IRF3704ZS D2Pak IRF3704ZS Applications l High Frequency Synchronous Buck Converters for Computer Processor Power Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max 7.9m: 20V Qg 8.7nC Absolute Maximum Ratings Max. Units 20 V Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ± 20 67 A 47 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation 57 PD @TC = 100°C Maximum Power Dissipation 28 TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C c Mounting Torque, 6-32 or M3 screw Thermal Resistance f Parameter Junction-to-Case i RθCS Case-to-Sink, Flat Greased Surface RθJA Junction-to-Ambient RθJA Junction-to-Ambient (PCB Mount) 2014-8-13 fi 260 W 0.38 -55 to + 175 Soldering Temperature, for 10 seconds RθJC h h f gi 1 W/°C °C 300 (1.6mm from case) y y 10 lbf in (1.1N m) Typ. Max. Units ––– 2.65 °C/W 0.50 ––– ––– 62 ––– 40 www.kersemi.com IRF3704ZS Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units Parameter BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.014 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 6.5 7.9 ––– 9.1 11.1 V V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 21A VGS = 4.5V, ID = 17A VGS(th) Gate Threshold Voltage 1.65 2.1 2.55 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -5.6 ––– mV/°C IDSS Drain-to-Source Leakage Current µA IGSS gfs Qg ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Forward Transconductance 48 ––– ––– Total Gate Charge ––– 8.7 13 Conditions VGS = 0V, ID = 250µA e e VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V S VDS = 10V, ID = 17A nC VGS = 4.5V Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.9 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.1 ––– Qgd Gate-to-Drain Charge ––– 2.3 ––– ID = 17A Qgodr ––– 2.4 ––– See Fig. 16 Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– 3.4 ––– VDS = 10V Qoss Output Charge ––– 5.6 ––– td(on) Turn-On Delay Time ––– 8.9 ––– VDD = 10V, VGS = 4.5V tr Rise Time ––– 38 ––– ID = 17A td(off) Turn-Off Delay Time ––– 11 ––– tf Fall Time ––– 4.2 ––– Ciss Input Capacitance ––– 1220 ––– Coss Output Capacitance ––– 390 ––– Crss Reverse Transfer Capacitance ––– 190 ––– nC VDS = 10V, VGS = 0V e ns Clamped Inductive Load pF VDS = 10V VGS = 0V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy c Typ. ––– d c Max. 36 Units mJ ––– 17 A ––– 5.7 mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– ISM (Body Diode) Pulsed Source Current ––– ––– VSD (Body Diode) Diode Forward Voltage ––– trr Reverse Recovery Time ––– Qrr Reverse Recovery Charge ––– 2014-8-13 67 h 2 D 260 showing the integral reverse ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 17A, VGS = 0V 11 17 ns 2.3 3.5 nC A c Conditions MOSFET symbol G S e TJ = 25°C, IF = 17A, VDD = 10V di/dt = 100A/µs e www.kersemi.com IRF3704ZS 1000 1000 VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP TOP 3.0V 60µs PULSE WIDTH Tj = 25°C 100 3.0V 10 60µs PULSE WIDTH Tj = 175°C 1 1 0.1 1 0.1 10 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 T J = 25°C T J = 175°C 100.0 VDS = 10V 60µs PULSE WIDTH 10.0 3.0 4.0 5.0 6.0 7.0 1.5 1.0 0.5 8.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics 2014-8-13 ID = 42A VGS = 10V (Normalized) RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (Α) 1000.0 Fig 4. Normalized On-Resistance vs. Temperature 3 www.kersemi.com IRF3704ZS 12 10000 f = 1 MHZ VGS = 0V, C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 17A C, Capacitance (pF) C oss = C ds + C gd Ciss 1000 Coss Crss VDS= 16V VDS= 10V 10 8 6 4 2 0 100 1 10 0 100 5 10 15 20 25 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000.0 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100.0 100 T J = 175°C 10.0 T J = 25°C 1.0 100µsec 10 VGS = 0V 1 0.1 0.0 0.5 1.0 1.5 2.0 0 10msec 1 10 100 VDS , Drain-toSource Voltage (V) VSD, Source-toDrain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 2014-8-13 1msec Tc = 25°C Tj = 175°C Single Pulse 4 www.kersemi.com IRF3704ZS 70 2.6 VGS(th) Gate threshold Voltage (V) LIMITED BY PACKAGE ID , Drain Current (A) 60 50 40 30 20 10 0 25 50 75 100 125 150 2.2 ID = 250µA 1.8 1.4 1.0 0.6 175 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 τJ 0.02 0.01 0.01 R1 R1 τJ τ1 τ1 R2 R2 τ2 τ2 R3 R3 τ3 τC τ τ3 Ci= τi/Ri Ci= τi/Ri SINGLE PULSE ( THERMAL RESPONSE ) Ri (°C/W) τi (sec) 0.920 0.000139 0.194 0.000602 0.538 0.001567 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 2014-8-13 5 www.kersemi.com IRF3704ZS 15V D.U.T RG + V - DD IAS VGS 20V EAS, Single Pulse Avalanche Energy (mJ) DRIVER L VDS 140 A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp ID 5.6A 8.5A BOTTOM 17A TOP 120 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS LD VDS Fig 12b. Unclamped Inductive Waveforms + VDD D.U.T Current Regulator Same Type as D.U.T. VGS Pulse Width < 1µs Duty Factor < 0.1% 50KΩ 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS VDS 90% VGS 3mA 10% IG VGS ID Current Sampling Resistors td(on) Fig 13. Gate Charge Test Circuit tr td(off) tf Fig 14b. Switching Time Waveforms 2014-8-13 6 www.kersemi.com IRF3704ZS D.U.T Driver Gate Drive + + P.W. - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer D= Period VDD Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage + - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform 2014-8-13 7 www.kersemi.com IRF3704ZS TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 3X LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C For GB Production EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INTERNATIONAL RECT IFIER LOGO LOT CODE 2014-8-13 8 PART NUMBER DAT E CODE www.kersemi.com IRF3704ZS D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L AS S EMBLY LOT CODE For GB Production T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO LOT CODE 2014-8-13 9 PART NUMBER F530S DAT E CODE www.kersemi.com IRF3704ZS TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INT ERNAT IONAL RECTIFIER LOGO AS SEMBLY LOT CODE 2014-8-13 10 PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C www.kersemi.com IRF3704ZS D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.25mH, RG = 25Ω, IAS = 17A. Pulse width ≤ 400µs; duty cycle ≤ 2%. This is only applied to TO-220AB pakcage. 2014-8-13 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 This is applied to D2Pak, when mounted on 1" square PCB (FR4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42A. Rθ is measured at TJ approximately 90°C 11 www.kersemi.com