HSM88AS Silicon Schottky Barrier Diode for Balanced Mixer REJ03G0135-0600Z (Previous: ADE-208-046E) Rev.6.00 Nov.06.2003 Features • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSM88AS C1 MPAK Pin Arrangement 3 2 1 (Top View) Rev.6.00, Nov.06.2003, page 1 of 4 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2 HSM88AS Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR 10 V 1 Average rectified current IO * 15 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Per one device Electrical Characteristics *1 (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF1 0.35 — 0.42 V IF = 1 mA VF2 0.50 — 0.58 Reverse current IR1 — — 0.2 IR2 — — 10 Capacitance C — — Capacitance deviation ∆C — Forward voltage deviation ∆VF — ESD-Capability * 2 µA VR = 2 V 0.85 pF VR = 0 V, f = 1 MHz — 0.10 pF VR = 0 V, f = 1 MHz — — 10 mV IF = 10 mA 30 — — V C = 200 pF, R = 0 Ω , Both forward and reverse direction 1 pulse. Notes: 1. Per one device 2. Failure criterion ; IR ≥ 0.4 µA at VR = 2 V Rev.6.00, Nov.06.2003, page 2 of 4 IF = 10 mA VR = 10 V HSM88AS Main Characteristics 10–2 10–5 10–4 Reverse current IR (A) Forward current IF (A) 10–3 10–5 10–6 10–7 10–6 10–7 10–8 10–8 10–9 0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f = 1MHz 10 Capacitance C (pF) 10–9 1.0 0.1 0.1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage Rev.6.00, Nov.06.2003, page 3 of 4 HSM88AS Package Dimensions As of January, 2003 1.9 ± 0.2 2.8 + 0.2 – 0.6 + 0.2 1.1 – 0.1 0.3 2.8 +– 0.1 0 – 0.1 (0.3) (0.95) (0.95) + 0.10 0.16 – 0.06 (0.65) 1.5 ± 0.15 0.10 3–0.4 +– 0.05 (0.65) Unit: mm Package Code JEDEC JEITA Mass (reference value) Rev.6.00, Nov.06.2003, page 4 of 4 MPAK — Conforms 0.011 g Sales Strategic Planning Div. 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