MOTOROLA MRF184S Lateral n-channel broadband rf power mosfet Datasheet

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by MRF184/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
makes them ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
• Guaranteed Performance @ 945 MHz, 28 Volts
Output Power = 60 Watts
Power Gain = 11.5 dB
Efficiency = 53%
• Characterized with Series Equivalent Large–Signal
D
Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• Capable of Handling 30:1 VSWR @ 28 Vdc,
945 MHz
60 W, 1.0 GHz
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–01, STYLE 1
(MRF184)
G
CASE 360C–03, STYLE 1
(MRF184S)
S
MAXIMUM RATINGS
Symbol
Value
Unit
Drain–Source Voltage
Rating
VDSS
65
Vdc
Gate–Source Voltage
VGS
± 20
Vdc
Drain Current — Continuous
ID
7
Adc
Total Device Dissipation @ TC = 70°C
Derate above 70°C
PD
118
0.9
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
200
°C
Symbol
Max
Unit
RθJC
1.1
°C/W
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
–
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V)
IDSS
–
–
1
µAdc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0 V)
IGSS
–
–
1
µAdc
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 1 mAdc)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1997
MRF184 MRF184S
1
ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Gate Threshold Voltage
(VDS = 10 V, ID = 200 µA)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 100 mA)
VGS(Q)
3
4
5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
–
0.65
0.8
Vdc
Forward Transconductance
(VDS = 10 V, ID = 3 A)
gfs
2.2
2.6
–
s
Input Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Ciss
–
83
–
pF
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Coss
–
44
–
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Crss
–
4.3
–
pF
Common Source Power Gain
(VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA)
Gps
11.5
15
–
dB
Drain Efficiency
(VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA)
η
53
60
–
%
Load Mismatch
(VDD = 28 V, Pout = 60 W, IDQ = 100 mA, f = 945 MHz,
Load VSWR 5:1 at all Phase Angles)
ψ
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL CHARACTERISTICS
VGG
R1
C6
R2
No Degradation in Output Power
R4
C7
C8
C5
C11
C9
VDD
B1
L1
R3
C12
C2
C13
C10
DUT
RF
INPUT
C1
C4
TL2
TL3
TL1
TL4
RF
OUTPUT
C3
B1
C1
C2, C3, C6, C9
C4
C5, C12
C7, C10
C8, C11
C13
Short RF Bead Fair Rite–2743019447
18 pF Chip Capacitor
43 pF Chip Capacitor
100 pF Chip Capacitor
10 µF, 50 Vdc Electrolytic Capacitor
1000 pF Chip Capacitor
0.1 µF, 50 Vdc Chip Capacitor
250 µF, 50 Vdc Electrolytic Capacitor
L1
R1
R2
R3
R4
TL1–TL4
Ckt Board
5 Turns, 20 AWG, IDIA 0.126″
10 kΩ, 1/4 W Resistor
13 kΩ, 1/4 W Resistor
1.0 kΩ, 1/4 W Chip Resistor
4 x 39 Ω, 1/8 W Chip Resistor
Microstrip Line See Photomaster
1/32″ Glass Teflon, εr = 2.55
ARLON–GX–0300–55–22
Figure 1. MRF184 Test Circuit Schematic
MRF184 MRF184S
2
MOTOROLA RF DEVICE DATA
– 20
IMD, INTERMODULATION DISTORTION (dBc)
3rd ORDER
– 30
– 40
5th
– 50
7th
– 60
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
IDQ = 400 mA
–70
– 80
0
20
30
40
50
Pout, OUTPUT POWER (WATTS PEP)
10
60
70
–15
– 25
IDQ = 100 mA
– 35
250 mA
