2N4403 / MMBT4403 2N4403 MMBT4403 C E C B TO-92 B SOT-23 E Mark: 2T PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 600 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max Units 2N4403 625 5.0 83.3 *MMBT4403 350 2.8 200 357 mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N4403/MMBT4403, Rev. C (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO IC = 1.0 mA, IB = 0 V(BR)CBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage 40 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 0.1 mA, IE = 0 40 V IE = 0.1 A, IC = 0 5.0 IBEX Base Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 µA ICEX Collector Cutoff Current VCE = 35 V, VBE = 0.4 V 0.1 µA V ON CHARACTERISTICS hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 2.0 V* IC = 500 mA, VCE = 2.0 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA* IC = 500 mA, IB = 50 mA 30 60 100 100 20 0.75 300 0.4 0.75 0.95 1.3 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Ccb Collector-Base Capacitance Ceb Emitter-Base Capacitance hie Input Impedance hre Voltage Feedback Ratio hfe Small-Signal Current Gain hoe Output Admittance IC = 20 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 140 kHz VBE = 0.5 V, IC = 0, f = 140 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 200 MHz 8.5 pF 30 pF 1.5 15 kΩ 0.1 8.0 x 10 60 500 1.0 100 -4 µmhos SWITCHING CHARACTERISTICS td Delay Time VCC = 30 V, IC = 150 mA, 15 ns tr Rise Time IB1 = 15 mA 20 ns ts Storage Time VCC = 30 V, IC = 150 mA 225 ns tf Fall Time IB1 = IB2 = 15 mA 30 ns *Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0% 2N4403 / MMBT4403 PNP General Purpose Amplifier (continued) 500 VCE = 5V 400 125 °C 300 200 100 0 0.1 25 °C - 40 °C 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 Base-Emitter Saturation Voltage vs Collector Current 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 β = 10 0.2 0 1 10 100 I C - COLLECTOR CURRENT (mA) 500 VCESAT - COLLECTOR EMITTE R VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.5 β = 10 0.4 0.3 25 °C 0.2 125 °C 0.1 - 40 °C 0 V BE( ON)- BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 1 500 Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 - 40 °C 25 °C 125°C VCE = 5V 0.2 0 0.1 1 10 I C - COLLECTOR CURRE NT (mA) 25 Input and Output Capacitance vs Reverse Bias Voltage Collector-Cutoff Current vs Ambient Temperature 20 100 V CB = 35V CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (nA) 10 100 I C - COLLECTOR CURRE NT (mA) 10 1 0.1 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE (° C) 125 16 12 C ib 8 4 0 0.1 C ob 1 10 REVERSE BIAS VOLTAGE (V) 50 2N4403 / MMBT4403 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Switching Times vs Collector Current 250 I B1 = I B2 = Turn On and Turn Off Times vs Collector Current 500 Ic I B1 = I B2 = 10 400 200 V cc = 15 V ts 150 TIME (nS) TIME (nS) V cc = 15 V 100 tr 300 200 tf t off 100 50 t on td 0 10 100 I C - COLLECTOR CURRENT (mA) 0 10 1000 100 I C - COLLECTOR CURRENT (mA) 1 50 PD - POWER DISSIPATION (W) I B1 - TURN 0N BASE CURRENT (mA) 1000 Power Dissipation vs Ambient Temperature Rise Time vs Collector and Turn On Base Currents 20 10 Ic 10 SOT-223 0.75 t r = 15 V 5 30 ns TO-92 0.5 SOT-23 0.25 2 60 ns 1 10 100 I C - COLLECTOR CURRENT (mA) 500 0 0 25 50 75 100 TEMPERATURE ( oC) 125 150 2N4403 / MMBT4403 PNP General Purpose Amplifier (continued) hoe h re 2 h fe 1 0.5 h ie 0.2 V CE = -10 V T A = 25 oC 0.1_ 1 _ _ _ _ 2 5 10 20 I C - COLLECTOR CURRENT (mA) _ 50 CHAR. RELATIVE TO VALUES AT VCE = -10V Common Emitter Characteristics 5 CHAR. RELATIVE TO VALUES AT TA = 25oC CHAR. RELATIVE TO VALUES AT I C= -10mA Typical Common Emitter Characteristics (f = 1.0kHz) Common Emitter Characteristics 1.3 1.2 h re and hoe 1.1 1 h ie 0.9 I C = -10mA T A = 25oC h fe 0.8 -4 -8 -12 -16 V CE - COLLECTOR VOLTAGE (V) Common Emitter Characteristics 1.5 I C = -10mA 1.4 V = -10 V CE 1.3 1.2 h fe h ie h re hoe 1.1 hoe 1 0.9 0.8 h re h ie 0.7 0.6 0.5 -40 h re h ie h fe hoe h fe -20 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 -20 2N4403 / MMBT4403 PNP General Purpose Amplifier (continued) Test Circuits - 30 V 200 Ω Ω 1.0 KΩ 0 - 16 V 50 Ω ≤ 200ns FIGURE 1: Saturated Turn-On Switching Time Test Circuit 1.5 V 1 KΩ Ω NOTE: BVEBO = 5.0 V - 6.0 V 37 Ω Ω 1.0 KΩ 0 - 30 V 50 Ω ≤ 200ns FIGURE 2: Saturated Turn-Off Switching Time Test Circuit 2N4403 / MMBT4403 PNP General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4