP# must be held LOW for a minimum of tPLPH. tRWH is required after return from reset mode until initial memory access outputs are valid. After this wakeup interval, normal operation is restored. The command execution logic (CEL) is reset to the read array mode and the status register is set to 80h. During block erase, program, or lock bit configuration, RP# LOW aborts the operation. In default mode, STS transitions LOW and remains LOW for a maximum time of tPLPH + tPHRH, until the RESET operation is complete. Any memory content changes are no longer 8 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY valid; the data may be partially corrupted after a program or partially changed after an erase or lock bit configuration. After RP# goes to logic HIGH (VIH), and after tRS, another command can be written. It is important to assert RP# during system reset. After coming out of reset, the system expects to read from the Flash memory. During block erase, program, or lock bit configuration mode, automated Flash memories provide status information when accessed. When a CPU reset occurs with no Flash memory reset, proper initialization may not occur because the Flash memory may be providing status information instead of array data. Micron Flash memories allow proper initialization following a system reset through the use of the RP# input. RP# should be controlled by the same RESET# signal that resets the system CPU. Figure 2 Device Identifier Code Memory Map 7FFFFFh Block 127 Reserved for Future Implementation 7F0003h 7F0002h 7F0000h 7EFFFFh 3FFFFFh READ QUERY 3F0000h 3EFFFFh (Blocks 64 through 126) Reserved for Future Implementation Block 63 Lock Configuration Reserved for Future Implementation (Blocks 32 through 62) 1F0000h 1EFFFFh 01FFFFh Block 31 Lock Configuration Reserved for Future Implementation (Blocks 2 through 30) Reserved for Future Implementation 010003h 010002h Block 1 Lock Configuration 010000h 00FFFFh 000004h 000003h 000002h 000001h 000000h 32Mb Block 1 WRITE Writing commands to the CEL allows reading of device data, query, identifier codes, and reading and clearing of the status register. In addition, when VPEN = VPENH, block erasure, program, and lock bit configuration can also be performed. The BLOCK ERASE command requires suitable command data and an address within the block. The BYTE/ WORD PROGRAM command requires the command and address of the location to be written to. The CLEAR BLOCK LOCK BITS command requires the command and any address within the device. SET BLOCK LOCK BITS command requires the command and the block to be locked. The CEL does not occupy an addressable memory location. It is written to when the device is enabled and WE# is LOW. The address and data needed to execute a command are latched on the rising edge of WE# or the first edge of CEx that disables the device (see Table 2). Standard microprocessor write timings are used. 64Mb 1F0003h 1F0002h The READ IDENTIFIER CODES operation produces the manufacturer code, device code, and the block lock configuration codes for each block (see Figure 2). The block lock configuration codes identify locked and unlocked blocks. 128Mb Block 31 Reserved for Future Implementation READ IDENTIFIER CODES 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 Reserved for Future Implementation Block 63 3F0003h 3F0002h The READ QUERY operation produces block status information, CFI ID string, system interface information, device geometry information, and extended query information. Block 127 Lock Configuration Reserved for Future Implementation Block 0 Reserved for Future Implementation Block 0 Lock Configuration Device Code Manufacturer Code NOTE: When obtaining these identifier codes, A0 is not used in either x8 or x16 modes. Data is always given on the LOW byte in x16 mode (upper byte contains 00h). 9 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Table 3 Bus Operations MODE RP# Read Array VIH CE0, CE1, CE2 1 OE# 2 WE# 2 ADDRESS Enabled VIL VIH X STS DEFAULT MODE NOTES VPEN DQ3 X DOUT High-Z 4 Output Disable VIH Enabled VIH VIH X X High-Z X Standby VIH Disabled X X X X High-Z X Reset/Power-Down Mode VIL X X X X X High-Z High-Z 4 Read Identifier Codes VIH Enabled VIL VIH See Figure 2 X Note 8 High-Z 4 Read Query VIH Enabled VIL VIH See Table 7 X Note 9 High-Z 4 Read Status (ISM off) VIH Enabled VIL VIH X X DOUT Read Status (ISM on) DQ7 DQ15–DQ8 DQ6–DQ0 VIH Enabled VIL VIH X X Write VIH NOTE: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 5, 6, 7 DOUT High-Z High-Z Enabled VIH VIL X VPENH DIN X 7, 10, 11 See Table 2 for valid CE configurations. OE# and WE# should never be enabled simultaneously. DQ refers to DQ0–DQ7 if BYTE# is LOW and DQ0–DQ15 if BYTE# is HIGH. High-Z is VOH with an external pull-up resistor. Refer to DC Characteristics. When VPEN ≤ VPENLK, memory contents can be read, but not altered. X can be VIL or VIH for control and address pins, and VPENLK or VPENH for VPEN. See DC Characteristics for VPENLK and VPENH voltages. In default mode, STS is VOL when the ISM is executing internal block erase, program, or lock bit configuration algorithms. It is VOH when the ISM is not busy, in block erase suspend mode (with programming inactive), program suspend mode, or reset/power-down mode. See Read Identifier Codes section for read identifier code data. See Read Query Mode Command section for read query data. Command writes involving block erase, program, or lock bit configuration are reliably executed when VPEN = VPENH and VCC is within specification. Refer to Table 4 for valid DIN during a WRITE operation. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY COMMAND DEFINITIONS When the VPEN voltage is less than VPPLK, only READ operations from the status register, query, identifier codes, or blocks are enabled. Placing VPENH on VPEN enables BLOCK ERASE, PROGRAM, and LOCK BIT CON- FIGURATION operations. Device operations are selected by writing specific commands into the CEL, as seen in Table 4. Table 4 Micron Q-Flash Memory Command Set Definitions1 COMMAND SCALABLE BUS OR BASIC CYCLES COMMAND REQ’D SET2 FIRST BUS CYCLE OPER3 ADDR 4 DATA5, SECOND BUS CYCLE 6 OPER3 ADDR 4 DATA5, 6 NOTES* READ ARRAY SCS/BCS 1 WRITE X FFh READ IDENTIFIER CODES SCS/BCS 2 WRITE X 90h READ IA ID READ QUERY SCS 2 WRITE X 98h READ QA QD READ STATUS REGISTER SCS/BCS 2 WRITE X 70h READ X SRD 8 CLEAR STATUS REGISTER SCS/BCS 1 WRITE X 50h WRITE TO BUFFER SCS/BCS >2 WRITE BA E8h WRITE BA N 9, 10, 11 WORD/BYTE PROGRAM SCS/BCS 2 WRITE X 40h or 10h WRITE PA PD 12, 13 BLOCK ERASE SCS/BCS 2 WRITE BA 20h WRITE BA D0h 11, 12 BLOCK ERASE, PROGRAM SUSPEND SCS/BCS 1 WRITE X B0h 12, 14 BLOCK ERASE, PROGRAM RESUME SCS/BCS 1 WRITE X D0h 12 CONFIGURATION SCS 2 WRITE X B8h WRITE X CC SET BLOCK LOCK BITS SCS 2 WRITE X 60h WRITE BA 01h CLEAR BLOCK LOCK BITS SCS 2 WRITE X 60h WRITE X D0h 2 WRITE X C0h WRITE PA PD PROTECTION PROGRAM 7 15 *Notes appear on the next page. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 11 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY NOTE: 1. Commands other than those shown in Table 4 are reserved for future device implementations and should not be used. 2. The SCS is also referred to as the extended command set. 3. Bus operations are defined in Table 3. 4. X = Any valid address within the device BA = Address within the block IA = Identifier code address; see Figure 2 and Table 15 QA = Query data base address PA = Address of memory location to be programmed 5. ID = Data read from identifier codes QD = Data read from query data base SRD = Data read from status register; see Table 16 for a description of the status register bits PD = Data to be programmed at location PA; data is latched on the rising edge of WE# CC = Configuration code 6. The upper byte of the data bus (DQ8–DQ15) during command WRITEs is a “Don’t Care” in x16 operation. 7. Following the READ IDENTIFIER CODES command, READ operations access manufacturer, device, and block lock codes. See Block Status Register section for read identifier code data. 8. If the ISM is running, only DQ7 is valid; DQ15–DQ8 and DQ6–DQ0 float, which places them in High-Z. 9. After the WRITE-to-BUFFER command is issued, check the XSR to make sure a buffer is available for writing. 10. The number of bytes/words to be written to the write buffer = n + 1, where n = byte/word count argument. Count ranges on this device for byte mode are n = 00h to n = 1Fh and for word mode, n = 0000h to n = 000Fh. The third and consecutive bus cycles, as determined by n, are for writing data into the write buffer. The CONFIRM command (D0h) is expected after exactly n + 1 WRITE cycles; any other command at that point in the sequence aborts the WRITE-toBUFFER operation. Please see Figure 4, WRITE-to-BUFFER Flowchart, for additional information. 11. The WRITE-to-BUFFER or ERASE operation does not begin until a CONFIRM command (D0h) is issued. 12. Attempts to issue a block erase or program to a locked block while RP# = VIH will fail. 13. Either 40h or 10h is recognized by the ISM as the byte/word program setup. 14. Program suspend can be issued after either the WRITE-to-BUFFER or WORD/BYTE PROGRAM operation is initiated. 15. The CLEAR BLOCK LOCK BITS operation simultaneously clears all block lock bits. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 12 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY READ ARRAY COMMAND QUERY STRUCTURE OUTPUT The device defaults to read array mode upon initial device power-up and after exiting reset/power-down mode. The read configuration register defaults to asynchronous read page mode. Until another command is written, the READ ARRAY command also causes the device to enter read array mode. When the ISM has started a block erase, program, or lock bit configuration, the device does not recognize the READ ARRAY command until the ISM completes its operation, unless the ISM is suspended via an ERASE or PROGRAM SUSPEND command. The READ ARRAY command functions independently of the VPEN voltage. The query “data base” enables system software to obtain information about controlling the Flash component. The device’s CFI-compliant interface allows the host system to access query data. Query data are always located on the lowest-order data outputs (DQ0– DQ7) only. The numerical offset value is the address relative to the maximum bus width supported by the device. On this family of devices, the query table device starting address is a 10h, which is a word address for x16 devices. For a x16 organization, the first two bytes of the query structure, “Q” and “R” in ASCII, appear on the low byte at word addresses 10h and 11h. This CFIcompliant device outputs 00h data on upper bytes, thus making the device output ASCII “Q” on the LOW byte (DQ7–DQ0) and 00h on the HIGH byte (DQ15– DQ8). At query addresses containing two or more bytes of information, the least significant data byte is located at the lower address, and the most significant data byte is located at the higher address. This is summarized in Table 5. A more detailed example is provided in Table 6. READ QUERY MODE COMMAND This section is related to the definition of the data structure or “data base” returned by the CFI QUERY command. System software should retain this structure to gain critical information such as block size, density, x8/x16, and electrical specifications. When this information has been obtained, the software knows which command sets to use to enable Flash writes or block erases, and otherwise control the Flash component. Table 5 Summary of Query Structure Output as a Function of Device and Mode QUERY DATA WITH MAXIMUM DEVICE BUS WIDTH ADDRESSING QUERY DATA WITH BYTE ADDRESSING DEVICE QUERY START LOCATION IN TYPE/ MODE MAXIMUM DEVICE BUS WIDTH ADDRESSES HEX OFFSET HEX CODE ASCII VALUE HEX OFFSET HEX CODE ASCII VALUE 10h 10 11 12 0051 0052 0059 Q R Y 20 21 22 51 00 52 Q Null R 20 21 22 51 51 52 Q Q R x16 device x16 mode x16 device x8 mode N/A1 N/A1 NOTE: 1. The system must drive the lowest-order addresses to access all the device’s array data when the device is configured in x8 mode. Therefore, word addressing where these lower addresses are not toggled by the system is “Not Applicable” for x8-configured devices. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 13 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY QUERY STRUCTURE OVERVIEW The QUERY command makes the Flash component display the CFI query structure or data base. The structure subsections and address locations are outlined in Table 7. Table 6 Example of Query Structure Output of a x16- and x8-Capable Device WORD ADDRESSING OFFSET HEX CODE A16–A1 BYTE ADDRESSING VALUE OFFSET DQ15–DQ0 HEX CODE A7–A0 VALUE DQ7–DQ0 0010h 0051 Q 20h 51 Q 0011h 0052 R 21h 51 Q 0012h 0059 Y 22h 52 R 0013h P_ID LO PrVendor 23h 52 R 0014h P_ID HI ID # 24h 59 Y 0015h P LO PrVendor 25h 59 Y 0016h P HI TblAdr 26h P_ID LO PrVendor 0017h A_ID LO AltVendor 27h P_ID LO PrVendor 0018h A_ID HI ID # 28h P_ID HI ID # ... ... ... ... ... ... Table 7 Query Structure1 OFFSET SUBSECTION NAME DESCRIPTION 00h Manufacturer compatibility code 01h Device code (BA+2)h 2 Block Status Register Block-specific information 04–0Fh Reserved Reserved for vendor-specific information 10h CFI Query Identification String Reserved for vendor-specific information 1Bh System Interface Information Command set ID and vendor data offset 27h Device Geometry Definition Flash device layout P3 Primary Extended Query Table Vendor-defined additional information specific to the primary vendor algorithm NOTE: 1. Refer to the Query Structure Output section and offset 28h for the detailed definition of offset address as a function of device bus width and mode. 2. BA = Block address beginning location (i.e., 020000h is block two’s beginning location when the block size is 64K-word). 3. Offset 15 defines “P,” which points to the Primary Extended Query Table. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 14 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY CFI QUERY IDENTIFICATION STRING The CFI query identification string verifies whether the component supports the CFI specification. Addi- tionally, it indicates the specification version and supported vendor-specified command set(s). Table 8 Block Status Register OFFSET LENGTH (BA+2)h 1 1 ADDRESS 1 VALUE Block Lock Status Register (BA+2)h 00 or 01 BSR0 Block Lock Status 0 = Unlocked 1 = Locked (BA+2)h (bit 0) 0 or 1 BSR1–7 Reserved for Future Use (BA+2)h (bit 2–7) 0 DESCRIPTION NOTE: 1. BA = The beginning location of a block address (i.e., 010000h is block one’s (64K-word) beginning location in word mode). Table 9 CFI Identification OFFSET LENGTH DESCRIPTION ADDRESS HEX CODE VALUE Q R Y 10h 3 Query-unique ASCII string “QRY” 10h 11h 12h 51 52 59 13h 2 Primary vendor command set and control interface ID code. 16-bit ID code for vendor-specified algorithms 13h 14h 01 00 15h 2 Extended query table primary algorithm address 15h 16h 31 00 17h 2 Alternate vendor command set and control interface ID code; 0000h means no second vendor-specified algorithm exists 17h 18h 00 00 19h 2 Secondary algorithm extended query table address; 0000h means none exists 19h 1Ah 00 00 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 15 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY SYSTEM INTERFACE INFORMATION Table 10 provides useful information about optimizing system interface software. Table 10 System Interface Information OFFSET LENGTH 1Bh 1 1Ch 1Dh 1Eh 1 1 1 DESCRIPTION ADDRESS HEX CODE VALUE VCC logic supply minimum program/erase voltage Bits 0–3 BCD 100mV Bits 4–7 BCD volts 1Bh 27 2.7V VCC logic supply maximum program/erase voltage Bits 0–3 BCD 100mV Bits 4–7 BCD volts 1Ch 36 3.6V 1Dh 00 0.0V 1Eh 00 0.0V 1Fh 07 128µs 20h 07 128µs VPP [programming] supply minimum program/erase voltage Bits 0–3 BCD 100mV Bits 4–7 Hex volts VPP [programming] supply maximum program/erase voltage Bits 0–3 BCD 100mV Bits 4–7 Hex volts 1Fh 1 “n” such that typical single word program timeout = 2n µs 20h 1 “n” such that typical max. buffer write timeout = 2n µs 2n 21h 1 “n” such that typical block erase timeout = 21h 0A 1s 22h 1 “n” such that typical full chip erase timeout = 2n ms 22h 00 N/A 23h 1 “n” such that maximum word program timeout = 2n times typical 23h 04 2ms 24h 1 “n” such that maximum buffer write timeout = 2n times typical 24h 04 2ms 25h 1 “n” such that maximum block erase timeout = 2n times typical 25h 04 16s 26h 1 “n” such that maximum chip erase timeout = 2n times typical 26h 00 N/A 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 16 ms Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY DEVICE GEOMETRY DEFINITION Tables 11a and 11b provide important details about the device geometry. Table 11a Device Geometry Definitions OFFSET LENGTH DESCRIPTION CODE (see table below) 27h 1 “n” such that device size = 2n in number of bytes 27h 28h 2 Flash device interface: x8 async, x16 async, x8/x16 async; 28:00 29:00, 28:01 29:00, 28:02 29:00 28h 29h 02 00 x8/x16 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2Ah 2Bh 05 00 32 2Ch 1 Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases in “bulk” 2. x specifies the number of device or partition regions with one or more contiguous same-size erase blocks 3. Symmetrically blocked partitions have one blocking region 4. Partition size = (total blocks) x (individual block size) 2Ch 01 1 2Dh 4 Erase Block Region 1 Information Bits 0–15 = y; y + 1 = number of identical-size erase blocks Bits 16–31 = z; region erase block(s) size are z x 256 bytes 2Dh 2Eh 2Fh 30h Table 11b Device Geometry Definition Codes ADDRESS 27h 28h 29h 2Ah 2Bh 2Ch 2Dh 2Eh 2Fh 30h 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 32Mb 16 02 00 05 00 01 1F 00 00 02 64Mb 17 02 00 05 00 01 3F 00 00 02 17 128Mb 18 02 00 05 00 01 7F 00 00 02 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY PRIMARY VENDOR-SPECIFIC EXTENDED QUERY TABLE Table 12 includes information about optional Flash features and commands and other similar information. Table 12 Primary Vendor-Specific Extended Query OFFSET 1 P = 31h DESCRIPTION (OPTIONAL FLASH FEATURES AND COMMANDS) ADDRESS HEX CODE VALUE (P+0)h (P+1)h (P+2)h Primary extended query table Unique ASCII string, PRI 31h 32h 33h 50 52 49 P R I (P+3)h Major version number, ASCII 34h 31 1 (P+4)h Minor version number, ASCII 35h 31 1 (P+5)h (P+6)h (P+7)h (P+8)h Optional feature and command support (1 = yes, 0 = no) bits 9–31 are reserved; undefined bits are “0.” If bit 31 is “1,” then another 31-bit field of optional features follows at the end of the bit 30 field. Bit 0 Chip erase supported = no = 0 Bit 1 Suspend erase supported = yes = 1 Bit 2 Suspend program supported = yes = 1 Bit 3 Legacy lock/unlock supported = yes = 11 Bit 4 Queued erase supported = no = 0 Bit 5 Instant Individual block locking supported = no = 0 Bit 6 Protection bits supported = yes = 1 Bit 7 Page mode read supported = yes = 1 Bit 8 Synchronous read supported = no = 0 36h 37h 38h 39h 0A 00 00 0 (P+9)h Supported functions after suspend: read array, status, query Other supported operations: Bits 1–7 Reserved; undefined bits are “0” Bit 0 Program supported after erase suspend = yes = 1 3Ah 01 (P+A)h (P+B)h Block status register mask Bits 2–15 Reserved; undefined bits are “0” Bit 0 Block lock bit status register active = yes = 1 Bit 1 Block lock down bit status active = no = 0 3Bh 3Ch 01 00 (P+C)h VCC logic supply highest-performance program/erase voltage Bits 0–3 BCD value in 100mV Bits 4–7 BCD value in volts 3Dh 33 3.3V VPP optimum program/erase supply voltage Bits 0–3 BCD value in 100mV Bits 4–7 Hex value in volts 3Eh 00 0.0V (P+D)h NOTE: 1. Future devices may not support the described “Legacy Lock/Unlock” function. On these devices, bit 3 would have a value of “0.” 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 18 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Table 13 Protection Register Information OFFSET 1 P = 31h DESCRIPTION (OPTIONAL FLASH FEATURES AND COMMANDS) ADDRESS HEX VALUE CODE (P+E)h Number of protection register fields in JEDEC ID space. “00h” indicates that 256 protection bytes are available. 3Fh 01 01 (P+F)h (P+10)h (P+11)h (P+12)h Protection Field 1: Protection Description This field describes user-available, one-time programmable (OTP) protection register bytes. Some are preprogrammed with deviceunique serial numbers; others are user-programmable. Bits 0–15 point to the protection register lock byte, the section’s first byte. The following bytes are factory-preprogrammed and userprogrammable. Bits 0–7 Lock/bytes JEDEC-plane physical low address Bits 8–15 Lock/bytes JEDEC-plane physical high address Bits 16–23 “n” such that 2n = factory preprogrammed bytes Bits 24–31 “n” such that 2n = user-programmable bytes 40h 00 00h ADDRESS HEX VALUE CODE 8 byte Table 14 Burst Read Information OFFSET 1 P = 31h DESCRIPTION (OPTIONAL FLASH FEATURES AND COMMANDS) (P+13)h Page Mode Read Capability Bits 0–7 = “n” such that 2n Hex value represents the number of read page bytes. See offset 28h for device word width to determine page mode data output width. 