NCP160 250 mA, Ultra-Low Noise and High PSRR LDO Regulator for RF and Analog Circuits www.onsemi.com The NCP160 is a linear regulator capable of supplying 250 mA output current. Designed to meet the requirements of RF and analog circuits, the NCP160 device provides low noise, high PSRR, low quiescent current, and very good load/line transients. The device is designed to work with a 1 mF input and a 1 mF output ceramic capacitor. It is available in two thickness ultra−small 0.35P, 0.65 mm x 0.65 mm Chip Scale Package (CSP) and XDFN−4 0.65P, 1 mm x 1 mm. MARKING DIAGRAMS A1 X A1 X WLCSP4 CASE 567KA Features • • • • • • • • • • • Operating Input Voltage Range: 1.9 V to 5.5 V Available in Fixed Voltage Option: 1.8 V to 5.14 V ±2% Accuracy Over Load/Temperature Ultra Low Quiescent Current Typ. 18 mA Standby Current: Typ. 0.1 mA Very Low Dropout: 80 mV at 250 mA Ultra High PSRR: Typ. 98 dB at 20 mA, f = 1 kHz Ultra Low Noise: 10 mVRMS Stable with a 1 mF Small Case Size Ceramic Capacitors Available in −WLCSP4 0.65 mm x 0.65 mm x 0.4 mm CASE 567KA −WLCSP4 0.65 mm x 0.65 mm x 0.33 mm CASE 567JZ −XDFN4 1 mm x 1 mm x 0.4 mm These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant WLCSP4 CASE 567JZ 1 XDFN4 CASE 711AJ XX M 1 X or XX = Specific Device Code M = Date Code PIN CONNECTIONS IN OUT A1 A2 B1 B2 EN GND Typical Applications • • • • Battery−powered Equipment Wireless LAN Devices Smartphones, Tablets Cameras, DVRs, STB and Camcorders (Top View) VOUT VIN IN OUT NCP160 CIN 1 mF Ceramic EN COUT 1 mF Ceramic ON OFF GND (Top View) ORDERING INFORMATION See detailed ordering and shipping information on page 16 of this data sheet. Figure 1. Typical Application Schematics © Semiconductor Components Industries, LLC, 2015 May, 2015 − Rev. 6 1 Publication Order Number: NCP160/D NCP160 IN EN ENABLE THERMAL LOGIC SHUTDOWN BANDGAP MOSFET REFERENCE INTEGRATED DRIVER WITH SOFT−START CURRENT LIMIT OUT * ACTIVE DISCHARGE Version A only EN GND Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. CSP4 Pin No. XDFN4 Pin Name A1 4 IN A2 1 OUT B1 3 EN B2 2 GND Common ground connection − EPAD EPAD Expose pad can be tied to ground plane for better power dissipation Description Input voltage supply pin Regulated output voltage. The output should be bypassed with small 1 mF ceramic capacitor. Chip enable: Applying VEN < 0.4 V disables the regulator, Pulling VEN > 1.2 V enables the LDO. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN −0.3 V to 6 V Output Voltage VOUT −0.3 to VIN + 0.3, max. 6 V V Chip Enable Input VCE −0.3 to VIN + 0.3, max. 6 V V Output Short Circuit Duration tSC unlimited s Maximum Junction Temperature TJ 150 °C TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Input Voltage (Note 1) Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114 ESD Machine Model tested per EIA/JESD22−A115 Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS Rating Symbol Thermal Characteristics, CSP4 (Note 3) Thermal Resistance, Junction−to−Air Value Unit 108 °C/W RqJA Thermal Characteristics, XDFN4 (Note 3) Thermal Resistance, Junction−to−Air 198.1 3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51−7 www.onsemi.com 2 NCP160 ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 1 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise noted. VEN = 1.2 V. Typical values are at TJ = +25°C (Note 4). Parameter Test Conditions Symbol Min VIN VIN = VOUT(NOM) + 1 V 0 mA ≤ IOUT ≤ 250 mA VOUT Line Regulation VOUT(NOM) + 1 V ≤ VIN ≤ 5.5 V LineReg 0.02 %/V Load Regulation IOUT = 1 mA to 250 mA LoadReg 0.001 %/mA Operating Input Voltage Output Voltage Accuracy Dropout Voltage (Note 5) Max Unit 1.9 5.5 V −2 +2 % VOUT(NOM) = 1.8 V 180 250 VOUT(NOM) = 2.5 V 110 175 VOUT(NOM) = 2.8 V 95 160 VOUT(NOM) = 2.85 V 95 160 90 155 80 145 VOUT(NOM) = 3.5 V 75 140 VOUT(NOM) = 4.5 V 65 120 VOUT(NOM) = 5.0 V 75 105 VOUT(NOM) = 5.14 V 60 105 VOUT(NOM) = 3.0 V IOUT = 250 mA Typ VOUT(NOM) = 3.3 V VDO Output Current Limit VOUT = 90% VOUT(NOM) ICL Short Circuit Current VOUT = 0 V ISC 690 Quiescent Current IOUT = 0 mA IQ 18 23 mA Shutdown Current VEN ≤ 0.4 V, VIN = 4.8 V IDIS 0.01 1 mA EN Input Voltage “H” VENH EN Input Voltage “L” VENL VEN = 4.8 V IEN EN Pin Threshold Voltage EN Pull Down Current Turn−On Time Power Supply Rejection Ratio Output Voltage Noise Thermal Shutdown Threshold Active Output Discharge Resistance Line Transient (Note 6) IOUT = 20 mA 700 mA 1.2 0.4 0.2 COUT = 1 mF, From assertion of VEN to VOUT = 95% VOUT(NOM) 0.5 V mA 120 ms dB f = 100 Hz f = 1 kHz f = 10 kHz f = 100 kHz PSRR 91 98 82 48 IOUT = 1 mA IOUT = 250 mA VN 14 10 mVRMS Temperature rising TSDH 160 °C Temperature falling TSDL 140 °C VEN < 0.4 V, Version A only RDIS 280 W f = 10 Hz to 100 kHz VIN = (VOUT(NOM) + 1 V) to (VOUT(NOM) + 1.6 V) in 30 ms, IOUT = 1 mA VIN = (VOUT(NOM) + 1.6 V) to (VOUT(NOM) + 1 V) in 30 ms, IOUT = 1 mA Load Transient (Note 6) 250 mV IOUT = 1 mA to 200 mA in 10 ms IOUT = 200 mA to 1mA in 10 ms −1 TranLINE mV +1 −40 TranLOAD +40 mV Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C. Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible. 5. Dropout voltage is characterized when VOUT falls 100 mV below VOUT(NOM). 6. Guaranteed by design. www.onsemi.com 3 NCP160 TYPICAL CHARACTERISTICS 2.520 1.820 1.815 VOUT, OUTPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) IOUT = 10 mA 1.810 1.805 IOUT = 250 mA 1.800 1.795 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 1.790 1.785 0 20 40 60 80 100 120 2.505 IOUT = 250 mA 2.500 2.495 VIN = 3.5 V VOUT = 2.5 V CIN = 1 mF COUT = 1 mF 2.490 2.485 2.480 −40 −20 140 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Output Voltage vs. Temperature − VOUT = 1.8 V − XDFN Package Figure 4. Output Voltage vs. Temperature − VOUT = 2.5 V − XDFN Package 3.33 3.35 3.32 3.34 3.31 IOUT = 10 mA 3.30 3.29 IOUT = 250 mA 3.28 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 3.27 3.26 3.25 −40 −20 0 20 40 60 80 100 120 3.33 IOUT = 10 mA and 250 mA 3.32 3.31 3.30 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 3.29 3.28 3.27 −40 −20 140 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Output Voltage vs. Temperature − VOUT = 3.3 V − XDFN Package Figure 6. Output Voltage vs. Temperature − VOUT = 3.3 V − CSP Package 0.010 REGLINE, LINE REGULATION (%/V) 5.19 VOUT, OUTPUT VOLTAGE (V) IOUT = 10 mA 2.510 VOUT, OUTPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) 1.780 −40 −20 2.515 5.18 5.17 IOUT = 10 mA 5.16 5.15 IOUT = 250 mA 5.14 VIN = 5.5 V VOUT = 5.14 V CIN = 1 mF COUT = 1 mF 5.13 5.12 5.11 −40 −20 0 20 40 60 80 100 120 140 0.009 0.008 0.007 0.006 0.005 0.004 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 0.003 0.002 0.001 0 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Output Voltage vs. Temperature − VOUT = 5.14 V − XDFN Package Figure 8. Line Regulation vs. Temperature − VOUT = 1.8 V www.onsemi.com 4 NCP160 TYPICAL CHARACTERISTICS REGLINE, LINE REGULATION (%/V) 0.020 