Renesas NP90N03VLG Mos field effect transistor Datasheet

Preliminary Data Sheet
NP90N03VLG
R07DS0129EJ0100
Rev.1.00
Sep 24, 2010
MOS FIELD EFFECT TRANSISTOR
Description
The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A)
⎯ RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
• Low input capacitance
⎯ Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V)
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP90N03VLG-E1-AY∗1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
NP90N03VLG-E2-AY∗1
Package
TO-252, Taping (E1 type)
TO-252, Taping (E2 type)
∗
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current ∗2
Repetitive Avalanche Energy ∗2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
30
±20
±90
±360
105
1.2
175
−55 to +175
41
168
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗
2. Tch(peak) ≤ 150°C, RG = 25 Ω
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Rth(ch-C)
Rth(ch-A)
1.43
125
°C/W
°C/W
Page 1 of 6
NP90N03VLG
Chapter Title
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance ∗1
Symbol
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)1
Drain to Source On-state
Resistance ∗1
Min
Typ
1.4
30
1.8
67
2.5
3.8
5000
600
420
17
13
73
9
90
13
26
0.9
42
35
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ∗1
Reverse Recovery Time
Reverse Recovery Charge
Max
1
±10
2.5
Unit
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
3.2
8.0
7500
900
760
34
33
146
23
135
1.5
Test Conditions
VDS = 30 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μ A
VDS = 5 V, ID = 45 A
VGS = 10 V, ID = 45 A
VGS = 4.5 V, ID = 35 A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 15 V, ID = 45 A,
VGS = 10 V,
RG = 0 Ω
VDD = 24 V,
VGS = 10 V,
ID = 90 A
IF = 90 A, VGS = 0 V
IF = 90 A, VGS = 0 V,
di/dt = 100 A/μ s
Note: ∗1. Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
VDS
90%
BVDSS
IAS
90%
VDS
VGS
0
VDS
10%
0
10%
Wave Form
VDS
ID
τ
VDD
Starting Tch
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
tr
ton
td(off)
tf
toff
TEST CIRCUIT 3 GATE CHARGE
PG.
D.U.T.
IG = 2 mA
RL
50 Ω
VDD
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Page 2 of 6
NP90N03VLG
Chapter Title
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
TOTAL POWER DISSIPATION vs.
OPERATING AREA
CASE TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
100
80
60
40
20
0
0
0
25
50
75
100
125
150
175
0
25
TC - Case Temperature - °C
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
PW
=1
i
00
ID(DC)
10
μs
w
Po
D
er
ip
i ss
io
at
1
d
it e
im
nL
ID - Drain Current - A
S(
RD
G
(V
100
ID(pul se)
d
it e
Lim V )
i0
=1
S
)
on
TC = 25°C
Single Pulse
1i m s
i
1i 0 m s
i
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(t) - Transient Thermal Resistance - °C/W
1000
Rt h(ch- A) = 125°C/W
100
10
Rt h(ch- C) = 1.43°C/W
1
0.1
Single Pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Page 3 of 6
NP90N03VLG
Chapter Title
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
1000
Pulsed
4.5 V
200
Tch = -55°C
-25°C
25°C
75°C
125°C
150°C
175°C
100
V GS = 10 V
300
ID - Drain Current - A
ID - Drain Current - A
400
100
10
1
0.1
0.01
V DS = 10 V
Pulsed
0.001
0
0.0001
0
0.5
1
1.5
2
0
3
4
5
GATE TO SOURCE THRESHOLD VOLTAGE
FORWARD TRANSFER ADMITTANCE vs. DRAIN
vs. CHANNEL TEMPERATURE
CURRENT
3
V DS = V GS
2
ID = 10 mA
1 mA
1
250 μA
0
-75
-25
25
75
125
100
Tch = -55°C
-25°C
25°C
75°C
125°C
150°C
175°C
10
V DS = 5 V
Pulsed
1
175
0.1
Tch - Channel Temperature - °C
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
GATE TO SOURCE VOLTAGE
6
Pulsed
5
V GS = 4.5
4
3
10 V
2
1
0
1
10
100
ID - Drain Current - A
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
2
VGS - Gate to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(th) - Gate to Source Threshold Voltage - V
VDS - Drain to Source Voltage - V
1
6
5
4
3
2
1
ID = 45 A
Pulsed
0
0
10
20
VGS - Gate to Source Voltage - V
Page 4 of 6
NP90N03VLG
Chapter Title
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
ID = 45 A
Pulsed
5
V GS = 4.5 V
4
10 V
3
2
1
0
-75
-25
25
75
125
10000
Ciss
1000
Coss
Crss
100
0.01
175
V DD = 15 V
V GS = 10 V
RG = 0 Ω
td(off)
100
tf
10
td(on)
tr
10
10
V DD = 24 V
15 V
6V
40
30
8
V GS
10
4
10
2
V DS
ID = 90 A
100
0
ID - Drain Current - A
40
60
80
0
100
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
trr - Reverse Recovery Time - ns
100
0V
V GS = 10 V
10
1
0.1
0.01
0.001
0.0
20
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
6
20
0
1
100
50
1
0.1
IF - Diode Forward Current - A
1
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VDS - Drain to Source Voltage - V
1000
0.1
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
V GS = 0 V
f = 1 MHz
Pulsed
0.2
0.4
0.6
0.8
1.0
1.2
VF(S-D) - Source to Drain Voltage - V
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
1.4
di/dt = 100 A/μs
V GS = 0 V
10
0.1
1
10
100
IF - Drain Current - A
Page 5 of 6
VGS - Gate to Source Voltage - V
6
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
CHANNEL TEMPERATURE
NP90N03VLG
Chapter Title
Package Drawings (Unit: mm)
TO-252 (MP-3ZP) (Mass: 0.27 g TYP.)
2.3±0.1
1.0 TYP.
6.5±0.2
5.1 TYP.
4.3 MIN.
0.5±0.1
No Plating
1.13
2
3
0.8
1
1.14 MAX.
0.51 MIN.
4.0 MIN.
6.1±0.2
10.4 MAX. (9.8 TYP.)
4
No Plating
0 to 0.25
0.5±0.1
0.76±0.12
2.3
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.0
Equivalent Circuit
Drain
Body
Diode
Gate
Gate
Protection
Diode
Remark
Source
The diode connected between the gate and source of the transistor serves as a protector against
ESD. When this device actually used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Page 6 of 6
Revision History
NP90N03VLG
Rev.
Date
Page
1.00
Sep 24, 2010
−
Description
Summary
First Edition Issued
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