SEMICONDUCTOR E30A27VS, E30A27VR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 FEATURES A1 D3 B1 B2 D1 D2 Average Forward Current : IO=30A. (- Type) C1 E MAXIMUM RATING (Ta=25 CHARACTERISTIC RATING UNIT DC Reverse Voltage VDC 24 V Average Forward Current IF(AV) 30 A Peak 1 Cycle Surge Current IFSM 250 (50Hz) A IRSM 50 A Tj -40 150 Tstg -40 150 Surge Current Junction Temperature Storage Temperature Range G F ) SYMBOL Non-Repetitive Reverse 1 Cycle C2 E30A27VR (+ Type) H E30A27VS T POLARITY ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC DIM A1 A2 A3 B1 B2 C1 C2 D1 MILLIMETERS _ 0.3 10.0 + _ 0.3 13.5 + _ 0.5 24.0 + _ 0.3 8.5 + _ 0.3 10.0 + _ 0.3 2.0 + _ 0.3 5.0 + _ 0.3 2.5 + DIM D2 D3 E F G H T MILLIMETERS _ 0.3 5.0 + _ 0.3 4.5 + _ 0.3 1.9 + _ 0.3 9.0 + _ 0.3 1.0 + _ 0.5 4.4 + _ 0.3 0.6 + MR ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Zener Voltage VZ IZ=10mA 24 - 30 V Peak Forward Voltage VFM IFM=100A - - 1.2 V Repetitive Peak Reverse Current IRRM VRRM=24V - - 50 A 23 - 36 mV/ Zener Voltage rZ IZ=10mA Reverse Recovery Time trr IF=0.1A, IR=0.1A - - 15 S Temperature Resistance Rth DC total junction to case - - 1.0 /W Temperature Coefficient 2002. 10. 9 Revision No : 1 1/2 I F - VF FORWARD CURRENT I F (A) 1000 100 10 1 0.7 0.8 0.9 1 1.1 FORWARD VOLTAGE V F (V) 2002. 10. 9 Revision No : 1 1.2 AVERAGE FORWARD CURRENT I F(AV) (A) E30A27VS, E30A27VR I F(AV) - Ta 40 Ta=Tc 30 20 10 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta ( C) 2/2