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.002 0.001 0 −40 −20 0 20 40 60 80 100 120 140 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0 −40 −20 60 80 100 120 140 0.0014 0.0012 0.0010 0.0008 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 0.0006 0.0004 0.0002 0 −40 −20 0 20 40 60 80 100 120 0.0020 0.0018 0.0016 0.0014 0.0012 0.0010 0.0008 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.0006 0.0004 0.0002 0 140 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 11. Load Regulation vs. Temperature − VOUT = 1.8 V Figure 12. Load Regulation vs. Temperature − VOUT = 3.3 V 0.0020 1.50 VIN = 5.5 V VOUT = 5.14 V CIN = 1 mF COUT = 1 mF IGND, GROUND CURRENT (mA) REGLOAD, LOAD REGULATION (%/mA) 40 Figure 10. Line Regulation vs. Temperature − VOUT = 5.14 V 0.0016 0.0014 20 Figure 9. Line Regulation vs. Temperature − VOUT = 3.3 V 0.0018 0.0018 0 TJ, JUNCTION TEMPERATURE (°C) 0.0020 0.0016 VIN = 5.5 V VOUT = 5.14 V CIN = 1 mF COUT = 1 mF 0.018 TJ, JUNCTION TEMPERATURE (°C) REGLOAD, LOAD REGULATION (%/mA) REGLOAD, LOAD REGULATION (%/mA) REGLINE, LINE REGULATION (%/V) 0.010 0.0012 0.0010 0.0008 0.0006 0.0004 0.0002 0 −40 −20 0 20 40 60 80 100 120 140 1.35 1.20 TJ = 125°C 1.05 TJ = 25°C 0.90 0.75 0.60 TJ = −40°C 0.45 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 0.30 0.15 0 0 25 50 75 100 125 150 175 200 225 250 TJ, JUNCTION TEMPERATURE (°C) IOUT, OUTPUT CURRENT (mA) Figure 13. Load Regulation vs. Temperature − VOUT = 5.14 V Figure 14. Ground Current vs. Load Current − VOUT = 1.8 V www.onsemi.com 5 NCP160 1.50 1.50 1.35 1.35 IGND, GROUND CURRENT (mA) IGND, GROUND CURRENT (mA) TYPICAL CHARACTERISTICS 1.20 TJ = 125°C 1.05 TJ = 25°C 0.90 0.75 0.60 TJ = −40°C 0.45 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.30 0.15 0 0 25 50 75 100 125 150 175 200 TJ = 25°C 0.90 0.75 0.60 TJ = −40°C 0.45 VIN = 5.5 V VOUT = 5.14 V CIN = 1 mF COUT = 1 mF 0.30 0.15 0 0 25 50 75 100 125 150 175 200 225 250 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA) Figure 15. Ground Current vs. Load Current − VOUT = 3.3 V Figure 16. Ground Current vs. Load Current − VOUT = 5.14 V 150 VDROP, DROPOUT VOLTAGE (mV) VDROP, DROPOUT VOLTAGE (mV) 1.05 225 250 250 225 200 TJ = 125°C 175 TJ = 25°C 150 125 100 TJ = −40°C 75 VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 50 25 0 0 25 50 75 100 125 150 175 200 135 120 105 90 TJ = 125°C 75 60 TJ = 25°C 45 TJ = −40°C 30 VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 15 0 0 225 250 25 50 75 100 125 150 175 200 225 250 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA) Figure 17. Dropout Voltage vs. Load Current − VOUT = 1.8 V Figure 18. Dropout Voltage vs. Load Current − VOUT = 3.3 V 250 VDROP, DROPOUT VOLTAGE (mV) 150 VDROP, DROPOUT VOLTAGE (mV) TJ = 125°C 1.20 135 120 105 90 75 TJ = 125°C 60 TJ = 25°C 45 TJ = −40°C 30 VOUT = 5.14 V CIN = 1 mF COUT = 1 mF 15 0 0 25 50 75 100 125 150 175 200 225 250 225 200 175 IOUT = 250 mA 150 VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 125 100 75 IOUT = 0 mA 50 25 0 −40 −20 0 20 40 60 80 100 120 140 IOUT, OUTPUT CURRENT (mA) TJ, JUNCTION TEMPERATURE (°C) Figure 19. Dropout Voltage vs. Load Current − VOUT = 5.14 V Figure 20. Dropout Voltage vs. Temperature− VOUT = 1.8 V www.onsemi.com 6 NCP160 TYPICAL CHARACTERISTICS VDROP, DROPOUT VOLTAGE (mV) 150 180 160 XDFN 140 120 CSP4 Package 100 80 60 40 20 135 120 105 90 XDFN 75 60 CSP4 Package 45 30 15 0 0 0 25 50 75 100 125 150 175 200 225 250 0 25 50 75 100 