00h indicates no read page buffer. 44h 03 (P+14)h Number of synchronous mode read configuration fields that follow. 00h indicates no burst capability. 45h 00 (P+15)h Reserved for future use. 46h NOTE: 1. The variable “P” is a pointer which is defined at CFI offset 15h. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 19 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY READ IDENTIFIER CODES COMMAND Writing the READ IDENTIFIER CODES command initiates the IDENTIFIER CODE operation. Following the writing of the command, READ cycles from addresses shown in Figure 2 retrieve the manufacturer, device, and block lock configuration codes (see Table 15 for identifier code values). Page mode READs are not supported in this read mode. To terminate the operation, write another valid command. The READ IDENTIFIER CODES command functions independently of the VPEN voltage. This command is valid only when the ISM is off or the device is suspended. See Table 15 for read identifier codes. erasure, or lock bit configuration. After writing this command, all subsequent READ operations output data from the status register until another valid command is written. Page mode READs are not supported in this read mode. The status register contents are latched on the falling edge of OE# or the first edge of CEx that enables the device (see Table 2). To update the status register latch, OE# must toggle to VIH or the device must be disabled before further READs. The READ STATUS REGISTER command functions independently of the VPEN voltage. During a program, block erase, set block lock bits, or clear block lock bits command sequence, only SR7 is valid until the ISM completes or suspends the operation. Device I/O pins DQ0–DQ6 and DQ8– DQ15 are placed in High-Z. When the operation completes or suspends (check status register bit 7), all contents of the status register are valid during a READ. READ STATUS REGISTER COMMAND The status register may be read at any time by writing the READ STATUS REGISTER command to determine the successful completion of programming, block Table 15 Identifier Codes CODE ADDRESS 1 DATA Manufacturer Compatibility Code 00000h (00) 89 Device Code • 32Mb • 64Mb • 128Mb 00001h 00001h 00001h (00) 16 (00) 17 (00) 18 X0002h2 Block Lock Configuration • Block is Unlocked • Block is Locked • Reserved for Future Use DQ0 = 0 DQ0 = 1 DQ1–DQ7 NOTE: 1. A0 is not used in either x8 or x16 modes when obtaining the identifier codes. The lowest-order address line is A1. Data is always presented on the low byte in x16 mode (upper byte contains 00h). 2. X selects the specific block’s lock configuration code. See Figure 2 for the device identifier code memory map. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 20 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Table 16 Status Register Definitions ISMS ESS ECLBS PSLBS VPENS PSS DPS R 7 6 5 4 3 2 1 0 HIGH-Z WHEN BUSY? STATUS REGISTER BITS NOTES No SR7 = WRITE STATE MACHINE STATUS (ISMS) 1 = Ready 0 = Busy Check STS or SR7 to determine block erase, program, or lock bit configuration completion. SR6–SR0 are not driven while SR7 = 0. Yes SR6 = ERASE SUSPEND STATUS (ESS) 1 = Block Erase Suspended 0 = Block Erase in Progress/Completed Yes SR5 = ERASE AND CLEAR LOCK BITS STATUS (ECLBS) 1 = Error in Block Erasure or Clear Lock Bits 0 = Successful Block Erase or Clear Lock Bits Yes SR4 = PROGRAM AND SET LOCK BIT STATUS (PSLBS) 1 = Error in Programming or Setting Block Lock Bits 0 = Successful Program or Set Block Lock Bits Yes SR3 = PROGRAMMING VOLTAGE STATUS (VPENS) 1 = Low Programming Voltage Detected, Operation Aborted 0 = Programming Voltage OK Yes SR2 = PROGRAM SUSPEND STATUS (PSS) 1 = Program Suspended 0 = Program in Progress/Completed Yes SR1 = DEVICE PROTECT STATUS (DPS) 1 = Block Lock Bit Detected, Operation Aborted 0 = Unlock Yes SR0 = RESERVED FOR FUTURE ENHANCEMENTS 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 21 If both SR5 and SR4 are “1s” after a block erase or lock bit configuration attempt, an improper command sequence was entered. SR3 does not provide a continuous programming voltage level indication. The ISM interrogates and indicates the programming voltage level only after block erase, program, set block lock bits, or clear block lock bits command sequences. SR1 does not provide a continuous indication of block lock bit values. The ISM interrogates the block lock bits only after block erase, program, or lock bit configuration command sequences. It informs the system, depending on the attempted operation, if the block lock bit is set. Read the block lock configuration codes using the READ IDENTIFIER CODES command to determine block lock bit status. SR0 is reserved for future use and should be masked when polling the status register. Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Table 17 Extended Status Register Definitions (XSR) WBS RESERVED 7 6–0 HIGH-Z WHEN BUSY? STATUS REGISTER BITS NOTES No XSR7 = WRITE BUFFER STATUS (WBS) 1 = Write Buffer Available 0 = Write Buffer Not Available After a BUFFER WRITE command, XSR7 = 1 indicates that a write buffer is available. Yes XSR6–XSR0 = RESERVED FOR FUTURE ENHANCEMENTS SR6–SR0 are reserved for future use and should be masked when polling the status register. CLEAR STATUS REGISTER COMMAND results in status register bits SR4 and SR5 being set to “1.” Also, reliable block erasure can only occur when VCC is valid and VPEN = VPENH. Note that SR3 and SR5 are set to “1” if block erase is attempted while VPEN ≤ VPENLK. Successful block erase requires that the corresponding block lock bit be cleared. Similarly, SR1 and SR5 are set to “1” if block erase is attempted when the corresponding block lock bit is set. The ISM sets the status register bits SR5, SR4, SR3, and SR1 to “1s.” These bits, which indicate various failure conditions, can only be reset by the CLEAR STATUS REGISTER command. Allowing system software to reset these bits can perform several operations (such as cumulatively erasing or locking multiple blocks or writing several bytes in sequence). To determine if an error occurred during the sequence, the status register may be polled. To clear the status register, the CLEAR STATUS REGISTER command (50h) is written. The CLEAR STATUS REGISTER command functions independently of the applied VPEN voltage and is only valid when the ISM is off or the device is suspended. BLOCK ERASE SUSPEND COMMAND The BLOCK ERASE SUSPEND command allows block erase interruption in order to read or program data in another block of memory. Writing the BLOCK ERASE SUSPEND command immediately after starting the block erase process requests that the ISM suspend the block erase sequence at an appropriate point in the algorithm. When reading after the BLOCK ERASE SUSPEND command is written, the device outputs status register data. Polling status register bit SR7, followed by SR6, shows when the BLOCK ERASE operation has been suspended. In the default mode, STS also transitions to VOH. tLES defines the block erase suspend latency. At this point, a READ ARRAY command can be written to read data from blocks other than that which is suspended. During erase suspend to program data in other blocks, a program command sequence can also be issued. During a PROGRAM operation with block erase suspended, status register bit SR7 returns to “0” and STS output (in default mode) transitions to VOL. However, SR6 remains “1” to indicate block erase suspend status. Using the PROGRAM SUSPEND command, a PROGRAM operation can also be suspended. Resuming a suspended programming operation by issuing the PROGRAM RESUME command BLOCK ERASE COMMAND The BLOCK ERASE command is a two-cycle command that erases one block. First, a block erase setup is written, followed by a block erase confirm. This command sequence requires an appropriate address within the block to be erased. The ISM handles all block preconditioning, erase, and verify. Time tWB after the twocycle block erase sequence is written, the device automatically outputs status register data when read. The CPU can detect block erase completion by analyzing the output of the STS pin or status register bit SR7. Toggle OE# or CEx to update the status register. Upon block erase completion, status register bit SR5 should be checked to detect any block erase error. When an error is detected, the status register should be cleared before system software attempts corrective actions. The CEL remains in read status register mode until a new command is issued. This two-step setup command sequence ensures that block contents are not accidentally erased. An invalid block erase command sequence 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 22 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY enables the suspended programming operation to continue. To resume the suspended erase, the user must wait for the programming operation to complete before issuing the BLOCK ERASE RESUME command. While block erase is suspended, the only other valid commands are READ QUERY, READ STATUS REGISTER, CLEAR STATUS REGISTER, CONFIGURE, and BLOCK ERASE RESUME. After a BLOCK ERASE RESUME command to the Flash memory is completed, the ISM continues the block erase process. Status register bits SR6 and SR7 automatically clear and STS (in default mode) returns to VOL. After the ERASE RESUME command is completed, the device automatically outputs status register data when read. VPEN must remain at VPENH (the same VPEN level used for block erase) during block erase suspension. Block erase cannot resume during block erase suspend until PROGRAM operations are complete. If an error occurs during a WRITE, the device stops writing, and status register bit SR4 is set to a “1” to indicate a program failure. The ISM only detects errors for “1s” that do not successfully program to “0s.” When a program error is detected, the status register should be cleared. Note that the device does not accept any more WRITE-to-BUFFER commands any time SR4 and/ or SR5 is set. In addition, if the user attempts to program past an erase block boundary with a WRITE-toBUFFER command, the device aborts the WRITE-toBUFFER operation and generates an invalid command/ sequence error, and status