Diodes DMN100-7-F N-channel enhancement mode field effect transistor Datasheet

SPICE MODELS: DMN100
DMN100
Lead-free Green
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
·
·
·
·
·
·
SC-59
Extremely Low On-Resistance:
170mW @ VGS = 4.5V
A
High Drain Current: 1.1A
D
Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
TOP VIEW
Lead Free By Design/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
G
ESD Protected Gate
C
S
D
E
"Green" Device (Note 3)
B
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
·
·
·
Terminal Connections: See Diagram
A
0.30
0.50
B
1.40
1.80
C
2.50
3.00
D
0.85
1.05
E
0.30
0.70
1.70
2.10
H
H
2.70
3.10
J
Case Material - Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Max
G
M
K
Case: SC-59
Min
G
Mechanical Data
·
·
Dim
L
Drain
J
¾
0.10
K
1.00
1.40
L
0.55
0.70
M
0.10
0.35
All Dimensions in mm
Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Gate
Marking: See Last Page
Ordering & Date Code Information: See Last Page
Weight: 0.008 grams (approximate)
Gate
Protection
Diode
Source
ESD protected
EQUIVALENT CIRCUIT
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current
Continuous
Pulsed
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
Symbol
DMN100
Units
VDSS
30
V
VGSS
±20
V
ID
1.1
4.0
A
Pd
500
mW
RqJA
250
K/W
Tj, TSTG
-55 to +150
°C
1. Pulse width £ 300ms, duty cycle £ 2%.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30049 Rev. 6 - 2
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DMN100
ã Diodes Incorporated
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
BVDSS
30
Test Condition
¾
¾
V
VGS = 0V, ID = 250mA
µA
VDS = 24V, VGS = 0V
VGS = ± 12V, VDS = 0V
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ Tj = 25°C
@ Tj = 125°C
Gate-Body Leakage
IDSS
¾
¾
1.0
10
IGSS
¾
¾
± 100
nA
VGS(th)
1.0
¾
3.0
V
VDS = 10V, ID =1.0mA
W
VGS = 4.5V, ID = 0.5A
VGS = 10V, ID = 1.0A
VDS = 10V, ID =0.5A
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
RDS (ON)
¾
¾
0.170
0.240
gFS
1.3
2.4
¾
S
Input Capacitance
Ciss
¾
150
¾
pF
Output Capacitance
Coss
¾
90
¾
pF
Reverse Transfer Capacitance
Crss
¾
30
¾
pF
Total Gate Charge
Qg
¾
5.5
¾
nC
Gate-to-Source Charge
Qgs
¾
0.8
¾
nC
Gate-to-Drain Charge
Qgd
¾
1.3
¾
nC
Turn-On Delay Time
tD(ON)
¾
10
¾
ns
Turn-Off Delay Time
tD(OFF)
¾
25
¾
ns
Turn-On Rise Time
tr
¾
15
¾
ns
Turn-Off Fall Time
tf
¾
45
¾
ns
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = 10V, VGS = 0V
f = 1.0MHz
VDS = 24V, ID = 1.0A,
VGS = 10V
SWITCHING CHARACTERISTICS
VDD = 10V, ID = 0.5A,
VGS = 5.0V, RGEN = 50W
SOURCE- DRAIN RATINGS (BODY DIODE)
IS
¾
¾
0.54
A
Pulse Source Current
ISM
¾
¾
4.0
A
Forward Voltage
VSD
¾
¾
1.2
V
IF = 1.0A, VGS = 0V
trr
¾
35
¾
ns
IF = 1.0A, di/dt = 50A/ms
Continuous Source Current
Reverse Recovery Time
¾
1. Pulse width £ 300ms, duty cycle £ 2%.
1.0
4.0
VGS = 10V
5.0V
4.5V
4.0V
3.5V
3.5
3.0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
Notes:
ID, DRAIN CURRENT (A)
¾
2.5
3.0V
2.0
1.5
1.0
2.5V
0.5
VGS = 4.5V
0.1
VGS = 10V
0.01
0
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS30049 Rev. 6 - 2
0
1
2
4
3
ID, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs Drain Current
2 of 3
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DMN100
4.0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.30
0.25
0.20
VGS = 4.5V, RDS @ 0.5A
0.15
0.10
VGS = 10V, RDS @ 1.0A
0.05
0
-50
VGS = 10V
TA = 25° C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
50
100
150
0
Tj, JUNCTION TEMPERATURE (° C)
Fig. 3 On-Resistance vs Junction Temperature
Ordering Information
Notes:
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs Gate-Source Voltage
(Note 4)
Device
Packaging
Shipping
DMN100-7-F
SC-59
3000/Tape & Reel
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
M11
YM
Marking Information
M11 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
2006
2007
2008
2009
Code
T
U
V
W
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
DS30049 Rev. 6 - 2
3 of 3
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DMN100
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