125 150 175 200 225 250 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA) Figure 21. Comparison Dropout for XDFN and CSP – 1.8 V Figure 22. Comparison Dropout for XDFN and CSP – 3.3 V 100 VDROP, DROPOUT VOLTAGE (mV) VDROP, DROPOUT VOLTAGE (mV) 200 80 XDFN 60 CSP4 Package 40 20 0 0 25 50 75 100 125 150 175 200 225 250 IOUT, OUTPUT CURRENT (mA) Figure 23. Comparison Dropout for XDFN and CSP – 5.14 V www.onsemi.com 7 NCP160 TYPICAL CHARACTERISTICS 100 VDROP, DROPOUT VOLTAGE (mV) VDROP, DROPOUT VOLTAGE (mV) 150 135 120 IOUT = 250 mA 105 90 75 60 IOUT = 0 mA 45 VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 30 15 0 −40 −20 0 20 40 60 80 100 120 140 70 60 IOUT = 0 mA 50 40 30 VOUT = 5.14 V CIN = 1 mF COUT = 1 mF 20 10 0 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 24. Dropout Voltage vs. Temperature− VOUT = 3.3 V Figure 25. Dropout Voltage vs. Temperature− VOUT = 5.14 V ICL, SHORT CIRCUIT CURRENT (mA) 740 730 720 710 700 690 680 VIN = 4.3 V VOUT = 90% VOUT(nom) CIN = 1 mF COUT = 1 mF 670 660 650 −40 −20 0 20 40 60 80 100 120 140 700 690 680 670 660 650 640 VIN = 4.3 V VOUT = 0 V (Short) CIN = 1 mF COUT = 1 mF 630 620 610 600 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 26. Current Limit vs. Temperature Figure 27. Short Circuit Current vs. Temperature 1.0 0.50 0.9 IEN, ENABLE PIN CURRENT (mA) ICL, CURRENT LIMIT (mA) IOUT = 250 mA 80 TJ, JUNCTION TEMPERATURE (°C) 750 VEN, ENABLE VOLTAGE THRESHOLD (V) 90 0.8 OFF −> ON 0.7 0.6 ON −> OFF 0.5 0.4 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.3 0.2 0.1 0 −40 −20 0 20 40 60 80 100 120 140 0.45 0.40 0.35 0.30 0.25 0.20 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.15 0.10 0.05 0 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 28. Enable Threshold Voltage vs. Temperature Figure 29. Enable Current Temperature www.onsemi.com 8 NCP160 TYPICAL CHARACTERISTICS 300 90 80 70 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF RDIS, DISCHARGE RESISTIVITY IDIS, DISABLE CURRENT (nA) 100 60 50 40 30 20 10 0 −40 −20 0 20 40 60 80 100 120 140 290 280 270 260 250 240 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 230 220 210 200 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 30. Disable Current vs. Temperature Figure 31. Discharge Resistivity vs. Temperature OUTPUT VOLTAGE NOISE (nV/√Hz) 10,000 IOUT = 250 mA 1000 IOUT = 10 mA RMS Output Noise (mV) IOUT = 1 mA 100 10 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF IOUT 10 Hz − 100 kHz 100 Hz − 100 kHz 1 mA 14.62 14.10 10 mA 11.12 10.48 250 mA 10.37 9.82 1 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 32. Output Voltage Noise Spectral Density − VOUT = 1.8 V OUTPUT VOLTAGE NOISE (nV/√Hz) 10,000 IOUT = 250 mA 1000 IOUT = 10 mA RMS Output Noise (mV) IOUT = 1 mA 100 10 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF IOUT 10 Hz − 100 kHz 100 Hz − 100 kHz 1 mA 16.9 15.79 10 mA 12.64 11.13 250 mA 11.96 10.64 1 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 33. Output Voltage Noise Spectral Density − VOUT = 3.3 V www.onsemi.com 9 NCP160 TYPICAL CHARACTERISTICS 120 120 IOUT = 10 mA VIN = 2.5 V VOUT = 1.8 V COUT = 1 mF 100 RR, RIPPLE REJECTION (dB) 80 60 IOUT = 20 mA 40 20 IOUT = 100 mA IOUT = 250 mA 0 0.1 1 10 100 1k 40 IOUT = 100 mA 20 IOUT = 250 mA 0.01 0.1 1 10 100 1k FREQUENCY (kHz) Figure 34. Power Supply Rejection Ratio, VOUT = 1.8 V Figure 35. Power Supply Rejection Ratio, VOUT = 3.3 V 10k 100 IOUT = 10 mA VIN = 5.5 V VOUT = 5.14 V COUT = 1 mF Unstable Operation 70 10 50 ESR (W) 60 IOUT = 20 mA 40 30 1 IOUT = 100 mA Stable Operation 20 IOUT = 250 mA 0.1 0.01 0.1 1 10 100 1k 10k 0 50 100 150 200 IOUT, OUTPUT CURRENT (mA) Figure 36. Power Supply Rejection Ratio, VOUT = 5.14 V Figure 37. Stability vs. ESR VEN 1 V/div IINPUT VOUT 500 mV/div FREQUENCY (kHz) 200 mA/div RR, RIPPLE REJECTION (dB) IOUT = 20 mA FREQUENCY (kHz) 80 10 0 500 mV/div 60 10k 100 1 V/div 80 0 0.01 90 VIN = 3.6 V VOUT = 3.3 V COUT = 1 mF 100 VIN = 2.8 V, VOUT = 1.