register bits SR5 and SR4 are set to “1.” Reliable BUFFERED WRITEs can only occur when VPEN = VPENH. If a BUFFERED WRITE is attempted while VPEN ≤ VPENLK, status register bits SR4 and SR3 are set to “1.” Buffered write attempts with invalid VCC and VPEN voltages produce spurious results and should not be attempted. Finally, the corresponding block lock bit should be reset for successful programming. When a BUFFERED WRITE is attempted while the corresponding block lock bit is set, SR1 and SR4 are set to “1.” WRITE-TO-BUFFER COMMAND The write-to-buffer command sequence is initiated to program the Flash device via the write buffer. A buffer can be loaded with a variable number of bytes, up to the buffer size, before writing to the Flash device. First, the WRITE-to-BUFFER SETUP command is issued, along with the block address (see Figure 4). Then, the extended status register (XSR; see Table 17) information is loaded and XSR7 indicates “buffer available” status. If XSR7 = 0, the write buffer is not available. To retry, issue the WRITE-to-BUFFER SETUP command with the block address and continue monitoring XSR7 until XSR7 = 1. When XSR7 transitions to “1,” the buffer is ready for loading new data. Then the part is given a word/byte count with the block address. On the next write, a device start address is given, along with the write buffer data. Depending on the count, subsequent writes provide additional device addresses and data. All subsequent addresses must lie within the start address plus the count. The device internally programs many Flash cells in parallel. Due to this parallel programming, maximum programming performance and lower power are obtained by aligning the start address at the beginning of a write buffer boundary (i.e., A0–A4 of the start address = 0). When the final buffer data is given, a WRITE CONFIRM command is issued, thus programming the ISM to begin copying the buffer data to the Flash array. If the device receives a command other than WRITE CONFIRM, an invalid command/sequence error is generated and status register bits SR5 and SR4 are set to “1.” For additional BUFFER WRITEs, issue another WRITEto-BUFFER SETUP command and check XSR7. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 BYTE/WORD PROGRAM COMMANDS A two-cycle command sequence executes a byte/ word program setup. This program setup (standard 40h or alternate 10h) is written, followed by a second write that specifies the address and data (latched on the rising edge of WE#). Next, the ISM takes over to internally control the programming and program verify algorithms. When the program sequence is written, the device automatically outputs status register data when read (see Figure 5). The CPU can detect the completion of the program event by analyzing the STS pin or status register bit SR7. Upon program completion, status register bit SR4 should be checked. The status register should be cleared if a program error is detected. The ISM only detects errors for “1s” that do not successfully program to “0s.” The CEL remains in read status register mode until it receives another command. Reliable byte/word programs can only occur when VCC and VPEN are valid. Status register bits SR4 and SR3 are set to “1” if a byte/word program is attempted while VPEN ≤ VPENLK. The corresponding block lock bit should be cleared for successful byte/word programs. If BYTE/ WORD is attempted while the corresponding block lock bit is set, SR1 and SR4 are set to “1.” PROGRAM SUSPEND COMMAND The PROGRAM SUSPEND command enables program interruption to read data in other Flash memory locations. After starting the programming process, writ- 23 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY READ CONFIGURATION Micron’s Q-Flash devices support both asynchronous page mode and standard word/byte READs without configuration requirement. Status register and identifier only support standard word/byte single READ operations. ing the PROGRAM SUSPEND command requests that the ISM suspend the program sequence at a predetermined point in the algorithm. When the PROGRAM SUSPEND command is written, the device continues to output status register data when read. Polling status register bit SR7 can determine when the programming operation has been suspended. When SR7 = 1, SR2 is also set to “1” to indicate that the device is in the program suspend mode. STS in RY/BY# level mode also transitions to VOH. Note that tLPS defines the program suspend latency. Hence, a READ ARRAY command can be written to read data from unsuspended locations. While programming is suspended, the only other valid commands are READ QUERY, READ STATUS REGISTER, CLEAR STATUS REGISTER, CONFIGURE, and PROGRAM RESUME. When the PROGRAM RESUME command is written, the ISM continues the programming process. Status register bits SR2 and SR7 automatically clear and STS in RY/BY# mode returns to VOL. After the PROGRAM RESUME command is written, the device automatically outputs status register data when read. VPEN must remain at VPENH and VCC must remain at valid VCC levels (the same VPEN and VCC levels used for programming) while in program suspend mode. Refer to Figure 6 (PROGRAM SUSPEND/RESUME Flowchart). STS CONFIGURATION COMMAND Using the CONFIGURATION command, the STS pin can be configured to different states. Once configured, the STS pin remains in that configuration until another configuration command is issued, RP# is asserted LOW, or the device is powered down. Initially, the STS pin defaults to RY/BY# operation where RY/BY# goes LOW to indicate that the state machine is busy. When HIGH, RY/BY# indicates that either the state machine is ready for a new operation or it is suspended. Table 18, Configuration Coding Definitions, shows the possible STS configurations. To change the STS pin to other modes, the CONFIGURATION command is given, followed by the desired configuration code. The three alternate configurations are all pulse modes and may be used as a system interrupt. With these configurations, bit 0 controls erase complete interrupt pulse, and bit 1 controls program complete interrupt pulse. Providing the 00h configuration code with the CONFIGURATION command resets the STS pin to the default RY/BY# level mode. Table 18 describes possible configurations and usage. The CONFIGURATION command can only be given when the device is not busy or suspended. When configured in one of the pulse modes, the STS pin pulses LOW with a typical pulse width of 250ns. Check SR7 for device status. An invalid configuration code results in status register bits SR4 and SR5 being set to “1.” SET READ CONFIGURATION COMMAND Q-Flash memory does not support the SET READ CONFIGURATION command. The devices default to the asynchronous page mode. If this command is given, the operation of the device will not be affected. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 24 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Table 18 Configuration Coding Definitions1 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 RESERVED DQ1 DQ0 PULSE ON PULSE ON PROGRAM ERASE COMPLETE 2 COMPLETE 2 DQ1–DQ0 = STS Configuration Codes NOTES 00 = Default, RY/BY# level mode (device ready) indication Used to control HOLD to a memory controller to prevent accessing a Flash memory subsystem while any Flash device’s ISM is busy. 01 = Pulse on Erase Complete Used to generate a system interrupt pulse when any Flash device in an array has completed a BLOCK ERASE or sequence of queued BLOCK ERASEs; helpful for reformatting blocks after file system free space reclamation or “cleanup.” 10 = Pulse on Program Complete Used to generate a system interrupt pulse when any Flash device in an array has completed a PROGRAM operation. Provides highest performance for enabling continuous BUFFER WRITE operations. 11 = Pulse on Erase or Program Complete Used to generate system interrupts to trigger enabling of Flash arrays when either ERASE or PROGRAM operations are completed and a common interrupt service routine is desired. NOTE: 1. An invalid configuration code will result in both SR4 and SR5 being set. 2. When the device is configured in one of the pulse modes, the STS pin pulses LOW with a typical pulse width of 250ns. SET BLOCK LOCK BITS COMMAND valid. When VPEN ≤ VPENLK, lock bit contents are protected against any data change. A flexible block locking and unlocking scheme is enabled via a combination of block lock bits. The block lock bits gate PROGRAM and ERASE operations. Using the SET BLOCK LOCK BITS command, individual block lock bits can be set. This command is invalid when the ISM is running or when the device is suspended. SET BLOCK LOCK BITS commands are executed by a twocycle sequence. The set block lock bits setup, along with appropriate block address, is followed by the set block lock bits confirm and an address within the block to be locked. The ISM then controls the set lock bit algorithm. When the sequence is written, the device automatically outputs status register data when read (see Figure 9). The CPU can detect the completion of the set block lock bit event by analyzing the STS pin output or status register bit SR7. Upon completion of set block lock bits operation, status register bit SR4 should be checked for error. If an error is detected, the status register should be cleared. The CEL remains in read status register mode until a new command is issued. This two-step sequence of setup followed by execution ensures that lock bits are not accidentally set. An invalid SET BLOCK LOCK BITS command results in status register bits SR4 and SR5 being set to “1.” Also, reliable operation occurs only when VCC and VPEN are 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 CLEAR BLOCK LOCK BITS COMMAND The CLEAR BLOCK LOCK BITS command can clear all set block lock bits in parallel. This command is invalid when the ISM is running or the device is suspended. The CLEAR BLOCK LOCK BITS command is executed by a two-cycle sequence. First, a clear block lock bits setup is written, followed by a CLEAR BLOCK LOCK BITS CONFIRM command. Then the device automatically outputs status register data when read (see Figure 9). The CPU can detect completion of the clear block lock bits event by analyzing the STS pin output or the status register bit SR7. When the operation is completed, status register bit SR5 should be checked. If a clear block lock bits error is detected, the status register should be