Silicon Tuning Diode MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 These devices are designed in the popular PLASTIC PACKAGE for high volumerequirements of FM Radio and TV tuning and AFC, general frequency control andtuning applications.They provide solid–state reliability in replacement of mechanical tuning methods. Also available in Surface Mount Package up to 33pF. • High Q • Controlled and Uniform Tuning Ratio • Standard Capacitance Tolerance —10% • Complete Typical Design Curves 6.8-100p 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES 1 ANODE 3 CATHODE 3 1 2 CASE 318–08, STYLE 8 SOT– 23 (TO–236AB) MAXIMUM RATINGS(EACH DIODE) Rating Reverse Voltage Forward Current Device Dissipation @T A = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ T stg M V 2 1 X X MMBV21XXLT1 Unit 30 Vdc 200 mAdc 280 225 mW 2.8 1.8 mW/°C +150 °C –55 to +150 °C DEVICE MARKING MMBV2101LT1=M4G MMBV2103LT1=4H MMBV2105LT1=4U MMBV2107LT1=4W MMBV2108LT1=4X MMBV2109LT1=4J ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR=1.0µAdc) Reverse Voltage Leakage Current (VR=25Vdc,TA=25°C) Diode Capacitance Temperature Coefficient (VR=4.0Vdc,f=1.0MHz) Symbol Min Typ Max Unit V (BR)R 30 — — Vdc IR — — 0.1 µAdc T CC — 280 — ppm/°C I6–1/3 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 C V Device R MMBV2101LT1/MV2101 MMBV2103LT1 MV2104 MMBV2105LT1/MV2105 MMBV2107LT1 MMBV2108LT1/MV2108 MMBV2109LT1/MV2109 MV2111 MV2115 , Diode Capacitance = 4.0 Vdc, f = 1.0 MHz pF T Min 6.1 9.0 10.8 13.5 19.8 24.3 29.7 42.3 90 Nom 6.8 10 12 15 22 27 33 47 100 Max 7.5 11 13.2 16.5 24.2 29.7 36.3 51.7 110 Q, Figure of Merit V R = 4.0 Vdc, f = 50 MHz Typ 450 400 400 400 350 300 200 150 100 T R, Tuning Ratio C 2 /C 30 f = 1.0 MHz Min 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.6 Typ 2.7 2.9 2.9 2.9 2.9 3.0 3.0 3.0 3.0 Max 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.3 MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1” suffix when ordering any of these devices in bulk. PARAMETER TEST METHODS 1. C T , DIODE CAPACITANCE (C T = C C + C J ). C T is measured at 1.0 MHz using a ca-pacitance bridge (Boonton Electronics Model 75A or equivalent). 2. T R, TUNING RATIO T R is the ratio of C T measured at 2.0 Vdc divided by C T measured at 30 Vdc. 4.T CC,DIODE CAPACITANCE TEMPERATURE COEFFICIENT~ ~ T CC is guaranteed by comparing CT at V R=4.0Vdc,f=1.0MHz,T A= – 65°C with CT at V R=4.0Vdc, f=1.0MHz,T A= + 85°C in the following equation,which defines TC C: C T(+85°C) – C T(–65°C ) 106 . TC C = 85+65 C T(25°C) 3. Q, FIGURE OF MERIT Q is calculated by taking the G and C readings of an ad-mittance bridge at the specified frequency and substitut-ing in the following equations: Q= 2πfC G (Booton Electronics Model 33As8 or equivalent).Use Lead Length 1/16”. I6–2/3 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 TYPICAL DEVICE CHARACTERISTICS 1000 T A = 25°C f = 1.0 MHz C T , DIODE CAPACITANCE (pF) 500 MV2115 200 100 MMBV2109LT1/MV2109 50 MMBV2105LT1/MV2105 20 MMBV2101LT1/MV2101 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 V R , REVERSE VOLTAGE (VOLTS) 100 50 1.040 V R = 2.0Vdc 1.030 I R , REVERSE CURRENT (nA) NORMALIZED DIODE CAPACITANCE Figure 1. Diode Capacitance versus Reverse Voltage 1.020 V R = 4.0Vdc 1.010 1.000 V R = 30Vdc 0.990 NORMALIZED TO C T 0.980 at T A = 25°C V R = (CURVE) 0.970 T A = 125°C 20 10 5.0 2.0 T A = 75°C 1.0 .50 .20 T A = 25°C .10 .05 .02 .01 0.960 –75 –50 –25 0 +25 +50 +75 +100 0 +125 5.0 10 15 20 25 30 T J , JUNCTION TEMPERATURE (°C) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Normalized Diode Capacitance versus Junction Temperature Figure 3. Reverse Current versus Reverse Bias Voltage 5000 5000 MMBV2101LT1/MV2101 3000 2000 3000 2000 Q, FIGURE OF MERIT Q, FIGURE OF MERIT MMBV2109LT1/MV2109 1000 500 300 200 MV2115 100 50 T A = 25°C f = 50 MHz 30 20 10 1000 500 300 200 MMBV2101LT1/MV2101 100 MV2115 50 MMBV2109LT1/MV2109 T A = 25°C 30 20 V R = 4.0 Vdc 10 1.0 2.0 3.0 5.0 7.0 10 20 30 10 20 30 50 70 100 200 V R , REVERSE VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 4. Figure of Merit versus Figure 5. Figure of Merit versus Reverse Voltage Frequency 300 I6–3/3