600 mA
– 45
– 55
0.1
Figure 2. Intermodulation Distortion versus
Output Power
Pout , OUTPUT POWER (WATTS)
Gpe , POWER GAIN (dB)
IDQ = 600 mA
400 mA
250 mA
14
100 mA
VDD = 28 Vdc
f = 945 MHz
16
Gpe
70
60
50
40
15
30
Pout
20
VDS = 28 Vdc
IDQ = 400 mA
f = 945 MHz
10
0
1
10
Pout, OUTPUT POWER (WATTS)
0.5
0
100
Figure 4. Power Gain versus Output Power
1.5
1
2
Pin, INPUT POWER (WATTS)
14
3
2.5
Figure 5. Output Power versus Input Power
100
80
P out , OUTPUT POWER (WATTS)
Pin = 4.0 W
90
P out , OUTPUT POWER (WATTS)
100
80
16
80
2.0 W
70
60
50
1.0 W
40
30
20
12
14
16
24
20
22
26
28
VDD, SUPPLY VOLTAGE (VOLTS)
18
30
Figure 6. Output Power versus Supply Voltage
MOTOROLA RF DEVICE DATA
70
60
50
TYPICAL DEVICE SHOWN
40
30
20
VDS = 28 Vdc
Pin = 2.0 W
f = 945 MHz
10
IDQ = 400 mA
f = 945 MHz
10
0
1
10
Pout, OUTPUT POWER (WATTS PEP)
Figure 3. Intermodulation Distortion versus
Output Power
18
12
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
400 mA
Gpe , POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
32
0
0
0.5
1.5
2
3.5
1
2.5
3
4
VGS, GATE–SOURCE VOLTAGE (VOLTS)
4.5
5
Figure 7. Output Power versus Gate Voltage
MRF184 MRF184S
3
TYPICAL CHARACTERISTICS
4
90
3.5
70
Pin = 2.5 W
I D, DRAIN CURRENT (mA)
P out , OUTPUT POWER (WATTS)
80
60
50
40
VDD = 28 Vdc
IDQ = 400 mA
SINGLE TONE
30
1.0 W
20
0.5 W
3
2.5
TYPICAL DEVICE SHOWN
2
1.5
1
VDS = 28 Vdc
0.5
10
0
800
0
820
840
860
880 900 920 940
f, FREQUENCY (MHz)
960
980 1000
0
Figure 8. Output Power versus Frequency
1
2
4
3
VGS, GATE VOLTAGE (VOLTS)
5
6
Figure 9. Drain Current versus Gate Voltage
6
140
5.5
100
Ciss
60
20
Crss
0
0
5
15
25
35
40
10
20
30
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
45
2
1.5
1
0.5
0
50
TJ = 150°C
TF = 70°C
0
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
15
25
10
20
VDS, DRAIN VOLTAGE (Vdc)
30
65
16
η
15.5
5
10
20
15
25
VDS, DRAIN VOLTAGE (Vdc)
30
Figure 12. DC Safe Operating Area
MRF184 MRF184S
4
35
60
55
15
Gpe
14.5
50
14
45
13.5
TJ = 175°C
TF = 70°C
0
35
Figure 11. DC Safe Operating Area
Gpe, POWER GAIN (dB)
I D, DRAIN CURRENT (AMPS)
Figure 10. Capacitance versus Voltage
5
13
880
VDD = 28 Vdc
IDQ = 400 mA
Pout = 60 W (CW)
900
40
VSWR
940
920
f, FREQUENCY (MHz)
960
35
980
2.5 η , EFFICIENCY (%)
VGS = 0 Vdc
f = 1.0 MHz
2.5
1.5
2.0
INPUT VSWR
40
Coss
5
4.5
4
3.5
3
1.0
80
I D, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
120
Figure 13. Performance in Broadband Circuit
MOTOROLA RF DEVICE DATA
60
P out , OUTPUT POWER (dBm)
50
40
FUNDAMENTAL
30
20
10
0
3rd ORDER
–10
VDS = 26 Vdc
ID = 2.1 A
f1 = 945 MHz
f2 = 945.1 MHz
– 20
– 30
– 40
10
15
25
20
30
Pin, INPUT POWER (dBm)
35
40
Figure 14. Class A Third Order Intercept Point
R1
C10
B1
C8
C7
C6
C5
C9
R4
C11
C12
R2
R3
C2
C13
L1
C1
C4
TL2
TL3
TL1
TL4
C3
XRF184
Figure 15. Component Parts Layout
MOTOROLA RF DEVICE DATA
MRF184 MRF184S
5
Zin
900
800
f = 1000 MHz
950
850
f = 1000 MHz
950
Z0 = 10 Ω
900
850
800
ZOL*
VDD = 28 Vdc, IDQ = 100 mA, Pout = 60 W
f
MHz
Zin
Ohms
ZOL*
Ohms
800
0.40 + j0.90
1.85 – j1.00
850
0.45 + j1.10
1.75 – j0.90
900
0.52 + j1.20
1.70 – j0.75
950
0.60 + j1.30
1.60 – j0.50
1000
0.70 + j1.38
1.57 – j0.40
Zin = Conjugate of source impedance.