cleared. The CEL remains in read status register mode until another command is issued. This two-step setup sequence ensures that block lock bits are not accidentally cleared. An invalid clear block lock bits command sequence results in status register bits SR4 and SR5 being set to “1.” Also, a reliable CLEAR BLOCK LOCK BITS operation can only occur when VCC and VPEN are valid. If a CLEAR BLOCK 25 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY LOCK BITS operation is attempted when VPEN ≤ VPENLK, SR3 and SR5 are set to “1.” If a CLEAR BLOCK LOCK BITS operation is aborted due to VPEN or VCC transitioning out of valid range, block lock bit values are left in an undetermined state. To initialize block lock bit contents to known values, a repeat of CLEAR BLOCK LOCK BITS is required. protection register address space results in a status register error (program error bit SR4 is set to “1”). Attempting to program a locked protection register segment results in a status register error (program error bit SR4 and lock error bit SR1 are set to “1”). LOCKING THE PROTECTION REGISTER By programming bit 1 of the PR-LOCK location to “0,” the user-programmable segment of the protection register is lockable. To protect the unique device number, bit 0 of this location is programmed to “0” at the Micron factory. Bit 1 is set using the PROTECTION PROGRAM command to program “FFFDh” to the PR-LOCK location. When these bits have been programmed, no further changes can be made to the values stored in the protection register. PROTECTION PROGRAM commands to a locked section will result in a status register error (program error bit SR4 and lock error bit SR1 are set to “1”). Note that the protection register lockout state is not reversible. PROTECTION REGISTER PROGRAM COMMAND The 3V Q-Flash memory includes a 128-bit protection register to increase the security of a system design. For example, the number contained in the protection register can be used for the Flash component to communicate with other system components, such as the CPU or ASIC, to prevent device substitution. The 128 bits of the protection register are divided into two 64bit segments. One of the segments is programmed at the Micron factory with a unique and unchangeable 64-bit number. The other segment is left blank for customers to program as needed. After the customer segment is programmed, it can be locked to prevent reprogramming. Figure 3 Protection Register Memory Map READING THE PROTECTION REGISTER The protection register is read in the identification read mode. The device is switched to identification read mode by writing the READ IDENTIFIER command (90h). When in this mode, READ cycles from addresses shown in Table 19 or Table 20 retrieve the specified information. To return to read array mode, the READ ARRAY command (FFh) must be written. Word Address 88h 4 Words User-Programmed 85h 84h 4 Words Factory-Programmed PROGRAMMING THE PROTECTION REGISTER The protection register bits are programmed with two-cycle PROTECTION PROGRAM commands. The 64-bit number is programmed 16 bits at a time for word-wide parts and eight bits at a time for bytewide parts. First, the PROTECTION PROGRAM SETUP command, C0h, is written. The next write to the device latches in addresses and data, and programs the specified location. The allowable addresses are shown in Table 19 and Table 20. Any attempt to address PROTECTION PROGRAM commands outside the defined 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 81h 80h 1 Word Lock 0 NOTE: A0 is not used in x16 mode when accessing the protection register map (see Table 19 for x16 addressing). A0 is used for x8 mode (see Table 20 for x8 addressing). 26 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Table 19 Word-Wide Protection Register Addressing WORD LOCK 0 1 2 3 4 5 6 7 USE Both Factory Factory Factory Factory User User User User A8 1 1 1 1 1 1 1 1 1 A7 0 0 0 0 0 0 0 0 0 A6 0 0 0 0 0 0 0 0 0 A5 0 0 0 0 0 0 0 0 0 A4 0 0 0 0 0 0 0 0 1 A3 0 0 0 0 1 1 1 1 0 A2 0 0 1 1 0 0 1 1 0 A1 0 1 0 1 0 1 0 1 0 Table 20 Byte-Wide Protection Register Addressing BYTE LOCK 0 1 2 3 4 5 6 7 8 9 A B C D E F USE Both Factory Factory Factory Factory Factory Factory Factory Factory User User User User User User User User A8 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 A7 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 A6 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 A5 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 A4 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 A3 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 A2 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 A1 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 A0 0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 NOTE: 1. All address lines not specified in the above tables must be “0” when accessing the protection register (i.e., A22–A9 = 0). 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 27 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Figure 4 WRITE-to-BUFFER Flowchart BUS OPERATION COMMAND WRITE Start Set Timeout Issue WRITE-to-BUFFER Command E8h, Block Address XSR7 = Valid Addr = Block Address STANDBY Check XSR7 1 = Write Buffer Available 0 = Write Buffer Not Available WRITE1, 2 Data = N = Word/Byte Count N = 0 Corresponds to Count = 1 Addr = Block Address WRITE3, 4 Data = Write Buffer Data Addr = Device Start Address WRITE5, 6 Data = Write Buffer Data Addr = Device Address Read Extended Status Register XSR7 = WRITE-toBUFFER Timeout? 1 Write Word or Byte Count N, Block Address Write Buffer Data, Start Address WRITE X=0 Yes Check X = N? No Yes No Write to Buffer Aborted X=X+1 STANDBY Check SR7 1 = ISM Ready 0 = ISM Busy Full status check can be done after all erase and write sequences complete. Write FFh after the last operation to reset the device to read array mode. Program Buffer to Flash Confirm D0h Yes Status register data with the device enabled, OE# LOW updates SR Addr = Block Address Write to Another Block Address Write Next Buffer Data, Device Address Program Data = D0h Buffer to Addr = Block Address Flash Confirm READ7 Yes Abort Yes WRITE-to-BUFFER Command? Data = E8h Block Address READ No 0 WRITE-toBUFFER COMMENTS Another WRITE-to-BUFFER ? Issue READ STATUS Command No Read Status Register 1 SR7 = 0 1 Full Status Check if Desired Programming Complete NOTE: 1. Byte or word count values on DQ0–DQ7 are loaded into the count register. Count ranges on this device for byte mode are n = 00h to 1Fh and for word mode are n = 0000h to 000Fh. 2. The device now outputs the status register when read (XSR is no longer available). 3. Write buffer contents will be programmed at the device start address or destination Flash address. 4. Align the start address on a write buffer boundary for maximum programming performance (i.e., A4–A0 of the start address = 0). 5. The device aborts the WRITE-to-BUFFER command if the current address is outside of the original block address. 6. The status register indicates an “improper command sequence” if the WRITE-to-BUFFER command is aborted. Follow this with a CLEAR STATUS REGISTER command. 7. Toggling OE# (LOW to HIGH to LOW) updates the status register. This can be done in place of issuing the READ STATUS REGISTER command. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 28 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Figure 5 Byte/Word Program Flowchart BUS OPERATION COMMAND SETUP BYTE/ Data = 40h WORD Addr = Location to be PROGRAM Programmed WRITE BYTE/ WORD PROGRAM Start Write 40h, Address Write Data and Address Data = Data to be Programmed Addr = Location to be Programmed READ Status Register Data STANDBY Check SR7 1 = ISM Ready 0 = ISM Busy Read Status Register Toggling OE# (LOW to HIGH to LOW) updates the status register. This can be done in place of issuing the READ STATUS REGISTER command. Repeat for subsequent programming operations. 0 SR7 = 1 After each program operation or after a sequence of programming operations, an SR full status check can be done. Full Status Check if Desired Write FFh after the last program operation to place the device in read array mode. Byte/Word Program Complete FULL STATUS CHECK PROCEDURE BUS OPERATION COMMAND Read Status Register Data (see above) 1 SR3 = Check SR3 1 = Programming to Voltage Error Detect STANDBY Check SR1 1 = Device Protect Detect RP# = VIH, Block Lock Bit is Set Only required for systems implemeting lock bit configuration STANDBY Check SR4 1 = Programming Error Voltage Range Error 1 Device Protect Error SR1 = 0 1 Programming Error 0 COMMENTS STANDBY 0 SR4 = COMMENTS WRITE Toggling OE# (LOW to HIGH to LOW) updates the status register. This can be done in place of issuing the READ STATUS REGISTER command. Repeat for subsequent programming operations. Byte/Word Program Successful SR4, SR3, and SR1 are only cleared by the CLEAR STATUS REGISTER command in cases where multiple locations are programmed before full status is checked. If an error is detected, clear the status register before attempting retry or other error recovery. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 29 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Figure 6 PROGRAM SUSPEND/RESUME Flowchart BUS OPERATION COMMAND WRITE PROGRAM SUSPEND Start Write B0h Read Status Register Status Register Data Addr = X STANDBY Check SR7 1 = ISM Ready 0 = ISM Busy STANDBY Check SR6 1 = Programming Suspended 0 = Programming Completed 0 WRITE 0 SR2 = Programming Completed READ ARRAY READ WRITE Data = FFh Addr = X Read array locations other than that being programmed 1 Write FFh Data = B0h Addr = X READ SR7 = 1 COMMENTS PROGRAM RESUME Data = D0h Addr = X Read Data Array 1 No Done Reading Yes Write D0h Write FFh Programming Resumed Read Data Array 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 30 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Figure 7 BLOCK ERASE Flowchart BUS OPERATION COMMAND ERASE BLOCK WRITE ERASE Data = D0h CONFIRMED Addr = Block Address Start Issue Single BLOCK ERASE Command 20h, Block Address Suspend Erase Loop No Status register data with the device enabled; OE# LOW updates SR Addr = X STANDBY Check SR7 1 = ISM Ready 0 = ISM Busy The erase confirm byte must follow erase setup. This device does not support erase queuing. No SR7 = Data = 20h Addr = Block Address READ Write Confirm D0h Block Address Read Status Register COMMENTS WRITE Suspend Erase Yes Full status check can be done after all erase and write sequences complete. Write FFh after the last operation to reset the device to read array mode. 1 Full Status Check if Desired Erase Flash Block(s) Complete 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 31 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Figure 8 BLOCK ERASE SUSPEND/RESUME Flowchart BUS OPERATION COMMAND WRITE ERASE SUSPEND COMMENTS Data = B0h Addr = X READ Status Register Data Addr = X Write B0h STANDBY Read Status Register Check SR7 1 = ISM Ready 0 = ISM Busy STANDBY Check SR6 1 = Block Erase Suspended 0 = Block Erase Completed Start 0 SR7 = WRITE 1 0 ERASE RESUME Data = D0h Addr = X BLOCK ERASE Completed SR6 = 1 Read Read or Program? Read Array Data No Program Program Loop Done? Yes Write D0h Write FFh BLOCK ERASE Resumed Read Data Array 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 32 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Figure 9 SET BLOCK LOCK BITS Flowchart BUS OPERATION COMMAND COMMENTS WRITE SET BLOCK LOCK BITS SETUP Data = 60h Addr = Block Address Write 60h, Block Address WRITE SET BLOCK LOCK BITS CONFIRM Data = 01h Addr = Block Address Write 01h, Block Address READ Status Register Data STANDBY Check SR7 1 = ISM Ready 0 = ISM Busy Start Read Status Register Repeat for subsequent lock bit operations. 