RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical Performance RF IN VG Pin 1 (CUT ) RF OUT VD Pin 2 GND BASE • Output Power 140W at P3dB Functional Block Diagram • Drain Efficiency 60% at P3dB • -40°C to 85°C Operation Applications Commercial Wireless Infrastructure Cellular and WiMAX Infrastructure Civilian and Military Radar General Purpose Broadband Amplifiers Public Mobile Radios Industrial, Scientific, and Medical Product Description The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3934 is an unmatched GaN transistor packaged in a hermetic, flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier. Ordering Information RF3934S2 RF3934SB RF3934SQ RF3934SR RF3934TR7 RF3934PCK-411 2-piece sample bag 5-piece bag 25-piece bag 100 pieces on 7” short reel 750 pieces on 7” reel Fully assembled evaluation board optimized for 2.14GHz; 48V Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS120306 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 14 RF3934 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current (IG) 78 mA Operational Voltage 65 V Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TC) -40 to +85 °C 200 °C Operating Junction Temperature (TJ) Human Body Model Class 1A MTTF (TJ < 200°C, 95% Confidence Limits)* 3 x 106 Hours Thermal Resistances, RTH (junction to case) measured at TC=85°C, DC bias only 1.6 °C/W Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. *MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT (random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table below. Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC) / RTH J-C and TC = TCASE Specification Min. Typ. Max. Parameter Unit Condition Recommended Operating Conditions Drain Voltage (VDSQ) 28 Gate Voltage (VGSQ) -4.5 Drain Bias Current -3.7 48 V -2.5 V 3500 MHz 440 Frequency of Operation DC mA Capacitance CRSS 9 pF VG = - 8V, VD = OV CISS 40 pF VG = - 8V, VD = OV COSS 27.5 pF VG = - 8V, VD = OV 2 mA VG = - 8V, Vd = OV 2.5 mA VG = - 8V, Vd = 48V DC Functional Test IG (OFF) - Gate Leakage ID (OFF) - Drain Leakage VGS (TH) - Threshold Voltage -4.2 V VD = 48V, ID = 20mA VDS (ON) - Drain Voltage at high current 0.25 V VG = OV, ID = 1.5A RF Functional Test VGSQ Gain 10 Drain Efficiency 55 Input Return Loss 2 of 14 -3.4 V VD = 48V, ID = 440mA 12 dB CW, POUT = 50.8dBm, f = 2140MHz 60 % CW, POUt = 50.8dBm, f = 2140MHz -12 dB CW, POUT = 50.8dBm, f = 2140MHz 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120306 RF3934 Parameter Specification Min. Typ. Max. Unit 21 dB CW, f = 900MHz RF Typical Performance Small Signal Gain Small Signal Gain Condition [1], [2] 13 dB CW, f = 2140MHz Output Power at P3dB 51.60 dBm CW, f = 900MHz Output Power at P3dB 51.46 dBm CW, f = 2140MHz Drain Efficiency at P3dB 75 % CW, f = 900MHz Drain Efficiency at P3dB 60 % CW, f = 2140MHz [1] Test Conditions: CW operation, VDSQ = 48V, IDQ= 440mA, T = 25ºC [2] Performance in a standard tuned test fixture. DS120306 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 14 RF3934 Typical Performance in Standard 2.14GHz Tuned Test Fixture (CW, T = 25°C, unless otherwise noted) 4 of 14 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120306 RF3934 DS120306 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 14 RF3934 Typical Performance in Standard 900MHz Tuned Test Fixture (CW, T = 25°C, unless otherwise noted) Gain/ Eciency vs. Pout, f = 900MHz 26 80 24 70 22 60 20 50 18 40 16 30 Gain 14 10 20 Drain 12 40 42 44 46 48 Drain Eciency (%) Gain (dB) (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 440mA) 50 10 52 0 Pout, Output Power (dBm) 6 of 14 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120306 RF3934 Gainvs.Pout