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 250 VEN IINPUT VOUT VIN = 2.8 V, VOUT = 1.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 100 ms/div 100 ms/div Figure 38. Enable Turn−on Response − COUT = 1 mF, IOUT = 10 mA Figure 39. Enable Turn−on Response − COUT = 1 mF, IOUT = 250 mA www.onsemi.com 10 300 200 mA/div RR, RIPPLE REJECTION (dB) IOUT = 10 mA NCP160 TYPICAL CHARACTERISTICS 500 mV/div 10 mV/div 2.3 V VIN VOUT VOUT = 1.8 V, IOUT = 10 mA CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 3.8 V VIN VOUT VOUT = 3.3 V, IOUT = 10 mA CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 20 ms/div 20 ms/div Figure 40. Line Transient Response − VOUT = 1.8 V Figure 41. Line Transient Response − VOUT = 3.3 V 5.5 V VIN VIN 5.3 V VOUT 1 V/div VOUT VOUT = 5.14 V, IOUT = 10 mA CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) VOUT = 2.8 V, CIN = 1 mF (MLCC), IOUT = 10 mA, COUT = 1 mF (MLCC) 4 ms/div Figure 43. Turn−on/off − Slow Rising VIN IOUT 100 mA/div 20 ms/div Figure 42. Line Transient Response − VOUT = 5.14 V tRISE = 1 ms 50 mV/div 50 mV/div 100 mA/div 10 mV/div 200 mV/div 10 mV/div 500 mV/div 4.8 V 3.3 V VOUT VIN = 2.8 V, VOUT = 1.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) IOUT tFALL = 1 ms VOUT VIN = 2.8 V, VOUT = 1.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 4 ms/div 20 ms/div Figure 44. Load Transient Response − 1 mA to 250 mA − VOUT = 1.8 V Figure 45. Load Transient Response − 250 mA to 1 mA − VOUT = 1.8 V www.onsemi.com 11 NCP160 TYPICAL CHARACTERISTICS 100 mA/div IOUT tRISE = 1 ms 50 mV/div 50 mV/div 100 mA/div IOUT VOUT VIN = 4.3 V, VOUT = 3.3 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) tFALL = 1 ms VOUT VIN = 4.3 V, VOUT = 3.3 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 4 ms/div 20 ms/div Figure 46. Load Transient Response − 1 mA to 250 mA − VOUT = 3.3 V Figure 47. Load Transient Response − 250 mA to 1 mA − VOUT = 3.3 V VOUT VIN = 5.5 V, VOUT = 5.14 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) VOUT VIN = 5.5 V, VOUT = 5.14 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 20 ms/div Figure 48. Load Transient Response − 1 mA to 250 mA − VOUT = 5.14 V Figure 49. Load Transient Response − 250 mA to 1 mA − VOUT = 5.14 V TSD Cycling 500 mV/div 500 mA/div tFALL = 1 ms 4 ms/div Short Circuit Event Overheating 1 V/div 100 mA/div tRISE = 1 ms 50 mV/div IOUT VEN IOUT VOUT VOUT Thermal Shutdown VIN = 5.5 V, VOUT = 3.3 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) COUT = 4.7 mF 1 V/div 50 mV/div 100 mA/div IOUT VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF (MLCC) COUT = 1 mF 10 ms/div 400 ms/div Figure 50. Short Circuit and Thermal Shutdown Figure 51. Enable Turn−off www.onsemi.com 12 NCP160 APPLICATIONS INFORMATION General transient response or high frequency PSRR. It is not recommended to use tantalum capacitors on the output due to their large ESR. The equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. The