BSC047N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 80 V RDS(on),max 4.7 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type BSC047N08NS3 G Package PG-TDSON-8 Marking 047N08NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 100 V GS=10 V, T C=100 °C 79 V GS=10 V, T A=25 °C, R thJA=50 K/W 2) Unit A 18 Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 Ω 310 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information 2) Rev. 2.7 page 1 2012-04-04 BSC047N08NS3 G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 125 T A=25 °C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. - - 1 Thermal characteristics Thermal resistance, junction - case R thJC bottom top Device on PCB R thJA K/W 18 minimal footprint - - 62 6 cm2 cooling area2) - - 50 80 - - Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2 2.8 3.5 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=80 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=50 A - 3.9 4.7 mΩ V GS=6 V, I D=25 A - 5.6 8.9 - 2.2 - Ω 60 120 - S Gate resistance RG Transconductance g fs Rev. 2.7 |V DS|>2|I D|R DS(on)max, I D=100 A page 2 2012-04-04 BSC047N08NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 3600 4800 - 960 1300 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=40 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 36 - Turn-on delay time t d(on) - 18 - Rise time tr - 17 - Turn-off delay time t d(off) - 44 - Fall time tf - 11 - Gate to source charge Q gs - 16 - Gate charge at threshold Q g(th) - 10 - Gate to drain charge Q gd - 10 - S it hi charge Switching h Q sw - 17 - Gate charge total Qg - 52 69 Gate plateau voltage V plateau - 4.8 - Output charge Q oss - 70 93 nC - - 100 A - - 400 - 1.0 1.2 V - 61 - ns - 109 - nC V DD=40 V, V GS=10 V, I D=25 A, R G=1.6 Ω ns Gate Charge Characteristics5) V DD=40 V, I D=25 A, V GS=0 to 10 V V DD=40 V, V GS=0 V nC V Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) T C=25 °C V GS=0 V, I F=50 A, T j=25 °C V R=40 V, I F=25A, di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.7 page 3 2012-04-04 BSC047N08NS3 G 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 150 120 125 100 100 80 ID [A] Ptot [W] 1 Power dissipation 75 60 50 40 25 20 0 0 0 25 50 75 100 125 150 175 0 25 50 75 TC [°C] 100 125 175 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 10 limited by on-state resistance 1 µs 10 µs 102 1 ZthJC [K/W] 100 µs ID [A] 150 101 1 ms 10 ms 0.5 0.2 0.1 0.1 0.05 DC 100 0.02 0.01 single pulse 10-1 100 101 102 0 0 0 0 0 1 10-5 10-4 10-3 10-2 10-1 100 tp [s] VDS [V] Rev. 2.7 0.01 10-6 0 10-1 page 4 2012-04-04 BSC047N08NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 160 20 10 V 4.5 V 6V 5V 15 5.5 V RDS(on) [mΩ] ID [A] 120 80 10 5.5 V 5V 6V 40 5 10 V 4.5 V 0 0 0 1 2 3 0 20 VDS [V] 40 60 80 100 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 160 120 110 140 100 120 90 80 100 gfs [S] ID [A] 70 60 80 50 60 40 40 30 150 °C 20 25 °C 20 10 0 0 0 1 2 3 4 5 6 VGS [V] Rev. 2.7 0 40 80 120 160 ID [A] page 5 2012-04-04 BSC047N08NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 10 4 8 3 900 µA VGS(th) [V] RDS(on) [mΩ] 90 µA 6 max typ 4 2 1 2 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 Ciss 103 25 °C Coss 150 °C 100 IF [A] C [pF] 150°C, max 102 25°C, max Crss 10 101 100 1 0 20 40 60 80 VDS [V] Rev. 2.7 0.0 0.5 1.0 1.5 2.0 VSD [V] page 6 2012-04-04 BSC047N08NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=25 A pulsed parameter: T j(start) parameter: V DD 12 100 40 V 10 VGS [V] IAV [A] 125 °C 16 V 8 25 °C 100 °C 10 64 V 6 4 2 1 0 0.1 1 10 100 0 1000 10 tAV [µs] 20 30 40 50 60 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 100 V GS Qg 90 VBR(DSS) [V] 80 70 V g s(th) 60 50 Q g (th) Q sw Q gs 40 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.7 page 7 2012-04-04 BSC047N08NS3 G PG-TDSON-8 Rev. 2.7 page 8 2012-04-04 BSC047N08NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.7 page 9 2012-04-04