IMDvs.OutputPower (2Tone1MHzSeperation,Vd=48V,Idqvaried,fc=900MHz) (Vd=48V,Idq=440mA,f1=899.5MHz,f2=900.5MHz) 0 IntermodulationDistortion(IMD dBc) 24 Gain(dB) 23 22 220mA 21 330mA 440mA 20 550mA 660mA 19 1 10 100 Pout,OutputPower(WPEP) DS120306 1000 5 10 IMD3 IMD3 IMD5 IMD5 IMD7 IMD7 15 20 25 30 35 40 45 50 1 10 100 Pout,OutputPower(W PEP) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 14 RF3934 Package Drawing Package Style: Flanged Ceramic 8 of 14 Pin Function Description 1 2 3 Gate Drain Source Gate - VG input Drain - VD RF Output Source - Ground Base 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120306 RF3934 Bias Instruction for RF3934 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board. 1. 2. 3. 4. 5. Connect RF cables at RFIN and RFOUT. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. Apply -8V to VG. Apply 48V to VD. Increase VG until drain current reaches 440mA or desired bias point. 6. Turn on the RF input. DS120306 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 14 RF3934 2.14GHz Evaluation Board Schematic 9*$7( 9'5$,1 & & & & & & & & & 5 - 5),1 & & VWULS 5) & & & VWULS - 5)287 & & 2.14GHz Evaluation Board Bill of Materials 10 of 14 Component Value Manufacturer Part Number C1 10pF ATC ATC800A100JT C2, C10, C11, C15 33pF ATC ATC800A330JT C3,C14 0.1F Murata GRM32NR72A104KA01L C4,C13 4.7F Murata GRM55ER72A475KA01L C5 100F Panasonic ECE-V1HA101UP C6 2.0pF ATC ATC800A2R0BT C7 0.3pF ATC ATC800A0R3BT C8 1.5pF ATC ATC800A1R5BT C9 2.7pF ATC ATC800A2R7BT C12 100F Panasonic EEV-TG2A101M C17 1.8pF ATC ATC800A1R8BT R1 10 Panasonic ERJ-8GEYJ100V C16, C18, C19 Not used - - PCB RO4350, 0.030" thick dielectric Rogers - 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120306 RF3934 2.14GHz Evaluation Board Layout Device Impedances Frequency Z Source () 2110MHz 1.58 - j2.56 Z Load ( 3.5 - j0.08 2140MHz 1.49 - j2.25 3.46 + j0.38 2170MHz 1.42 - j1.96 3.43 + j0.85 Note: Device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity performance across the entire frequency bandwidth. DS120306 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 11 of 14 RF3934 900MHz Evaluation Board Schematic VGATE VDRAIN C5 C4 C3 C1 C11 C14 C13 + + R1 J1 RF IN 50 strip RF3934 C2 C6 C7 C8 C9 C10 50 strip C12 J2 RF OUT C15 900MHz Evaluation Board Bill of Materials 12 of 14 Component Value Manufacturer Part Number C1, C2, C10, C11 68pF ATC ATC800A680JT C3,C14 0.1F Murata GRM32NR72A104KA01L C4,C13 4.7F Murata GRM55ER72A475KA01L C15 NOT POPULATED C6 15pF ATC ATC800A150JT C7 22pF ATC ATC800A220JT C8 12pF ATC ATC800A120JT C9 2.2pF ATC ATC800A2R2BT C12 330F Panasonic EEU-FC2A331 C5 100F Panasonic ECE-V1HA101UP R1 10 Panasonic ERJ-8GEYJ100V 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120306 RF3934 900MHz Evaluation Board Layout Device Impedances Frequency Z Source() Z Load ( 880MHz 1.24 + j3.0 5.49 + j3.4 900MHz 1.14 + j3.63 5.27 + j3.9 920MHz 1.11 + j4.20 5.03 + j4.40 Note: Device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity performance across the entire frequency bandwidth. DS120306 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 13 of 14 RF3934 Device Handling/Environmental Conditions GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. GaN HEMT Capacitances The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance values presented in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse (CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows: CISS = CGD + CGS COSS = CGD + CDS CRSS = CGD DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance trade-offs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. 14 of 14 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120306