MMBT2907Q PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product D D1 * Features A E E1 SOT-89 b1 1 Power dissipation 2 PCM : 1.25 W (Temp.= 25 C) b e C e1 Collector current ICM L 3 O 1.B AS E 2.C OLLE C T OR : -0.6 A Symbol ３ 3.E MIT T E R Collector-base voltage V(BR)CBO : -60 V Operating & Storage junction Temperature O O Tj, Tstg : -55 C~ +150 C Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.400 1.800 0.055 0.071 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 1.500TYP e 0.167 0.060TYP e1 2.900 3.100 0.114 0.122 L 0.900 1.100 0.035 0.043 Electrical Characteristics( Tamb=25OC unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic= -10μA， Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN MAX UNIT -60 V Ic= -10mA， IB=0 -60 V V(BR)EBO IE=-10μA， IC=0 -5 V Collector cut-off current ICBO VCB=-50 V , IE=0 -0. 01 μA Emitter cut-off current IEBO VEB= -3V , -0. 01 μA hFE(1) VCE=-1V, IC= -0.1mA 75 hFE(2) VCE=-1V, IC= -1mA 100 hFE(3) VCE=-1V, IC=-10mA 100 hFE(4) VCE=-2V, IC= -150mA 100 hFE(5) VCE=-2V, IC=-500mA 50 VCE(sat)1 IC=-150 mA, IB=-15mA -0.4 V VCE(sat)2 IC=-500 mA, IB=- 50mA -1.6 V VBE(sat)1 IC=-150 mA, IB=-15mA -1.3 V VBE(sat)2 IC=-500 mA, IB= -50mA -2.6 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage fT Transition frequency Output Capacitance Cob Input Capacitance Cib IE=0 IC=0 VCE=-20V, IC= -50mA f=100MHz VCB=-10V, IE= 0 f=1MHz VEB=-2V, IC= 0 f=1MHz Delay time td Rise time tr IC=-150mA,IB1=-15mA Storage time tS IC=-150mA Fall time tf IB1= IB2= -15mA http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A VCC=-30V, 300 200 MHz 8 pF 30 pF 12 nS 30 nS 300 nS 65 nS Any changing of specification will not be informed individual Page 1 of 3 MMBT2907Q PNP Silicon General Purpose Transistor Elektronische Bauelemente TYPICAL CHARACTERISTICS 3.0 VCE = –1.0 V VCE = –10 V hFE , Normalized Current Gain 2.0 TJ = 125°C 25°C 1.0 – 55°C 0.7 0.5 0.3 0.2 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 I C, Collector Current (mA) Figure 3. DC Current Gain VCE , Collector–Emitter Voltage (V) –1.0 –0.8 IC = –1.0 mA –10 mA –100 mA –500 mA –0.6 –0.4 –0.2 0 –0.005 –0.01 –0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 I B, Base Current (mA) –3.0 –2.0 –5.0 –7.0 –10 –20 –30 –50 Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = –30 V IC/IB = 10 TJ = 25°C 30 20 td @ VBE(off) = 0 V tf 3.0 –5.0 –7.0 –10 2.0 V –20 –30 –50 –70 –100 IC, Collector Current Figure 5. Turn–On Time http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 100 70 50 30 t′s = ts – 1/8 tf 20 10 7.0 5.0 VCC = –30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 200 t, Time (ns) t, Time (ns) 300 200 –200 –300 –500 10 7.0 5.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 I C, Collector Current (mA) –200 –300 –500 Figure 6. Turn–Off Time Any changing of specification will not be informed individual Page 2 of 3 MMBT2907Q PNP Silicon General Purpose Transistor Elektronische Bauelemente TYPICAL SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 f = 1.0 kHz 8.0 NF, Noise Figure (dB) NF, Noise Figure (dB) 8.0 IC = –1.0 mA, Rs = 430 Ω –500 µA, Rs = 560 Ω –50 µA, Rs = 2.7 kΩ –100 µA, Rs = 1.6 kΩ 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 4.0 0 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, Frequency (kHz) R s, Source Resistance (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 50 k 400 Ceb 10 7.0 5.0 Ccb 3.0 2.0 –0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 f T, Current–Gain — Bandwidth Product (MHz) 20 C, Capacitance (pF) IC = –50 µA –100 µA –500 µA –1.0 mA 2.0 30 –20 –30 300 200 100 80 VCE = –20 V TJ = 25°C 60 40 30 20 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000 Reverse Voltage (VOLTS) I C, Collector Current (mA) Figure 9. Capacitances Figure 10. Current–Gain — Bandwidth Product +0.5 –1.0 TJ = 25°C 0 VBE(sat) @ IC/IB = 10 RqVC for VCE(sat) Coefficient (mV/ ° C) –0.8 VBE(on) @ VCE = –10 V –0.6 V, Voltage (V) 6.0 –0.4 –0.2 –0.5 –1.0 –1.5 RqVB for VBE –2.0 VCE(sat) @ IC/IB = 10 0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A –50 –100 –200 –500 –2.5 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 I C, Collector Current (mA) I C, Collector Current (mA) Figure 11. “On” Voltage Figure 12. Temperature Coefficients Any changing of specification will not be informed individual Page 3 of 3