Zout = Conjugate of the load impedance at given output
ZOL* = power, voltage, frequency and efficiency.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency and device stability.
Figure 16. Series Equivalent Input and Output Impedance
MRF184 MRF184S
6
MOTOROLA RF DEVICE DATA
Table 1. Common Source S–Parameters (VDS = 13.5 V)
ID = 2.0 A
f
MHz
S11
S21
∠φ
S12
S22
|S11|
0.916
179
|S21|
10.88
∠φ
20
80
|S12|
0.014
–22
∠φ
|S22|
0.843
175
∠φ
30
0.917
178
9.26
79
0.014
–25
0.847
174
40
0.918
177
8.10
78
0.015
–29
0.852
174
50
0.919
176
7.16
77
0.015
–33
0.853
174
100
0.919
175
4.57
75
0.015
–35
0.855
173
150
0.920
174
3.34
67
0.015
–38
0.865
173
200
0.921
173
2.60
62
0.014
–41
0.867
173
250
0.922
173
2.11
59
0.014
–45
0.877
173
300
0.928
172
1.77
55
0.014
–49
0.881
173
350
0.938
172
1.50
50
0.013
–55
0.887
173
400
0.941
171
1.28
47
0.013
–59
0.895
173
450
0.942
171
1.12
44
0.012
–62
0.896
173
500
0.943
171
1.00
41
0.012
–68
0.898
172
550
0.945
171
0.91
38
0.010
–75
0.899
172
600
0.947
171
0.80
35
0.010
–79
0.903
172
650
0.948
171
0.71
33
0.009
–85
0.905
172
700
0.955
170
0.65
30
0.008
–88
0.909
172
750
0.959
170
0.60
28
0.008
–95
0.919
172
800
0.962
169
0.55
25
0.007
–102
0.922
172
850
0.963
169
0.50
23
0.007
–111
0.923
171
900
0.964
169
0.45
21
0.007
–118
0.926
171
950
0.968
169
0.43
19
0.006
–125
0.929
171
1000
0.970
169
0.39
18
0.006
–129
0.933
171
1050
0.971
168
0.36
17
0.005
–134
0.935
171
1100
0.972
168
0.34
14
0.005
–142
0.936
170
1150
0.973
168
0.32
13
0.005
–149
0.938
170
1200
0.974
167
0.29
12
0.006
–156
0.940
169
1250
0.976
167
0.28
10
0.007
–162
0.943
169
1300
0.975
167
0.26
9
0.008
–173
0.945
168
1350
0.972
166
0.25
8
0.009
–178
0.946
167
1400
0.969
166
0.24
7
0.011
175
0.947
167
1450
0.965
165
0.22
6
0.012
172
0.948
167
1500
0.959
164
0.21
5
0.013
169
0.950
167
MOTOROLA RF DEVICE DATA
MRF184 MRF184S
7
Table 2. Common Source S–Parameters (VDS = 28 V)
ID = 2.0 A
f
MH
MHz
S11
S21
∠φ
S12
S22
|S11|
0.912
–170
|S21|
16.01
∠φ
20
84
|S12|
0.016
–12
∠φ
|S22|
0.746
178
∠φ
30
0.917
–173
13.73
82
0.015
–15
0.755
177
40
0.918
–174
12.02
80
0.014
–17
0.759
177
50
0.919
–176
10.62
78
0.013
–20
0.766
176
100
0.922
–178
6.76
71
0.012
–22
0.775
176
150
0.930
177
4.92
65
0.011
–25
0.791
176
200
0.931
176
