Fairchild MMBT4403 Pnp general purpose amplifier Datasheet

2N4403 / MMBT4403
2N4403
MMBT4403
C
E
C
B
TO-92
B
SOT-23
E
Mark: 2T
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
600
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max
Units
2N4403
625
5.0
83.3
*MMBT4403
350
2.8
200
357
mW
mW/°C
°C/W
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
 2001 Fairchild Semiconductor Corporation
2N4403/MMBT4403, Rev. C
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
IC = 1.0 mA, IB = 0
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IC = 0.1 mA, IE = 0
40
V
IE = 0.1 A, IC = 0
5.0
IBEX
Base Cutoff Current
VCE = 35 V, VEB = 0.4 V
0.1
µA
ICEX
Collector Cutoff Current
VCE = 35 V, VBE = 0.4 V
0.1
µA
V
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain
Collector-Emitter Saturation
Voltage*
Base-Emitter Saturation Voltage
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 150 mA, VCE = 2.0 V*
IC = 500 mA, VCE = 2.0 V*
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA*
IC = 500 mA, IB = 50 mA
30
60
100
100
20
0.75
300
0.4
0.75
0.95
1.3
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Ccb
Collector-Base Capacitance
Ceb
Emitter-Base Capacitance
hie
Input Impedance
hre
Voltage Feedback Ratio
hfe
Small-Signal Current Gain
hoe
Output Admittance
IC = 20 mA, VCE = 10 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 140 kHz
VBE = 0.5 V, IC = 0,
f = 140 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
200
MHz
8.5
pF
30
pF
1.5
15
kΩ
0.1
8.0
x 10
60
500
1.0
100
-4
µmhos
SWITCHING CHARACTERISTICS
td
Delay Time
VCC = 30 V, IC = 150 mA,
15
ns
tr
Rise Time
IB1 = 15 mA
20
ns
ts
Storage Time
VCC = 30 V, IC = 150 mA
225
ns
tf
Fall Time
IB1 = IB2 = 15 mA
30
ns
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
2N4403 / MMBT4403
PNP General Purpose Amplifier
(continued)
500
VCE = 5V
400
125 °C
300
200
100
0
0.1
25 °C
- 40 °C
0.3
1
3
10
30
100
I C - COLLECTOR CURRENT (mA)
300
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40 °C
0.8
25 °C
0.6
125 °C
0.4
β = 10
0.2
0
1
10
100
I C - COLLECTOR CURRENT (mA)
500
VCESAT - COLLECTOR EMITTE R VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
β = 10
0.4
0.3
25 °C
0.2
125 °C
0.1
- 40 °C
0
V BE( ON)- BAS E EMITTER ON VOLTAGE (V)
V BESAT - BASE EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
1
500
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
- 40 °C
25 °C
125°C
VCE = 5V
0.2
0
0.1
1
10
I C - COLLECTOR CURRE NT (mA)
25
Input and Output Capacitance
vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
20
100
V CB = 35V
CAPACITANCE (pF)
I CBO - COLLE CTOR CURRENT (nA)
10
100
I C - COLLECTOR CURRE NT (mA)
10
1
0.1
0.01
25
50
75
100
T A - AMBIE NT TEMP ERATURE (° C)
125
16
12
C ib
8
4
0
0.1
C ob
1
10
REVERSE BIAS VOLTAGE (V)
50
2N4403 / MMBT4403
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Switching Times
vs Collector Current
250
I B1 = I B2 =
Turn On and Turn Off Times
vs Collector Current
500
Ic
I B1 = I B2 =
10
400
200
V cc = 15 V
ts
150
TIME (nS)
TIME (nS)
V cc = 15 V
100
tr
300
200
tf
t off
100
50
t on
td
0
10
100
I C - COLLECTOR CURRENT (mA)
0
10
1000
100
I C - COLLECTOR CURRENT (mA)
1
50
PD - POWER DISSIPATION (W)
I B1 - TURN 0N BASE CURRENT (mA)
1000
Power Dissipation vs
Ambient Temperature
Rise Time vs Collector
and Turn On Base Currents
20
10
Ic
10
SOT-223
0.75
t r = 15 V
5
30 ns
TO-92
0.5
SOT-23
0.25
2
60 ns
1
10
100
I C - COLLECTOR CURRENT (mA)
500
0
0
25
50
75
100
TEMPERATURE ( oC)
125
150
2N4403 / MMBT4403
PNP General Purpose Amplifier
(continued)
hoe
h re
2
h fe
1
0.5
h ie
0.2
V CE = -10 V
T A = 25 oC
0.1_
1
_
_
_
_
2
5
10
20
I C - COLLECTOR CURRENT (mA)
_
50
CHAR. RELATIVE TO VALUES AT VCE = -10V
Common Emitter Characteristics
5
CHAR. RELATIVE TO VALUES AT TA = 25oC
CHAR. RELATIVE TO VALUES AT I C= -10mA
Typical Common Emitter Characteristics
(f = 1.0kHz)
Common Emitter Characteristics
1.3
1.2
h re and hoe
1.1
1
h ie
0.9
I C = -10mA
T A = 25oC
h fe
0.8
-4
-8
-12
-16
V CE - COLLECTOR VOLTAGE (V)
Common Emitter Characteristics
1.5
I C = -10mA
1.4 V = -10 V
CE
1.3
1.2
h fe
h ie
h re
hoe
1.1 hoe
1
0.9
0.8
h re
h ie
0.7
0.6
0.5
-40
h re
h ie
h fe
hoe
h fe
-20
0
20
40
60
80
T A - AMBIENT TEMPERATURE ( o C)
100
-20
2N4403 / MMBT4403
PNP General Purpose Amplifier
(continued)
Test Circuits
- 30 V
200 Ω
Ω
1.0 KΩ
0
- 16 V
50 Ω
≤ 200ns
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
1.5 V
1 KΩ
Ω
NOTE: BVEBO = 5.0 V
- 6.0 V
37 Ω
Ω
1.0 KΩ
0
- 30 V
50 Ω
≤ 200ns
FIGURE 2: Saturated Turn-Off Switching Time Test Circuit
2N4403 / MMBT4403
PNP General Purpose Amplifier
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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