NCP160 is an ultra−low noise 250 mA low dropout regulator designed to meet the requirements of RF applications and high performance analog circuits. The NCP160 device provides very high PSRR and excellent dynamic response. In connection with low quiescent current this device is well suitable for battery powered application such as cell phones, tablets and other. The NCP160 is fully protected in case of current overload, output short circuit and overheating. Enable Operation Input capacitor connected as close as possible is necessary for ensure device stability. The X7R or X5R capacitor should be used for reliable performance over temperature range. The value of the input capacitor should be 1 mF or greater to ensure the best dynamic performance. This capacitor will provide a low impedance path for unwanted AC signals or noise modulated onto constant input voltage. There is no requirement for the ESR of the input capacitor but it is recommended to use ceramic capacitors for their low ESR and ESL. A good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. The NCP160 uses the EN pin to enable/disable its device and to deactivate/activate the active discharge function. If the EN pin voltage is <0.4 V the device is guaranteed to be disabled. The pass transistor is turned−off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND through a 280 Ω resistor. In the disable state the device consumes as low as typ. 10 nA from the VIN. If the EN pin voltage >1.2 V the device is guaranteed to be enabled. The NCP160 regulates the output voltage and the active discharge transistor is turned−off. The EN pin has internal pull−down current source with typ. value of 200 nA which assures that the device is turned−off when the EN pin is not connected. In the case where the EN function isn’t required the EN should be tied directly to IN. Output Decoupling (COUT) Output Current Limit The NCP160 requires an output capacitor connected as close as possible to the output pin of the regulator. The recommended capacitor value is 1 mF and X7R or X5R dielectric due to its low capacitance variations over the specified temperature range. The NCP160 is designed to remain stable with minimum effective capacitance of 0.7 mF to account for changes with temperature, DC bias and package size. Especially for small package size capacitors such as 0201 the effective capacitance drops rapidly with the applied DC bias. Please refer Figure 52. Output Current is internally limited within the IC to a typical 700 mA. The NCP60 will source this amount of current measured with a voltage drops on the 90% of the nominal VOUT. If the Output Voltage is directly shorted to ground (VOUT = 0 V), the short circuit protection will limit the output current to 690 mA (typ). The current limit and short circuit protection will work properly over whole temperature range and also input voltage range. There is no limitation for the short circuit duration. Input Capacitor Selection (CIN) Thermal Shutdown When the die temperature exceeds the Thermal Shutdown threshold (TSD * 160°C typical), Thermal Shutdown event is detected and the device is disabled. The IC will remain in this state until the die temperature decreases below the Thermal Shutdown Reset threshold (TSDU − 140°C typical). Once the IC temperature falls below the 140°C the LDO is enabled again. The thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. Power Dissipation As power dissipated in the