0 Full status check can be done after each lock bit set operation or after a sequence of lock bit set operations SR7 = 1 Write FFh after the last lock bit set operation to place device in read array mode. Full Status Check if Desired SET BLOCK LOCK BITs Complete FULL STATUS CHECK PROCEDURE BUS OPERATION COMMAND Read Status Register Data (see above) 1 SR3 = STANDBY Check SR3 1 = Programming Voltage Error Detect STANDBY Check SR4, SR5 Both 1 = Command Sequence Error STANDBY Check SR4 1 = Set Block Lock Bits Error Voltage Range Error 0 1 Command Sequence Error 1 SET BLOCK LOCK BITS Error SR4,5 = 0 SR4 = COMMENTS SR5, SR4, and SR3 are only cleared by the CLEAR STATUS REGISTER command in cases where multiple lock bits are set before full status is checked. 0 If an error is detected, clear the status register before attempting retry or other error recovery. SET BLOCK LOCK BITS Successful 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 33 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Figure 10 CLEAR BLOCK LOCK BITS Flowchart BUS OPERATION COMMAND CLEAR BLOCK LOCK BITS SETUP WRITE CLEAR BLOCK Data = D0h LOCK BITS Addr = X or CONFIRM Start Write 60h Write D0h Read Status Register COMMENTS WRITE Data = 60h Addr = X READ Status Register Data STANDBY Check SR7 1 = ISM Ready 0 = ISM Busy Write FFh after the CLEAR BLOCK LOCK BITS operation to place device in read array mode. 0 SR7 = 1 Full Status Check if Desired CLEAR BLOCK LOCK BITS Complete FULL STATUS CHECK PROCEDURE BUS OPERATION COMMAND Read Status Register Data (see above) 1 SR3 = STANDBY Check SR3 1 = Programming Voltage Error Detect STANDBY Check SR4, 5 Both 1 = Command Sequence Error STANDBY Check SR5 1 = Clear Block Lock Bits Error Voltage Range Error 0 1 SR4,5 = Command Sequence Error 0 1 SR5 = COMMENTS SR5, SR4, and SR3 are only cleared by the CLEAR STATUS REGISTER command. CLEAR BLOCK LOCK BITS Error If an error is detected, clear the status register before attempting retry or other error recovery. 0 CLEAR BLOCK LOCK BITS Successful 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 34 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Figure 11 PROTECTION REGISTER PROGRAMMING Flowchart BUS OPERATION COMMAND COMMENTS WRITE PROTECTION PROGRAM SETUP Data = C0h WRITE PROTECTION PROGRAM Data = Data to Program Addr = Location to Program Start Write C0h (Protection Register Program Setup) Write Protect Register Address/Data Read Status Register READ Status Register Data Toggle CE# or OE# to update status register data STANDBY Check SR7 1 = ISM Ready 0 = ISM Busy PROTECTION PROGRAM operations can only be addressed within the protection register address space. Addresses outside the defined space will return an error. No SR7 = 1 Repeat for subsequent programming operations. SR full status check can be done after each program or after a sequence of program operations. Yes Full Status Check if Desired Write FFh after the last program operation to reset device to read array mode. PROGRAM Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (see above) 1, 1 SR3, SR4 = 0, 1 SR1, SR4 = BUS OPERATION COMMAND COMMENTS SR1 SR3 SR4 STANDBY 0 1 1 VPEN LOW STANDBY 0 0 1 Protection Register Program Error STANDBY 1 0 1 Register Locked: Aborted VPEN Range Error PROTECTION REGISTER PROGRAMMING Error SR3, if set during a program attempt, MUST be cleared before further attempts are allowed by the ISM. 1, 1 SR1, SR4 = Attempted Program to Locked Register – Aborted SR1, SR3, and SR4 are only cleared by the CLEAR STAUS REGISTER command, in cases of multiple protection register program operations, before full status is checked. If an error is detected, clear the status register before attempting retry or other error recovery. PROGRAM Successful 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 35 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY DESIGN CONSIDERATIONS FIVE-LINE OUTPUT CONTROL Micron provides five control inputs (CE0, CE1, CE2, OE#, and RP#) to accommodate multiple memory connections in large memory arrays. This control provides the lowest possible memory power dissipation and ensures that data bus contention does not occur. To efficiently use these control inputs, an address decoder should enable the device (see Table 2) while OE# is connected to all memory devices and the system’s READ# control line. This ensures that only selected memory devices have active outputs while deselected memory devices are in standby mode. During system power transitions, RP# should be connected to the system POWERGOOD signal to prevent unintended writes. POWERGOOD should also toggle during system reset. mand for alternate configurations of the STS pin. STS can be connected to an interrupt input of the system CPU or controller. STS is active at all times. In default mode, it is also High-Z when the device is in block erase suspend (with programming inactive), program suspend, or reset/power-down mode. POWER SUPPLY DECOUPLING Device decoupling is required for Flash memory power switching characteristics. There are three supply current issues to consider: standby current levels, active current levels, and transient peaks produced by falling and rising edges of CEx and OE#. Transient current magnitudes depend on the device outputs’ capacitive and inductive loading. Two-line control and proper decoupling capacitor selection suppresses transient voltage peaks. Because Micron Q-Flash memory devices draw their power from three VCC pins (these devices do not include a VPP pin), it is recommended that systems without separate power and ground planes attach a 0.1µF ceramic capacitor between each of the device’s three VCC pins (this includes VCCQ) and GND. These high-frequency, low-inductance capacitors should be placed as close as possible to package leads on each Micron Q-Flash memory device. Additionally, for every eight devices, a 4.7µF electrolytic capacitor should be placed between VCC and GND at the array’s power supply connection. STS AND BLOCK ERASE, PROGRAM, AND LOCK BIT CONFIGURATION POLLING As an open drain output, STS should be connected to VCCQ by a pull-up resistor to provide a hardware method of detecting block erase, program, and lock bit configuration completion. It is recommended that a 2.5KΩ resistor be used between STS# and VCCQ. In default mode, it transitions LOW after block erase, program, or lock bit configuration commands and returns to High-Z when the ISM has finished executing the internal algorithm. See the CONFIGURATION com- 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 36 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY REDUCING OVERSHOOTS AND UNDERSHOOTS WHEN USING BUFFERS OR TRANSCEIVERS Overshoots and undershoots can sometimes cause input signals to exceed Flash memory specifications as faster, high-drive devices such as transceivers or buffers drive input signals to Flash memory devices. Many buffer/transceiver vendors now carry bus-interface devices with internal output-damping resistors or reduced-drive outputs. Internal output-damping resistors diminish the nominal output drive currents, while still leaving sufficient drive capability for most applications. These internal output-damping resistors help reduce unnecessary overshoots and undershoots by diminishing output-drive currents. When considering a buffer/transceiver interface design to Flash, devices with internal output-damping resistors or reduced-drive outputs should be used to minimize overshoots and undershoots. upon power-up, upon exiting reset/power-down mode, or after VCC transitions below VLKO. VCC must be kept at or above VPEN during VCC transitions. After block erase, program, or lock bit configuration, and after VPEN transitions to VPENLK, the CEL must be placed in read array mode via the READ ARRAY command if subsequent access to the memory array is desired. During VPEN transitions, VPEN must be kept at or below VCC. POWER-UP/DOWN PROTECTION During power transition, the device itself provides protection against accidental block erasure, programming, or lock bit configuration. Internal circuitry resets the CEL to read array mode at power-up. A system designer must watch out for spurious writes for VCC voltages above VLKO when VPEN is active. Because WE# must be LOW and the device enabled (see Table 2) for a command write, driving WE# to VIH or disabling the device inhibits WRITEs. The CEL’s two-step command sequence architecture provides added protection against data alteration. In-system block lock and unlock capability protects the device against inadvertent programming. The device is disabled when RP# = VIL regardless of its control inputs. Keeping VPEN below VPENLK prevents inadvertent data change. VCC, VPEN, RP# TRANSITIONS If VPEN or VCC falls outside of the specified operating ranges, or RP# is not set to VIH, block erase, program, and lock bit configuration are not guaranteed. If RP# transitions to VIL during block erase, program, or lock bit configuration, STS (in default mode) will remain LOW for a maximum time of tPLPH + tPHRH, until the RESET operation is complete and the device enters reset/power-down mode. The aborted operation may leave data partially corrupted after programming, or partially altered after an erase or lock bit configuration. Therefore, BLOCK ERASE and LOCK BIT CONFIGURATION commands must be repeated after normal operation is restored. Device power-off or RP# = VIL clears the status register. The CEL latches commands issued by system software and is not altered by VPEN or CEx transitions, or ISM actions. Its state is read array mode 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 POWER DISSIPATION Designers must consider battery power consumption not only during device operation, but also for data retention during system idle time. Flash memory’s nonvolatility increases usable battery life because data is retained when system power is removed. 