3.82
60
0.010
–27
0.791
176
250
0.933
175
3.07
55
0.009
–29
0.793
176
300
0.941
174
2.53
51
0.009
–31
0.826
176
350
0.943
173
2.14
45
0.008
–35
0.834
176
400
0.945
172
1.83
41
0.008
–45
0.853
176
450
0.948
172
1.58
38
0.007
–52
0.858
176
500
0.950
172
1.39
35
0.007
–57
0.865
176
550
0.955
172
1.24
32
0.007
–61
0.876
176
600
0.960
172
1.10
29
0.006
–64
0.882
176
650
0.965
171
0.96
26
0.006
–68
0.888
175
700
0.967
171
0.89
24
0.006
–71
0.894
175
750
0.970
171
0.80
20
0.005
–73
0.904
175
800
0.973
170
0.73
18
0.005
–78
0.906
175
850
0.974
169
0.66
17
0.004
–83
0.908
174
900
0.975
169
0.61
13
0.004
–91
0.909
173
950
0.976
169
0.57
12
0.004
–94
0.915
173
1000
0.978
168
0.52
11
0.004
–96
0.916
173
1050
0.979
168
0.47
9
0.005
–102
0.919
172
1100
0.980
168
0.43
7
0.005
–115
0.924
172
1150
0.980
167
0.41
6
0.006
–119
0.931
171
1200
0.979
167
0.38
5
0.006
–125
0.934
170
1250
0.978
167
0.36
2
0.006
–139
0.935
170
1300
0.974
167
0.34
1
0.007
–148
0.936
170
1350
0.971
166
0.32
0
0.007
–156
0.937
169
1400
0.970
165
0.31
–1
0.007
–165
0.938
169
1450
0.969
165
0.30
–2
0.008
–171
0.939
169
1500
0.965
164
0.27
–3
0.008
–178
0.946
169
MRF184 MRF184S
8
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
G
1
–B–
3
Q 2 PL
2
K
0.25 (0.010)
D
E
H
T A
M
B
M
C
F
N
M
–T–
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
K
N
Q
INCHES
MIN
MAX
0.790
0.810
0.220
0.240
0.125
0.175
0.205
0.225
0.050
0.070
0.004
0.006
0.562 BSC
0.070
0.090
0.215
0.255
0.350
0.370
0.120
0.140
MILLIMETERS
MIN
MAX
20.07
20.57
5.59
6.09
3.18
4.45
5.21
5.71
1.27
1.77
0.11
0.15
14.27 BSC
1.78
2.29
5.47
6.47
8.89
9.39
3.05
3.55
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
–A–
CASE 360B–01
ISSUE O
(MRF184)
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
–B–
2
K
E
DIM
A
B
C
D
E
F
H
K
N
D
N
F
H
3
C
–T–
SEATING
PLANE
INCHES
MIN
MAX
0.370
0.390
0.220
0.240
0.105
0.155
0.205
0.225
0.035
0.045
0.004
0.006
0.067
0.057
0.085
0.115
0.350
0.370
MILLIMETERS
MIN
MAX
9.40
9.91
5.59
6.09
2.67
3.94
5.21
5.71
0.89
1.14
0.11
0.15
1.70
1.45
2.16
2.92
8.89
9.39
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
–A–
CASE 360C–03
ISSUE B
(MRF184S)
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MOTOROLA RF DEVICE DATA ◊
MRF184/D
MRF184 MRF184S
9