NCP160 increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. Figure 52. Capacity vs DC Bias Voltage There is no requirement for the minimum value of Equivalent Series Resistance (ESR) for the COUT but the maximum value of ESR should be less than 2 W. Larger output capacitors and lower ESR could improve the load www.onsemi.com 13 NCP160 The maximum power dissipation the NCP160 can handle is given by: ƪ125oC * T Aƫ P D [ V IN @ I GND ) I OUTǒV IN * V OUTǓ (eq. 1) q JA 160 1.6 PD(MAX), TA = 25°C, 2 oz Cu 150 PD(MAX), TA = 25°C, 1 oz Cu 140 1.4 1.2 130 1.0 120 0.8 qJA, 1 oz Cu 110 0.6 0.4 100 qJA, 2 oz Cu 90 0.2 80 0 100 200 300 400 500 600 PD(MAX), MAXIMUM POWER DISSIPATION (W) qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W) P D(MAX) + The power dissipated by the NCP160 for given application conditions can be calculated from the following equations: 0 700 PCB COPPER AREA (mm2) 1.0 220 qJA, 2 oz Cu 210 0.9 200 0.8 qJA, 1 oz Cu 190 0.7 PD(MAX), TA = 25°C, 2 oz Cu PD(MAX), TA = 25°C, 1 oz Cu 180 0.6 170 0.5 160 0.4 150 0 100 200 300 400 PCB COPPER AREA (mm2) 500 600 Figure 54. qJA and PD (MAX) vs. Copper Area (XDFN44) www.onsemi.com 14 0.3 700 PD(MAX), MAXIMUM POWER DISSIPATION (W) qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W) Figure 53. qJA and PD (MAX) vs. Copper Area (CSP4) (eq. 2) NCP160 Reverse Current Turn−On Time The PMOS pass transistor has an inherent body diode which will be forward biased in the case that VOUT > VIN. Due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. The turn−on time is defined as the time period from EN assertion to the point in which VOUT will reach 98% of its nominal value. This time is dependent on various application conditions such as VOUT(NOM), COUT, TA. Power Supply Rejection Ratio To obtain good transient performance and good regulation characteristics place CIN and COUT capacitors close to the device pins and make the PCB traces wide. In order to minimize the solution size, use 0402 or 0201 capacitors with appropriate capacity. Larger copper area connected to the pins will also improve the device thermal resistance. The actual power dissipation can be calculated from the equation above (Equation 2). Expose pad can be tied to the GND pin for improvement power dissipation and lower device temperature. PCB Layout Recommendations The NCP160 features very high Power Supply Rejection ratio. If desired the PSRR at higher frequencies in the range 100 kHz – 10 MHz can be tuned by the selection of COUT capacitor and proper PCB layout. www.onsemi.com 15 NCP160 ORDERING INFORMATION Device Nominal Output Voltage Description Marking Rotation NCP160AFCS180T2G 1.8 V A 0° NCP160AFCS250T2G 2.5 V D 0° NCP160AFCS280T2G 2.8 V E 0° NCP160AFCS285T2G 2.85 V F 0° NCP160AFCS300T2G 3.0 V J 0° NCP160AFCS320T2G 3.2 V V 0° NCP160AFCS330T2G 3.3 V K 0° NCP160AFCS350T2G 3.5 V L 0° NCP160AFCS450T2G 4.5 V P 0° NCP160AFCS500T2G 5.0 V R 0° NCP160AFCS514T2G 5.14 V Q 0° NCP160BFCS180T2G 1.8 V A 90° NCP160BFCS250T2G 2.5 V D 90° NCP160BFCS280T2G 2.8 V E 90° NCP160BFCS285T2G 2.85 V F 90° NCP160BFCS300T2G 3.0 V J 90° NCP160BFCS330T2G 3.3 V K 90° NCP160BFCS350T2G 3.5 V L 90° NCP160BFCS450T2G 4.5 V P 90° NCP160BFCS500T2G 5.0 V R 90° NCP160BFCS514T2G 5.14 V Q 90° NCP160AFCT180T2G 1.8 V A 0° NCP160AFCT250T2G 2.5 V D 0° NCP160AFCT280T2G 2.8 V E 0° NCP160AFCT285T2G 2.85 V F 0° NCP160AFCT300T2G 3.0 V J 0° K 0° L 0° 250 mA, Active Discharge 250 mA, Non-Active Discharge 250 mA, Active Discharge NCP160AFCT330T2G 3.3 V NCP160AFCT350T2G 3.5 V NCP160AFCT450T2G 4.5 V P 0° NCP160AFCT500T2G 5.0 V R 0° NCP160AFCT514T2G 5.14 V Q 0° NCP160BFCT180T2G 1.8 V A 90° NCP160BFCT210T2G 2.1 V T 90° NCP160BFCT250T2G 2.5 V D 90° NCP160BFCT280T2G 2.8 V E 90° NCP160BFCT285T2G 2.85 V F 90° NCP160BFCT300T2G 3.0 V J 90° NCP160BFCT330T2G 3.3 V K 90° NCP160BFCT350T2G 3.5 V L 90° NCP160BFCT450T2G 4.5 V P 90° 250 mA, Non-Active Discharge NCP160BFCT500T2G 5.0 V R 90° NCP160BFCT514T2G 5.14 V Q 90° www.onsemi.com 16 Package Shipping† WLCSP4 CASE 567KA (Pb-Free) 5000 / Tape & Reel WLCSP4 CASE 567KA (Pb-Free) 5000 / Tape & Reel WLCSP4 CASE 567JZ (Pb-Free) 5000 / Tape & Reel WLCSP4 CASE 567JZ (Pb-Free) 5000 / Tape & Reel NCP160 ORDERING INFORMATION Device Nominal Output Voltage Description Marking NCP160AMX180TBG 1.8 V DF NCP160AMX250TBG 2.5 V DG NCP160AMX280TBG 2.8 V DH NCP160AMX285TBG 2.85 V DJ NCP160AMX300TBG 3.0 V DK NCP160AMX320TBG 3.2 V NCP160AMX330TBG 3.3 V DA NCP160AMX350TBG 3.5 V DL NCP160AMX450TBG 4.5 V DM NCP160AMX500TBG 5.0 V DW NCP160AMX514TBG 5.14 V DC NCP160BMX180TBG 1.8 V EF NCP160BMX250TBG 2.5 V EG NCP160BMX280TBG 2.8 V EH NCP160BMX285TBG 2.85 V EJ NCP160BMX300TBG 3.0 V EK NCP160BMX330TBG 3.3 V NCP160BMX350TBG 3.5 V EL NCP160BMX450TBG 4.5 V EM NCP160BMX500TBG 5.0 V EW NCP160BMX514TBG 5.14 V EC 250 mA, Active Discharge 250 mA, Non-Active Discharge DY EA Package Shipping XDFN-4 (Pb-Free) 3000 / Tape & Reel (Available Soon) XDFN-4 (Pb-Free) 3000 / Tape & Reel (Available Soon) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 17 NCP160 PACKAGE DIMENSIONS WLCSP4, 0.64x0.64 CASE 567KA ISSUE O A D È PIN A1 REFERENCE 0.05 C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. B E DIM A A1 A2 b D E e 0.05 C TOP VIEW 2X A2 0.05 C A RECOMMENDED SOLDERING FOOTPRINT* 0.05 C A1 NOTE 3 C SIDE VIEW SEATING PLANE A1 4X 0.03 C PACKAGE OUTLINE e b 0.05 C A B MILLIMETERS MIN MAX 0.35 0.45 0.14 0.18 0.25 REF 0.185 0.215 0.64 BSC 0.64 BSC 0.35 BSC e 0.35 PITCH B A 1 4X 0.20 0.35 PITCH DIMENSIONS: MILLIMETERS 2 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BOTTOM VIEW www.onsemi.com 18 NCP160 PACKAGE DIMENSIONS XDFN4 1.0x1.0, 0.65P CASE 711AJ ISSUE O PIN ONE REFERENCE 0.05 C 2X 4X A B D ÉÉ ÉÉ E 4X L2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 mm FROM THE TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. b2 DETAIL A DIM A A1 A3 b b2 D D2 E e L L2 0.05 C 2X TOP VIEW (A3) 0.05 C A 0.05 C NOTE 4 A1 SIDE VIEW C SEATING PLANE MILLIMETERS MIN MAX 0.33 0.43 0.00 0.05 0.10 REF 0.15 0.25 0.02 0.12 1.00 BSC 0.43 0.53 1.00 BSC 0.65 BSC 0.20 0.30 0.07 0.17 e RECOMMENDED MOUNTING FOOTPRINT* e/2 DETAIL A 1 4X 2 L 0.65 PITCH D2 45 5 PACKAGE OUTLINE D2 4 3 4X 4X BOTTOM VIEW 2X 0.52 b 0.05 4X M 0.11 0.39 1.20 C A B NOTE 3 4X 0.24 4X 0.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 19 NCP160 PACKAGE DIMENSIONS WLCSP4, 0.64x0.64 CASE 567JZ ISSUE O A D È PIN A1 REFERENCE 0.05 C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. B E DIM A A1 A2 b D E e 0.05 C TOP VIEW 2X A2 0.05 C A RECOMMENDED SOLDERING FOOTPRINT* 0.05 C A1 NOTE 3 C SIDE VIEW SEATING PLANE A1 4X PACKAGE OUTLINE e b 0.03 C A B MILLIMETERS MIN MAX −−− 0.33 0.04 0.08 0.23 REF 0.195 0.225 0.64 BSC 0.64 BSC 0.35 BSC e 0.35 PITCH B A 1 4X 0.20 0.35 PITCH DIMENSIONS: MILLIMETERS 2 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BOTTOM VIEW ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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