37 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **All specified voltages are with respect to GND. Minimum DC voltage is –0.5V on input/output pins and -0.2V on VCC and VPEN pins. During transitions, this level may undershoot to –2.0V for periods <20ns. Maximum DC voltage on input/output pins, VCC, and VPEN is VCC +0.5V which, during transitions, may overshoot to VCC +2.0V for periods <20ns. †Output shorted for no more than one second. No more than one output shorted at a time. ABSOLUTE MAXIMUM RATINGS* Temperature Under Bias Expanded ................................... –40ºC to +85ºC Storage Temperature ........................... –65ºC to +125ºC For VCCQ = +2.7V to +3.6V Voltage On Any Pin ........................ –2.0V to +5.0V** For VCCQ = +4.5V to +5.5V All Pins Except VCC .......................... –2.0V to +7.0V** VCC ..................................................... –2.0V to +5.5V** Output Short Circuit Current ............................. 100mA † *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 38 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY TEMPERATURE AND RECOMMENDED DC OPERATING CONDITIONS Commercial Temperature (0ºC ≤ TA ≤ +85ºC), Extended Temperature (-40ºC ≤ TA ≤ +85ºC) PARAMETER SYMBOL MIN MAX UNITS VCC1 2.7 3.6 V VCCQ Supply Voltage (2.7V–3.6V) VCCQ1 2.7 3.6 V VCCQ Supply Voltage (4.5V–5.5V) VCCQ2 4.5 5.5 V VCC Supply Voltage (2.7V–3.6V) NOTES INPUT AND VPEN LOAD CURRENT VCC = VCC (MAX); VCCQ = VCCQ (MAX) VIN = VCCQ or GND ILI ±1 µA 1 OUTPUT LEAKAGE CURRENT VCC = VCC (MAX); VCCQ = VCCQ (MAX) VIN = VCCQ or GND ILO ±10 µA 1 INPUT LOW VOLTAGE VIL -0.5 0.8 V 2 INPUT HIGH VOLTAGE VIH 2 VCCQ + 0.5 V 2 OUTPUT LOW VOLTAGE (2.7V–3.6V) VCCQ = VCCQ1 (MIN) IOL = 2mA VOL 0.4 V 2, 3 0.2 V 0.45 V 4 0.25 V 4 0.85 × VCCQ V 2 VCCQ - 0.2 V 2.4 V VCCQ - 0.2 V VCCQ = VCCQ1 (MIN) IOL = 100µA OUTPUT LOW VOLTAGE (4.5V–5.5V) VCCQ = VCCQ2 (MIN) IOL = 2mA VOL OUTPUT LOW VOLTAGE (4.5V–5.5V) VCCQ = VCCQ2 (MIN) IOL = 100µA OUTPUT HIGH VOLTAGE (2.7V–3.6V) VCCQ = VCCQ (MIN) IOH = -2.5mA VOH VCCQ = VCCQ (MIN) IOH = -100µA OUTPUT HIGH VOLTAGE (4.5V–5.5V) VCCQ = VCCQ2 (MIN) IOH = -2.5mA VOH VCCQ = VCCQ2 (MIN) IOH = -100µA NOTE: 1. 2. 3. 4. 4 All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and speeds). Sampled, not 100% tested. Includes STS. MT28F320J3RG-11 F and MT28F640J3RG-12 F only. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 39 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY CAPACITANCE (TA = +25ºC; f = 1 MHz) PARAMETER/CONDITION SYMBOL TYP MAX UNITS C 5 8 pF BYTE# COUT 10 12 pF All other Pins COUT 5 12 pF Input Capacitance Output Capacitance RECOMMENDED DC ELECTRICAL CHARACTERISTICS Commercial Temperature (0ºC ≤ TA ≤ +85ºC), Extended Temperature (-40ºC ≤ TA ≤ +85ºC) DESCRIPTION VCC Standby Current CONDITIONS SYMBOL TYP MAX CMOS Inputs; VCC = VCC (MAX); Device is enabled; RP# = VCCQ ±0.2V ICC1 50 120 µA 0.71 2 mA TTL inputs; VCC = VCC (MAX); Device is enabled; RP# = VIH VCC Power-Down Current VCC Page Mode Read Current RP# = GND ±0.2V; IOUT (STS) = 0mA ICC2 50 120 µA CMOS inputs; VCC = VCC (MAX); VCCQ = VCCQ (MAX) using standard 4-word page mode READs; Device is enabled; f = 5 MHz; IOUT = 0mA ICC3 11 20 mA 15 29 mA 12.5 50 mA CMOS inputs; VCC = VCC (MAX); VCCQ = VCCQ (MAX) using standard 4-word page mode READs; Device is enabled; f = 33 MHz; IOUT = 0mA VCC Asynchronous Mode Read Current UNITS NOTES CMOS inputs; VCC = VCC (MAX); VCCQ = VCCQ (MAX) using standard word/byte single READs; Device is enabled; f = 5 MHz; IOUT = 0mA ICC4 1, 2, 3 1, 3 1, 3 NOTE: 1. 2. 3. 4. 5. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and speeds). Includes STS. CMOS inputs are either VCC ±0.2V or VSS ±0.2V. TTL inputs are either VIL or VIH. Sampled, not 100% tested. ICCWS and ICCES are specified with the device deselected. If the device is read or written while in erase suspend mode, the device’s current draw is ICCR or ICCW. 6. Block erase, programming, and lock bit configurations are inhibited when VPEN ≤ VPENLK, and they are not guaranteed in the range between VPENLK (MAX) and VPENH (MIN), or above VPENH (MAX). 7. Typically, VPEN is connected to VCC. 8. Block erase, programming, and lock bit configurations are inhibited when VCC < VLKO, and they are not guaranteed in the range between VLKO (MIN) and VCC (MIN), or above VCC (MAX). (continued on next page) 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 40 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY RECOMMENDED DC ELECTRICAL CHARACTERISTICS (continued) Commercial Temperature (0ºC ≤ TA ≤ +85ºC), Extended Temperature (-40ºC ≤ TA ≤ +85ºC) DESCRIPTION CONDITIONS SYMBOL TYP MAX VCC Program or Set Lock Bits Current CMOS inputs, VPEN = VCC ICC5 22 60 mA 24 70 mA VCC Block Erase or Clear Block Lock Bits Current CMOS inputs, VPEN = VCC 20 70 mA 22 80 mA VCC Program Suspend or Block Erase Suspend Current Device is disabled ICC7 10 mA 1 VPEN Lockout during Program, Erase, and Lock Bit Operations VPENLK 1 V 5, 6, 7 VPEN during Block Erase, Program, or Lock Bit Operations VPENH 2.7 3.6 V 6, 7 VCC Lockout Voltage VLKO 2.2 V 8 TTL inputs, VPEN = VCC ICC6 TTL inputs, VPEN = VCC UNITS NOTES 1, 4 1, 4 NOTE: 1. 2. 3. 4. 5. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and speeds). Includes STS. CMOS inputs are either VCC ±0.2V or VSS ±0.2V. TTL inputs are either VIL or VIH. Sampled, not 100% tested. ICCWS and ICCES are specified with the device deselected. If the device is read or written while in erase suspend mode, the device’s current draw is ICCR or ICCW. 6. Block erase, programming, and lock bit configurations are inhibited when VPEN ≤ VPENLK, and they are not guaranteed in the range between VPENLK (MAX) and VPENH (MIN), or above VPENH (MAX). 7. Typically, VPEN is connected to VCC. 8. Block erase, programming, and lock bit configurations are inhibited when VCC < VLKO, and they are not guaranteed in the range between VLKO (MIN) and VCC (MIN), or above VCC (MAX). 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 41 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Figure 12 Transient Input/Output Reference Waveform for VCCQ = 2.7V–3.6V, or VCCQ = 4.5V–5.5V VCCQ Input VCCQ/2 Test Points VCCQ/2 Output 0.0 NOTE: AC test inputs are driven at VCCQ for a logic 1 and 0.0V for a logic 0. Input timing begins, and output timing ends, at VCCQ/ 2V (50% of VCCQ). Input rise and fall times (10% to 90%) < 5ns. Figure 13 Transient Equivalent Testing Load Circuit 1.3V 1N914 RL = 3.3KΩ Device Under Test Out CL NOTE: C L includes jig capacitance Test Configuration Capacitance Loading Value Test Configuration 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 CL (pF) VCCQ = VCC = 2.7V to 3.6V 30 VCCQ = 4.5V to 5.5V 30 42 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY AC CHARACTERISTICS – READ-ONLY OPERATIONS (Notes: 1, 2, 4); Commercial Temperature (0ºC ≤ TA ≤ +85ºC), Extended Temperature (-40ºC ≤ TA ≤ +85ºC) VCC = 2.7V–3.6V VCCQ = 2.7V–3.6V or 4.5V–5.5V PARAMETER READ/WRITE Cycle Time SYMBOL tRC Address to Output Delay tAA CEx to Output Delay tACE OE# to Non-Array Output Delay OE# to Array Output Delay RP# HIGH to Output Delay tAOA tAOE tRWH tOEC CEx to Output in Low-Z OE# to Output in Low-Z CEx HIGH to Output in High-Z OE# HIGH to Output in High-Z Output Hold from Address, CEx, or OE# Change, Whichever Occurs First tOEO tODC tODO tOH tCB CEx LOW to BYTE# HIGH or LOW BYTE# to Output Delay BYTE# to Output in High-Z CEx HIGH to CEx LOW Page Address Access Time tABY tODB tCWH tAPA DENSITY 32Mb 64Mb 128Mb 32Mb 64Mb 128Mb 32Mb 64Mb 128Mb ALL ALL 32Mb 64Mb 128Mb ALL ALL ALL ALL ALL ALL ALL ALL ALL ALL MIN 110 120 150 MAX 110 120 150 110 120 150 50 25 150 180 210 0 0 35 15 0 10 1,000 1,000 0 25 UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns NOTES ns ns ns ns ns 6 3, 5 5 6 6 6 6 6 6 6 6 NOTE: 1. CEx LOW is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEx HIGH is defined at the first edge of CE0, CE1, or CE2 that disables the device (see Table 2). 2. See AC Input/Output Reference Waveforms for the maximum allowable input slew rate. 3. OE# may be delayed up to tACE - tAOE after the first edge of CEx that enables the device (see Table 2) without impact on tACE . 4. See Figures 12 and 13, Transient Input/Output Reference Waveform for VCCQ = 2.7V–3.6V or VCCQ = 4.5V–5.5V, and Transient Equivalent Testing Load Circuit for testing characteristics. 5. When reading the Flash array, a faster tAOE applies. Nonarray READs refer to status register READs, QUERY READs, or DEVICE IDENTIFIER READs. 6. Sampled, not 100% tested. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 43 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY PAGE MODE AND STANDARD WORD/BYTE READ OPERATIONS VIH ADDRESSES (A22–A3) VIL tRC VIH ADDRESSES (A2–A0) VIL Disabled VIH CEx Enabled VALID ADDRESS VALID ADDRESS VALID ADDRESS VALID ADDRESS tCWH VIL tODC tAA VIH OE# VIL tODO tACE VIH WE# VIL tAOE/ tAOA tRWH tOH tAPA tOEC DQ0–DQ15 VOH VALID OUTPUT High-Z VOL VALID OUTPUT VALID OUTPUT VALID OUTPUT High-Z tOEO VIH VCC VIL VIH RP# VIL tCB tABY tODB VIH BYTE VIL UNDEFINED TIMING PARAMETERS VCC = 2.7V–3.6V VCCQ = 2.7V–3.6V or 4.5V–5.5V VCC = 2.7V–3.6V VCCQ = 2.7V–3.6V or 4.5V–5.5V SYMBOL tRC (32Mb) tRC (64Mb) tRC (128Mb) tAA MIN MAX 110 120 150 UNITS SYMBOL tRWH (64Mb) tRWH (128Mb) tOEC 0 0 (32Mb) tAA (64Mb) 110 120 ns ns tOEO tAA 150 110 120 ns ns ns tODO 150 50 ns ns tABY 25 150 ns ns tCWH (128Mb) tACE (32Mb) tACE (64Mb) tACE (128Mb) tAOE tAOA tRWH (32Mb) MIN ns ns ns tODC tOH UNITS 180 210 ns ns ns 35 15 tODB ns ns 10 ns ns ns 1,000 1,000 ns ns 25 ns ns 0 tCB tAPA MAX 0 NOTE: CEx LOW is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEx HIGH is defined as the first edge of CE0, CE1, or CE2 that disables the device. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 44 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY AC CHARACTERISTICS – WRITE OPERATIONS (Notes: 1, 2, 3); Commercial Temperature (0ºC ≤ TA ≤ +85ºC), Extended Temperature (-40ºC ≤ TA ≤ +85ºC) AC CHARACTERISTICS PARAMETER RP# High Recovery to WE# (CEx) Going LOW CEx (WE#) LOW to WE# (CEx) Going LOW Write Pulse Width Data Setup to WE# (CEx) Going HIGH Address Setup to WE# (CEx) Going HIGH CEx (WE#) Hold from WE# (CEx) HIGH Data Hold from WE# (CEx) HIGH Address Hold from WE# (CEx) HIGH Write Pulse Width HIGH VPEN Setup to WE# (CEx) Going HIGH Write Recovery Before Read WE# (CEx) HIGH to STS Going LOW VPEN Hold from Valid SRD, STS Going HIGH WE# (CEx) HIGH to Status Register Busy SYMBOL tRS tCS (tWS) tWP (tCP) tDS tAS tCH (tWH) tDH tAH tWPH (tCPH) tVPS tWR tSTS tVPH tWB -11/-12/-15 MIN MAX 1 0 70 50 55 0 0 0 30 0 35 200 0 200 UNITS µs ns ns ns ns ns ns ns ns ns ns ns ns ns NOTES 4 5 5 6 6 7 4 8 9 4, 9, 10 4 NOTE: 1. CEx LOW is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEx HIGH is defined as the first edge of CE0, CE1, or CE2 that disables the device. 2. Read timing characteristics during BLOCK ERASE, PROGRAM, and LOCK BIT CONFIGURATION operations are the same as during READ-only operations. Refer to AC Characteristics – Read-Only Operations. 3. A WRITE operation can be initiated and terminated with either CEX or WE#. 4. Sampled, not 100% tested. 5. Write pulse width (tWP) is defined from CEx or WE# going LOW (whichever goes LOW last) to CEx or WE# going HIGH (whichever goes HIGH first). 6. Refer to Table 4 for valid AIN and DIN for block erase, program, or lock bit configuration. 7. Write pulse width HIGH (t WPH) is defined from CEx or WE# going HIGH (whichever goes HIGH first) to CEx or WE# going LOW (whichever goes LOW first). 8. For array access, tAA is required in addition to tWR for any accesses after a WRITE. 9. STS timings are based on STS configured in its RY/BY# default mode. 10. VPEN should be held at VPENH until determination of block erase, program, or lock bit configuration success (SR1/3/4/5 = 0). 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 45 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY BLOCK ERASE, PROGRAM, AND LOCK BIT CONFIGURATION PERFORMANCE (Notes: 1, 2, 3); Commercial Temperature (0ºC ≤ TA ≤ +85ºC), Extended Temperature (-40ºC ≤ TA ≤ +85ºC) CHARACTERISTICS PARAMETER Write Buffer Byte Program Time (Time to Program 32 bytes/16 words) SYMBOL tWED1 Byte/Word Program Time (Using WORD/BYTE PROGRAM Command) Block Program Time (Using WRITE-to-BUFFER Command) Block Erase Time Set Lock Bits Time Clear Block Lock Bits Time Program Suspend Latency Time to Read Erase Suspend Latency Time to Read tWED2 tWED3 tWED4 tWED5 tWED6 tLPS tLES -11/-12/-15 TYP MAX8 150 654 14 0.6 0.75 64 0.5 25 26 630 1.7 5 75 0.7 30 35 UNITS µs NOTES 4, 5, 6, 7 µs sec sec µs sec µs µs 4 4 4 4 5 NOTE: 1. Typical values measured at TA = +25ºC and nominal voltages. Assumes corresponding lock bits are not set. Subject to change based on device characterization. 2. These performance numbers are valid for all speed versions. 3. Sampled, but not 100% tested. 4. Excludes system-level overhead. 5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary. 6. Effective per-byte program time is 4.7µs/byte (typical). 7. Effective per-word program time is 9.4µs/word (typical). 8. MAX values are measured at worst-case temperature and VCC corner after 100,000 cycles. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 46 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY WRITE OPERATIONS1 Note 2 Note 3 Note 4 AIN AIN Note 5 Note 6 Note 7 VIH Addresses VIL tAS tAH VIH Disabled VIL CEx (WE#) Enabled OE# VIH VIL tWPH tCS Disabled WE# (CEx) Enabled tWR tCH tRS VIH VIL tWP tDS VALID BUSY SRD tWB tDH DQ0–DQ15 VIH DIN VALID READY SRD DIN DIN VIL tSTS VOH STS VOL VIH RP# VIL tVPS tVPH VPENH VPENLK VPEN VIL UNDEFINED TIMING PARAMETERS -11/-12/-15 SYMBOL tRS tCS MIN 1 MAX -11/-12/-15 UNITS µs SYMBOL tAH 0 70 50 ns ns ns tWPH ns ns tSTS tCH 55 0 tDH 0 ns tWB tWP tDS tAS tVPS tWR tVPH MIN 0 MAX 30 0 35 UNITS ns ns ns ns 200 ns ns 200 ns 0 NOTE: 1. CEx LOW is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEx HIGH is defined at the first edge of CE0, CE1, or CE2 that disables the device (see Table 2). STS is shown in its default mode (RY/BY#). 2. VCC power-up and standby. 3. Write block erase, write buffer, or program setup. 4. Write block erase or write buffer confirm, or valid address and data. 5. Automated erase delay. 6. Read status register or query data. 7. WRITE READ ARRAY command. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 47 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY RESUME OPERATIONS1 Note 2 Note 3 (( )) (( )) VIH Addresses AIN VIL tAS (( )) VIH Disabled AIN tAH VIL CEx (WE#) Enabled tCH (( )) VIH OE# VIL tWEH tCS (( )) VIH Disabled WE# (CEx) VIL Enabled tWP tDS tDH VIH DQ0–DQ15 (( )) Command VIL Note 4 tSTS VOH STS RP# Command tSTS VOL (( )) VIH (( )) VIL (( )) VPENH VPENLK VPEN VIL UNDEFINED TIMING PARAMETERS -11/-12/-15 SYMBOL tCS tWP MIN 0 MAX -11/-12/-15 UNITS ns tAS 70 50 55 ns ns ns tCH 0 ns tDS SYMBOL tDH tAH MIN 0 0 tSTS tWEH MAX 200 200 UNITS ns ns ns ns NOTE: 1. CEx LOW is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEx HIGH is defined at the first edge of CE0, CE1, or CE2 that disables the device (see Table 2). STS is shown in its default mode (RY/BY#). 2. Erase resume, or program resume. 3. Read status, erase suspend or program suspend. 4. STS value will be: VIH after ERASE SUSPEND and PROGRAM SUSPEND commands VIL after READ STATUS command 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 48 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY RESET SPECIFICATIONS (Note: 1); Commercial Temperature (0ºC ≤ TA ≤ +85ºC), Extended Temperature (-40ºC ≤ TA ≤ +85ºC) CHARACTERISTICS PARAMETER RP# Pulse Low Time (If RP# is tied to VCC, this specification is not applicable) SYMBOL tPLPH tPHRH RP# HIGH to Reset during Block Erase, Program, or Lock Bit Configuration -11/-12/-15 MIN MAX 35 100 UNITS µs NOTES 2 ns 3 RESET OPERATION4 VIH STS VIL tPHRH RP# VIH VIL tPLPH NOTE: 1. STS is shown in its default mode (RY/BY#). 2. These specifications are valid for all product versions (packages and speeds). 3. If RP# is asserted while a BLOCK ERASE, PROGRAM, or LOCK BIT CONFIGURATION operation is not executing, then the minimum required RP# pulse LOW time is 100ns. 4. A reset time, tPHQV, is required from the latter of STS (in RY/BY# mode) or RP# going HIGH until outputs are valid. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 49 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY 56-PIN TSOP TYPE I 20.00 ±0.10 PLASTIC PACKAGE MATERIAL: EPOXY NOVOLAC 18.40 ±0.08 LEAD FINISH: TIN/LEAD PLATE PACKAGE WIDTH AND LENGTH DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.25 PER SIDE PIN #1 INDEX 0.50 TYP 14.00 ±0.08 0.25 +0.03 0.15 -0.02 0.25 0.10 GAGE PLANE SEE DETAIL A 1.20 MAX +0.10 0.10 -0.05 0.5 ±0.10 0.80 TYP DETAIL A NOTE: 1. All dimensions in millimeters. 2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 50 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY 64-BALL FBGA 0.850 ±0.075 SEATING PLANE C 0.08 C BALL A8 64X ∅0.45 SOLDER BALL DIAMETER REFERS TO POST REFLOW CONDITION. THE PREREFLOW DIAMETER IS Ø 0.40 7.00 1.20 MAX BALL A1 ID 1.00 TYP BALL A1 ID BALL A1 1.00 TYP 7.00 ±0.05 13.00 ±0.10 CL 3.50 ±0.05 6.50 ±0.05 CL 3.50 ±0.05 MOLD COMPOUND: EPOXY NOVOLAC 5.50 ±0.05 SUBSTRATE: PLASTIC LAMINATE 10.00 ±0.10 SOLDER BALL MATERIAL: EUTECTIC 63% Sn, 37% Pb or 62% Sn, 36% Pb, 2%Ag SOLDER BALL PAD: Ø .33mm NOTE: 1. All dimensions in millimeters. DATA SHEET DESIGNATIONS Preliminary: This data sheet contains initial characterization limits that are subject to change upon full characterization of production devices. This designation applies to the MT28F320J3 and MT28F128J3 devices. No Marking: This data sheet contains minimum and maximum limits specified over the complete power supply and temperature range for production devices. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. This designation applies to the MT28F640J3 device. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: [email protected], Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron, the Micron and M logos and Q-Flash are trademarks and/or servicemarks of Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 51 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. 128Mb, 64Mb, 32Mb Q-FLASH MEMORY REVISION HISTORY Rev. 6 ......................................................................................................................................................................................... 8/02 • Added commercial temperature range • Updated Configuration Coding Definitions table • Removed 3.0V–3.6V VCCQ voltage range option • Updated VLKO, VPENLK, tAOA, tODC, tAPA, tCH (tWH), tSTS, and tWB • Added Resume Operations timing diagram Rev. 5 ......................................................................................................................................................................................... 5/02 • Updated MT28F320J3 information Rev. 4 ......................................................................................................................................................................................... 2/02 • Added VCCQ = 4.5V–5.5V parameter for 32Mb and 64Mb devices • Updated erase and program timing parameters • Removed Block Erase Status bit Rev. 3 ......................................................................................................................................................................................... 6/01 • Updated package drawing and corresponding notes Rev. 2 ......................................................................................................................................................................................... 5/01 • Added 128Mb device information • Added 64-ball FBGA (1.0mm pitch) package Original document, Rev. 1 .................................................................................................................................................. 12/00 128Mb, 64Mb, 32Mb Q-Flash Memory MT28F640J3_7.p65 – Rev. 6, Pub. 8/02 52 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc.