BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 25 mA; in a class-AB production test circuit. Mode of operation pulsed RF f VDS PL Gp ηD tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) 2.7 to 3.1 32 6 15 33 20 10 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 µs and a δ of 10 %: u Output power = 6 W u Power gain = 15 dB u Efficiency = 33 % n Integrated ESD protection n High flexibility with respect to pulse formats n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (2.7 GHz to 3.1 GHz) n Internally matched for ease of use n Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3 Applications n S-Band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency range BLS6G2731-6G NXP Semiconductors LDMOS S-Band radar power transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 [1] 2 3 sym112 2 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description BLS6G2731-6G - Version eared flanged ceramic package; 2 mounting holes; 2 leads SOT975C 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 60 V VGS gate-source voltage −0.5 +13 V ID drain current - 3.5 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL = 6 W BLS6G2731-6G_1 Product data sheet Typ Unit tp = 100 µs; δ = 10 % 1.56 K/W tp = 200 µs; δ = 10 % 1.95 K/W tp = 300 µs; δ = 10 % 2.20 K/W tp = 100 µs; δ = 20 % 2.00 K/W © NXP B.V. 2009. All rights reserved. Rev. 01 — 19 February 2009 2 of 11 BLS6G2731-6G NXP Semiconductors LDMOS S-Band radar power transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.18 mA 60 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 18 mA 1.4 1.8 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 1.4 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 2.7 - - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 0.9 A 0.81 - - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 0.63 A 328 - 1260 mΩ 7. Application information Table 7. Application information Mode of operation: pulsed RF; tp = 100 µs; δ = 10 %; RF performance at VDS = 32 V; IDq = 25 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol Parameter Conditions Min Typ Max Unit VCC supply voltage PL = 6 W - - 32 V Gp power gain PL = 6 W 14 15 - dB ηD drain efficiency PL = 6 W 30 33 - % tr rise time PL = 6 W - 20 50 ns tf fall time PL = 6 W - 10 50 ns BLS6G2731-6G_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 19 February 2009 3 of 11 BLS6G2731-6G NXP Semiconductors LDMOS S-Band radar power transistor Table 8. Typical impedance f ZS ZL GHz Ω Ω 2.7 2.44 − j17.78 3.30 − j4.14 2.8 2.99 − j16.04 4.52 − j3.72 2.9 3.94 − j14.56 5.67 − j4.67 3.0 5.44 − j13.75 4.94 − j6.39 3.1 6.89 − j14.58 3.00 − j6.56 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLS6G2731-6G is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 25 mA; PL = 6 W; tp = 100 µs; δ = 10 %. BLS6G2731-6G_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 19 February 2009 4 of 11 BLS6G2731-6G NXP Semiconductors LDMOS S-Band radar power transistor 7.2 Graphs 001aaj447 18 Gp (dB) 001aaj448 18 Gp (dB) (2) (1) 16 16 (2) 14 (1) 14 (3) (3) 12 12 0 6 12 18 0 6 12 PL (W) VDS = 32 V; IDq = 25 mA; tp = 300 µs; δ = 10 %. VDS = 32 V; IDq = 25 mA; tp = 100 µs; δ = 20 %. (1) f = 2.7 GHz (1) f = 2.7 GHz (2) f = 2.9 GHz (2) f = 2.9 GHz (3) f = 3.1 GHz (3) f = 3.1 GHz Fig 2. Power gain as a function of load power; typical values 001aaj449 70 ηD (%) 60 18 PL (W) (1) Fig 3. Power gain as a function of load power; typical values 001aaj450 70 ηD (%) 60 (1) (2) (2) 50 50 (3) (3) 40 40 30 30 20 20 10 10 0 0 0 6 12 18 0 PL (W) 12 18 PL (W) VDS = 32 V; IDq = 25 mA; tp = 300 µs; δ = 10 %. VDS = 32 V; IDq = 25 mA; tp = 100 µs; δ = 20 %. (1) f = 2.7 GHz (1) f = 2.7 GHz (2) f = 2.9 GHz (2) f = 2.9 GHz (3) f = 3.1 GHz (3) f = 3.1 GHz Fig 4. Drain efficiency as a function of load power; typical values Fig 5. Drain efficiency as a function of load power; typical values BLS6G2731-6G_1 Product data sheet 6 © NXP B.V. 2009. All rights reserved. Rev. 01 — 19 February 2009 5 of 11 BLS6G2731-6G NXP Semiconductors LDMOS S-Band radar power transistor 001aaj451 20 PL (W) PL (W) (1) (2) 16 12 001aaj452 20 (1) 16 (2) 12 (3) 8 8 4 4 0 (3) 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Pi (W) 0 VDS = 32 V; IDq = 25 mA; tp = 300 µs; δ = 10 %. 0.1 (1) f = 2.7 GHz (2) f = 2.9 GHz (2) f = 2.9 GHz (3) f = 3.1 GHz (3) f = 3.1 GHz Fig 6. Load power as a function of input power; typical values 001aaj453 0.4 0.5 0.6 0.7 Pi (W) Fig 7. Load power as a function of input power; typical values 50 Gp Gp (dB) 0.3 VDS = 32 V; IDq = 25 mA; tp = 100 µs; δ = 20 %. (1) f = 2.7 GHz 18 0.2 ηD (%) 001aaj454 18 50 Gp Gp (dB) ηD (%) ηD ηD 16 40 16 40 14 30 14 30 12 2650 2750 2850 2950 20 3050 3150 f (MHz) VDS = 32 V; IDq = 25 mA; tp = 300 µs; δ = 10 %. Fig 8. Power gain and drain efficiency as function of frequency; typical values 12 2650 2850 2950 20 3050 3150 f (MHz) VDS = 32 V; IDq = 25 mA; tp = 100 µs; δ = 20 %. Fig 9. Power gain and drain efficiency as function of frequency; typical values BLS6G2731-6G_1 Product data sheet 2750 © NXP B.V. 2009. All rights reserved. Rev. 01 — 19 February 2009 6 of 11 BLS6G2731-6G NXP Semiconductors LDMOS S-Band radar power transistor 8. Test information C7 C1 C2 C3 C4 R1 C8 C5 C9 R2 C10 L3 C6 C11 L2 L1 001aaj455 Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with εr = 6.15 and thickness = 0.64 mm. See Table 9 for list of components. Fig 10. Component layout for 2700 MHz to 3100 MHz test circuit Table 9. List of components (see Figure 10) Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with εr = 6.15 and thickness = 0.64 mm. Component Description Value C1 multilayer ceramic chip capacitor 20 nF ATC 200B or equivalent C2, C9 multilayer ceramic chip capacitor 100 pF ATC 100B or equivalent C3 multilayer ceramic chip capacitor 10 µF; 35 V AVX TAJD106K035R or equivalent C4, C8 multilayer ceramic chip capacitor 1 nF ATC 700A or equivalent C5, C10, C11 multilayer ceramic chip capacitor 20 pF ATC 100A or equivalent C6 multilayer ceramic chip capacitor 2.7 pF ATC 100A or equivalent C7 electrolytic capacitor 47 µF; 63 V R1 SMD resistor 56 Ω R2 SMD resistor 3.9 Ω L1, L2, L3 copper (Cu) strips - BLS6G2731-6G_1 Product data sheet Remarks © NXP B.V. 2009. All rights reserved. Rev. 01 — 19 February 2009 7 of 11 BLS6G2731-6G NXP Semiconductors LDMOS S-Band radar power transistor 9. Package outline Earless flanged ceramic package; 2 leads SOT975C D A F U1 D1 A c 1 L Lp E1 H U2 E 2 w1 b M A α M Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H L Lp Q U1 U2 w1 α mm 3.63 3.05 3.38 3.23 0.23 0.18 6.55 6.40 6.93 6.78 6.55 6.40 6.93 6.78 0.23 0.18 10.29 10.03 1.65 1.02 0.51 +0.05 −0.05 6.43 6.27 6.43 6.27 0.51 7° 0° 0.143 0.133 0.009 0.258 0.273 0.258 0.273 0.009 0.405 0.040 +0.002 0.253 0.253 0.065 0.020 0.120 0.127 0.007 0.252 0.267 0.252 0.267 0.007 0.395 0.020 −0.002 0.247 0.247 7° 0° inches OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 08-05-20 08-07-10 SOT975C Fig 11. Package outline SOT975C BLS6G2731-6G_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 19 February 2009 8 of 11 BLS6G2731-6G NXP Semiconductors LDMOS S-Band radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description LDMOS Laterally Diffused Metal-Oxide Semiconductor RF Radio Frequency S-Band Short wave Band SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLS6G2731-6G_1 20090219 Product data sheet - - BLS6G2731-6G_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 19 February 2009 9 of 11 BLS6G2731-6G NXP Semiconductors LDMOS S-Band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLS6G2731-6G_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 19 February 2009 10 of 11 BLS6G2731-6G NXP Semiconductors LDMOS S-Band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 19 February 2009 Document identifier: BLS6G2731-6G_1